{"id":"https://openalex.org/W2567091310","doi":"https://doi.org/10.1109/gcce.2016.7800464","title":"ESD protection design for the 45-V pLDMOS-SCR (p-n-p-arranged) devices with source-discrete distributions","display_name":"ESD protection design for the 45-V pLDMOS-SCR (p-n-p-arranged) devices with source-discrete distributions","publication_year":2016,"publication_date":"2016-10-01","ids":{"openalex":"https://openalex.org/W2567091310","doi":"https://doi.org/10.1109/gcce.2016.7800464","mag":"2567091310"},"language":"en","primary_location":{"id":"doi:10.1109/gcce.2016.7800464","is_oa":false,"landing_page_url":"https://doi.org/10.1109/gcce.2016.7800464","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 IEEE 5th Global Conference on Consumer Electronics","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5033483329","display_name":"Shen-Li Chen","orcid":"https://orcid.org/0000-0001-7860-3889"},"institutions":[{"id":"https://openalex.org/I125934054","display_name":"National United University","ror":"https://ror.org/04twccc71","country_code":"TW","type":"education","lineage":["https://openalex.org/I125934054"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"Shen-Li Chen","raw_affiliation_strings":["Dept. of Electronic Engineering, National United University, MiaoLi City, Taiwan"],"affiliations":[{"raw_affiliation_string":"Dept. of Electronic Engineering, National United University, MiaoLi City, Taiwan","institution_ids":["https://openalex.org/I125934054"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029480399","display_name":"Yu\u2010Ting Huang","orcid":"https://orcid.org/0000-0002-5011-7587"},"institutions":[{"id":"https://openalex.org/I125934054","display_name":"National United University","ror":"https://ror.org/04twccc71","country_code":"TW","type":"education","lineage":["https://openalex.org/I125934054"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Yu-Ting Huang","raw_affiliation_strings":["Dept. of Electronic Engineering, National United University, MiaoLi City, Taiwan"],"affiliations":[{"raw_affiliation_string":"Dept. of Electronic Engineering, National United University, MiaoLi City, Taiwan","institution_ids":["https://openalex.org/I125934054"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110503258","display_name":"Chih-Ying Yen","orcid":null},"institutions":[{"id":"https://openalex.org/I125934054","display_name":"National United University","ror":"https://ror.org/04twccc71","country_code":"TW","type":"education","lineage":["https://openalex.org/I125934054"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chih-Ying Yen","raw_affiliation_strings":["Dept. of Electronic Engineering, National United University, MiaoLi City, Taiwan"],"affiliations":[{"raw_affiliation_string":"Dept. of Electronic Engineering, National United University, MiaoLi City, Taiwan","institution_ids":["https://openalex.org/I125934054"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5001592520","display_name":"Kuei-Jyun Chen","orcid":null},"institutions":[{"id":"https://openalex.org/I125934054","display_name":"National United University","ror":"https://ror.org/04twccc71","country_code":"TW","type":"education","lineage":["https://openalex.org/I125934054"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Kuei-Jyun Chen","raw_affiliation_strings":["Dept. of Electronic Engineering, National United University, MiaoLi City, Taiwan"],"affiliations":[{"raw_affiliation_string":"Dept. of Electronic Engineering, National United University, MiaoLi City, Taiwan","institution_ids":["https://openalex.org/I125934054"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102242769","display_name":"Yi-Cih Wu","orcid":null},"institutions":[{"id":"https://openalex.org/I125934054","display_name":"National United University","ror":"https://ror.org/04twccc71","country_code":"TW","type":"education","lineage":["https://openalex.org/I125934054"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Yi-Cih Wu","raw_affiliation_strings":["Dept. of Electronic Engineering, National United University, MiaoLi City, Taiwan"],"affiliations":[{"raw_affiliation_string":"Dept. of Electronic Engineering, National United University, MiaoLi City, Taiwan","institution_ids":["https://openalex.org/I125934054"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108665127","display_name":"Jia-Ming Lin","orcid":null},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jia-Ming Lin","raw_affiliation_strings":["Dept. of Integrated Circuits Design and Engineering, Peking University, Wuxi City, China"],"affiliations":[{"raw_affiliation_string":"Dept. of Integrated Circuits Design and Engineering, Peking University, Wuxi City, China","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5014264799","display_name":"Chih-Hung Yang","orcid":null},"institutions":[{"id":"https://openalex.org/I125934054","display_name":"National United University","ror":"https://ror.org/04twccc71","country_code":"TW","type":"education","lineage":["https://openalex.org/I125934054"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chih-Hung Yang","raw_affiliation_strings":["Dept. of Electronic Engineering, National United University, MiaoLi City, Taiwan"],"affiliations":[{"raw_affiliation_string":"Dept. of Electronic Engineering, National United University, MiaoLi