{"id":"https://openalex.org/W4386322379","doi":"https://doi.org/10.1109/icce-taiwan58799.2023.10227012","title":"Comparison of Conventional I-Type and T-Type FinFET","display_name":"Comparison of Conventional I-Type and T-Type FinFET","publication_year":2023,"publication_date":"2023-07-17","ids":{"openalex":"https://openalex.org/W4386322379","doi":"https://doi.org/10.1109/icce-taiwan58799.2023.10227012"},"language":"en","primary_location":{"id":"doi:10.1109/icce-taiwan58799.2023.10227012","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/icce-taiwan58799.2023.10227012","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101239613","display_name":"Ying-Ru Xiong","orcid":null},"institutions":[{"id":"https://openalex.org/I125934054","display_name":"National United University","ror":"https://ror.org/04twccc71","country_code":"TW","type":"education","lineage":["https://openalex.org/I125934054"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"Ying-Ru Xiong","raw_affiliation_strings":["National United University,Department of Electronic Engineering,Miao-Li,Taiwan,36063"],"affiliations":[{"raw_affiliation_string":"National United University,Department of Electronic Engineering,Miao-Li,Taiwan,36063","institution_ids":["https://openalex.org/I125934054"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5102001311","display_name":"Yu-Hsien Lin","orcid":"https://orcid.org/0000-0001-7570-7949"},"institutions":[{"id":"https://openalex.org/I125934054","display_name":"National United University","ror":"https://ror.org/04twccc71","country_code":"TW","type":"education","lineage":["https://openalex.org/I125934054"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Yu-Hsien Lin","raw_affiliation_strings":["National United University,Department of Electronic Engineering,Miao-Li,Taiwan,36063"],"affiliations":[{"raw_affiliation_string":"National United University,Department of Electronic Engineering,Miao-Li,Taiwan,36063","institution_ids":["https://openalex.org/I125934054"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5101239613"],"corresponding_institution_ids":["https://openalex.org/I125934054"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.09203067,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"725","last_page":"726"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/fin","display_name":"Fin","score":0.603786289691925},{"id":"https://openalex.org/keywords/type","display_name":"Type (biology)","score":0.5860342979431152},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5318377017974854},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5283689498901367},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.4941141903400421},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4326225519180298},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.41267460584640503},{"id":"https://openalex.org/keywords/field","display_name":"Field (mathematics)","score":0.41235360503196716},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.38499999046325684},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3789161741733551},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3692839741706848},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2091858685016632},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.14805984497070312},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.12324896454811096},{"id":"https://openalex.org/keywords/geology","display_name":"Geology","score":0.047375500202178955}],"concepts":[{"id":"https://openalex.org/C91721477","wikidata":"https://www.wikidata.org/wiki/Q778612","display_name":"Fin","level":2,"score":0.603786289691925},{"id":"https://openalex.org/C2777299769","wikidata":"https://www.wikidata.org/wiki/Q3707858","display_name":"Type (biology)","level":2,"score":0.5860342979431152},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5318377017974854},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5283689498901367},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.4941141903400421},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4326225519180298},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.41267460584640503},{"id":"https://openalex.org/C9652623","wikidata":"https://www.wikidata.org/wiki/Q190109","display_name":"Field (mathematics)","level":2,"score":0.41235360503196716},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.38499999046325684},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3789161741733551},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3692839741706848},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2091858685016632},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.14805984497070312},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.12324896454811096},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.047375500202178955},{"id":"https://openalex.org/C202444582","wikidata":"https://www.wikidata.org/wiki/Q837863","display_name":"Pure mathematics","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icce-taiwan58799.2023.10227012","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/icce-taiwan58799.2023.10227012","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8100000023841858}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W2141449756","https://openalex.org/W2177622239","https://openalex.org/W2540000265","https://openalex.org/W2810747979"],"related_works":["https://openalex.org/W2092177242","https://openalex.org/W4295791167","https://openalex.org/W2000473227","https://openalex.org/W2019513361","https://openalex.org/W1992124208","https://openalex.org/W2072424359","https://openalex.org/W2027914081","https://openalex.org/W2061674058","https://openalex.org/W2750055590","https://openalex.org/W1990516236"],"abstract_inverted_index":{"A":[0],"performance":[1],"comparison":[2],"was":[3,29],"conducted":[4],"between":[5],"T-type":[6,26],"FinFETs":[7,13],"(T-shaped":[8],"Fin":[9,15],"Field-effect-transistors)":[10,16],"and":[11,37],"I-type":[12,44],"(I-shaped":[14],"under":[17],"identical":[18],"conditions.":[19],"After":[20],"optimizing":[21],"the":[22,25,43,47],"structure":[23],"of":[24],"FinFET,":[27],"it":[28],"found":[30],"to":[31],"have":[32],"a":[33],"higher":[34],"drive":[35],"current":[36],"better":[38],"short":[39],"channel":[40],"effect":[41],"than":[42],"FinFET":[45],"in":[46],"same":[48],"scenario.":[49]},"counts_by_year":[],"updated_date":"2025-12-21T01:58:51.020947","created_date":"2025-10-10T00:00:00"}