{"id":"https://openalex.org/W2982430686","doi":"https://doi.org/10.1109/ewdts.2019.8884454","title":"Technique to Simulate Oscillator Circuits with the Degradation Models","display_name":"Technique to Simulate Oscillator Circuits with the Degradation Models","publication_year":2019,"publication_date":"2019-09-01","ids":{"openalex":"https://openalex.org/W2982430686","doi":"https://doi.org/10.1109/ewdts.2019.8884454","mag":"2982430686"},"language":"en","primary_location":{"id":"doi:10.1109/ewdts.2019.8884454","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ewdts.2019.8884454","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE East-West Design & Test Symposium (EWDTS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5085445165","display_name":"M.M. Gourary","orcid":null},"institutions":[{"id":"https://openalex.org/I4210096404","display_name":"Institute for Design Problems in Microelectronics","ror":"https://ror.org/00t7t9a43","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096404","https://openalex.org/I4210097085"]}],"countries":["RU"],"is_corresponding":true,"raw_author_name":"Mark M. Gourary","raw_affiliation_strings":["CAD Department, Institute for Design Problems in Microelectronics, Moscow, Russia"],"affiliations":[{"raw_affiliation_string":"CAD Department, Institute for Design Problems in Microelectronics, Moscow, Russia","institution_ids":["https://openalex.org/I4210096404"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079348082","display_name":"\u0421.\u0413. \u0420\u0443\u0441\u0430\u043a\u043e\u0432","orcid":"https://orcid.org/0000-0001-6107-2866"},"institutions":[{"id":"https://openalex.org/I4210096404","display_name":"Institute for Design Problems in Microelectronics","ror":"https://ror.org/00t7t9a43","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096404","https://openalex.org/I4210097085"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"Sergey G. Rusakov","raw_affiliation_strings":["CAD Department, Institute for Design Problems in Microelectronics, Moscow, Russia"],"affiliations":[{"raw_affiliation_string":"CAD Department, Institute for Design Problems in Microelectronics, Moscow, Russia","institution_ids":["https://openalex.org/I4210096404"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075934580","display_name":"S.L. Ulyanov","orcid":"https://orcid.org/0000-0002-9182-1247"},"institutions":[{"id":"https://openalex.org/I4210096404","display_name":"Institute for Design Problems in Microelectronics","ror":"https://ror.org/00t7t9a43","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096404","https://openalex.org/I4210097085"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"Sergey L. Ulyanov","raw_affiliation_strings":["CAD Department, Institute for Design Problems in Microelectronics, Moscow, Russia"],"affiliations":[{"raw_affiliation_string":"CAD Department, Institute for Design Problems in Microelectronics, Moscow, Russia","institution_ids":["https://openalex.org/I4210096404"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5084866297","display_name":"\u041c.\u041c. \u0416\u0430\u0440\u043e\u0432","orcid":null},"institutions":[{"id":"https://openalex.org/I4210096404","display_name":"Institute for Design Problems in Microelectronics","ror":"https://ror.org/00t7t9a43","country_code":"RU","type":"facility","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4210096404","https://openalex.org/I4210097085"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"Michael M. Zharov","raw_affiliation_strings":["CAD Department, Institute for Design Problems in Microelectronics, Moscow, Russia"],"affiliations":[{"raw_affiliation_string":"CAD Department, Institute for Design Problems in Microelectronics, Moscow, Russia","institution_ids":["https://openalex.org/I4210096404"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5085445165"],"corresponding_institution_ids":["https://openalex.org/I4210096404"],"apc_list":null,"apc_paid":null,"fwci":0.1192,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.47576864,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"12","issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.7749443650245667},{"id":"https://openalex.org/keywords/harmonic-balance","display_name":"Harmonic balance","score":0.6666258573532104},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.604417622089386},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.5682553052902222},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5315446853637695},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5008516311645508},{"id":"https://openalex.org/keywords/very-large-scale-integration","display_name":"Very-large-scale