{"id":"https://openalex.org/W4404030898","doi":"https://doi.org/10.1109/icccnt61001.2024.10724793","title":"Investigation of AlGaN/GaN HEMT Device Performance with Variation of GaN Cap Layer Thickness along with Doping Concentration","display_name":"Investigation of AlGaN/GaN HEMT Device Performance with Variation of GaN Cap Layer Thickness along with Doping Concentration","publication_year":2024,"publication_date":"2024-06-24","ids":{"openalex":"https://openalex.org/W4404030898","doi":"https://doi.org/10.1109/icccnt61001.2024.10724793"},"language":"en","primary_location":{"id":"doi:10.1109/icccnt61001.2024.10724793","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icccnt61001.2024.10724793","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 15th International Conference on Computing Communication and Networking Technologies (ICCCNT)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5041155174","display_name":"Ellapu Bhanu Prakash","orcid":"https://orcid.org/0009-0007-5483-8887"},"institutions":[{"id":"https://openalex.org/I195459967","display_name":"Mizoram University","ror":"https://ror.org/04b1m3e94","country_code":"IN","type":"education","lineage":["https://openalex.org/I195459967"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Ellapu Bhanu Prakash","raw_affiliation_strings":["NIT Mizoram,Dept. of ECE,Aizawl,Mizoram,India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NIT Mizoram,Dept. of ECE,Aizawl,Mizoram,India","institution_ids":["https://openalex.org/I195459967"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5114515981","display_name":"Vijay Maitra","orcid":null},"institutions":[{"id":"https://openalex.org/I195459967","display_name":"Mizoram University","ror":"https://ror.org/04b1m3e94","country_code":"IN","type":"education","lineage":["https://openalex.org/I195459967"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Vijay Maitra","raw_affiliation_strings":["NIT Mizoram,Dept. of ECE,Aizawl,Mizoram,India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NIT Mizoram,Dept. of ECE,Aizawl,Mizoram,India","institution_ids":["https://openalex.org/I195459967"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5011750818","display_name":"Anil Prasad Dadi","orcid":"https://orcid.org/0000-0003-1356-000X"},"institutions":[{"id":"https://openalex.org/I195459967","display_name":"Mizoram University","ror":"https://ror.org/04b1m3e94","country_code":"IN","type":"education","lineage":["https://openalex.org/I195459967"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Anil Prasad Dadi","raw_affiliation_strings":["NIT Mizoram,Dept. of ECE,Aizawl,Mizoram,India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NIT Mizoram,Dept. of ECE,Aizawl,Mizoram,India","institution_ids":["https://openalex.org/I195459967"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086895009","display_name":"Ashok K Ray","orcid":"https://orcid.org/0000-0003-2474-3207"},"institutions":[{"id":"https://openalex.org/I160302567","display_name":"North Eastern Regional Institute of Science and Technology","ror":"https://ror.org/01wbhqj28","country_code":"IN","type":"education","lineage":["https://openalex.org/I160302567"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Ashok Ray","raw_affiliation_strings":["North Eastern Regional Institute of Science and Technology,Dept. of ECE,Nirjuli,Arunachal Pradesh,India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"North Eastern Regional Institute of Science and Technology,Dept. of ECE,Nirjuli,Arunachal Pradesh,India","institution_ids":["https://openalex.org/I160302567"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5083110299","display_name":"Sushanta Bordoloi","orcid":"https://orcid.org/0000-0002-5179-0861"},"institutions":[{"id":"https://openalex.org/I4210157823","display_name":"Government of Mizoram","ror":"https://ror.org/05xemz742","country_code":"IN","type":"government","lineage":["https://openalex.org/I4210157823"]},{"id":"https://openalex.org/I91277730","display_name":"Maulana Azad National Institute of Technology","ror":"https://ror.org/026vtd268","country_code":"IN","type":"education","lineage":["https://openalex.org/I91277730"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Sushanta Bordoloi","raw_affiliation_strings":["National Institute of Technology Mizoram,Dept. of ECE,Aizawl,Mizoram,India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute of Technology Mizoram,Dept. of