{"id":"https://openalex.org/W4247602162","doi":"https://doi.org/10.1109/essderc53440.2021.9631789","title":"Cryogenic Characterization and Modeling of 14 nm Bulk FinFET Technology","display_name":"Cryogenic Characterization and Modeling of 14 nm Bulk FinFET Technology","publication_year":2021,"publication_date":"2021-09-13","ids":{"openalex":"https://openalex.org/W4247602162","doi":"https://doi.org/10.1109/essderc53440.2021.9631789"},"language":"en","primary_location":{"id":"doi:10.1109/essderc53440.2021.9631789","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc53440.2021.9631789","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5062197107","display_name":"Asma Chabane","orcid":null},"institutions":[{"id":"https://openalex.org/I4210126328","display_name":"IBM Research - Zurich","ror":"https://ror.org/02js37d36","country_code":"CH","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210126328"]}],"countries":["CH"],"is_corresponding":true,"raw_author_name":"Asma Chabane","raw_affiliation_strings":["IBM Research GmbH, Ruschlikon, Switzerland"],"affiliations":[{"raw_affiliation_string":"IBM Research GmbH, Ruschlikon, Switzerland","institution_ids":["https://openalex.org/I4210126328"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005479387","display_name":"Mridula Prathapan","orcid":null},"institutions":[{"id":"https://openalex.org/I4210126328","display_name":"IBM Research - Zurich","ror":"https://ror.org/02js37d36","country_code":"CH","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210126328"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Mridula Prathapan","raw_affiliation_strings":["IBM Research GmbH, Ruschlikon, Switzerland"],"affiliations":[{"raw_affiliation_string":"IBM Research GmbH, Ruschlikon, Switzerland","institution_ids":["https://openalex.org/I4210126328"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026690142","display_name":"Peter R. M\u00fceller","orcid":"https://orcid.org/0000-0002-1922-5635"},"institutions":[{"id":"https://openalex.org/I4210126328","display_name":"IBM Research - Zurich","ror":"https://ror.org/02js37d36","country_code":"CH","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210126328"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Peter Mueller","raw_affiliation_strings":["IBM Research GmbH, Ruschlikon, Switzerland"],"affiliations":[{"raw_affiliation_string":"IBM Research GmbH, Ruschlikon, Switzerland","institution_ids":["https://openalex.org/I4210126328"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064590051","display_name":"Eunjung Cha","orcid":"https://orcid.org/0000-0001-5818-3274"},"institutions":[{"id":"https://openalex.org/I4210126328","display_name":"IBM Research - Zurich","ror":"https://ror.org/02js37d36","country_code":"CH","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210126328"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Eunjung Cha","raw_affiliation_strings":["IBM Research GmbH, Ruschlikon, Switzerland"],"affiliations":[{"raw_affiliation_string":"IBM Research GmbH, Ruschlikon, Switzerland","institution_ids":["https://openalex.org/I4210126328"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014994900","display_name":"Pier Andrea Francese","orcid":"https://orcid.org/0000-0003-2944-9058"},"institutions":[{"id":"https://openalex.org/I4210126328","display_name":"IBM Research - Zurich","ror":"https://ror.org/02js37d36","country_code":"CH","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210126328"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Pier Andrea Francese","raw_affiliation_strings":["IBM Research GmbH, Ruschlikon, Switzerland"],"affiliations":[{"raw_affiliation_string":"IBM Research GmbH, Ruschlikon, Switzerland","institution_ids":["https://openalex.org/I4210126328"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085908094","display_name":"Marcel Kossel","orcid":"https://orcid.org/0000-0003-3053-2422"},"institutions":[{"id":"https://openalex.org/I4210126328","display_name":"IBM Research - Zurich","ror":"https://ror.org/02js37d36","country_code":"CH","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210126328"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Marcel Kossel","raw_affiliation_strings":["IBM Research GmbH, Ruschlikon, Switzerland"],"affiliations":[{"raw_affiliation_string":"IBM Research GmbH, Ruschlikon, Switzerland","institution_ids":["https://openalex.org/I4210126328"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5076202817","display_name":"Thomas