{"id":"https://openalex.org/W2092307462","doi":"https://doi.org/10.1109/iccd.2014.6974705","title":"Boolean circuit design using emerging tunneling devices","display_name":"Boolean circuit design using emerging tunneling devices","publication_year":2014,"publication_date":"2014-10-01","ids":{"openalex":"https://openalex.org/W2092307462","doi":"https://doi.org/10.1109/iccd.2014.6974705","mag":"2092307462"},"language":"en","primary_location":{"id":"doi:10.1109/iccd.2014.6974705","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iccd.2014.6974705","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE 32nd International Conference on Computer Design (ICCD)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5058897428","display_name":"Behnam Sedighi","orcid":null},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Behnam Sedighi","raw_affiliation_strings":["Dept. of Electrical Engineering, University of Notre Dame, IN, USA","Dept. of Electrical Engineering, University of Notre Dame, IN 46556 USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electrical Engineering, University of Notre Dame, IN, USA","institution_ids":["https://openalex.org/I107639228"]},{"raw_affiliation_string":"Dept. of Electrical Engineering, University of Notre Dame, IN 46556 USA","institution_ids":["https://openalex.org/I107639228"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5013446507","display_name":"Joseph Nahas","orcid":null},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Joseph J. Nahas","raw_affiliation_strings":["Dept. of Electrical Engineering, University of Notre Dame, IN, USA","Dept. of Electrical Engineering, University of Notre Dame, IN 46556 USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electrical Engineering, University of Notre Dame, IN, USA","institution_ids":["https://openalex.org/I107639228"]},{"raw_affiliation_string":"Dept. of Electrical Engineering, University of Notre Dame, IN 46556 USA","institution_ids":["https://openalex.org/I107639228"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003032564","display_name":"Michael Niemier","orcid":"https://orcid.org/0000-0001-7776-4306"},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Michael Niemier","raw_affiliation_strings":["Dept. of Electrical Engineering, University of Notre Dame, IN, USA","Department of Computer Science and Engineering, University of Notre Dame, IN, 46556, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electrical Engineering, University of Notre Dame, IN, USA","institution_ids":["https://openalex.org/I107639228"]},{"raw_affiliation_string":"Department of Computer Science and Engineering, University of Notre Dame, IN, 46556, USA","institution_ids":["https://openalex.org/I107639228"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100600905","display_name":"Xiaobo Sharon Hu","orcid":"https://orcid.org/0000-0002-6636-9738"},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Xiaobo Sharon Hu","raw_affiliation_strings":["Dept. of Electrical Engineering, University of Notre Dame, IN, USA","Department of Computer Science and Engineering, University of Notre Dame, IN, 46556, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electrical Engineering, University of Notre Dame, IN, USA","institution_ids":["https://openalex.org/I107639228"]},{"raw_affiliation_string":"Department of Computer Science and Engineering, University of Notre Dame, IN, 46556, USA","institution_ids":["https://openalex.org/I107639228"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I107639228"],"apc_list":null,"apc_paid":null,"fwci":1.4905,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.85135071,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"335","issue":null,"first_page":"355","last_page":"360"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10382","display_name":"Quantum and electron transport phenomena","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nand-gate","display_name":"NAND gate","score":0.7614575624465942},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7163742184638977},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6667258739471436},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.6314358711242676},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.5765303373336792},{"id":"https://openalex.org/keywords/quantum-tunnelling","display_name":"Quantum tunnelling","score":0.564630925655365},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5472334623336792},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5249148011207581},{"id":"https://openalex.org/keywords/digital-electronics","display_name":"Digital electronics","score":0.4741729497909546},{"id":"https://openalex.org/keywords/pass-transistor-logic","display_name":"Pass transistor logic","score":0.4472337067127228},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.438925176858902},{"id":"https://openalex.org/keywords/adiabatic-circuit","display_name":"Adiabatic circuit","score":0.4166005253791809},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.30966493487358093},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.23773404955863953},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.23162269592285156},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.1885417401790619}],"concepts":[{"id":"https://openalex.org/C124296912","wikidata":"https://www.wikidata.org/wiki/Q575178","display_name":"NAND