{"id":"https://openalex.org/W2034359272","doi":"https://doi.org/10.1109/eurocon.2013.6625232","title":"A macro-modeling approach for through silicon via","display_name":"A macro-modeling approach for through silicon via","publication_year":2013,"publication_date":"2013-07-01","ids":{"openalex":"https://openalex.org/W2034359272","doi":"https://doi.org/10.1109/eurocon.2013.6625232","mag":"2034359272"},"language":"en","primary_location":{"id":"doi:10.1109/eurocon.2013.6625232","is_oa":false,"landing_page_url":"https://doi.org/10.1109/eurocon.2013.6625232","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Eurocon 2013","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5028133110","display_name":"Khaled Salah","orcid":"https://orcid.org/0000-0002-2310-2558"},"institutions":[{"id":"https://openalex.org/I105695857","display_name":"Siemens (Hungary)","ror":"https://ror.org/01rk7mv85","country_code":"HU","type":"company","lineage":["https://openalex.org/I105695857","https://openalex.org/I1325886976"]}],"countries":["HU"],"is_corresponding":false,"raw_author_name":"Khaled Salah","raw_affiliation_strings":["Mentor Graphics Corporation, Cairo, Egypt","Mentor Graphics,Cairo,Egypt"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Mentor Graphics Corporation, Cairo, Egypt","institution_ids":[]},{"raw_affiliation_string":"Mentor Graphics,Cairo,Egypt","institution_ids":["https://openalex.org/I105695857"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087597892","display_name":"Hani Ragai","orcid":"https://orcid.org/0000-0002-7999-8824"},"institutions":[{"id":"https://openalex.org/I107720978","display_name":"Ain Shams University","ror":"https://ror.org/00cb9w016","country_code":"EG","type":"education","lineage":["https://openalex.org/I107720978"]}],"countries":["EG"],"is_corresponding":false,"raw_author_name":"Hani Ragai","raw_affiliation_strings":["Ain Shams University, Cairo, Egypt","Ain Shams University Cairo Egypt"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Ain Shams University, Cairo, Egypt","institution_ids":["https://openalex.org/I107720978"]},{"raw_affiliation_string":"Ain Shams University Cairo Egypt","institution_ids":["https://openalex.org/I107720978"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5084980840","display_name":"Yehea Ismail","orcid":"https://orcid.org/0000-0003-3956-7533"},"institutions":[{"id":"https://openalex.org/I80693520","display_name":"American University in Cairo","ror":"https://ror.org/0176yqn58","country_code":"EG","type":"education","lineage":["https://openalex.org/I80693520"]}],"countries":["EG"],"is_corresponding":false,"raw_author_name":"Yehea Ismail","raw_affiliation_strings":["American University in Cairo, Cairo, Egypt","AUC Univ., Cairo, Egypt"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"American University in Cairo, Cairo, Egypt","institution_ids":["https://openalex.org/I80693520"]},{"raw_affiliation_string":"AUC Univ., Cairo, Egypt","institution_ids":["https://openalex.org/I80693520"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1869","last_page":"1872"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10460","display_name":"Electronic Packaging and Soldering Technologies","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.8409274220466614},{"id":"https://openalex.org/keywords/through-silicon-via","display_name":"Through-silicon via","score":0.7983756065368652},{"id":"https://openalex.org/keywords/solver","display_name":"Solver","score":0.6420842409133911},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5919973850250244},{"id":"https://openalex.org/keywords/parasitic-capacitance","display_name":"Parasitic capacitance","score":0.5719634294509888},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5282743573188782},{"id":"https://openalex.org/keywords/macro","display_name":"Macro","score":0.5206486582756042},{"id":"https://openalex.org/keywords/coupling","display_name":"Coupling (piping)","score":0.5014150142669678},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.49214810132980347},{"id":"https://openalex.org/keywords/signal-integrity","display_name":"Signal integrity","score":0.48621049523353577},{"id":"https://openalex.org/keywords/power-integrity","display_name":"Power integrity","score":0.4766155779361725},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.47410231828689575},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.44890493154525757},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.39223453402519226},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.34490767121315},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.27370747923851013},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.232707679271698},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.16489198803901672},{"id":"https://openalex.org/keywords/interconnection","display_name":"Interconnection","score":0.12420681118965149},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.12060633301734924},{"id":"https://openalex.org/keywords/mechanical-engineering","display_name":"Mechanical