{"id":"https://openalex.org/W7148375692","doi":"https://doi.org/10.1109/hipcw66559.2025.00036","title":"Multiscale Modelling of Metal-Organic Chemical Vapour Deposition (MOCVD) Process for GaAs growth","display_name":"Multiscale Modelling of Metal-Organic Chemical Vapour Deposition (MOCVD) Process for GaAs growth","publication_year":2025,"publication_date":"2025-12-17","ids":{"openalex":"https://openalex.org/W7148375692","doi":"https://doi.org/10.1109/hipcw66559.2025.00036"},"language":null,"primary_location":{"id":"doi:10.1109/hipcw66559.2025.00036","is_oa":false,"landing_page_url":"https://doi.org/10.1109/hipcw66559.2025.00036","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE 32nd International Conference on High Performance Computing, Data and Analytics Workshop (HiPCW)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5118146681","display_name":"Hrishi Viral Harsora","orcid":null},"institutions":[{"id":"https://openalex.org/I27674431","display_name":"Indian Institute of Technology Gandhinagar","ror":"https://ror.org/0036p5w23","country_code":"IN","type":"education","lineage":["https://openalex.org/I27674431"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"Hrishi Viral Harsora","raw_affiliation_strings":["IIT Gandhinagar,Department of Materials Engineering,Gandhinagar,India"],"affiliations":[{"raw_affiliation_string":"IIT Gandhinagar,Department of Materials Engineering,Gandhinagar,India","institution_ids":["https://openalex.org/I27674431"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086478143","display_name":"Soham Sinha","orcid":"https://orcid.org/0000-0001-8598-0543"},"institutions":[{"id":"https://openalex.org/I27674431","display_name":"Indian Institute of Technology Gandhinagar","ror":"https://ror.org/0036p5w23","country_code":"IN","type":"education","lineage":["https://openalex.org/I27674431"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Soham Sinha","raw_affiliation_strings":["IIT Gandhinagar,Department of Electrical Engineering,Gandhinagar,India"],"affiliations":[{"raw_affiliation_string":"IIT Gandhinagar,Department of Electrical Engineering,Gandhinagar,India","institution_ids":["https://openalex.org/I27674431"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5050778934","display_name":"Tarun Agarwal","orcid":"https://orcid.org/0000-0001-7529-6932"},"institutions":[{"id":"https://openalex.org/I27674431","display_name":"Indian Institute of Technology Gandhinagar","ror":"https://ror.org/0036p5w23","country_code":"IN","type":"education","lineage":["https://openalex.org/I27674431"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Tarun Kumar Agarwal","raw_affiliation_strings":["IIT Gandhinagar,Department of Electrical Engineering,Gandhinagar,India"],"affiliations":[{"raw_affiliation_string":"IIT Gandhinagar,Department of Electrical Engineering,Gandhinagar,India","institution_ids":["https://openalex.org/I27674431"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5118146681"],"corresponding_institution_ids":["https://openalex.org/I27674431"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.74043003,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"143","last_page":"144"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.17499999701976776,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.17499999701976776,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.147599995136261,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.07670000195503235,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/chemical-vapor-deposition","display_name":"Chemical vapor deposition","score":0.6092000007629395},{"id":"https://openalex.org/keywords/process","display_name":"Process (computing)","score":0.6090999841690063},{"id":"https://openalex.org/keywords/deposition","display_name":"Deposition (geology)","score":0.4546999931335449},{"id":"https://openalex.org/keywords/metalorganic-vapour-phase-epitaxy","display_name":"Metalorganic vapour phase epitaxy","score":0.3127000033855438},{"id":"https://openalex.org/keywords/work","display_name":"Work (physics)","score":0.274399995803833}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.628000020980835},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.6092000007629395},{"id":"https://openalex.org/C98045186","wikidata":"https://www.wikidata.org/wiki/Q205663","display_name":"Process (computing)","level":2,"score":0.6090999841690063},{"id":"https://openalex.org/C64297162","wikidata":"https://www.wikidata.org/wiki/Q1987070","display_name":"Deposition (geology)","level":3,"score":0.4546999931335449},{"id":"https://openalex.org/C175665537","wikidata":"https://www.wikidata.org/wiki/Q1924991","display_name":"Metalorganic vapour phase epitaxy","level":4,"score":0.3127000033855438},{"id":"https://openalex.org/C18762648","wikidata":"https://www.wikidata.org/wiki/Q42213","display_name":"Work (physics)","level":2,"score":0.274399995803833},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.27140000462532043},{"id":"https://openalex.org/C2989315489","wikidata":"https://www.wikidata.org/wiki/Q2659774","display_name":"Semiconductor materials","level":3,"score":0.2515000104904175},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.2492000013589859},{"id":"https://openalex.org/C141123601","wikidata":"https://www.wikidata.org/wiki/Q6935072","display_name":"Multiscale modeling","level":2,"score":0.24699999392032623}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/hipcw66559.2025.00036","is_oa":false,"landing_page_url":"https://doi.org/10.1109/hipcw66559.2025.00036","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 IEEE 32nd International Conference on High Performance Computing, Data and Analytics Workshop (HiPCW)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":2,"referenced_works":["https://openalex.org/W2166522131","https://openalex.org/W3021627615"],"related_works":[],"abstract_inverted_index":{"MOCVD":[0],"process":[1,139],"finds":[2],"extensive":[3],"application":[4],"in":[5,47],"growing":[6],"thin":[7,25,38],"films":[8,26,39,82],"for":[9],"devices":[10],"such":[11],"as":[12],"solar":[13],"cells":[14],"and":[15,55,65,86,101,136],"High":[16],"Electron":[17],"Mobility":[18],"Transistors":[19],"(HEMTs).":[20],"The":[21],"quality":[22,36],"of":[23,31,37,53,63,80,132],"the":[24,29,32,35,51,78,98,109,116,130,133,137],"directly":[27],"impacts":[28],"performance":[30],"device.":[33],"Therefore":[34],"is":[40,95,112],"usually":[41],"improved":[42],"though":[43],"repeated":[44],"experimental":[45],"runs":[46],"a":[48,60,72,102,127],"reactor.":[49],"Reducing":[50],"number":[52],"trial":[54],"error":[56],"cycles":[57],"can":[58],"save":[59],"significant":[61],"amount":[62],"time":[64],"resources.":[66],"In":[67],"this":[68],"paper,":[69],"we":[70],"present":[71,126],"multiscale":[73],"computational":[74],"model":[75,77],"to":[76,114,121,125],"growth":[79],"GaAs":[81],"at":[83,97,108],"both":[84,123],"reactor":[85,99],"atomic":[87,110],"scales.":[88],"A":[89],"Computational":[90],"Fluid":[91],"Dynamics":[92],"(CFD)":[93],"framework":[94,107],"employed":[96],"scale":[100,111],"Kinetic":[103],"Monte":[104],"Carlo":[105],"(KMC)":[106],"developed":[113],"study":[115],"growth.":[117],"We":[118],"also":[119],"attempt":[120],"couple":[122],"frameworks":[124],"correlation":[128],"between":[129],"characteristics":[131],"grown":[134],"film":[135],"reactor-scale":[138],"parameters.":[140]},"counts_by_year":[],"updated_date":"2026-04-03T16:44:17.987007","created_date":"2026-04-03T00:00:00"}