{"id":"https://openalex.org/W2982656416","doi":"https://doi.org/10.1109/ewdts.2019.8884443","title":"A Technique for Semiconductor Devices Modeling Using Physical Templates","display_name":"A Technique for Semiconductor Devices Modeling Using Physical Templates","publication_year":2019,"publication_date":"2019-09-01","ids":{"openalex":"https://openalex.org/W2982656416","doi":"https://doi.org/10.1109/ewdts.2019.8884443","mag":"2982656416"},"language":"en","primary_location":{"id":"doi:10.1109/ewdts.2019.8884443","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ewdts.2019.8884443","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE East-West Design & Test Symposium (EWDTS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5085412914","display_name":"Alexandr M. Pilipenko","orcid":"https://orcid.org/0000-0003-1718-1760"},"institutions":[{"id":"https://openalex.org/I137534880","display_name":"Southern Federal University","ror":"https://ror.org/01tv9ph92","country_code":"RU","type":"education","lineage":["https://openalex.org/I137534880"]}],"countries":["RU"],"is_corresponding":true,"raw_author_name":"Alexandr M. Pilipenko","raw_affiliation_strings":["Department of Fundamentals of Radio Engineering, Southern Federal University, Taganrog, Russia"],"affiliations":[{"raw_affiliation_string":"Department of Fundamentals of Radio Engineering, Southern Federal University, Taganrog, Russia","institution_ids":["https://openalex.org/I137534880"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009518667","display_name":"Vadim N. Biryukov","orcid":"https://orcid.org/0000-0001-5008-0801"},"institutions":[{"id":"https://openalex.org/I137534880","display_name":"Southern Federal University","ror":"https://ror.org/01tv9ph92","country_code":"RU","type":"education","lineage":["https://openalex.org/I137534880"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"Vadim N. Biryukov","raw_affiliation_strings":["Department of Fundamentals of Radio Engineering, Southern Federal University, Taganrog, Russia"],"affiliations":[{"raw_affiliation_string":"Department of Fundamentals of Radio Engineering, Southern Federal University, Taganrog, Russia","institution_ids":["https://openalex.org/I137534880"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5004901225","display_name":"A. I. Serebryakov","orcid":null},"institutions":[{"id":"https://openalex.org/I4210109776","display_name":"Research and Production Complex Technological Centre","ror":"https://ror.org/01pq8wx80","country_code":"RU","type":"facility","lineage":["https://openalex.org/I4210109776"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"Alexander I. Serebryakov","raw_affiliation_strings":["JSC \u201cMilandr\u201d, Zelenograd, Russia","JSC \"Milandr\", Zelenograd, Russia"],"affiliations":[{"raw_affiliation_string":"JSC \u201cMilandr\u201d, Zelenograd, Russia","institution_ids":["https://openalex.org/I4210109776"]},{"raw_affiliation_string":"JSC \"Milandr\", Zelenograd, Russia","institution_ids":["https://openalex.org/I4210109776"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5085412914"],"corresponding_institution_ids":["https://openalex.org/I137534880"],"apc_list":null,"apc_paid":null,"fwci":0.2385,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.56083875,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.9351999759674072,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.9351999759674072,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9164000153541565,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/template","display_name":"Template","score":0.755652666091919},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6601817607879639},{"id":"https://openalex.org/keywords/parametric-statistics","display_name":"Parametric statistics","score":0.5891894698143005},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.5322843194007874},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.49403148889541626},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.47910693287849426},{"id":"https://openalex.org/keywords/parametric-model","display_name":"Parametric model","score":0.47371476888656616},{"id":"https://openalex.org/keywords/semiconductor-device","display_name":"Semiconductor device","score":0.4680445194244385},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.44405901432037354},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.4230094254016876},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.38475751876831055},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.23574993014335632},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.20721423625946045},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.11146578192710876},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.10110220313072205}],"concepts":[{"id":"https://openalex.org/C82714645","wikidata":"https://www.wikidata.org/wiki/Q438331","display_name":"Template","level":2,"score":0.755652666091919},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6601817607879639},{"id":"https://openalex.org/C117251300","wikidata":"https://www.wikidata.org/wiki/Q1849855","display_name":"Parametric