{"id":"https://openalex.org/W1606377465","doi":"https://doi.org/10.1109/ets.2015.7138747","title":"On resistive open defect detection in DRAMs: The charge accumulation effect","display_name":"On resistive open defect detection in DRAMs: The charge accumulation effect","publication_year":2015,"publication_date":"2015-05-01","ids":{"openalex":"https://openalex.org/W1606377465","doi":"https://doi.org/10.1109/ets.2015.7138747","mag":"1606377465"},"language":"en","primary_location":{"id":"doi:10.1109/ets.2015.7138747","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ets.2015.7138747","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 20th IEEE European Test Symposium (ETS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5025952927","display_name":"Yiorgos Sfikas","orcid":null},"institutions":[{"id":"https://openalex.org/I194019607","display_name":"University of Ioannina","ror":"https://ror.org/01qg3j183","country_code":"GR","type":"education","lineage":["https://openalex.org/I194019607"]}],"countries":["GR"],"is_corresponding":false,"raw_author_name":"Yiorgos Sfikas","raw_affiliation_strings":["Dept. of Computer Science and Engineering, University of Ioannina, Ioannina, Greece"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Computer Science and Engineering, University of Ioannina, Ioannina, Greece","institution_ids":["https://openalex.org/I194019607"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036684985","display_name":"Yiorgos Tsiatouhas","orcid":"https://orcid.org/0000-0001-8408-6929"},"institutions":[{"id":"https://openalex.org/I194019607","display_name":"University of Ioannina","ror":"https://ror.org/01qg3j183","country_code":"GR","type":"education","lineage":["https://openalex.org/I194019607"]}],"countries":["GR"],"is_corresponding":false,"raw_author_name":"Yiorgos Tsiatouhas","raw_affiliation_strings":["Panepistimio Ioanninon, Ioannina, GR"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Panepistimio Ioanninon, Ioannina, GR","institution_ids":["https://openalex.org/I194019607"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042250419","display_name":"Mottaqiallah Taouil","orcid":"https://orcid.org/0000-0002-9911-4846"},"institutions":[{"id":"https://openalex.org/I98358874","display_name":"Delft University of Technology","ror":"https://ror.org/02e2c7k09","country_code":"NL","type":"education","lineage":["https://openalex.org/I98358874"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"Mottaqiallah Taouil","raw_affiliation_strings":["Computer Engineering Laboratory Delft University of Technology, Delft, CD, The Netherlands"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Computer Engineering Laboratory Delft University of Technology, Delft, CD, The Netherlands","institution_ids":["https://openalex.org/I98358874"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5005739146","display_name":"Said Hamdioui","orcid":"https://orcid.org/0000-0002-8961-0387"},"institutions":[{"id":"https://openalex.org/I98358874","display_name":"Delft University of Technology","ror":"https://ror.org/02e2c7k09","country_code":"NL","type":"education","lineage":["https://openalex.org/I98358874"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"Said Hamdioui","raw_affiliation_strings":["Computer Engineering Laboratory Delft University of Technology, Delft, CD, The Netherlands"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Computer Engineering Laboratory Delft University of Technology, Delft, CD, The Netherlands","institution_ids":["https://openalex.org/I98358874"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.03535001,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.9592104554176331},{"id":"https://openalex.org/keywords/resistive-touchscreen","display_name":"Resistive touchscreen","score":0.8301240801811218},{"id":"https://openalex.org/keywords/charge","display_name":"Charge (physics)","score":0.642758846282959},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.46170762181282043},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4155166745185852},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.36735671758651733},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.35425591468811035},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3150743544101715},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.23556816577911377},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.20197567343711853}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.9592104554176331},{"id":"https://openalex.org/C6899612","wikidata":"https://www.wikidata.org/wiki/Q852911","display_name":"Resistive touchscreen","level":2,"score":0.8301240801811218},{"id":"https://openalex.org/C188082385","wikidata":"https://www.wikidata.org/wiki/Q73792","display_name":"Charge (physics)","level":2,"score":0.642758846282959},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.46170762181282043},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4155166745185852},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.36735671758651733},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.35425591468811035},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3150743544101715},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.23556816577911377},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.20197567343711853},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/ets.2015.7138747","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ets.2015.7138747","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 20th IEEE European Test Symposium (ETS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320321038","display_name":"Fonds National de la Recherche Luxembourg","ror":"https://ror.org/039z13y21"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1604482631","https://openalex.org/W2098355397","https://openalex.org/W2106060433","https://openalex.org/W2114773166","https://openalex.org/W2126771492","https://openalex.org/W2129393873","https://openalex.org/W2139728303","https://openalex.org/W2143429170","https://openalex.org/W4240958371"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W3120961607","https://openalex.org/W4401568740","https://openalex.org/W3148568549","https://openalex.org/W2098207691","https://openalex.org/W1648516568","https://openalex.org/W361036515","https://openalex.org/W2161286015","https://openalex.org/W2269474412","https://openalex.org/W4211178602"],"abstract_inverted_index":{"The":[0],"test":[1,115],"complexity":[2],"of":[3,16,80,99],"high":[4],"density":[5],"DRAMs":[6],"increases":[7],"with":[8],"technology":[9],"evolution,":[10],"due":[11],"to":[12,28,85,95],"a":[13,30,68,73,78],"larger":[14],"impact":[15],"process":[17],"variation":[18],"and":[19,37,127],"weak":[20,69],"defects.":[21],"In":[22],"particular,":[23],"resistive":[24,66,100,119],"open":[25,101,120],"defects":[26],"turn":[27],"be":[29],"major":[31],"concern":[32],"in":[33,53,59],"DRAMs.":[34],"Our":[35],"analysis":[36],"simulation":[38],"results":[39],"show":[40],"that":[41,62,117],"an":[42,113],"important":[43],"phenomenon":[44],"exists,":[45],"charge":[46,108,129],"accumulation,":[47],"which":[48],"is":[49,75,83],"currently":[50],"not":[51,106],"considered":[52],"DRAM":[54,60,88],"testing.":[55],"Charge":[56],"accumulation":[57,130],"occurs":[58],"cells":[61],"suffer":[63],"from":[64],"internal":[65],"opens;":[67],"value":[70],"stored":[71],"at":[72],"cell":[74],"strengthened":[76],"when":[77],"sequence":[79],"read":[81],"operations":[82],"applied":[84],"it.":[86],"Typical":[87],"testing":[89],"procedures":[90],"(like":[91],"March":[92],"tests)":[93],"fail":[94],"provide":[96],"enhanced":[97],"coverage":[98],"defects,":[102,121],"since":[103],"they":[104],"do":[105],"consider":[107],"accumulation.":[109],"This":[110],"paper":[111],"provides":[112],"effective":[114],"algorithm":[116],"targets":[118],"while":[122],"considering":[123],"the":[124,128],"bit-line":[125],"imbalance":[126],"mechanisms.":[131]},"counts_by_year":[],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}