{"id":"https://openalex.org/W2483219452","doi":"https://doi.org/10.1109/ets.2016.7519324","title":"Failure mechanisms and test methods for the SRAM TVC write-assist technique","display_name":"Failure mechanisms and test methods for the SRAM TVC write-assist technique","publication_year":2016,"publication_date":"2016-05-01","ids":{"openalex":"https://openalex.org/W2483219452","doi":"https://doi.org/10.1109/ets.2016.7519324","mag":"2483219452"},"language":"en","primary_location":{"id":"doi:10.1109/ets.2016.7519324","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ets.2016.7519324","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 21th IEEE European Test Symposium (ETS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5067545661","display_name":"Josef Kinseher","orcid":"https://orcid.org/0000-0001-6923-1059"},"institutions":[{"id":"https://openalex.org/I186354981","display_name":"University of Passau","ror":"https://ror.org/05ydjnb78","country_code":"DE","type":"education","lineage":["https://openalex.org/I186354981"]},{"id":"https://openalex.org/I4210094487","display_name":"Intel (Germany)","ror":"https://ror.org/00m2x0g47","country_code":"DE","type":"company","lineage":["https://openalex.org/I1343180700","https://openalex.org/I4210094487"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Josef Kinseher","raw_affiliation_strings":["Intel Mobile Communications, Neubiberg, Germany","University of Passau, Passau, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Intel Mobile Communications, Neubiberg, Germany","institution_ids":["https://openalex.org/I4210094487"]},{"raw_affiliation_string":"University of Passau, Passau, Germany","institution_ids":["https://openalex.org/I186354981"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027782846","display_name":"Moritz V\u00f6lker","orcid":null},"institutions":[{"id":"https://openalex.org/I4210094487","display_name":"Intel (Germany)","ror":"https://ror.org/00m2x0g47","country_code":"DE","type":"company","lineage":["https://openalex.org/I1343180700","https://openalex.org/I4210094487"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Moritz Volker","raw_affiliation_strings":["Intel Mobile Communications, Neubiberg, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Intel Mobile Communications, Neubiberg, Germany","institution_ids":["https://openalex.org/I4210094487"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000960055","display_name":"Leonardo B. Zordan","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Leonardo B. Zordan","raw_affiliation_strings":["Intel Mobile Communications, Sophia-Antipolis, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Intel Mobile Communications, Sophia-Antipolis, France","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5027416202","display_name":"Ilia Polian","orcid":"https://orcid.org/0000-0002-6563-2725"},"institutions":[{"id":"https://openalex.org/I186354981","display_name":"University of Passau","ror":"https://ror.org/05ydjnb78","country_code":"DE","type":"education","lineage":["https://openalex.org/I186354981"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Ilia Polian","raw_affiliation_strings":["University of Passau, Passau, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Passau, Passau, Germany","institution_ids":["https://openalex.org/I186354981"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.8577643632888794},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.601323127746582},{"id":"https://openalex.org/keywords/resistive-touchscreen","display_name":"Resistive touchscreen","score":0.5930036306381226},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.5201871395111084},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.48665958642959595},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4754497706890106},{"id":"https://openalex.org/keywords/vulnerability","display_name":"Vulnerability (computing)","score":0.4730994701385498},{"id":"https://openalex.org/keywords/test-method","display_name":"Test method","score":0.4114459156990051},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.38369452953338623},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3610668182373047},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.23233875632286072},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.10113987326622009}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.8577643632888794},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.601323127746582},{"id":"https://openalex.org/C6899612","wikidata":"https://www.wikidata.org/wiki/Q852911","display_name":"Resistive touchscreen","level":2,"score":0.5930036306381226},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.5201871395111084},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.48665958642959595},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4754497706890106},{"id":"https://openalex.org/C95713431","wikidata":"https://www.wikidata.org/wiki/Q631425","display_name":"Vulnerability (computing)","level":2,"score":0.4730994701385498},{"id":"https://openalex.org/C132519959","wikidata":"https://www.wikidata.org/wiki/Q3077373","display_name":"Test method","level":2,"score":0.4114459156990051},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.38369452953338623},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3610668182373047},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.23233875632286072},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.10113987326622009},{"id":"https://openalex.org/C38652104","wikidata":"https://www.wikidata.org/wiki/Q3510521","display_name":"Computer security","level":1,"score":0.0},{"id":"https://openalex.org/C105795698","wikidata":"https://www.wikidata.org/wiki/Q12483","display_name":"Statistics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/ets.2016.7519324","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ets.2016.7519324","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 21th IEEE European Test Symposium (ETS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W2014357578","https://openalex.org/W2148301792","https://openalex.org/W2156716091"],"related_works":["https://openalex.org/W3151633427","https://openalex.org/W2212894501","https://openalex.org/W2793465010","https://openalex.org/W3024050170","https://openalex.org/W4293253840","https://openalex.org/W4378977321","https://openalex.org/W1976168335","https://openalex.org/W4308090481","https://openalex.org/W3211992815","https://openalex.org/W179354024"],"abstract_inverted_index":{"The":[0],"transient":[1],"voltage":[2,81],"collapse":[3,82],"(TVC)":[4],"write-assist":[5],"technique":[6,48],"has":[7],"emerged":[8],"as":[9,31],"a":[10,50,71,88],"powerful":[11],"method":[12],"to":[13,29,38,87],"enable":[14],"low-voltage":[15],"SRAM":[16,73],"operation.":[17],"However,":[18],"it":[19],"comes":[20],"at":[21],"the":[22,32,46,57,63,68,79],"expense":[23],"of":[24,53,59,70],"higher":[25],"complexity":[26],"and":[27,66],"vulnerability":[28],"errors":[30],"additional":[33],"peripheral":[34],"circuitry":[35,65],"is":[36,84,100],"exposed":[37],"manufacturing":[39],"defects.":[40],"In":[41],"this":[42],"work,":[43],"we":[44],"analyze":[45],"TVC":[47,64],"from":[49],"testing":[51],"point":[52],"view.":[54],"We":[55],"study":[56],"effects":[58],"resistive-open":[60],"defects":[61,99],"inside":[62],"report":[67],"presence":[69],"novel":[72],"failure":[74],"mechanism":[75],"which":[76],"occurs":[77],"when":[78],"maximum":[80],"level":[83],"not":[85],"clamped":[86],"fixed":[89],"value.":[90],"Finally,":[91],"an":[92],"efficient":[93],"March":[94],"test":[95],"solution":[96],"detecting":[97],"these":[98],"presented.":[101]},"counts_by_year":[{"year":2019,"cited_by_count":1}],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}