ECE,Aizawl,Mizoram,India","institution_ids":["https://openalex.org/I4210157823","https://openalex.org/I91277730"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":7.2391,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.97816092,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":97,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9987000226974487,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9987000226974487,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9420999884605408,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.8933621644973755},{"id":"https://openalex.org/keywords/doping","display_name":"Doping","score":0.7441633343696594},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.7335479855537415},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7112144827842712},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.6119199991226196},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.6050435900688171},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.598493218421936},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.191790372133255},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.15472689270973206},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.10401362180709839},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.06400254368782043},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.05410212278366089}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.8933621644973755},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.7441633343696594},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7335479855537415},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7112144827842712},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.6119199991226196},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.6050435900688171},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.598493218421936},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.191790372133255},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.15472689270973206},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.10401362180709839},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.06400254368782043},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.05410212278366089}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icccnt61001.2024.10724793","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icccnt61001.2024.10724793","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 15th International Conference on Computing Communication and Networking Technologies (ICCCNT)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":31,"referenced_works":["https://openalex.org/W1980281972","https://openalex.org/W1982218834","https://openalex.org/W1983457423","https://openalex.org/W2015014649","https://openalex.org/W2030604523","https://openalex.org/W2045193987","https://openalex.org/W2051846703","https://openalex.org/W2070809528","https://openalex.org/W2075495804","https://openalex.org/W2084039895","https://openalex.org/W2110238173","https://openalex.org/W2138681365","https://openalex.org/W2139228516","https://openalex.org/W2157738319","https://openalex.org/W2539521072","https://openalex.org/W2750608033","https://openalex.org/W2765405033","https://openalex.org/W2774076431","https://openalex.org/W2980162593","https://openalex.org/W2997402387","https://openalex.org/W2998448470","https://openalex.org/W3035877534","https://openalex.org/W3128746441","https://openalex.org/W3134631746","https://openalex.org/W3186108929","https://openalex.org/W3208859119","https://openalex.org/W4206167811","https://openalex.org/W4211171530","https://openalex.org/W4226089344","https://openalex.org/W4226189417","https://openalex.org/W4395666728"],"related_works":["https://openalex.org/W2472160638","https://openalex.org/W3209950509","https://openalex.org/W2559825181","https://openalex.org/W4377089489","https://openalex.org/W1975307200","https://openalex.org/W3042786859","https://openalex.org/W4313611767","https://openalex.org/W4385217635","https://openalex.org/W244742193","https://openalex.org/W2466508933"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"the":[3,41,63,73,76,84,113,140],"AIGaN/GaN":[4],"HEMT":[5],"without":[6],"and":[7,24,37,44,106,120],"with":[8,16,97,125],"GaN":[9],"cap":[10],"layer":[11],"($\\mathbf{G}_{\\text":[12],"{cap":[13,34],"}}$)":[14],"along":[15],"variation":[17],"in":[18],"its":[19],"thickness":[20,36],"($\\mathbf{d}_{G":[21],"a":[22,67,87,126,128],"N}$)":[23],"doping":[25,38,98],"concentration":[26,39],"was":[27],"presented.":[28],"It":[29],"is":[30,69],"observed":[31],"that":[32,83,138],"$\\mathbf{G}_{\\text":[33],"}}$":[35],"affects":[40],"electric":[42],"field":[43],"two":[45,53],"dimensional":[46,54],"electron":[47],"gas":[48,56],"(2DEG).":[49],"The":[50],"formation":[51],"of":[52,62,78,100],"hole":[55],"(2DHG)":[57],"at":[58,75],"lower":[59],"energy":[60],"level":[61],"device":[64,124],"when":[65],"$G_{c":[66,127],"p}$":[68,129],"employed":[70],"mainly":[71],"influences":[72],"2DEG":[74],"interface":[77],"AlGaN/GaN.":[79],"Our":[80],"investigation":[81],"found":[82],"varying":[85],"$\\mathbf{d}_{G":[86],"N}$":[88],"from":[89],"$10":[90],"\\mathbf{n":[91,95],"m}$":[92,96],"to":[93],"$3":[94],"concentrations":[99],"$7":[101],"\\times":[102,108],"10^{18}$":[103],"$\\mathbf{c":[104],"m}^{-3}$":[105,111],"$8":[107],"10^{18}":[109],"\\mathbf{c":[110],"improves":[112],"transconductance,":[114],"ON":[115],"state":[116],"current,":[117],"threshold":[118],"voltage":[119],"current":[121,134,137,147],"ratio.":[122,148],"A":[123],"exhibits":[130],"very":[131],"low":[132],"OFF-state":[133],"i.e":[135],"leakage":[136],"increases":[139],"($I_{O":[141],"N}":[142],"/":[143],"I_{O":[144],"F":[145],"F}$)":[146]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":4}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}