City, Taiwan","institution_ids":["https://openalex.org/I125934054"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5033483329"],"corresponding_institution_ids":["https://openalex.org/I125934054"],"apc_list":null,"apc_paid":null,"fwci":0.1838,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.60543705,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9972000122070312,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9970999956130981,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/electrostatic-discharge","display_name":"Electrostatic discharge","score":0.7849593162536621},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.5709507465362549},{"id":"https://openalex.org/keywords/upgrade","display_name":"Upgrade","score":0.5700604319572449},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5088565349578857},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4466627836227417},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.36652839183807373},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.3416597247123718},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.2772887349128723},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2642285227775574},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.2629869282245636},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2481284737586975},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.12272581458091736}],"concepts":[{"id":"https://openalex.org/C205483674","wikidata":"https://www.wikidata.org/wiki/Q3574961","display_name":"Electrostatic discharge","level":3,"score":0.7849593162536621},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.5709507465362549},{"id":"https://openalex.org/C2780615140","wikidata":"https://www.wikidata.org/wiki/Q920419","display_name":"Upgrade","level":2,"score":0.5700604319572449},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5088565349578857},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4466627836227417},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.36652839183807373},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3416597247123718},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.2772887349128723},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2642285227775574},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2629869282245636},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2481284737586975},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.12272581458091736},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/gcce.2016.7800464","is_oa":false,"landing_page_url":"https://doi.org/10.1109/gcce.2016.7800464","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 IEEE 5th Global Conference on Consumer Electronics","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.6499999761581421,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1579185301","https://openalex.org/W1654031464","https://openalex.org/W2097928422","https://openalex.org/W2144642572","https://openalex.org/W2158284490","https://openalex.org/W2310109736","https://openalex.org/W2317981934","https://openalex.org/W6634529506","https://openalex.org/W6674416986","https://openalex.org/W6683684420"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W2368672678","https://openalex.org/W2370626080","https://openalex.org/W2965111880","https://openalex.org/W2368576029","https://openalex.org/W2377210208","https://openalex.org/W116478885","https://openalex.org/W2391279445","https://openalex.org/W2390420166","https://openalex.org/W2354998446"],"abstract_inverted_index":{"An":[0],"evaluation":[1],"of":[2,11,95,146],"electrostatic-discharge":[3],"(ESD)":[4],"reliability":[5],"by":[6],"changing":[7],"the":[8,45,59,61,82,90,105,113,118,143,151,162],"source-end":[9],"layout":[10],"45-V":[12,101],"HV":[13],"pLDMOS":[14,33,50],"devices":[15],"is":[16,35,159],"investigated":[17],"in":[18,39,58,142,161],"this":[19,156],"paper.":[20],"After":[21],"testing":[22],"and":[23,86],"systematic":[24],"analysis,":[25],"it":[26,134],"can":[27,66,135],"be":[28,67,136],"found":[29],"that":[30,138],"a":[31,49,52,74,79,139,147],"traditional":[32],"sample":[34],"always":[36],"very":[37],"weak":[38],"ESD":[40],"issues":[41],"(It2=":[42],"0.107-A).":[43],"At":[44],"same":[46],"time,":[47],"if":[48],"with":[51,73,112],"stripe":[53,84],"type":[54,85],"embedded":[55,157],"SCR":[56,158],"(p-n-p-arrangement":[57],"drain-end);":[60],"corresponding":[62],"secondary":[63,119],"breakdown-current":[64,120],"value":[65],"improved":[68],"about":[69,100],"501.9%":[70],"as":[71,155],"comparing":[72],"pure":[75],"pLDMOS.":[76],"Furthermore,":[77],"when":[78],"pLDMOS-SCR":[80,148],"possesses":[81],"p-n-p-arranged":[83,160],"source":[87,144],"discrete":[88,140],"technique,":[89],"trigger":[91],"voltage":[92],"(Vt1)":[93],"values":[94,108],"these":[96],"samples":[97],"are":[98,123],"all":[99],"~":[102,127],"47-V.":[103],"Next,":[104],"holding-voltage":[106],"(Vh)":[107],"were":[109],"slowly":[110],"increased":[111],"OD-rows":[114],"number":[115],"decreased.":[116],"Also,":[117],"(It2)":[121],"capabilities":[122],"upgraded":[124],"to":[125],"3-A":[126],"4-A":[128],"except":[129],"for":[130],"S_DIS":[131],"3.":[132],"Eventually,":[133],"concluded":[137],"distribution":[141],"region":[145],"will":[149],"upgrade":[150],"anti-ESD":[152],"capability":[153],"effectively":[154],"drain":[163],"side.":[164]},"counts_by_year":[{"year":2019,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}