{"id":"https://openalex.org/W4313134821","doi":"https://doi.org/10.1109/essderc55479.2022.9947196","title":"Spin Torques in ULTRA-Scaled MRAM Devices","display_name":"Spin Torques in ULTRA-Scaled MRAM Devices","publication_year":2022,"publication_date":"2022-09-19","ids":{"openalex":"https://openalex.org/W4313134821","doi":"https://doi.org/10.1109/essderc55479.2022.9947196"},"language":"en","primary_location":{"id":"doi:10.1109/essderc55479.2022.9947196","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc55479.2022.9947196","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5000588580","display_name":"Simone Fiorentini","orcid":"https://orcid.org/0000-0003-2982-7629"},"institutions":[{"id":"https://openalex.org/I145847075","display_name":"TU Wien","ror":"https://ror.org/04d836q62","country_code":"AT","type":"education","lineage":["https://openalex.org/I145847075"]},{"id":"https://openalex.org/I4210105054","display_name":"Christian Doppler Laboratory for Thermoelectricity","ror":"https://ror.org/01cbw5x35","country_code":"AT","type":"facility","lineage":["https://openalex.org/I129774422","https://openalex.org/I145847075","https://openalex.org/I4210105054"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"Simone Fiorentini","raw_affiliation_strings":["Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic at the","Institute for Microelectronics, TU Wien, Vienna, Austria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic at the","institution_ids":["https://openalex.org/I4210105054"]},{"raw_affiliation_string":"Institute for Microelectronics, TU Wien, Vienna, Austria","institution_ids":["https://openalex.org/I145847075"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060787528","display_name":"Mario Bendra","orcid":"https://orcid.org/0000-0001-5994-2682"},"institutions":[{"id":"https://openalex.org/I145847075","display_name":"TU Wien","ror":"https://ror.org/04d836q62","country_code":"AT","type":"education","lineage":["https://openalex.org/I145847075"]},{"id":"https://openalex.org/I4210105054","display_name":"Christian Doppler Laboratory for Thermoelectricity","ror":"https://ror.org/01cbw5x35","country_code":"AT","type":"facility","lineage":["https://openalex.org/I129774422","https://openalex.org/I145847075","https://openalex.org/I4210105054"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"Mario Bendra","raw_affiliation_strings":["Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic at the","Institute for Microelectronics, TU Wien, Vienna, Austria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic at the","institution_ids":["https://openalex.org/I4210105054"]},{"raw_affiliation_string":"Institute for Microelectronics, TU Wien, Vienna, Austria","institution_ids":["https://openalex.org/I145847075"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080949438","display_name":"Johannes Ender","orcid":"https://orcid.org/0000-0003-0972-0875"},"institutions":[{"id":"https://openalex.org/I145847075","display_name":"TU Wien","ror":"https://ror.org/04d836q62","country_code":"AT","type":"education","lineage":["https://openalex.org/I145847075"]},{"id":"https://openalex.org/I4210105054","display_name":"Christian Doppler Laboratory for Thermoelectricity","ror":"https://ror.org/01cbw5x35","country_code":"AT","type":"facility","lineage":["https://openalex.org/I129774422","https://openalex.org/I145847075","https://openalex.org/I4210105054"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"Johannes Ender","raw_affiliation_strings":["Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic at the","Institute for Microelectronics, TU Wien, Vienna, Austria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic at the","institution_ids":["https://openalex.org/I4210105054"]},{"raw_affiliation_string":"Institute for Microelectronics, TU Wien, Vienna, Austria","institution_ids":["https://openalex.org/I145847075"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032179143","display_name":"Roberto Lacerda de Orio","orcid":"https://orcid.org/0000-0002-9019-4835"},"institutions":[{"id":"https://openalex.org/I145847075","display_name":"TU Wien","ror":"https://ror.org/04d836q62","country_code":"AT","type":"education","lineage":["https://openalex.org/I145847075"]},{"id":"https://openalex.org/I4210105054","display_name":"Christian Doppler Laboratory for Thermoelectricity","ror":"https://ror.org/01cbw5x35","country_code":"AT","type":"facility","lineage":["https://openalex.org/I129774422","https://openalex.org/I145847075","https://openalex.org/I4210105054"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"Roberto L. De Orio","raw_affiliation_strings":["Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic at the","Institute for Microelectronics, TU Wien, Vienna, Austria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic at the","institution_ids":["https://openalex.org/I4210105054"]},{"raw_affiliation_string":"Institute for Microelectronics, TU