{"id":"https://openalex.org/W4387250950","doi":"https://doi.org/10.1109/essderc59256.2023.10268477","title":"One-Pulse-Programmable Multi-Level PCM/Selector Cross-Point Memory for 20 nm Half Pitch and Beyond","display_name":"One-Pulse-Programmable Multi-Level PCM/Selector Cross-Point Memory for 20 nm Half Pitch and Beyond","publication_year":2023,"publication_date":"2023-09-11","ids":{"openalex":"https://openalex.org/W4387250950","doi":"https://doi.org/10.1109/essderc59256.2023.10268477"},"language":"en","primary_location":{"id":"doi:10.1109/essderc59256.2023.10268477","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/essderc59256.2023.10268477","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5060629877","display_name":"Yuya Matsuzawa","orcid":null},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Yuya Matsuzawa","raw_affiliation_strings":["Kioxia Corporation,Institute of Memory Technology R&#x0026;D,Yokkaichi,Japan"],"affiliations":[{"raw_affiliation_string":"Kioxia Corporation,Institute of Memory Technology R&#x0026;D,Yokkaichi,Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5072906763","display_name":"Yuki Ohnishi","orcid":"https://orcid.org/0000-0001-6412-7375"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yuki Ohnishi","raw_affiliation_strings":["Kioxia Corporation,Institute of Memory Technology R&#x0026;D,Yokkaichi,Japan"],"affiliations":[{"raw_affiliation_string":"Kioxia Corporation,Institute of Memory Technology R&#x0026;D,Yokkaichi,Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5013988929","display_name":"K. Katono","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Kazuhiro Katono","raw_affiliation_strings":["Kioxia Corporation,Institute of Memory Technology R&#x0026;D,Yokkaichi,Japan"],"affiliations":[{"raw_affiliation_string":"Kioxia Corporation,Institute of Memory Technology R&#x0026;D,Yokkaichi,Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112075730","display_name":"Y. Muto","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yusuke Muto","raw_affiliation_strings":["Kioxia Corporation,Institute of Memory Technology R&#x0026;D,Yokkaichi,Japan"],"affiliations":[{"raw_affiliation_string":"Kioxia Corporation,Institute of Memory Technology R&#x0026;D,Yokkaichi,Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002752342","display_name":"Takayuki Tsukagoshi","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Takayuki Tsukagoshi","raw_affiliation_strings":["Kioxia Corporation,Institute of Memory Technology R&#x0026;D,Yokkaichi,Japan"],"affiliations":[{"raw_affiliation_string":"Kioxia Corporation,Institute of Memory Technology R&#x0026;D,Yokkaichi,Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075079965","display_name":"Hiroki Tokuhira","orcid":"https://orcid.org/0009-0001-2008-2803"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Hiroki Tokuhira","raw_affiliation_strings":["Kioxia Corporation,Institute of Memory Technology R&#x0026;D,Yokkaichi,Japan"],"affiliations":[{"raw_affiliation_string":"Kioxia Corporation,Institute of Memory Technology R&#x0026;D,Yokkaichi,Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049404938","display_name":"Kei Sakamoto","orcid":"https://orcid.org/0000-0001-9225-2392"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Kei Sakamoto","raw_affiliation_strings":["Kioxia Corporation,Institute of Memory Technology R&#x0026;D,Yokkaichi,Japan"],"affiliations":[{"raw_affiliation_string":"Kioxia Corporation,Institute of Memory Technology R&#x0026;D,Yokkaichi,Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102562610","display_name":"Hisakazu Matsumori","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Hisakazu Matsumori","raw_affiliation_strings":["Kioxia Corporation,Institute of Memory Technology R&#x0026;D,Yokkaichi,Japan"],"affiliations":[{"raw_affiliation_string":"Kioxia Corporation,Institute of Memory Technology R&#x0026;D,Yokkaichi,Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5092985009","display_name":"Hiroyuki Ode","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Hiroyuki Ode","raw_affiliation_strings":["Kioxia Corporation,Institute of Memory Technology R&#x0026;D,Yokkaichi,Japan"],"affiliations":[{"raw_affiliation_string":"Kioxia Corporation,Institute of Memory Technology R&#x0026;D,Yokkaichi,Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049630564","display_name":"Shosuke Fujii","orcid":"https://orcid.org/0000-0003-1112-2081"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Shosuke Fujii","raw_affiliation_strings":["Kioxia Corporation,Institute of Memory Technology R&#x0026;D,Yokkaichi,Japan"],"affiliations":[{"raw_affiliation_string":"Kioxia Corporation,Institute of Memory Technology R&#x0026;D,Yokkaichi,Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113882081","display_name":"Hide Tanaka","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Hide Tanaka","raw_affiliation_strings":["Kioxia Corporation,Institute of Memory Technology R&#x0026;D,Yokkaichi,Japan"],"affiliations":[{"raw_affiliation_string":"Kioxia Corporation,Institute of Memory Technology R&#x0026;D,Yokkaichi,Japan","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5065452756","display_name":"T. Fujimaki","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Takeshi Fujimaki","raw_affiliation_strings":["Kioxia Corporation,Institute of Memory Technology R&#x0026;D,Yokkaichi,Japan"],"affiliations":[{"raw_affiliation_string":"Kioxia Corporation,Institute of Memory Technology R&#x0026;D,Yokkaichi,Japan","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":12,"corresponding_author_ids":["https://openalex.org/A5060629877"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.1959,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.41573052,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"25","last_page":"28"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11315","display_name":"Phase-change materials and chalcogenides","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11315","display_name":"Phase-change