Morf","orcid":null},"institutions":[{"id":"https://openalex.org/I4210126328","display_name":"IBM Research - Zurich","ror":"https://ror.org/02js37d36","country_code":"CH","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210126328"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Thomas Morf","raw_affiliation_strings":["IBM Research GmbH, Ruschlikon, Switzerland"],"affiliations":[{"raw_affiliation_string":"IBM Research GmbH, Ruschlikon, Switzerland","institution_ids":["https://openalex.org/I4210126328"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5058035943","display_name":"Cezar B. Zota","orcid":"https://orcid.org/0000-0001-6843-2131"},"institutions":[{"id":"https://openalex.org/I4210126328","display_name":"IBM Research - Zurich","ror":"https://ror.org/02js37d36","country_code":"CH","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210126328"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Cezar Zota","raw_affiliation_strings":["IBM Research GmbH, Ruschlikon, Switzerland"],"affiliations":[{"raw_affiliation_string":"IBM Research GmbH, Ruschlikon, Switzerland","institution_ids":["https://openalex.org/I4210126328"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":8,"corresponding_author_ids":["https://openalex.org/A5062197107"],"corresponding_institution_ids":["https://openalex.org/I4210126328"],"apc_list":null,"apc_paid":null,"fwci":0.6016,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.68055913,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"67","last_page":"70"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10382","display_name":"Quantum and electron transport phenomena","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nmos-logic","display_name":"NMOS logic","score":0.7102214097976685},{"id":"https://openalex.org/keywords/cryostat","display_name":"Cryostat","score":0.6759406924247742},{"id":"https://openalex.org/keywords/cryogenic-temperature","display_name":"Cryogenic temperature","score":0.6572985053062439},{"id":"https://openalex.org/keywords/characterization","display_name":"Characterization (materials science)","score":0.5341711640357971},{"id":"https://openalex.org/keywords/cryogenics","display_name":"Cryogenics","score":0.5190916061401367},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.44772911071777344},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.41447269916534424},{"id":"https://openalex.org/keywords/subthreshold-swing","display_name":"Subthreshold swing","score":0.4123004376888275},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.37220990657806396},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.34218162298202515},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.2536872625350952},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.246688574552536},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.24480405449867249},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.20621758699417114},{"id":"https://openalex.org/keywords/superconductivity","display_name":"Superconductivity","score":0.20351502299308777},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16393643617630005},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.15075325965881348}],"concepts":[{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.7102214097976685},{"id":"https://openalex.org/C89106999","wikidata":"https://www.wikidata.org/wiki/Q909476","display_name":"Cryostat","level":3,"score":0.6759406924247742},{"id":"https://openalex.org/C2985130431","wikidata":"https://www.wikidata.org/wiki/Q192116","display_name":"Cryogenic temperature","level":2,"score":0.6572985053062439},{"id":"https://openalex.org/C2780841128","wikidata":"https://www.wikidata.org/wiki/Q5073781","display_name":"Characterization (materials science)","level":2,"score":0.5341711640357971},{"id":"https://openalex.org/C179725390","wikidata":"https://www.wikidata.org/wiki/Q192116","display_name":"Cryogenics","level":2,"score":0.5190916061401367},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.44772911071777344},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.41447269916534424},{"id":"https://openalex.org/C2982823382","wikidata":"https://www.wikidata.org/wiki/Q7632226","display_name":"Subthreshold