Wien, Vienna, Austria","institution_ids":["https://openalex.org/I145847075"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021476186","display_name":"Wolfgang Goes","orcid":"https://orcid.org/0000-0001-9688-9921"},"institutions":[{"id":"https://openalex.org/I4210162115","display_name":"Silvaco (United Kingdom)","ror":"https://ror.org/05bs32x30","country_code":"GB","type":"company","lineage":["https://openalex.org/I4210162115","https://openalex.org/I4405261486"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Wolfgang Goes","raw_affiliation_strings":["Silvaco Europe Ltd.,Cambridge,United Kingdom","Silvaco Europe Ltd., Cambridge, United Kingdom"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Silvaco Europe Ltd.,Cambridge,United Kingdom","institution_ids":["https://openalex.org/I4210162115"]},{"raw_affiliation_string":"Silvaco Europe Ltd., Cambridge, United Kingdom","institution_ids":["https://openalex.org/I4210162115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043510129","display_name":"S. Selberherr","orcid":"https://orcid.org/0000-0002-5583-6177"},"institutions":[{"id":"https://openalex.org/I145847075","display_name":"TU Wien","ror":"https://ror.org/04d836q62","country_code":"AT","type":"education","lineage":["https://openalex.org/I145847075"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"Siegfried Selberherr","raw_affiliation_strings":["Institute for Microelectronics, TU Wien,Vienna,Austria,1040"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Microelectronics, TU Wien,Vienna,Austria,1040","institution_ids":["https://openalex.org/I145847075"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5023885831","display_name":"Viktor Sverdlov","orcid":"https://orcid.org/0000-0003-1736-6976"},"institutions":[{"id":"https://openalex.org/I145847075","display_name":"TU Wien","ror":"https://ror.org/04d836q62","country_code":"AT","type":"education","lineage":["https://openalex.org/I145847075"]},{"id":"https://openalex.org/I4210105054","display_name":"Christian Doppler Laboratory for Thermoelectricity","ror":"https://ror.org/01cbw5x35","country_code":"AT","type":"facility","lineage":["https://openalex.org/I129774422","https://openalex.org/I145847075","https://openalex.org/I4210105054"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"Viktor Sverdlov","raw_affiliation_strings":["Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic at the","Institute for Microelectronics, TU Wien, Vienna, Austria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic at the","institution_ids":["https://openalex.org/I4210105054"]},{"raw_affiliation_string":"Institute for Microelectronics, TU Wien, Vienna, Austria","institution_ids":["https://openalex.org/I145847075"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.9502,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.91119024,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"348","last_page":"351"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9983000159263611,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10382","display_name":"Quantum and electron transport phenomena","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/magnetoresistive-random-access-memory","display_name":"Magnetoresistive random-access memory","score":0.8196494579315186},{"id":"https://openalex.org/keywords/torque","display_name":"Torque","score":0.7711777687072754},{"id":"https://openalex.org/keywords/spin-transfer-torque","display_name":"Spin-transfer torque","score":0.7565759420394897},{"id":"https://openalex.org/keywords/spin","display_name":"Spin (aerodynamics)","score":0.6987046003341675},{"id":"https://openalex.org/keywords/charge","display_name":"Charge (physics)","score":0.6231480240821838},{"id":"https://openalex.org/keywords/magnetization","display_name":"Magnetization","score":0.618741512298584},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.6154210567474365},{"id":"https://openalex.org/keywords/tunnel-magnetoresistance","display_name":"Tunnel magnetoresistance","score":0.5998935699462891},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5048850178718567},{"id":"https://openalex.org/keywords/current","display_name":"Current (fluid)","score":0.48344215750694275},{"id":"https://openalex.org/keywords/magnet","display_name":"Magnet","score":0.4719879925251007},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.40186017751693726},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3910595774650574},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2940745949745178},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.2740454375743866},{"id":"https://openalex.org/keywords/ferromagnetism","display_name":"Ferromagnetism","score":0.2537234127521515},{"id":"https://openalex.org/keywords/magnetic-field","display_name":"Magnetic field","score":0.21414169669151306},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.14740347862243652},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.0867062509059906}],"concepts":[{"id":"https://openalex.org/C46891859","wikidata":"https://www.wikidata.org/wiki/Q1061546","display_name":"Magnetoresistive