materials and chalcogenides","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11128","display_name":"Transition Metal Oxide Nanomaterials","score":0.9904999732971191,"subfield":{"id":"https://openalex.org/subfields/2507","display_name":"Polymers and Plastics"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10306","display_name":"Liquid Crystal Research Advancements","score":0.986299991607666,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/initialization","display_name":"Initialization","score":0.7884360551834106},{"id":"https://openalex.org/keywords/phase-change-memory","display_name":"Phase-change memory","score":0.6068891882896423},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5589548349380493},{"id":"https://openalex.org/keywords/latency","display_name":"Latency (audio)","score":0.5129377841949463},{"id":"https://openalex.org/keywords/point","display_name":"Point (geometry)","score":0.4680677652359009},{"id":"https://openalex.org/keywords/thermal","display_name":"Thermal","score":0.451774537563324},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.4182610809803009},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3963063657283783},{"id":"https://openalex.org/keywords/parallel-computing","display_name":"Parallel computing","score":0.39246827363967896},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.3504856824874878},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.18712618947029114},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.1833178699016571},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.1271784007549286},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.1015753448009491}],"concepts":[{"id":"https://openalex.org/C114466953","wikidata":"https://www.wikidata.org/wiki/Q6034165","display_name":"Initialization","level":2,"score":0.7884360551834106},{"id":"https://openalex.org/C64142963","wikidata":"https://www.wikidata.org/wiki/Q1153902","display_name":"Phase-change memory","level":3,"score":0.6068891882896423},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5589548349380493},{"id":"https://openalex.org/C82876162","wikidata":"https://www.wikidata.org/wiki/Q17096504","display_name":"Latency (audio)","level":2,"score":0.5129377841949463},{"id":"https://openalex.org/C28719098","wikidata":"https://www.wikidata.org/wiki/Q44946","display_name":"Point (geometry)","level":2,"score":0.4680677652359009},{"id":"https://openalex.org/C204530211","wikidata":"https://www.wikidata.org/wiki/Q752823","display_name":"Thermal","level":2,"score":0.451774537563324},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.4182610809803009},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3963063657283783},{"id":"https://openalex.org/C173608175","wikidata":"https://www.wikidata.org/wiki/Q232661","display_name":"Parallel computing","level":1,"score":0.39246827363967896},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.3504856824874878},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.18712618947029114},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1833178699016571},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.1271784007549286},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.1015753448009491},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc59256.2023.10268477","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/essderc59256.2023.10268477","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1523213966","https://openalex.org/W1981321271","https://openalex.org/W1993569419","https://openalex.org/W2912478339","https://openalex.org/W2965325434","https://openalex.org/W3108108861","https://openalex.org/W3139165709","https://openalex.org/W4225678992","https://openalex.org/W4317793345","https://openalex.org/W4317793570","https://openalex.org/W4323793902"],"related_works":["https://openalex.org/W3204184292","https://openalex.org/W3176564347","https://openalex.org/W2550153070","https://openalex.org/W2178010602","https://openalex.org/W1983958623","https://openalex.org/W2541696051","https://openalex.org/W2078067390","https://openalex.org/W2110321764","https://openalex.org/W2162174949","https://openalex.org/W4254007354"],"abstract_inverted_index":{"We":[0,39],"demonstrated,":[1],"for":[2,24],"the":[3,22,107],"first":[4],"time,":[5],"a":[6],"multi-level":[7,109],"phase":[8],"change":[9],"memory/selector":[10],"cell":[11],"which":[12,54],"can":[13],"be":[14],"operated":[15],"without":[16,73],"initialization":[17],"or":[18],"iterative":[19],"verify,":[20],"showing":[21],"potential":[23],"future":[25],"cost-effective":[26],"storage-class":[27],"memory":[28,88,97],"applications":[29],"where":[30],"both":[31],"high":[32],"density":[33],"and":[34,43,56,59,77,93,120],"low":[35],"latency":[36],"are":[37],"essential.":[38],"found":[40],"optimal":[41],"thermal":[42],"composition":[44],"design":[45],"enabled":[46],"to":[47],"form":[48],"distinct":[49],"middle":[50],"resistance":[51],"state,":[52],"in":[53,113],"crystalline":[55],"amorphous":[57],"co-exist":[58],"were":[60],"placed":[61],"at":[62],"designed":[63],"positions.":[64],"Multi-level":[65],"programming":[66],"was":[67,79],"achieved":[68],"by":[69],"one":[70],"single":[71],"pulse":[72],"any":[74],"additional":[75],"operation,":[76],"it":[78],"stable":[80],"over":[81],">10<sup":[82],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[83],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">7</sup>":[84],"cycles":[85],"with":[86,99,116],"sufficient":[87],"window.":[89],"Furthermore,":[90],"we":[91],"fabricated":[92],"demonstrated":[94],"PCM/selector":[95],"cross-point":[96,114],"array":[98,115],"half-pitch":[100,119],"of":[101],"20":[102,117],"nm.":[103],"Thermal":[104],"simulation":[105],"showed":[106],"one-pulse":[108],"operation":[110],"is":[111],"feasible":[112],"nm":[118],"beyond.":[121]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":1}],"updated_date":"2025-12-19T19:40:27.379048","created_date":"2025-10-10T00:00:00"}