gate","level":3,"score":0.7614575624465942},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7163742184638977},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6667258739471436},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.6314358711242676},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.5765303373336792},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.564630925655365},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5472334623336792},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5249148011207581},{"id":"https://openalex.org/C81843906","wikidata":"https://www.wikidata.org/wiki/Q173156","display_name":"Digital electronics","level":3,"score":0.4741729497909546},{"id":"https://openalex.org/C198521697","wikidata":"https://www.wikidata.org/wiki/Q7142438","display_name":"Pass transistor logic","level":4,"score":0.4472337067127228},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.438925176858902},{"id":"https://openalex.org/C87606752","wikidata":"https://www.wikidata.org/wiki/Q4682637","display_name":"Adiabatic circuit","level":5,"score":0.4166005253791809},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.30966493487358093},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.23773404955863953},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.23162269592285156},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.1885417401790619}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iccd.2014.6974705","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iccd.2014.6974705","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE 32nd International Conference on Computer Design (ICCD)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8999999761581421}],"awards":[],"funders":[{"id":"https://openalex.org/F4320332180","display_name":"Defense Advanced Research Projects Agency","ror":"https://ror.org/02caytj08"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":17,"referenced_works":["https://openalex.org/W1965926647","https://openalex.org/W2014409046","https://openalex.org/W2033006712","https://openalex.org/W2034131035","https://openalex.org/W2039211361","https://openalex.org/W2051797285","https://openalex.org/W2063745933","https://openalex.org/W2095049269","https://openalex.org/W2096434389","https://openalex.org/W2100235537","https://openalex.org/W2128361738","https://openalex.org/W2138040286","https://openalex.org/W2157024459","https://openalex.org/W2157888022","https://openalex.org/W2963771263","https://openalex.org/W3006517346","https://openalex.org/W6675270818"],"related_works":["https://openalex.org/W2580743037","https://openalex.org/W4226211266","https://openalex.org/W2965791759","https://openalex.org/W2791832526","https://openalex.org/W3165307257","https://openalex.org/W2418067545","https://openalex.org/W4361799621","https://openalex.org/W2988242922","https://openalex.org/W4210368030","https://openalex.org/W1574518580"],"abstract_inverted_index":{"Novel":[0],"device":[1],"technologies":[2],"are":[3,133],"exceedingly":[4],"under":[5],"investigation":[6],"for":[7,21,99,137,160],"the":[8,19,53,65,72,109],"sub-10-nm":[9],"era.":[10],"Some":[11],"tunneling":[12,34],"devices":[13,35],"employing":[14],"2-D":[15],"materials":[16],"have":[17,144],"shown":[18],"potential":[20],"low-voltage":[22],"operation,":[23],"promising":[24],"energy":[25,152],"efficient":[26],"digital":[27],"circuits":[28,100,162],"and":[29,39,79,81,116,143,148],"systems.":[30],"Interestingly,":[31],"certain":[32],"emerging":[33],"such":[36],"as":[37],"SymFETs":[38,59,132],"BiSFETs":[40],"exhibit":[41],"an":[42,134],"I-V":[43],"characteristic":[44],"different":[45],"from":[46],"that":[47,64,131,139],"of":[48,55,71,111],"MOSFETs.":[49],"In":[50],"this":[51],"paper,":[52],"design":[54],"Boolean":[56],"gates":[57,118],"with":[58,119,124],"is":[60,163],"studied.":[61],"We":[62,107],"show":[63,130],"negative":[66],"differential":[67],"resistance":[68],"(NDR)":[69],"behavior":[70],"transistors":[73,121],"leads":[74],"to":[75,85,102],"hysteresis":[76],"in":[77,94],"inverters":[78],"buffers,":[80],"can":[82,90],"be":[83],"used":[84,93],"build":[86],"simple":[87],"Schmitttriggers.":[88],"It":[89],"also":[91],"by":[92],"designing":[95],"new":[96],"pseudo-SymFET":[97],"loads":[98],"similar":[101],"all-n-type":[103],"or":[104],"dynamic":[105,151],"logic.":[106],"demonstrate":[108,149],"feasibility":[110],"building":[112],"NAND,":[113],"NOR,":[114],"IMPLY,":[115],"MAJORITY":[117],"fewer":[120],"when":[122],"compared":[123],"static":[125],"CMOS":[126,155],"designs.":[127],"Benchmarking":[128],"efforts":[129],"attractive":[135],"choice":[136],"applications":[138],"demand":[140],"low":[141],"power":[142],"moderate":[145],"speed":[146],"requirements,":[147],"better":[150],"efficiency":[153],"than":[154],"circuits;":[156],"but":[157],"one":[158],"challenge":[159],"SymFET":[161],"relatively":[164],"larger":[165],"leakage":[166],"currents.":[167]},"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":3},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":2}],"updated_date":"2026-06-26T08:34:08.712188","created_date":"2025-10-10T00:00:00"}