random-access memory","level":3,"score":0.8196494579315186},{"id":"https://openalex.org/C144171764","wikidata":"https://www.wikidata.org/wiki/Q48103","display_name":"Torque","level":2,"score":0.7711777687072754},{"id":"https://openalex.org/C609986","wikidata":"https://www.wikidata.org/wiki/Q844840","display_name":"Spin-transfer torque","level":4,"score":0.7565759420394897},{"id":"https://openalex.org/C42704618","wikidata":"https://www.wikidata.org/wiki/Q910917","display_name":"Spin (aerodynamics)","level":2,"score":0.6987046003341675},{"id":"https://openalex.org/C188082385","wikidata":"https://www.wikidata.org/wiki/Q73792","display_name":"Charge (physics)","level":2,"score":0.6231480240821838},{"id":"https://openalex.org/C32546565","wikidata":"https://www.wikidata.org/wiki/Q856711","display_name":"Magnetization","level":3,"score":0.618741512298584},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.6154210567474365},{"id":"https://openalex.org/C56202322","wikidata":"https://www.wikidata.org/wiki/Q1884383","display_name":"Tunnel magnetoresistance","level":3,"score":0.5998935699462891},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5048850178718567},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.48344215750694275},{"id":"https://openalex.org/C16389437","wikidata":"https://www.wikidata.org/wiki/Q11421","display_name":"Magnet","level":2,"score":0.4719879925251007},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.40186017751693726},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3910595774650574},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2940745949745178},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.2740454375743866},{"id":"https://openalex.org/C82217956","wikidata":"https://www.wikidata.org/wiki/Q184207","display_name":"Ferromagnetism","level":2,"score":0.2537234127521515},{"id":"https://openalex.org/C115260700","wikidata":"https://www.wikidata.org/wiki/Q11408","display_name":"Magnetic field","level":2,"score":0.21414169669151306},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14740347862243652},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.0867062509059906},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.0},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc55479.2022.9947196","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc55479.2022.9947196","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1911760509","https://openalex.org/W1972070513","https://openalex.org/W1978031659","https://openalex.org/W2084617787","https://openalex.org/W2258686155","https://openalex.org/W2962693675","https://openalex.org/W2963322278","https://openalex.org/W3005886446","https://openalex.org/W3006384944","https://openalex.org/W3095958798","https://openalex.org/W3102522602","https://openalex.org/W3136392954","https://openalex.org/W3137612986","https://openalex.org/W3139001423","https://openalex.org/W3139448463","https://openalex.org/W3169349908"],"related_works":["https://openalex.org/W4226197542","https://openalex.org/W1977755618","https://openalex.org/W2034593071","https://openalex.org/W1970094457","https://openalex.org/W2744144420","https://openalex.org/W4231059390","https://openalex.org/W3136027979","https://openalex.org/W2490184523","https://openalex.org/W2543376619","https://openalex.org/W2289300168"],"abstract_inverted_index":{"We":[0,63],"present":[1],"an":[2],"accurate":[3],"extension":[4],"of":[5,25,73,97,119],"the":[6,16,23,42,45,50,57,66,74,78,95,98],"coupled":[7],"spin":[8,51],"and":[9,70,84,100],"charge":[10,31],"transport":[11],"model":[12],"used":[13],"to":[14,21,92],"compute":[15],"spin-transfer":[17],"torques":[18,75],"in":[19],"nanovalves":[20],"enable":[22],"anlysis":[24],"ultra-scaled":[26,122],"magnetic":[27],"tunnel":[28,58],"junctions.":[29],"The":[30,110],"current":[32,52],"behavior":[33],"is":[34,90,113],"reproduced":[35],"with":[36],"low":[37],"conductivity":[38],"locally":[39],"dependent":[40],"on":[41,77,106],"angle":[43,71],"between":[44],"magnetization":[46],"vectors,":[47],"while":[48],"for":[49,116],"proper":[53],"boundary":[54],"conditions":[55],"at":[56],"barrier":[59],"interfaces":[60],"are":[61,81],"introduced.":[62],"demonstrate":[64],"that":[65,85],"experimentally":[67],"measured":[68],"voltage":[69],"dependencies":[72],"acting":[76,105],"free":[79],"layer":[80],"accurately":[82,93],"reproduced,":[83],"using":[86],"our":[87],"extended":[88],"approach":[89,112],"key":[91],"capture":[94],"interplay":[96],"Slonczewski":[99],"Zhang-":[101],"Li":[102],"torque":[103],"contributions":[104],"a":[107],"textured":[108],"magnetization.":[109],"described":[111],"successfully":[114],"employed":[115],"switching":[117],"simulation":[118],"recently":[120],"proposed":[121],"MRAM":[123],"cells.":[124]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}