{"id":"https://openalex.org/W4312611097","doi":"https://doi.org/10.1109/icccnt54827.2022.9984269","title":"Characterization for Sub-5nm Technology Nodes of Junctionless Gate-All-Around Nanowire FETs","display_name":"Characterization for Sub-5nm Technology Nodes of Junctionless Gate-All-Around Nanowire FETs","publication_year":2022,"publication_date":"2022-10-03","ids":{"openalex":"https://openalex.org/W4312611097","doi":"https://doi.org/10.1109/icccnt54827.2022.9984269"},"language":"en","primary_location":{"id":"doi:10.1109/icccnt54827.2022.9984269","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icccnt54827.2022.9984269","pdf_url":null,"source":{"id":"https://openalex.org/S4363607876","display_name":"2022 13th International Conference on Computing Communication and Networking Technologies (ICCCNT)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 13th International Conference on Computing Communication and Networking Technologies (ICCCNT)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5065619561","display_name":"Aruru Sai Kumar","orcid":null},"institutions":[{"id":"https://openalex.org/I2801452159","display_name":"Vignana Jyothi Institute of Management","ror":"https://ror.org/02ken4f88","country_code":"IN","type":"education","lineage":["https://openalex.org/I2801452159"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"Aruru Sai Kumar","raw_affiliation_strings":["VNR Vignana Jyothi Institute of Engineering and Technology,Department of ECE,Hyderabad,India","Department of ECE, VNR Vignana Jyothi Institute of Engineering and Technology, Hyderabad, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"VNR Vignana Jyothi Institute of Engineering and Technology,Department of ECE,Hyderabad,India","institution_ids":["https://openalex.org/I2801452159"]},{"raw_affiliation_string":"Department of ECE, VNR Vignana Jyothi Institute of Engineering and Technology, Hyderabad, India","institution_ids":["https://openalex.org/I2801452159"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5034899642","display_name":"M. Deekshana","orcid":null},"institutions":[{"id":"https://openalex.org/I2801452159","display_name":"Vignana Jyothi Institute of Management","ror":"https://ror.org/02ken4f88","country_code":"IN","type":"education","lineage":["https://openalex.org/I2801452159"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"M. Deekshana","raw_affiliation_strings":["VNR Vignana Jyothi Institute of Engineering and Technology,Department of ECE,Hyderabad,India","Department of ECE, VNR Vignana Jyothi Institute of Engineering and Technology, Hyderabad, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"VNR Vignana Jyothi Institute of Engineering and Technology,Department of ECE,Hyderabad,India","institution_ids":["https://openalex.org/I2801452159"]},{"raw_affiliation_string":"Department of ECE, VNR Vignana Jyothi Institute of Engineering and Technology, Hyderabad, India","institution_ids":["https://openalex.org/I2801452159"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5045929648","display_name":"V. Bharath Sreenivasulu","orcid":"https://orcid.org/0000-0003-3064-1522"},"institutions":[{"id":"https://openalex.org/I876193797","display_name":"Vellore Institute of Technology University","ror":"https://ror.org/00qzypv28","country_code":"IN","type":"education","lineage":["https://openalex.org/I876193797"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"V. Bharath Sreenivasulu","raw_affiliation_strings":["Vellore institute of technology,Department of SENSE,Chennai,India","Department of SENSE, Vellore institute of technology, Chennai, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Vellore institute of technology,Department of SENSE,Chennai,India","institution_ids":["https://openalex.org/I876193797"]},{"raw_affiliation_string":"Department of SENSE, Vellore institute of technology, Chennai, India","institution_ids":["https://openalex.org/I876193797"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044069476","display_name":"Hari K. Somineni","orcid":"https://orcid.org/0000-0002-3178-1239"},"institutions":[{"id":"https://openalex.org/I2801452159","display_name":"Vignana Jyothi Institute of Management","ror":"https://ror.org/02ken4f88","country_code":"IN","type":"education","lineage":["https://openalex.org/I2801452159"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Rajendra Prasad Somineni","raw_affiliation_strings":["VNR Vignana Jyothi Institute of Engineering and Technology,Department of ECE,Hyderabad,India","Department of ECE, VNR Vignana Jyothi Institute of Engineering and Technology, Hyderabad, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"VNR Vignana Jyothi Institute of Engineering and Technology,Department of ECE,Hyderabad,India","institution_ids":["https://openalex.org/I2801452159"]},{"raw_affiliation_string":"Department of ECE, VNR Vignana Jyothi Institute of Engineering and Technology, Hyderabad, India","institution_ids":["https://openalex.org/I2801452159"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5068373697","display_name":"D Sudha","orcid":null},"institutions":[{"id":"https://openalex.org/I2801452159","display_name":"Vignana Jyothi Institute of Management","ror":"https://ror.org/02ken4f88","country_code":"IN","type":"education","lineage":["https://openalex.org/I2801452159"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"D. Kanthi Sudha","raw_affiliation_strings":["VNR Vignana Jyothi Institute of Engineering and Technology,Department of ECE,Hyderabad,India","Department of ECE, VNR Vignana Jyothi Institute of Engineering and Technology, Hyderabad, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"VNR Vignana Jyothi Institute of Engineering and Technology,Department of ECE,Hyderabad,India","institution_ids":["https://openalex.org/I2801452159"]},{"raw_affiliation_string":"Department of ECE, VNR Vignana Jyothi Institute of Engineering and