{"id":"https://openalex.org/W4400034680","doi":"https://doi.org/10.1109/icdcs59278.2024.10560700","title":"Performance Analysis of an Enhancement Mode Operated AlGaN/GaN MIS-HEMT Device with Ga<sub>2</sub>O<sub>3</sub> as a Back Barrier","display_name":"Performance Analysis of an Enhancement Mode Operated AlGaN/GaN MIS-HEMT Device with Ga<sub>2</sub>O<sub>3</sub> as a Back Barrier","publication_year":2024,"publication_date":"2024-04-23","ids":{"openalex":"https://openalex.org/W4400034680","doi":"https://doi.org/10.1109/icdcs59278.2024.10560700"},"language":"en","primary_location":{"id":"doi:10.1109/icdcs59278.2024.10560700","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/icdcs59278.2024.10560700","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 7th International Conference on Devices, Circuits and Systems (ICDCS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101659373","display_name":"Raj Kumar","orcid":"https://orcid.org/0009-0008-0653-3859"},"institutions":[{"id":"https://openalex.org/I876193797","display_name":"Vellore Institute of Technology University","ror":"https://ror.org/00qzypv28","country_code":"IN","type":"education","lineage":["https://openalex.org/I876193797"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"R. Saravana Kumar","raw_affiliation_strings":["school of Electronics Engineering Vellore Institute of Technology,Chennai,India","school of Electronics Engineering Vellore Institute of Technology, Chennai, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"school of Electronics Engineering Vellore Institute of Technology,Chennai,India","institution_ids":["https://openalex.org/I876193797"]},{"raw_affiliation_string":"school of Electronics Engineering Vellore Institute of Technology, Chennai, India","institution_ids":["https://openalex.org/I876193797"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5076005564","display_name":"L. Lino","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"L. Lino","raw_affiliation_strings":["Bannari Amman Institute of Technology,Electronics and Communication Engineering,Sathyamangalam,India","Electronics and Communication Engineering, Bannari Amman Institute of Technology, Sathyamangalam, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Bannari Amman Institute of Technology,Electronics and Communication Engineering,Sathyamangalam,India","institution_ids":[]},{"raw_affiliation_string":"Electronics and Communication Engineering, Bannari Amman Institute of Technology, Sathyamangalam, India","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026330728","display_name":"K. Yogeshvaran","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"K. Yogeshvaran","raw_affiliation_strings":["Bannari Amman Institute of Technology,Electronics and Communication Engineering,Sathyamangalam,India","Electronics and Communication Engineering, Bannari Amman Institute of Technology, Sathyamangalam, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Bannari Amman Institute of Technology,Electronics and Communication Engineering,Sathyamangalam,India","institution_ids":[]},{"raw_affiliation_string":"Electronics and Communication Engineering, Bannari Amman Institute of Technology, Sathyamangalam, India","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5017505602","display_name":"M. Leeban Moses","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"M. Leeban Moses","raw_affiliation_strings":["Bannari Amman Institute of Technology,Electronics and Communication Engineering,Sathyamangalam,India","Electronics and Communication Engineering, Bannari Amman Institute of Technology, Sathyamangalam, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Bannari Amman Institute of Technology,Electronics and Communication Engineering,Sathyamangalam,India","institution_ids":[]},{"raw_affiliation_string":"Electronics and Communication Engineering, Bannari Amman Institute of Technology, Sathyamangalam, India","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.2065,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.69425287,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":97},"biblio":{"volume":"32","issue":null,"first_page":"248","last_page":"252"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9911999702453613,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.8639299869537354},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.7180579304695129},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6803598999977112},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.6691741943359375},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.6338868737220764},{"id":"https://openalex.org/keywords/mode","display_name":"Mode (computer