swing","level":5,"score":0.4123004376888275},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.37220990657806396},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.34218162298202515},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.2536872625350952},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.246688574552536},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.24480405449867249},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.20621758699417114},{"id":"https://openalex.org/C54101563","wikidata":"https://www.wikidata.org/wiki/Q124131","display_name":"Superconductivity","level":2,"score":0.20351502299308777},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16393643617630005},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.15075325965881348},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc53440.2021.9631789","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc53440.2021.9631789","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Industry, innovation and infrastructure","score":0.4699999988079071,"id":"https://metadata.un.org/sdg/9"}],"awards":[{"id":"https://openalex.org/G8823616746","display_name":null,"funder_award_id":"871764","funder_id":"https://openalex.org/F4320332999","funder_display_name":"Horizon 2020 Framework Programme"}],"funders":[{"id":"https://openalex.org/F4320320924","display_name":"Schweizerischer Nationalfonds zur F\u00f6rderung der Wissenschaftlichen Forschung","ror":"https://ror.org/00yjd3n13"},{"id":"https://openalex.org/F4320332999","display_name":"Horizon 2020 Framework Programme","ror":"https://ror.org/00k4n6c32"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":20,"referenced_works":["https://openalex.org/W2755984005","https://openalex.org/W2761830393","https://openalex.org/W2781738013","https://openalex.org/W2795812195","https://openalex.org/W2891246502","https://openalex.org/W2950805899","https://openalex.org/W2951836937","https://openalex.org/W2979411722","https://openalex.org/W2996946661","https://openalex.org/W3019034455","https://openalex.org/W3019381406","https://openalex.org/W3019951362","https://openalex.org/W3037853801","https://openalex.org/W3100931082","https://openalex.org/W3102951873","https://openalex.org/W3106097556","https://openalex.org/W3106540299","https://openalex.org/W3108344039","https://openalex.org/W3124658597","https://openalex.org/W3163303881"],"related_works":["https://openalex.org/W3138039620","https://openalex.org/W1977760550","https://openalex.org/W4296901837","https://openalex.org/W1965884804","https://openalex.org/W2095496391","https://openalex.org/W2199655258","https://openalex.org/W2065497841","https://openalex.org/W1979773167","https://openalex.org/W2068670874","https://openalex.org/W2059894852"],"abstract_inverted_index":{"In":[0],"this":[1],"work,":[2],"we":[3],"report":[4],"the":[5,39,42,85,104,127],"characterization":[6],"and":[7,35,63,92],"modeling":[8],"of":[9,41,53,60,66,99,121],"a":[10,76,96],"14":[11],"nm":[12],"bulk":[13],"FinFET":[14,79],"technology":[15,108],"from":[16],"room-temperature":[17],"down":[18],"to":[19,32],"4.6":[20,70],"K.":[21,71],"A":[22],"cryogenic":[23,78,124],"device":[24,49],"model":[25],"is":[26],"used":[27],"which":[28],"shows":[29],"excellent":[30],"fit":[31],"measured":[33],"data":[34],"can":[36],"accurately":[37],"predict":[38],"performance":[40],"devices":[43],"at":[44,69],"low":[45],"temperatures.":[46],"The":[47],"nMOS":[48],"showed":[50],"subthreshold":[51],"swing":[52],"20":[54],"mV/decade,":[55],"<tex":[56],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[57,90],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$V_{\\mathrm{T}}$</tex>":[58],"shift":[59],"80":[61],"mV":[62],"gm":[64],"enhancement":[65],"30%,":[67],"all":[68],"These":[72],"results":[73],"show":[74],"that":[75],"tailored":[77],"technology,":[80],"i.e.":[81],"one":[82],"accounting":[83],"for":[84,111],"change":[86],"in":[87,115],"V":[88],"<inf":[89],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">T</inf>":[91],"SS,":[93],"could":[94],"achieve":[95],"sharp":[97],"reduction":[98],"dissipated":[100],"power":[101],"by":[102,118],"reducing":[103],"drive":[105],"bias.":[106],"Such":[107],"has":[109],"potential":[110],"strong":[112],"impact":[113],"e.g.":[114],"quantum":[116],"computing,":[117],"enabling":[119],"integration":[120],"dense":[122],"advanced":[123],"ICs":[125],"inside":[126],"cryostat.":[128]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":4},{"year":2022,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}