{"id":"https://openalex.org/W3204034222","doi":"https://doi.org/10.1109/essderc53440.2021.9631773","title":"Improvement on Ge/GeO<sub>x</sub>/Tm<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Gate Performance by Forming Gas Anneal","display_name":"Improvement on Ge/GeO<sub>x</sub>/Tm<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Gate Performance by Forming Gas Anneal","publication_year":2021,"publication_date":"2021-09-13","ids":{"openalex":"https://openalex.org/W3204034222","doi":"https://doi.org/10.1109/essderc53440.2021.9631773","mag":"3204034222"},"language":"en","primary_location":{"id":"doi:10.1109/essderc53440.2021.9631773","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc53440.2021.9631773","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5049810201","display_name":"Laura \u017durauskait\u0117","orcid":"https://orcid.org/0000-0002-6214-0004"},"institutions":[{"id":"https://openalex.org/I86987016","display_name":"KTH Royal Institute of Technology","ror":"https://ror.org/026vcq606","country_code":"SE","type":"education","lineage":["https://openalex.org/I86987016"]}],"countries":["SE"],"is_corresponding":true,"raw_author_name":"Laura Zurauskaite","raw_affiliation_strings":["Division of Electronics and Embedded Systems, KTH Royal Institute of Technology, Kista, Sweden"],"affiliations":[{"raw_affiliation_string":"Division of Electronics and Embedded Systems, KTH Royal Institute of Technology, Kista, Sweden","institution_ids":["https://openalex.org/I86987016"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059858621","display_name":"Mikael \u00d6stling","orcid":"https://orcid.org/0000-0002-5845-3032"},"institutions":[{"id":"https://openalex.org/I86987016","display_name":"KTH Royal Institute of Technology","ror":"https://ror.org/026vcq606","country_code":"SE","type":"education","lineage":["https://openalex.org/I86987016"]}],"countries":["SE"],"is_corresponding":false,"raw_author_name":"Mikael Ostling","raw_affiliation_strings":["Division of Electronics and Embedded Systems, KTH Royal Institute of Technology, Kista, Sweden"],"affiliations":[{"raw_affiliation_string":"Division of Electronics and Embedded Systems, KTH Royal Institute of Technology, Kista, Sweden","institution_ids":["https://openalex.org/I86987016"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5065066084","display_name":"Per\u2010Erik Hellstr\u00f6m","orcid":"https://orcid.org/0000-0001-6705-1660"},"institutions":[{"id":"https://openalex.org/I86987016","display_name":"KTH Royal Institute of Technology","ror":"https://ror.org/026vcq606","country_code":"SE","type":"education","lineage":["https://openalex.org/I86987016"]}],"countries":["SE"],"is_corresponding":false,"raw_author_name":"Per-Erik Hellstrom","raw_affiliation_strings":["Division of Electronics and Embedded Systems, KTH Royal Institute of Technology, Kista, Sweden"],"affiliations":[{"raw_affiliation_string":"Division of Electronics and Embedded Systems, KTH Royal Institute of Technology, Kista, Sweden","institution_ids":["https://openalex.org/I86987016"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5049810201"],"corresponding_institution_ids":["https://openalex.org/I86987016"],"apc_list":null,"apc_paid":null,"fwci":0.1003,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.43725384,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"227","last_page":"230"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12588","display_name":"Electronic and Structural Properties of Oxides","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/passivation","display_name":"Passivation","score":0.5315104722976685},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.4519703686237335},{"id":"https://openalex.org/keywords/annealing","display_name":"Annealing (glass)","score":0.4444856643676758},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.42123791575431824},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.40652716159820557},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.346026211977005},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.3400934338569641},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.25154340267181396},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.24576213955879211},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.1157277524471283},{"id":"https://openalex.org/keywords/organic-chemistry","display_name":"Organic chemistry","score":0.1075437068939209},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.10148078203201294}],"concepts":[{"id":"https://openalex.org/C33574316","wikidata":"https://www.wikidata.org/wiki/Q917260","display_name":"Passivation","level":3,"score":0.5315104722976685},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.4519703686237335},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.4444856643676758},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.42123791575431824},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.40652716159820557},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.346026211977005},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3400934338569641},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.25154340267181396},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.24576213955879211},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.1157277524471283},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.1075437068939209},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.10148078203201294},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc53440.2021.9631773","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc53440.2021.9631773","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320320940","display_name":"Stiftelsen f\u00f6r\u00a0Strategisk Forskning","ror":"https://ror.org/044wr7g58"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W2026217233","https://openalex.org/W2043502600","https://openalex.org/W2047553858","https://openalex.org/W2062828147","https://openalex.org/W2090214562","https://openalex.org/W2097871720","https://openalex.org/W2122875263","https://openalex.org/W2155955729","https://openalex.org/W2242231396","https://openalex.org/W2477190622","https://openalex.org/W2767167267","https://openalex.org/W2890998655"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W2893117232","https://openalex.org/W2368982584","https://openalex.org/W957405543","https://openalex.org/W2100154643","https://openalex.org/W81629128","https://openalex.org/W2326159057","https://openalex.org/W1965743066","https://openalex.org/W2949086270","https://openalex.org/W2392183253"],"abstract_inverted_index":{"The":[0],"improvement":[1],"of":[2,23,79],"forming":[3,48,91],"gas":[4,49,92],"anneal":[5,50,93],"(10":[6],"%":[7],"H":[8],"<inf":[9,14,25,29,33,37],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[10,15,26,30,34,38],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</inf>":[11,16,31,39],"in":[12,102],"N":[13],")":[17],"at":[18],"400\u00b0C":[19],"on":[20],"electrical":[21],"properties":[22],"Ge/GeO":[24],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">x</inf>":[27],"/Tm":[28],"O":[32],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">3</inf>":[35],"/HfO":[36],"gate":[40,104],"stacks":[41],"is":[42,45,64,94],"investigated.":[43],"It":[44],"found":[46,96],"that":[47],"effectively":[51],"suppresses":[52],"fixed":[53,71],"charge":[54,72],"density,":[55],"oxide":[56,100],"trap":[57],"density":[58,73],"and":[59,74],"interface":[60],"state":[61],"density.":[62],"Hydrogen":[63],"demonstrated":[65],"to":[66,84,97],"efficiently":[67],"passivate":[68],"the":[69,76,80],"negative":[70],"reduce":[75,98],"global":[77],"variability":[78],"flatband":[81],"voltage":[82],"down":[83],"90":[85],"mV":[86],"over":[87],"a":[88],"wafer.":[89],"A":[90],"also":[95],"equivalent":[99],"thickness":[101],"scaled":[103],"stacks.":[105]},"counts_by_year":[{"year":2024,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}