{"id":"https://openalex.org/W2079620260","doi":"https://doi.org/10.1109/iccd.2014.6974708","title":"Low write-energy STT-MRAMs using FinFET-based access transistors","display_name":"Low write-energy STT-MRAMs using FinFET-based access transistors","publication_year":2014,"publication_date":"2014-10-01","ids":{"openalex":"https://openalex.org/W2079620260","doi":"https://doi.org/10.1109/iccd.2014.6974708","mag":"2079620260"},"language":"en","primary_location":{"id":"doi:10.1109/iccd.2014.6974708","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iccd.2014.6974708","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE 32nd International Conference on Computer Design (ICCD)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5078801359","display_name":"Alireza Shafaei","orcid":null},"institutions":[{"id":"https://openalex.org/I1174212","display_name":"University of Southern California","ror":"https://ror.org/03taz7m60","country_code":"US","type":"education","lineage":["https://openalex.org/I1174212"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Alireza Shafaei","raw_affiliation_strings":["Department of Electrical Engineering, University of Southern California, Los Angeles, CA","Dept. of Electrical Engineering, University of Southern California, Los Angeles, 90089, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, University of Southern California, Los Angeles, CA","institution_ids":["https://openalex.org/I1174212"]},{"raw_affiliation_string":"Dept. of Electrical Engineering, University of Southern California, Los Angeles, 90089, USA","institution_ids":["https://openalex.org/I1174212"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100651390","display_name":"Yanzhi Wang","orcid":"https://orcid.org/0009-0000-0231-0609"},"institutions":[{"id":"https://openalex.org/I1174212","display_name":"University of Southern California","ror":"https://ror.org/03taz7m60","country_code":"US","type":"education","lineage":["https://openalex.org/I1174212"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yanzhi Wang","raw_affiliation_strings":["Department of Electrical Engineering, University of Southern California, Los Angeles, CA","Dept. of Electrical Engineering, University of Southern California, Los Angeles, 90089, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, University of Southern California, Los Angeles, CA","institution_ids":["https://openalex.org/I1174212"]},{"raw_affiliation_string":"Dept. of Electrical Engineering, University of Southern California, Los Angeles, 90089, USA","institution_ids":["https://openalex.org/I1174212"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5044650311","display_name":"Massoud Pedram","orcid":"https://orcid.org/0000-0002-2677-7307"},"institutions":[{"id":"https://openalex.org/I1174212","display_name":"University of Southern California","ror":"https://ror.org/03taz7m60","country_code":"US","type":"education","lineage":["https://openalex.org/I1174212"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Massoud Pedram","raw_affiliation_strings":["Department of Electrical Engineering, University of Southern California, Los Angeles, CA","Dept. of Electrical Engineering, University of Southern California, Los Angeles, 90089, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, University of Southern California, Los Angeles, CA","institution_ids":["https://openalex.org/I1174212"]},{"raw_affiliation_string":"Dept. of Electrical Engineering, University of Southern California, Los Angeles, 90089, USA","institution_ids":["https://openalex.org/I1174212"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I1174212"],"apc_list":null,"apc_paid":null,"fwci":0.6539,"has_fulltext":false,"cited_by_count":19,"citation_normalized_percentile":{"value":0.71285056,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"374","last_page":"379"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9986000061035156,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/magnetoresistive-random-access-memory","display_name":"Magnetoresistive random-access memory","score":0.8954455852508545},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7106565237045288},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6437619924545288},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5210503935813904},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4899813234806061},{"id":"https://openalex.org/keywords/energy","display_name":"Energy (signal processing)","score":0.4273887872695923},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3413729667663574},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.2615095376968384},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.20899692177772522},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1953422725200653},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.18780755996704102},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.18774431943893433}],"concepts":[{"id":"https://openalex.org/C46891859","wikidata":"https://www.wikidata.org/wiki/Q1061546","display_name":"Magnetoresistive