interface)","score":0.5576067566871643},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2238113284111023},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.16922935843467712},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.13160255551338196},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.10622498393058777},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.10156574845314026},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.10153558850288391},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.06946441531181335}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.8639299869537354},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7180579304695129},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6803598999977112},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.6691741943359375},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.6338868737220764},{"id":"https://openalex.org/C48677424","wikidata":"https://www.wikidata.org/wiki/Q6888088","display_name":"Mode (computer interface)","level":2,"score":0.5576067566871643},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2238113284111023},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.16922935843467712},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.13160255551338196},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.10622498393058777},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.10156574845314026},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.10153558850288391},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.06946441531181335},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icdcs59278.2024.10560700","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/icdcs59278.2024.10560700","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 7th International Conference on Devices, Circuits and Systems (ICDCS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W2152930221","https://openalex.org/W2585964977","https://openalex.org/W2751833618","https://openalex.org/W3017292134","https://openalex.org/W3026596720","https://openalex.org/W3098229796","https://openalex.org/W3107332379","https://openalex.org/W3209296402","https://openalex.org/W4200462435","https://openalex.org/W4280512169","https://openalex.org/W4291448151","https://openalex.org/W4302293653","https://openalex.org/W4386649841"],"related_works":["https://openalex.org/W2472160638","https://openalex.org/W3209950509","https://openalex.org/W4377089489","https://openalex.org/W4388207625","https://openalex.org/W1975307200","https://openalex.org/W3180045410","https://openalex.org/W3088454288","https://openalex.org/W4313611767","https://openalex.org/W4385217635","https://openalex.org/W2466508933"],"abstract_inverted_index":{"Rapid":[0],"technological":[1],"advancements":[2],"over":[3],"the":[4,12,52,73,113,118,126,175,181],"past":[5],"decade":[6],"have":[7],"propelled":[8],"gallium":[9],"oxide":[10],"to":[11,20,60],"forefront":[13],"of":[14,68,125,180],"ultra-wide":[15],"bandgap":[16,47],"semiconductor":[17,53],"technologies,":[18],"owing":[19],"its":[21],"favorable":[22],"intrinsic":[23],"material":[24],"properties.":[25],"In":[26,93],"this":[27,94],"work,":[28,95],"we":[29,96],"propose":[30],"an":[31],"enhancement":[32],"mode-operated":[33],"recessed":[34,170],"gate":[35,171],"AlGaN":[36,111],"MIS-HEMT":[37,99,108],"device":[38,74,100],"structure":[39,109,172],"with":[40,105,110],"Ga2O3as":[41,160],"a":[42,69,76,98,102,106,161,169],"back":[43,114,162],"barrier.":[44],"Ga2O3\u2019s":[45],"wide":[46],"reduces":[48],"trapping":[49],"states":[50],"near":[51],"interface,":[54],"improving":[55],"carrier":[56,81],"transport":[57],"and":[58,64,83,116,120,167,177,188],"leading":[59],"increased":[61],"saturation":[62],"current":[63],"transconductance.":[65],"The":[66,154],"use":[67],"\u03b2-Ga2O3back-barrier":[70],"layer":[71,165],"in":[72,88],"creates":[75],"potential":[77],"well":[78],"that":[79,133,158],"enhances":[80],"concentration":[82],"improves":[84],"electron":[85],"mobility,":[86],"resulting":[87],"higher":[89],"sheet":[90],"charge":[91],"density.":[92],"compared":[97],"featuring":[101],"Ga2O3back":[103],"barrier":[104,115],"conventional":[107],"as":[112],"analyze":[117],"DC":[119,176],"RF":[121,178],"characteristics.":[122],"Numerical":[123],"results":[124,155],"proposed":[127],"Al0.15Ga0.85N/GaN/Ga2O3obtained":[128],"from":[129],"TCAD":[130],"simulations":[131],"show":[132],"an$\\mathrm{I}_{\\text{ds}}$of":[134],"0.84":[135],"A/mm,$V_{B":[136],"D}$of":[137],"1012":[138],"V,":[139],"RONof":[140],"6.45":[141],"ohm.mm,$\\mathrm{f}_{\\mathrm{t}}$of":[142],"34":[143],"GHz,$\\mathrm{f}_{\\max}$of":[144],"84":[145],"GHz,$\\mathrm{g}_{\\mathrm{m}}$of":[146],"0.25":[147],"S/mm":[148],"and$\\mathrm{V}_{\\text{TH}}$of":[149],"3.02":[150],"V":[151],"is":[152],"obtained.":[153],"obtained":[156],"indicate":[157],"incorporating":[159],"barrier,":[163],"optimizing":[164],"thickness,":[166],"employing":[168],"collectively":[173],"improve":[174],"characteristics":[179],"device,":[182],"rendering":[183],"it":[184],"suitable":[185],"for":[186],"high-frequency":[187],"high-power":[189],"applications.":[190]},"counts_by_year":[{"year":2026,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}