engineering","score":0.09248599410057068},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.07995650172233582}],"concepts":[{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.8409274220466614},{"id":"https://openalex.org/C45632049","wikidata":"https://www.wikidata.org/wiki/Q1578120","display_name":"Through-silicon via","level":3,"score":0.7983756065368652},{"id":"https://openalex.org/C2778770139","wikidata":"https://www.wikidata.org/wiki/Q1966904","display_name":"Solver","level":2,"score":0.6420842409133911},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5919973850250244},{"id":"https://openalex.org/C154318817","wikidata":"https://www.wikidata.org/wiki/Q2157249","display_name":"Parasitic capacitance","level":4,"score":0.5719634294509888},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5282743573188782},{"id":"https://openalex.org/C166955791","wikidata":"https://www.wikidata.org/wiki/Q629579","display_name":"Macro","level":2,"score":0.5206486582756042},{"id":"https://openalex.org/C131584629","wikidata":"https://www.wikidata.org/wiki/Q4308705","display_name":"Coupling (piping)","level":2,"score":0.5014150142669678},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.49214810132980347},{"id":"https://openalex.org/C44938667","wikidata":"https://www.wikidata.org/wiki/Q4503810","display_name":"Signal integrity","level":3,"score":0.48621049523353577},{"id":"https://openalex.org/C2777561913","wikidata":"https://www.wikidata.org/wiki/Q19599527","display_name":"Power integrity","level":4,"score":0.4766155779361725},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.47410231828689575},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.44890493154525757},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.39223453402519226},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.34490767121315},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.27370747923851013},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.232707679271698},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.16489198803901672},{"id":"https://openalex.org/C123745756","wikidata":"https://www.wikidata.org/wiki/Q1665949","display_name":"Interconnection","level":2,"score":0.12420681118965149},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.12060633301734924},{"id":"https://openalex.org/C78519656","wikidata":"https://www.wikidata.org/wiki/Q101333","display_name":"Mechanical engineering","level":1,"score":0.09248599410057068},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.07995650172233582},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/eurocon.2013.6625232","is_oa":false,"landing_page_url":"https://doi.org/10.1109/eurocon.2013.6625232","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Eurocon 2013","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8500000238418579,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W69224954","https://openalex.org/W1547010802","https://openalex.org/W1978300964","https://openalex.org/W2005220526","https://openalex.org/W2125082141","https://openalex.org/W2139109474","https://openalex.org/W2144149750","https://openalex.org/W2169694447","https://openalex.org/W2542729054","https://openalex.org/W3143145701","https://openalex.org/W6632880744"],"related_works":["https://openalex.org/W2965410099","https://openalex.org/W4235454973","https://openalex.org/W4386105410","https://openalex.org/W2250058922","https://openalex.org/W1987899475","https://openalex.org/W2148913576","https://openalex.org/W3097351224","https://openalex.org/W4250319866","https://openalex.org/W2385649681","https://openalex.org/W4312198714"],"abstract_inverted_index":{"Modeling":[0],"parasitic":[1,71],"parameters":[2],"of":[3,21,37,47],"Through-Silicon":[4],"Via":[5],"(TSV)":[6],"structures":[7],"is":[8,65,73],"essential":[9],"in":[10,25,85],"exploring":[11],"electrical":[12],"characteristics":[13],"such":[14],"as":[15,59],"delay":[16],"and":[17,23,42],"signal":[18],"integrity":[19],"(SI)":[20],"circuits":[22],"interconnections":[24],"three-dimensional":[26],"(3D)":[27],"Integrated":[28],"Circuits":[29],"(ICs).":[30],"This":[31],"paper":[32],"presents":[33],"a":[34,62],"complete":[35],"set":[36],"self-consistent":[38],"equations":[39],"including":[40],"self":[41],"coupling":[43],"terms":[44],"for":[45,94],"capacitance":[46,72],"general":[48],"multi-TSV":[49],"structures.":[50],"The":[51],"error":[52],"when":[53],"using":[54],"the":[55],"closed":[56],"form":[57],"expressions":[58],"compared":[60],"to":[61],"field":[63],"solver":[64],"less":[66,74],"than":[67,75],"7%.":[68],"As":[69],"TSV":[70,82],"other":[76],"conventional":[77],"IO":[78],"structures'":[79],"capacitance,":[80],"therefore":[81],"technology":[83],"results":[84],"lower":[86],"I/O":[87],"power":[88,96],"consumption,":[89],"which":[90],"makes":[91],"it":[92],"suitable":[93],"low":[95],"applications.":[97]},"counts_by_year":[{"year":2015,"cited_by_count":2}],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}