statistics","level":2,"score":0.5891894698143005},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.5322843194007874},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.49403148889541626},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.47910693287849426},{"id":"https://openalex.org/C24574437","wikidata":"https://www.wikidata.org/wiki/Q7135228","display_name":"Parametric model","level":3,"score":0.47371476888656616},{"id":"https://openalex.org/C79635011","wikidata":"https://www.wikidata.org/wiki/Q175805","display_name":"Semiconductor device","level":3,"score":0.4680445194244385},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.44405901432037354},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.4230094254016876},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.38475751876831055},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.23574993014335632},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.20721423625946045},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.11146578192710876},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.10110220313072205},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C105795698","wikidata":"https://www.wikidata.org/wiki/Q12483","display_name":"Statistics","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/ewdts.2019.8884443","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ewdts.2019.8884443","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE East-West Design & Test Symposium (EWDTS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.6200000047683716,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W136812135","https://openalex.org/W1592834859","https://openalex.org/W1651707596","https://openalex.org/W1967966967","https://openalex.org/W2052835970","https://openalex.org/W2069546269","https://openalex.org/W2078140934","https://openalex.org/W2083103199","https://openalex.org/W2087218856","https://openalex.org/W2102560486","https://openalex.org/W2144844677","https://openalex.org/W2158769106","https://openalex.org/W2281827858","https://openalex.org/W2434666730","https://openalex.org/W2436728786","https://openalex.org/W2744960281","https://openalex.org/W2918752448","https://openalex.org/W4297975185"],"related_works":["https://openalex.org/W1561862401","https://openalex.org/W1925242245","https://openalex.org/W626773769","https://openalex.org/W2279113928","https://openalex.org/W1966044023","https://openalex.org/W2038830755","https://openalex.org/W2075791734","https://openalex.org/W1970722035","https://openalex.org/W810115978","https://openalex.org/W2093727429"],"abstract_inverted_index":{"A":[0],"technique":[1,19],"of":[2,26,49,54,63,66,74,84,94,100,138,141,145],"template":[3,40,76,88,105,133],"models":[4,134],"creation":[5,42],"for":[6,22,123],"semiconductor":[7,146],"devices":[8,147],"(diodes":[9],"and":[10,35],"field-effect":[11],"transistors)":[12],"is":[13,20,43,78,107],"developed":[14],"in":[15,32,103,151],"this":[16],"paper.":[17],"This":[18],"necessary":[21],"solving":[23],"the":[24,47,55,61,75,82,95,104,131,136,139,154],"problems":[25],"analog":[27],"electronic":[28],"circuits":[29],"computer-aided":[30],"design":[31],"robotic":[33],"systems":[34],"space":[36],"instrument":[37],"engineering.":[38],"The":[39,71,87,98,126],"model":[41,58,77,89,106],"carried":[44,79],"out":[45,80],"by":[46,60,81],"replacement":[48],"one":[50],"or":[51,69],"more":[52,110,148],"parameters":[53,93,102],"known":[56,155],"physical":[57,92,156],"(template)":[59],"relations":[62],"power":[64],"series":[65],"control":[67],"currents":[68],"voltages.":[70],"parametric":[72,124],"identification":[73],"method":[83],"least":[85],"squares.":[86],"comprises":[90],"all":[91],"initial":[96],"model.":[97],"number":[99],"additional":[101],"small":[108],"(no":[109],"than":[111,149],"four),":[112],"which":[113],"makes":[114],"it":[115],"possible":[116],"to":[117],"use":[118],"standard":[119],"minimum":[120],"search":[121],"algorithms":[122],"identification.":[125],"obtained":[127],"results":[128],"show":[129],"that":[130],"proposed":[132],"provide":[135],"increase":[137],"accuracy":[140],"modeling":[142],"I-V":[143],"characteristics":[144],"twice":[150],"comparison":[152],"with":[153],"models.":[157]},"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}