random-access memory","level":3,"score":0.8954455852508545},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7106565237045288},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6437619924545288},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5210503935813904},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4899813234806061},{"id":"https://openalex.org/C186370098","wikidata":"https://www.wikidata.org/wiki/Q442787","display_name":"Energy (signal processing)","level":2,"score":0.4273887872695923},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3413729667663574},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.2615095376968384},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.20899692177772522},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1953422725200653},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.18780755996704102},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.18774431943893433},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iccd.2014.6974708","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iccd.2014.6974708","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE 32nd International Conference on Computer Design (ICCD)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.9100000262260437,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320306076","display_name":"National Science Foundation","ror":"https://ror.org/021nxhr62"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":24,"referenced_works":["https://openalex.org/W1489111899","https://openalex.org/W1942376762","https://openalex.org/W2004113442","https://openalex.org/W2010202670","https://openalex.org/W2017525960","https://openalex.org/W2034097727","https://openalex.org/W2035607161","https://openalex.org/W2069345435","https://openalex.org/W2084007230","https://openalex.org/W2096562756","https://openalex.org/W2101568739","https://openalex.org/W2108453702","https://openalex.org/W2111050400","https://openalex.org/W2135405837","https://openalex.org/W2148831941","https://openalex.org/W2150952982","https://openalex.org/W2156728623","https://openalex.org/W2171779727","https://openalex.org/W3144097696","https://openalex.org/W3144904247","https://openalex.org/W4240163901","https://openalex.org/W4256248576","https://openalex.org/W6640547819","https://openalex.org/W6676374691"],"related_works":["https://openalex.org/W3146164987","https://openalex.org/W2141626281","https://openalex.org/W2086829516","https://openalex.org/W1641143370","https://openalex.org/W2128922810","https://openalex.org/W2472395098","https://openalex.org/W1908441109","https://openalex.org/W2047360450","https://openalex.org/W1579280934","https://openalex.org/W2109445684"],"abstract_inverted_index":{"Spin-Transfer":[0],"Torque":[1],"Magnetic":[2],"RAM":[3],"(STT-MRAM)":[4],"technology":[5],"requires":[6],"a":[7,60],"high":[8],"current":[9,38],"in":[10,25,86,150],"order":[11,87],"to":[12,21,88,108],"write":[13,123],"data":[14],"into":[15],"memory":[16,152],"cells,":[17],"which":[18,58],"gives":[19],"rise":[20],"large":[22],"access":[23,62,78],"transistors":[24],"conventional":[26,168],"MOS-accessed":[27,103,117,169],"cells.":[28],"On":[29],"the":[30,51,66,69,76,81,90,109,113,116,131,145,151,155,167],"other":[31],"hand,":[32],"FinFET":[33,61,77],"devices":[34],"offer":[35],"higher":[36,162],"ON":[37],"and":[39,80,97,161],"denser":[40,159],"layout":[41],"compared":[42,165],"with":[43,166],"planar":[44],"CMOS":[45],"transistors.":[46],"This":[47],"paper":[48],"thus":[49],"proposes":[50],"design":[52,133],"of":[53,68,75,115,147],"an":[54],"energy-efficient":[55],"STT-MRAM":[56,91,118,157],"cell":[57,92],"utilizes":[59],"transistor.":[63],"To":[64],"assess":[65],"performance":[67],"new":[70],"cell,":[71],"optimal":[72],"layout-related":[73],"parameters":[74],"transistor":[79],"MTJ":[82],"are":[83,105],"analytically":[84],"derived":[85],"minimize":[89],"area.":[93,153],"Afterwards,":[94],"detailed":[95],"cell-":[96],"architecture-level":[98],"comparisons":[99],"between":[100],"FinFET-":[101],"vs.":[102],"STT-MRAMs":[104],"performed.":[106],"According":[107],"comparison":[110],"results,":[111],"while":[112],"area":[114,160],"increases":[119],"significantly":[120],"under":[121,137],"3ns":[122],"pulse":[124],"width":[125],"(\u03c4":[126],"<sub":[127,139],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[128,140],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">w</sub>":[129,141],"),":[130],"FinFET-based":[132],"can":[134],"effectively":[135],"function":[136],"\u03c4":[138],"=":[142],"2ns,":[143],"at":[144],"cost":[146],"slight":[148],"increase":[149],"Hence,":[154],"FinFET-accessed":[156],"offers":[158],"energy":[163],"efficiency":[164],"counterpart.":[170]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":3},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":3},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1}],"updated_date":"2026-06-26T08:34:08.712188","created_date":"2025-10-10T00:00:00"}