Technology, Hyderabad, India","institution_ids":["https://openalex.org/I2801452159"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5065619561"],"corresponding_institution_ids":["https://openalex.org/I2801452159"],"apc_list":null,"apc_paid":null,"fwci":10.2126,"has_fulltext":false,"cited_by_count":33,"citation_normalized_percentile":{"value":0.99304671,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":94,"max":100},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nanowire","display_name":"Nanowire","score":0.6066761612892151},{"id":"https://openalex.org/keywords/controllability","display_name":"Controllability","score":0.540790319442749},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.4768211245536804},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.4437291920185089},{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.44056516885757446},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.42926186323165894},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.41610461473464966},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4129365384578705},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.38295668363571167},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.30547958612442017},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2922547459602356},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.14642900228500366},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.12329623103141785},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1094919741153717}],"concepts":[{"id":"https://openalex.org/C74214498","wikidata":"https://www.wikidata.org/wiki/Q631739","display_name":"Nanowire","level":2,"score":0.6066761612892151},{"id":"https://openalex.org/C48209547","wikidata":"https://www.wikidata.org/wiki/Q1331104","display_name":"Controllability","level":2,"score":0.540790319442749},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.4768211245536804},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.4437291920185089},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.44056516885757446},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.42926186323165894},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.41610461473464966},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4129365384578705},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.38295668363571167},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.30547958612442017},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2922547459602356},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.14642900228500366},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.12329623103141785},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1094919741153717},{"id":"https://openalex.org/C28826006","wikidata":"https://www.wikidata.org/wiki/Q33521","display_name":"Applied mathematics","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icccnt54827.2022.9984269","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icccnt54827.2022.9984269","pdf_url":null,"source":{"id":"https://openalex.org/S4363607876","display_name":"2022 13th International Conference on Computing Communication and Networking Technologies (ICCCNT)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 13th International Conference on Computing Communication and Networking Technologies (ICCCNT)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":33,"referenced_works":["https://openalex.org/W1924050149","https://openalex.org/W2040518993","https://openalex.org/W2161555441","https://openalex.org/W2329735910","https://openalex.org/W2517146661","https://openalex.org/W2567052660","https://openalex.org/W2614546709","https://openalex.org/W3008162119","https://openalex.org/W3088526462","https://openalex.org/W3121056949","https://openalex.org/W3121504151","https://openalex.org/W3126676222","https://openalex.org/W3131774269","https://openalex.org/W3154245359","https://openalex.org/W3162648013","https://openalex.org/W3194345311","https://openalex.org/W3195048628","https://openalex.org/W3198579829","https://openalex.org/W3210012880","https://openalex.org/W3215507788","https://openalex.org/W4200300965","https://openalex.org/W4200576083","https://openalex.org/W4220877154","https://openalex.org/W4223541459","https://openalex.org/W4224052072","https://openalex.org/W4225135417","https://openalex.org/W4247579535","https://openalex.org/W4285174817","https://openalex.org/W4295023924","https://openalex.org/W4297759959","https://openalex.org/W4304813542","https://openalex.org/W6791425266","https://openalex.org/W6804770103"],"related_works":["https://openalex.org/W2036697162","https://openalex.org/W2561315646","https://openalex.org/W2332386680","https://openalex.org/W2248621902","https://openalex.org/W2003779889","https://openalex.org/W2142353285","https://openalex.org/W2072424359","https://openalex.org/W2061674058","https://openalex.org/W2750055590","https://openalex.org/W1990516236"],"abstract_inverted_index":{"According":[0],"to":[1,34,63,120],"Moore\u2019s":[2],"law,":[3],"there":[4],"have":[5],"been":[6],"numerous":[7],"technological":[8],"advancements":[9],"that":[10,134],"are":[11,111],"currently":[12],"being":[13],"processed.":[14],"The":[15],"controllability":[16],"of":[17,46,102],"the":[18,43,65,93,117,130,148],"device":[19,94],"has":[20],"improved":[21],"significantly":[22],"since":[23],"a":[24,28,47,100,125,138],"basic":[25],"MOSFET":[26],"with":[27,36,113,129],"single":[29],"control":[30,38],"gate":[31],"was":[32],"changed":[33],"one":[35],"many":[37],"gates.":[39],"This":[40],"study":[41],"examines":[42],"DC":[44],"metrics":[45],"sub-5":[48],"nm":[49],"node,":[50],"junctionless":[51],"gate,":[52],"and":[53,89,97,106,108,142],"vertically":[54],"stacked":[55],"nanowire":[56,127],"field":[57],"effect":[58],"transistor":[59],"(FET).":[60],"In":[61],"order":[62],"improve":[64],"factors":[66],"I":[67,72],"<inf":[68,73,80,84],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[69,74,81,85],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">ON</inf>":[70,82],",":[71,76],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">OFF</inf>":[75,86],"switching":[77],"ratio":[78],"(I":[79],"/I":[83],"),":[87],"DIBL,":[88],"Sub":[90],"threshold":[91],"Swing,":[92],"is":[95,116],"tuned":[96],"compared.":[98],"Here,":[99],"variety":[101],"dielectric-permitivity":[103],"(k)":[104],"values":[105],"symmetric":[107],"asymmetric":[109],"spacing":[110],"employed":[112],"spacers.":[114],"3D-VTCAD":[115],"tool":[118],"used":[119],"evaluate":[121],"these":[122],"characteristics.":[123],"Therefore,":[124],"JL":[126],"FET":[128],"best":[131],"design":[132],"guarantees":[133],"it":[135],"can":[136],"be":[137],"candidate":[139],"for":[140],"low-power":[141],"superior":[143],"linearity":[144],"technology":[145],"nodes":[146],"in":[147],"future.":[149]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":28}],"updated_date":"2026-05-19T08:33:51.333923","created_date":"2025-10-10T00:00:00"}