integration","score":0.4665882885456085},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4596061706542969},{"id":"https://openalex.org/keywords/nonlinear-system","display_name":"Nonlinear system","score":0.4445056617259979},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.4109989106655121},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3446883261203766},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2843795418739319},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.21349692344665527},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.09691309928894043}],"concepts":[{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.7749443650245667},{"id":"https://openalex.org/C121758426","wikidata":"https://www.wikidata.org/wiki/Q5659248","display_name":"Harmonic balance","level":3,"score":0.6666258573532104},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.604417622089386},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.5682553052902222},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5315446853637695},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5008516311645508},{"id":"https://openalex.org/C14580979","wikidata":"https://www.wikidata.org/wiki/Q876049","display_name":"Very-large-scale integration","level":2,"score":0.4665882885456085},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4596061706542969},{"id":"https://openalex.org/C158622935","wikidata":"https://www.wikidata.org/wiki/Q660848","display_name":"Nonlinear system","level":2,"score":0.4445056617259979},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.4109989106655121},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3446883261203766},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2843795418739319},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.21349692344665527},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.09691309928894043},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/ewdts.2019.8884454","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ewdts.2019.8884454","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE East-West Design & Test Symposium (EWDTS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7200000286102295,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W1495851026","https://openalex.org/W1970620885","https://openalex.org/W1991891926","https://openalex.org/W2062874667","https://openalex.org/W2105900842","https://openalex.org/W2107073052","https://openalex.org/W2107944009","https://openalex.org/W2112542663","https://openalex.org/W2115726748","https://openalex.org/W2133831885","https://openalex.org/W2145774126","https://openalex.org/W2156064231","https://openalex.org/W2156824182","https://openalex.org/W2474892956","https://openalex.org/W3152276207","https://openalex.org/W4233474994","https://openalex.org/W6677446150","https://openalex.org/W6682867480"],"related_works":["https://openalex.org/W2374313965","https://openalex.org/W2157278395","https://openalex.org/W4283025278","https://openalex.org/W61292821","https://openalex.org/W2082432309","https://openalex.org/W2071623546","https://openalex.org/W2167195438","https://openalex.org/W2843479960","https://openalex.org/W1486275014","https://openalex.org/W2408741323"],"abstract_inverted_index":{"The":[0,125,135],"approach":[1,20,92,126,136],"to":[2,23,77,86,116,139],"predict":[3],"the":[4,30,36,43,54,71,74,82,87,90,99,105,112,118,122,132],"effect":[5,38],"of":[6,32,39,45,73,81,98],"negative":[7,40],"electro-temperature":[8],"instability":[9],"(NBTI-effect)":[10],"in":[11],"analog":[12],"VLSI":[13],"using":[14],"circuit":[15,25,76,129],"simulators":[16],"is":[17,21,58,137],"proposed.":[18],"This":[19],"directed":[22],"simulate":[24],"behavior":[26],"taking":[27],"into":[28,70],"account":[29],"growth":[31],"threshold":[33],"voltage":[34,41],"under":[35],"long-term":[37],"on":[42,53],"gate":[44],"p-MOSFET":[46],"transistors.":[47],"A":[48],"new":[49,91],"computational":[50,113],"procedure":[51,62],"based":[52],"harmonic":[55],"balance":[56],"method":[57,120],"developed.":[59],"In":[60,84],"this":[61],"NBTI":[63,100,133],"models":[64],"are":[65],"included":[66],"as":[67],"nonlinear":[68],"elements":[69],"model":[72,101],"analyzed":[75],"perform":[78],"numerical":[79],"analysis":[80],"NBTI-effect.":[83],"contrast":[85],"known":[88],"methods,":[89],"does":[93],"not":[94],"require":[95],"preliminary":[96],"estimation":[97],"parameters":[102],"averaged":[103],"over":[104],"signal":[106],"period.":[107],"It":[108],"also":[109],"provides":[110,127],"reducing":[111],"costs":[114],"due":[115],"selecting":[117],"integration":[119,123],"and":[121],"step.":[124],"oscillator":[128],"simulation":[130],"with":[131],"effect.":[134],"applicable":[138],"multi-frequency":[140],"circuits.":[141]},"counts_by_year":[{"year":2022,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}