{"id":"https://openalex.org/W4242786858","doi":"https://doi.org/10.1109/iccad.2014.7001418","title":"Large-signal MOSFET modeling using frequency-domain nonlinear system identification","display_name":"Large-signal MOSFET modeling using frequency-domain nonlinear system identification","publication_year":2014,"publication_date":"2014-11-01","ids":{"openalex":"https://openalex.org/W4242786858","doi":"https://doi.org/10.1109/iccad.2014.7001418"},"language":"en","primary_location":{"id":"doi:10.1109/iccad.2014.7001418","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iccad.2014.7001418","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5029789971","display_name":"Moning Zhang","orcid":null},"institutions":[{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Moning Zhang","raw_affiliation_strings":["Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Bejing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Bejing, China","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100733950","display_name":"Yang Tang","orcid":"https://orcid.org/0000-0003-0864-5842"},"institutions":[{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yang Tang","raw_affiliation_strings":["Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Bejing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Bejing, China","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5112436964","display_name":"Zuochang Ye","orcid":null},"institutions":[{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zuochang Ye","raw_affiliation_strings":["Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Bejing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Bejing, China","institution_ids":["https://openalex.org/I99065089"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I99065089"],"apc_list":null,"apc_paid":null,"fwci":0.4079,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.61741276,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"626","last_page":"632"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.773026704788208},{"id":"https://openalex.org/keywords/signal","display_name":"SIGNAL (programming language)","score":0.6680634021759033},{"id":"https://openalex.org/keywords/large-signal-model","display_name":"Large-signal model","score":0.6468315124511719},{"id":"https://openalex.org/keywords/frequency-domain","display_name":"Frequency domain","score":0.5835407972335815},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.558456301689148},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5417284965515137},{"id":"https://openalex.org/keywords/behavioral-modeling","display_name":"Behavioral modeling","score":0.5156125426292419},{"id":"https://openalex.org/keywords/nonlinear-system","display_name":"Nonlinear system","score":0.4900251626968384},{"id":"https://openalex.org/keywords/linearity","display_name":"Linearity","score":0.47774285078048706},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.44122788310050964},{"id":"https://openalex.org/keywords/radio-frequency","display_name":"Radio frequency","score":0.4358171224594116},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.4256120026111603},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.4180012047290802},{"id":"https://openalex.org/keywords/small-signal-model","display_name":"Small-signal model","score":0.4105815589427948},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.23473966121673584},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2272976040840149},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.21503055095672607},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.14336490631103516},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.1408849060535431},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.12885984778404236},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.10569560527801514}],"concepts":[{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.773026704788208},{"id":"https://openalex.org/C2779843651","wikidata":"https://www.wikidata.org/wiki/Q7390335","display_name":"SIGNAL (programming language)","level":2,"score":0.6680634021759033},{"id":"https://openalex.org/C2779542357","wikidata":"https://www.wikidata.org/wiki/Q6489019","display_name":"Large-signal model","level":3,"score":0.6468315124511719},{"id":"https://openalex.org/C19118579","wikidata":"https://www.wikidata.org/wiki/Q786423","display_name":"Frequency domain","level":2,"score":0.5835407972335815},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.558456301689148},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5417284965515137},{"id":"https://openalex.org/C78639753","wikidata":"https://www.wikidata.org/wiki/Q3318160","display_name":"Behavioral modeling","level":2,"score":0.5156125426292419},{"id":"https://openalex.org/C158622935","wikidata":"https://www.wikidata.org/wiki/Q660848","display_name":"Nonlinear system","level":2,"score":0.4900251626968384},{"id":"https://openalex.org/C77170095","wikidata":"https://www.wikidata.org/wiki/Q1753188","display_name":"Linearity","level":2,"score":0.47774285078048706},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.44122788310050964},{"id":"https://openalex.org/C74064498","wikidata":"https://www.wikidata.org/wiki/Q3396184","display_name":"Radio frequency","level":2,"score":0.4358171224594116},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.4256120026111603},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.4180012047290802},{"id":"https://openalex.org/C2781038218","wikidata":"https://www.wikidata.org/wiki/Q1773875","display_name":"Small-signal model","level":3,"score":0.4105815589427948},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.23473966121673584},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2272976040840149},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.21503055095672607},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.14336490631103516},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.1408849060535431},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.12885984778404236},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.10569560527801514},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C31972630","wikidata":"https://www.wikidata.org/wiki/Q844240","display_name":"Computer vision","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iccad.2014.7001418","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iccad.2014.7001418","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":20,"referenced_works":["https://openalex.org/W178056938","https://openalex.org/W1879678483","https://openalex.org/W2002505656","https://openalex.org/W2007382208","https://openalex.org/W2047048622","https://openalex.org/W2051862561","https://openalex.org/W2061891137","https://openalex.org/W2087899692","https://openalex.org/W2101786501","https://openalex.org/W2102076151","https://openalex.org/W2119695238","https://openalex.org/W2121106875","https://openalex.org/W2127135659","https://openalex.org/W2133642820","https://openalex.org/W2133644076","https://openalex.org/W2148091541","https://openalex.org/W2156265411","https://openalex.org/W6652090835","https://openalex.org/W6672617525","https://openalex.org/W6682958804"],"related_works":["https://openalex.org/W2108889951","https://openalex.org/W4386698253","https://openalex.org/W4256249666","https://openalex.org/W2004195054","https://openalex.org/W4386072449","https://openalex.org/W4390188441","https://openalex.org/W3123145176","https://openalex.org/W2015704357","https://openalex.org/W2039265762","https://openalex.org/W3015939133"],"abstract_inverted_index":{"Traditional":[0],"BSIM":[1],"MOSFET":[2,67],"model":[3,40,68,78,80],"extraction":[4],"considers":[5],"I-V/C-V":[6],"curve":[7],"fitting":[8,15],"to":[9,16,23,39],"capture":[10,17,99],"DC":[11,83],"non-linearity":[12],"and":[13,69,84,103],"S-parameter":[14,85],"high-frequency":[18,41,57],"small-signal":[19],"behavior.":[20,90],"This":[21],"leads":[22],"poor":[24],"accuracy":[25],"when":[26],"modeling":[27,56],"MOSFETs":[28],"in":[29],"large-signal":[30,42,58,70,89],"RF":[31,107],"circuits":[32],"such":[33],"as":[34],"power":[35],"amplifiers,":[36],"which":[37],"require":[38],"behavior":[43,59,105],"of":[44,106],"MOSFETs.":[45,61],"In":[46],"this":[47],"paper,":[48],"we":[49],"proposed":[50,95],"an":[51,76],"automatic":[52],"method":[53,96],"for":[54,60],"automatically":[55],"The":[62,73],"input":[63],"is":[64,75],"a":[65],"pre-characterized":[66],"measurement":[71],"data.":[72],"output":[74],"enhanced":[77],"that":[79,93],"not":[81],"only":[82],"characteristics":[86],"but":[87],"also":[88],"Experiments":[91],"show":[92],"the":[94,101],"can":[97],"accurately":[98],"both":[100],"nonlinear":[102],"dynamic":[104],"MOSFET.":[108]},"counts_by_year":[{"year":2014,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}