{"id":"https://openalex.org/W2549353381","doi":"https://doi.org/10.1109/iccd.2016.7753302","title":"Error behaviors testing with temperature and magnetism dependency for MRAM","display_name":"Error behaviors testing with temperature and magnetism dependency for MRAM","publication_year":2016,"publication_date":"2016-10-01","ids":{"openalex":"https://openalex.org/W2549353381","doi":"https://doi.org/10.1109/iccd.2016.7753302","mag":"2549353381"},"language":"en","primary_location":{"id":"doi:10.1109/iccd.2016.7753302","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iccd.2016.7753302","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 IEEE 34th International Conference on Computer Design (ICCD)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5112360241","display_name":"Xin Shi","orcid":null},"institutions":[{"id":"https://openalex.org/I4210138186","display_name":"Wuhan National Laboratory for Optoelectronics","ror":"https://ror.org/03c9ncn37","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210138186"]},{"id":"https://openalex.org/I47720641","display_name":"Huazhong University of Science and Technology","ror":"https://ror.org/00p991c53","country_code":"CN","type":"education","lineage":["https://openalex.org/I47720641"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Xin Shi","raw_affiliation_strings":["Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, China"],"affiliations":[{"raw_affiliation_string":"Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, China","institution_ids":["https://openalex.org/I4210138186","https://openalex.org/I47720641"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062125860","display_name":"Fei Wu","orcid":"https://orcid.org/0000-0001-9746-4714"},"institutions":[{"id":"https://openalex.org/I4210138186","display_name":"Wuhan National Laboratory for Optoelectronics","ror":"https://ror.org/03c9ncn37","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210138186"]},{"id":"https://openalex.org/I47720641","display_name":"Huazhong University of Science and Technology","ror":"https://ror.org/00p991c53","country_code":"CN","type":"education","lineage":["https://openalex.org/I47720641"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Fei Wu","raw_affiliation_strings":["Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, China"],"affiliations":[{"raw_affiliation_string":"Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, China","institution_ids":["https://openalex.org/I4210138186","https://openalex.org/I47720641"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103720956","display_name":"Xidong Guan","orcid":null},"institutions":[{"id":"https://openalex.org/I47720641","display_name":"Huazhong University of Science and Technology","ror":"https://ror.org/00p991c53","country_code":"CN","type":"education","lineage":["https://openalex.org/I47720641"]},{"id":"https://openalex.org/I4210138186","display_name":"Wuhan National Laboratory for Optoelectronics","ror":"https://ror.org/03c9ncn37","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210138186"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xidong Guan","raw_affiliation_strings":["Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, China"],"affiliations":[{"raw_affiliation_string":"Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, China","institution_ids":["https://openalex.org/I4210138186","https://openalex.org/I47720641"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100329127","display_name":"Changsheng Xie","orcid":"https://orcid.org/0000-0003-1271-0571"},"institutions":[{"id":"https://openalex.org/I4210138186","display_name":"Wuhan National Laboratory for Optoelectronics","ror":"https://ror.org/03c9ncn37","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210138186"]},{"id":"https://openalex.org/I47720641","display_name":"Huazhong University of Science and Technology","ror":"https://ror.org/00p991c53","country_code":"CN","type":"education","lineage":["https://openalex.org/I47720641"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Changsheng Xie","raw_affiliation_strings":["Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, China"],"affiliations":[{"raw_affiliation_string":"Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, China","institution_ids":["https://openalex.org/I4210138186","https://openalex.org/I47720641"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5112360241"],"corresponding_institution_ids":["https://openalex.org/I4210138186","https://openalex.org/I47720641"],"apc_list":null,"apc_paid":null,"fwci":0.2895,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.64733663,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"46","issue":null,"first_page":"356","last_page":"359"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11181","display_name":"Advanced