{"id":"https://openalex.org/W2548416568","doi":"https://doi.org/10.1109/icacci.2016.7732424","title":"DTMOS based low voltage high performance FVF-OTA and its application in MISO filter","display_name":"DTMOS based low voltage high performance FVF-OTA and its application in MISO filter","publication_year":2016,"publication_date":"2016-09-01","ids":{"openalex":"https://openalex.org/W2548416568","doi":"https://doi.org/10.1109/icacci.2016.7732424","mag":"2548416568"},"language":"en","primary_location":{"id":"doi:10.1109/icacci.2016.7732424","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icacci.2016.7732424","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 International Conference on Advances in Computing, Communications and Informatics (ICACCI)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5079352801","display_name":"Niharika Narang","orcid":"https://orcid.org/0000-0002-0665-4078"},"institutions":[{"id":"https://openalex.org/I36090812","display_name":"Netaji Subhas University of Technology","ror":"https://ror.org/01fczmh85","country_code":"IN","type":"education","lineage":["https://openalex.org/I36090812"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"Niharika Narang","raw_affiliation_strings":["Department of Electronics & Communication Engineering, Netaji Subhas Institute of Technology (NSIT), New Delhi, India"],"affiliations":[{"raw_affiliation_string":"Department of Electronics & Communication Engineering, Netaji Subhas Institute of Technology (NSIT), New Delhi, India","institution_ids":["https://openalex.org/I36090812"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012623844","display_name":"Bhawna Aggarwal","orcid":"https://orcid.org/0000-0002-4165-0320"},"institutions":[{"id":"https://openalex.org/I36090812","display_name":"Netaji Subhas University of Technology","ror":"https://ror.org/01fczmh85","country_code":"IN","type":"education","lineage":["https://openalex.org/I36090812"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Bhawna Aggarwal","raw_affiliation_strings":["Department of Electronics & Communication Engineering, Netaji Subhas Institute of Technology (NSIT), New Delhi, India"],"affiliations":[{"raw_affiliation_string":"Department of Electronics & Communication Engineering, Netaji Subhas Institute of Technology (NSIT), New Delhi, India","institution_ids":["https://openalex.org/I36090812"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5074378487","display_name":"Maneesha Gupta","orcid":"https://orcid.org/0000-0003-2495-678X"},"institutions":[{"id":"https://openalex.org/I36090812","display_name":"Netaji Subhas University of Technology","ror":"https://ror.org/01fczmh85","country_code":"IN","type":"education","lineage":["https://openalex.org/I36090812"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Maneesha Gupta","raw_affiliation_strings":["Department of Electronics & Communication Engineering, Netaji Subhas Institute of Technology (NSIT), New Delhi, India"],"affiliations":[{"raw_affiliation_string":"Department of Electronics & Communication Engineering, Netaji Subhas Institute of Technology (NSIT), New Delhi, India","institution_ids":["https://openalex.org/I36090812"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5079352801"],"corresponding_institution_ids":["https://openalex.org/I36090812"],"apc_list":null,"apc_paid":null,"fwci":0.1709,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.58085486,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"2446","last_page":"2452"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9955000281333923,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transconductance","display_name":"Transconductance","score":0.8318991661071777},{"id":"https://openalex.org/keywords/operational-transconductance-amplifier","display_name":"Operational transconductance amplifier","score":0.6531573534011841},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5725584626197815},{"id":"https://openalex.org/keywords/buffer-amplifier","display_name":"Buffer amplifier","score":0.46891841292381287},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3941759169101715},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3883078694343567},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3456110954284668},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3400491178035736},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.3088915944099426},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.25612908601760864},{"id":"https://openalex.org/keywords/operational-amplifier","display_name":"Operational