{"id":"https://openalex.org/W4387251365","doi":"https://doi.org/10.1109/essderc59256.2023.10268479","title":"New Insights into Read Current Margin and Memory Window of HfO<sub>2</sub>-based Ferroelectric FET with Re-exploration of the Role of Ferroelectric Dynamics and Interface Charges during Readout","display_name":"New Insights into Read Current Margin and Memory Window of HfO<sub>2</sub>-based Ferroelectric FET with Re-exploration of the Role of Ferroelectric Dynamics and Interface Charges during Readout","publication_year":2023,"publication_date":"2023-09-11","ids":{"openalex":"https://openalex.org/W4387251365","doi":"https://doi.org/10.1109/essderc59256.2023.10268479"},"language":"en","primary_location":{"id":"doi:10.1109/essderc59256.2023.10268479","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/essderc59256.2023.10268479","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5070519663","display_name":"Chang Su","orcid":"https://orcid.org/0000-0001-5053-7605"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Chang Su","raw_affiliation_strings":["Peking University,School of Integrated Circuits,Beijing,China,100871"],"affiliations":[{"raw_affiliation_string":"Peking University,School of Integrated Circuits,Beijing,China,100871","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103201540","display_name":"Zhongxin Liang","orcid":"https://orcid.org/0000-0003-2973-4916"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhongxin Liang","raw_affiliation_strings":["Peking University,School of Integrated Circuits,Beijing,China,100871"],"affiliations":[{"raw_affiliation_string":"Peking University,School of Integrated Circuits,Beijing,China,100871","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5034535637","display_name":"Zhiyuan Fu","orcid":"https://orcid.org/0000-0003-3656-3414"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhiyuan Fu","raw_affiliation_strings":["Peking University,School of Integrated Circuits,Beijing,China,100871"],"affiliations":[{"raw_affiliation_string":"Peking University,School of Integrated Circuits,Beijing,China,100871","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071552599","display_name":"Shaodi Xu","orcid":null},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shaodi Xu","raw_affiliation_strings":["Peking University,School of Integrated Circuits,Beijing,China,100871"],"affiliations":[{"raw_affiliation_string":"Peking University,School of Integrated Circuits,Beijing,China,100871","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100648001","display_name":"Kaifeng Wang","orcid":"https://orcid.org/0000-0002-5076-8304"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Kaifeng Wang","raw_affiliation_strings":["Peking University,School of Integrated Circuits,Beijing,China,100871"],"affiliations":[{"raw_affiliation_string":"Peking University,School of Integrated Circuits,Beijing,China,100871","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074829512","display_name":"Puyang Cai","orcid":"https://orcid.org/0000-0002-4534-3336"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Puyang Cai","raw_affiliation_strings":["Peking University,School of Integrated Circuits,Beijing,China,100871"],"affiliations":[{"raw_affiliation_string":"Peking University,School of Integrated Circuits,Beijing,China,100871","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100334597","display_name":"Liang Chen","orcid":"https://orcid.org/0000-0002-2476-1440"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Liang Chen","raw_affiliation_strings":["Peking University,School of Integrated Circuits,Beijing,China,100871"],"affiliations":[{"raw_affiliation_string":"Peking University,School of Integrated Circuits,Beijing,China,100871","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062886480","display_name":"Ru Huang","orcid":"https://orcid.org/0000-0002-8146-4821"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]},{"id":"https://openalex.org/I4210165198","display_name":"Beijing Advanced Sciences and Innovation Center","ror":"https://ror.org/05qm21180","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165198"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ru Huang","raw_affiliation_strings":["Peking University,School of Integrated Circuits,Beijing,China,100871","Beijing Advanced Innovation Center for Integrated Circuits, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Peking University,School of Integrated Circuits,Beijing,China,100871","institution_ids":["https://openalex.org/I20231570"]},{"raw_affiliation_string":"Beijing Advanced Innovation Center for Integrated Circuits, Beijing, China","institution_ids":["https://openalex.org/I4210165198"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5017373294","display_name":"Qianqian Huang","orcid":"https://orcid.org/0000-0002-3714-8581"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]},{"id":"https://openalex.org/I4210165198","display_name":"Beijing Advanced Sciences and Innovation Center","ror":"https://ror.org/05qm21180","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165198"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Qianqian Huang","raw_affiliation_strings":["Peking University,School of Integrated Circuits,Beijing,China,100871","Beijing Superstring Academy of Memory Technology, Beijing, China","Beijing Advanced Innovation Center for Integrated Circuits, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Peking University,School of Integrated Circuits,Beijing,China,100871","institution_ids":["https://openalex.org/I20231570"]},{"raw_affiliation_string":"Beijing Superstring Academy of Memory Technology, Beijing, China","institution_ids":[]},{"raw_affiliation_string":"Beijing Advanced Innovation Center for Integrated Circuits, Beijing, China","institution_ids":["https://openalex.org/I4210165198"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":9,"corresponding_author_ids":["https://openalex.org/A5070519663"],"corresponding_institution_ids":["https://openalex.org/I20231570"],"apc_list":null,"apc_paid":null,"fwci":0.1337,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.44964542,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"89","last_page":"92"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9929999709129333,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9925000071525574,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.8852962255477905},{"id":"https://openalex.org/keywords/margin","display_name":"Margin (machine learning)","score":0.6092156171798706},{"id":"https://openalex.org/keywords/polarization","display_name":"Polarization (electrochemistry)","score":0.6079446077346802},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.5318362712860107},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5029820799827576},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5026233196258545},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.492345929145813},{"id":"https://openalex.org/keywords/interface","display_name":"Interface (matter)","score":0.46927180886268616},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4480496048927307},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4461991786956787},{"id":"https://openalex.org/keywords/current","display_name":"Current (fluid)","score":0.42438799142837524},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3861142694950104},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3689797520637512},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.31091031432151794},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.23138993978500366},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.20769262313842773},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.19707611203193665},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.18664169311523438}],"concepts":[{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.8852962255477905},{"id":"https://openalex.org/C774472","wikidata":"https://www.wikidata.org/wiki/Q6760393","display_name":"Margin (machine learning)","level":2,"score":0.6092156171798706},{"id":"https://openalex.org/C205049153","wikidata":"https://www.wikidata.org/wiki/Q2698605","display_name":"Polarization (electrochemistry)","level":2,"score":0.6079446077346802},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5318362712860107},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5029820799827576},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5026233196258545},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.492345929145813},{"id":"https://openalex.org/C113843644","wikidata":"https://www.wikidata.org/wiki/Q901882","display_name":"Interface (matter)","level":4,"score":0.46927180886268616},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4480496048927307},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4461991786956787},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.42438799142837524},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3861142694950104},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3689797520637512},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.31091031432151794},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.23138993978500366},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.20769262313842773},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19707611203193665},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.18664169311523438},{"id":"https://openalex.org/C196806460","wikidata":"https://www.wikidata.org/wiki/Q188603","display_name":"Capillary action","level":2,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C28413391","wikidata":"https://www.wikidata.org/wiki/Q785542","display_name":"Capillary number","level":3,"score":0.0},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc59256.2023.10268479","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/essderc59256.2023.10268479","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.5,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W1595708959","https://openalex.org/W1983604260","https://openalex.org/W2133256815","https://openalex.org/W2786159202","https://openalex.org/W2899077824","https://openalex.org/W3005761635","https://openalex.org/W3095256020","https://openalex.org/W3108325618","https://openalex.org/W3136740204","https://openalex.org/W3186271703","https://openalex.org/W4207067285","https://openalex.org/W4226254415","https://openalex.org/W4308243208"],"related_works":["https://openalex.org/W2795319754","https://openalex.org/W2248971758","https://openalex.org/W2332612935","https://openalex.org/W2410108108","https://openalex.org/W3125011624","https://openalex.org/W2129539607","https://openalex.org/W1996780177","https://openalex.org/W2910697626","https://openalex.org/W2166508075","https://openalex.org/W4376612721"],"abstract_inverted_index":{"The":[0],"read":[1,31,40,50,119,129],"current":[2,51,120],"margin":[3,52],"and":[4,26,39,49,80,118,131,142],"memory":[5],"window":[6],"(MW)":[7],"of":[8,22,47,61,74,93,145],"HfO<inf":[9],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[10],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</inf>-based":[11],"ferroelectric":[12,24],"FET":[13],"(FeFET)":[14],"are":[15,149],"comprehensively":[16],"re-evaluated":[17],"by":[18,66],"considering":[19],"the":[20,23,30,45,59,98,108,135,139],"impacts":[21],"dynamics":[25],"interface":[27,78],"charges":[28],"during":[29],"operation.":[32],"It":[33],"is":[34,97],"found":[35],"that":[36],"readout":[37],"methods":[38],"time":[41,130],"can":[42,83],"significantly":[43],"influence":[44],"evaluation":[46,64],"MW":[48,63,73,117],"due":[53],"to":[54,87,125],"polarization":[55],"switching":[56],"dynamics,":[57],"revealing":[58],"limitation":[60],"prevailing":[62],"method":[65],"pulsed":[67],"IV.":[68],"Moreover,":[69],"when":[70],"fast":[71],"readout,":[72],"FeFET":[75,146],"with":[76,147],"optimized":[77],"traps":[79],"interlayer":[81],"capacitance":[82],"be":[84,88],"theoretically":[85],"potential":[86],"higher":[89],"than":[90],"2":[91],"times":[92],"coercive":[94],"voltage":[95],"which":[96],"theoretical":[99],"maximum":[100],"value":[101],"for":[102],"quasi-static":[103],"readout.":[104],"For":[105],"practical":[106],"FeFET,":[107],"high":[109],"trapped":[110],"charge":[111],"density":[112],"may":[113],"not":[114],"only":[115],"reduce":[116],"margin,":[121],"but":[122],"also":[123],"lead":[124],"negligible":[126],"dependence":[127],"on":[128,134],"method.":[132],"Based":[133],"comprehensive":[136],"physical":[137],"discussion,":[138],"new":[140],"understanding":[141],"design":[143],"strategies":[144],"high-read-margin":[148],"provided.":[150]},"counts_by_year":[{"year":2024,"cited_by_count":1}],"updated_date":"2025-12-22T23:10:17.713674","created_date":"2025-10-10T00:00:00"}