Data Storage Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/1705","display_name":"Computer Networks and Communications"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11181","display_name":"Advanced Data Storage Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/1705","display_name":"Computer Networks and Communications"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9972000122070312,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/magnetoresistive-random-access-memory","display_name":"Magnetoresistive random-access memory","score":0.9632052183151245},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.5762869715690613},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5095356106758118},{"id":"https://openalex.org/keywords/magnetic-storage","display_name":"Magnetic storage","score":0.4271838963031769},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3351204991340637},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.31790977716445923},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.1301499605178833},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.11241194605827332}],"concepts":[{"id":"https://openalex.org/C46891859","wikidata":"https://www.wikidata.org/wiki/Q1061546","display_name":"Magnetoresistive random-access memory","level":3,"score":0.9632052183151245},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.5762869715690613},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5095356106758118},{"id":"https://openalex.org/C2778511666","wikidata":"https://www.wikidata.org/wiki/Q1364527","display_name":"Magnetic storage","level":2,"score":0.4271838963031769},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3351204991340637},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.31790977716445923},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.1301499605178833},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.11241194605827332},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iccd.2016.7753302","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iccd.2016.7753302","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 IEEE 34th International Conference on Computer Design (ICCD)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W2012923077","https://openalex.org/W2034400492","https://openalex.org/W2059927838","https://openalex.org/W2074138591","https://openalex.org/W2118870365","https://openalex.org/W2131964951","https://openalex.org/W2155370145","https://openalex.org/W2156728623","https://openalex.org/W2167229729","https://openalex.org/W2206157732"],"related_works":["https://openalex.org/W1964763691","https://openalex.org/W2163958441","https://openalex.org/W2002108625","https://openalex.org/W2583746550","https://openalex.org/W2015163736","https://openalex.org/W2533945318","https://openalex.org/W2148274083","https://openalex.org/W275527406","https://openalex.org/W4235980920","https://openalex.org/W2026886288"],"abstract_inverted_index":{"Magnetoresistive":[0],"random":[1],"access":[2],"memory":[3,12,148],"(MRAM)":[4],"has":[5],"the":[6,18,36,42,91,108,142],"potential":[7],"to":[8,24,57],"become":[9],"a":[10,31],"universal":[11],"for":[13,90,140],"future":[14],"storage":[15],"system.":[16],"However,":[17],"stability":[19],"of":[20,45,61,145],"MRAM":[21,47,62,76,88,147],"is":[22,95,105,112,119,133],"sensitive":[23],"temperature":[25,37,104],"and":[26,38,81,107],"magnetic":[27,39,82,126,130],"field.":[28],"To":[29],"obtain":[30],"strong":[32],"understanding":[33],"about":[34],"how":[35],"field":[40,131],"impact":[41],"reliability":[43],"characteristics":[44],"real":[46,75],"devices,":[48],"Everspin":[49],"MR4A08BYS35,":[50],"we":[51,70,93],"present":[52],"an":[53],"error":[54,68,110,118,124],"behavior":[55],"model":[56],"categorize":[58],"two":[59],"types":[60],"errors.":[63],"Based":[64],"on":[65,74],"our":[66],"proposed":[67],"model,":[69],"conduct":[71],"extensive":[72],"experiments":[73],"devices":[77],"in":[78,125],"different":[79],"temperatures":[80],"fields.":[83],"Our":[84],"results":[85,136],"show":[86],"that":[87],"lifetime":[89],"chips":[92],"tested":[94],"demonstrated":[96],"infinite":[97],"under":[98],"normal":[99],"operation":[100],"environment.":[101,127],"The":[102,128],"critical":[103,129],"75\u00b0C":[106],"dominant":[109],"type":[111],"read":[113,123],"error.":[114],"In":[115],"contrast,":[116],"write":[117],"more":[120],"seriously":[121],"than":[122],"intensity":[132],"140Gauss.":[134],"These":[135],"can":[137],"be":[138],"used":[139],"measuring":[141],"fabrication":[143],"quality":[144],"individual":[146],"chips.":[149]},"counts_by_year":[{"year":2020,"cited_by_count":1},{"year":2017,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}