amplifier","score":0.2532808780670166},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.24864035844802856},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.1944289207458496}],"concepts":[{"id":"https://openalex.org/C2779283907","wikidata":"https://www.wikidata.org/wiki/Q1632964","display_name":"Transconductance","level":4,"score":0.8318991661071777},{"id":"https://openalex.org/C58117264","wikidata":"https://www.wikidata.org/wiki/Q1239595","display_name":"Operational transconductance amplifier","level":5,"score":0.6531573534011841},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5725584626197815},{"id":"https://openalex.org/C127749002","wikidata":"https://www.wikidata.org/wiki/Q978470","display_name":"Buffer amplifier","level":4,"score":0.46891841292381287},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3941759169101715},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3883078694343567},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3456110954284668},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3400491178035736},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.3088915944099426},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.25612908601760864},{"id":"https://openalex.org/C145366948","wikidata":"https://www.wikidata.org/wiki/Q178947","display_name":"Operational amplifier","level":4,"score":0.2532808780670166},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.24864035844802856},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1944289207458496}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icacci.2016.7732424","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icacci.2016.7732424","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 International Conference on Advances in Computing, Communications and Informatics (ICACCI)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8100000023841858}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W1544736463","https://openalex.org/W1547645614","https://openalex.org/W1977080569","https://openalex.org/W2013459684","https://openalex.org/W2043281732","https://openalex.org/W2044919502","https://openalex.org/W2065296478","https://openalex.org/W2099760741","https://openalex.org/W2102859594","https://openalex.org/W2118902492","https://openalex.org/W2131849582","https://openalex.org/W2134156864","https://openalex.org/W2138536318","https://openalex.org/W2157321309","https://openalex.org/W2183295475","https://openalex.org/W2185491493","https://openalex.org/W2534688292","https://openalex.org/W2910685221","https://openalex.org/W4285719527","https://openalex.org/W6632882433","https://openalex.org/W6686161964"],"related_works":["https://openalex.org/W2783539788","https://openalex.org/W2751368018","https://openalex.org/W4293528144","https://openalex.org/W2792031931","https://openalex.org/W2341419291","https://openalex.org/W1530143999","https://openalex.org/W2556688074","https://openalex.org/W2074850648","https://openalex.org/W3113698884","https://openalex.org/W4225146906"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,112,140],"high":[4,29,35,47,51],"performance":[5],"Dynamic":[6],"Threshold":[7],"MOSFET":[8],"(DTMOS)":[9],"based":[10,22,87],"low":[11,26],"voltage":[12,27,121],"Flip":[13],"Voltage":[14],"Follower-Operational":[15],"Transconductance":[16],"Amplifier":[17],"(FVF-OTA).":[18],"The":[19],"proposed":[20,66,85,91,110,137,149],"DTMOS":[21,33,56,86],"FVF-OTA":[23],"combines":[24],"the":[25,62,65,84,109,136,146],"and":[28,38,93,126,155,161],"transconductance":[30,63,113],"properties":[31],"of":[32,44,64,90,114,122,129,142,148,158],"with":[34,50],"input":[36],"impedance":[37],"wide":[39],"output":[40],"current":[41],"range":[42],"characteristics":[43],"FVF-OTA.":[45,88],"Furthermore,":[46],"linearity":[48],"along":[49],"bandwidth":[52,141],"is":[53,71,81,116],"achieved":[54,117],"through":[55],"technique.":[57],"To":[58,144],"show":[59],"enhancement":[60],"in":[61,100,104,153],"circuit,":[67,111],"small":[68],"signal":[69],"analysis":[70,164],"carried":[72],"out.":[73],"Moreover,":[74,131],"Multi":[75],"Input":[76],"Single":[77],"Output":[78],"(MISO)":[79],"filter":[80,96,133],"realized":[82,134],"using":[83,135],"Simulations":[89],"OTA":[92,138],"its":[94],"MISO":[95,132],"application":[97],"are":[98],"done":[99],"Eldospice":[101],"(Mentor":[102],"Graphics)":[103],"TSMC":[105],"0.18\u03bcm":[106],"technology.":[107],"In":[108],"314.73\u03bcS":[115],"at":[118],"an":[119],"operating":[120],"\u00b1":[123],"0.5":[124],"V":[125],"power":[127],"dissipation":[128],"70.19\u03bcW.":[130],"attains":[139],"43.91MHz.":[143],"validate":[145],"robustness":[147],"circuit":[150],"against":[151],"variations":[152],"temperature":[154,160],"aspect":[156],"ratios":[157],"MOSFETs,":[159],"Monte":[162],"Carlo":[163],"have":[165],"been":[166],"done.":[167]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2018,"cited_by_count":1}],"updated_date":"2026-01-13T01:12:25.745995","created_date":"2025-10-10T00:00:00"}