{"id":"https://openalex.org/W2982773089","doi":"https://doi.org/10.1109/essderc.2019.8901832","title":"Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel","display_name":"Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel","publication_year":2019,"publication_date":"2019-09-01","ids":{"openalex":"https://openalex.org/W2982773089","doi":"https://doi.org/10.1109/essderc.2019.8901832","mag":"2982773089"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2019.8901832","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2019.8901832","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5085544355","display_name":"Ryosho Nakane","orcid":"https://orcid.org/0000-0002-9059-9349"},"institutions":[{"id":"https://openalex.org/I74801974","display_name":"The University of Tokyo","ror":"https://ror.org/057zh3y96","country_code":"JP","type":"education","lineage":["https://openalex.org/I74801974"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Ryosho Nakane","raw_affiliation_strings":["Dept. of Electrical Engineering and Information Systems & Institute of Innovation in International Engineering Education, The University of Tokyo, Tokyo, Japan"],"affiliations":[{"raw_affiliation_string":"Dept. of Electrical Engineering and Information Systems & Institute of Innovation in International Engineering Education, The University of Tokyo, Tokyo, Japan","institution_ids":["https://openalex.org/I74801974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026000139","display_name":"Sh\u00f4ichi Sato","orcid":"https://orcid.org/0000-0002-0313-9601"},"institutions":[{"id":"https://openalex.org/I74801974","display_name":"The University of Tokyo","ror":"https://ror.org/057zh3y96","country_code":"JP","type":"education","lineage":["https://openalex.org/I74801974"]},{"id":"https://openalex.org/I14396692","display_name":"Tokyo University of Information Sciences","ror":"https://ror.org/044bdx604","country_code":"JP","type":"education","lineage":["https://openalex.org/I14396692"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shoichi Sato","raw_affiliation_strings":["Dept. of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan"],"affiliations":[{"raw_affiliation_string":"Dept. of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan","institution_ids":["https://openalex.org/I14396692","https://openalex.org/I74801974"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5062408915","display_name":"Masaaki Tanaka","orcid":"https://orcid.org/0000-0003-3599-663X"},"institutions":[{"id":"https://openalex.org/I74801974","display_name":"The University of Tokyo","ror":"https://ror.org/057zh3y96","country_code":"JP","type":"education","lineage":["https://openalex.org/I74801974"]},{"id":"https://openalex.org/I4210125833","display_name":"Spintronics Research Network of Japan","ror":"https://ror.org/03bbyax37","country_code":"JP","type":"facility","lineage":["https://openalex.org/I201537933","https://openalex.org/I203951103","https://openalex.org/I4210125833","https://openalex.org/I74801974","https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masaaki Tanaka","raw_affiliation_strings":["Dept. of Electrical Engineering and Information Systems & Center for Spintronics Research Network (CSRN), The University of Tokyo, Tokyo, Japan"],"affiliations":[{"raw_affiliation_string":"Dept. of Electrical Engineering and Information Systems & Center for Spintronics Research Network (CSRN), The University of Tokyo, Tokyo, Japan","institution_ids":["https://openalex.org/I4210125833","https://openalex.org/I74801974"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5085544355"],"corresponding_institution_ids":["https://openalex.org/I74801974"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.11477262,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"3","issue":null,"first_page":"142","last_page":"145"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10382","display_name":"Quantum and electron transport phenomena","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.6071942448616028},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6026246547698975},{"id":"https://openalex.org/keywords/spin-valve","display_name":"Spin valve","score":0.5911475419998169},{"id":"https://openalex.org/keywords/electric-field","display_name":"Electric field","score":0.5816922783851624},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.5607885122299194},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.503865659236908},{"id":"https://openalex.org/keywords/spin","display_name":"Spin (aerodynamics)","score":0.49813008308410645},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4904470145702362},{"id":"https://openalex.org/keywords/spin-diffusion","display_name":"Spin diffusion","score":0.46940338611602783},{"id":"https://openalex.org/keywords/spin-hall-effect","display_name":"Spin Hall effect","score":0.4427783787250519},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.42539891600608826},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4216015934944153},{"id":"https://openalex.org/keywords/magnetoresistance","display_name":"Magnetoresistance","score":0.4206992983818054},{"id":"https://openalex.org/keywords/electron","display_name":"Electron","score":0.4195197522640228},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.41853654384613037},{"id":"https://openalex.org/keywords/ferromagnetism","display_name":"Ferromagnetism","score":0.3599734306335449},{"id":"https://openalex.org/keywords/magnetic-field","display_name":"Magnetic field","score":0.3227248191833496},{"id":"https://openalex.org/keywords/spin-polarization","display_name":"Spin polarization","score":0.29620635509490967},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2840551733970642},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.23987632989883423},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.17180702090263367}],"concepts":[{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.6071942448616028},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6026246547698975},{"id":"https://openalex.org/C118316555","wikidata":"https://www.wikidata.org/wiki/Q4115590","display_name":"Spin valve","level":4,"score":0.5911475419998169},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.5816922783851624},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.5607885122299194},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.503865659236908},{"id":"https://openalex.org/C42704618","wikidata":"https://www.wikidata.org/wiki/Q910917","display_name":"Spin (aerodynamics)","level":2,"score":0.49813008308410645},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4904470145702362},{"id":"https://openalex.org/C2778928649","wikidata":"https://www.wikidata.org/wiki/Q7577402","display_name":"Spin diffusion","level":3,"score":0.46940338611602783},{"id":"https://openalex.org/C155194400","wikidata":"https://www.wikidata.org/wiki/Q456437","display_name":"Spin Hall effect","level":4,"score":0.4427783787250519},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.42539891600608826},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4216015934944153},{"id":"https://openalex.org/C117958382","wikidata":"https://www.wikidata.org/wiki/Q58347","display_name":"Magnetoresistance","level":3,"score":0.4206992983818054},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.4195197522640228},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.41853654384613037},{"id":"https://openalex.org/C82217956","wikidata":"https://www.wikidata.org/wiki/Q184207","display_name":"Ferromagnetism","level":2,"score":0.3599734306335449},{"id":"https://openalex.org/C115260700","wikidata":"https://www.wikidata.org/wiki/Q11408","display_name":"Magnetic field","level":2,"score":0.3227248191833496},{"id":"https://openalex.org/C21690051","wikidata":"https://www.wikidata.org/wiki/Q962347","display_name":"Spin polarization","level":3,"score":0.29620635509490967},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2840551733970642},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.23987632989883423},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.17180702090263367},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc.2019.8901832","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2019.8901832","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.4300000071525574}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W1971796493","https://openalex.org/W2014463687","https://openalex.org/W2024143736","https://openalex.org/W2043595253","https://openalex.org/W2065545651","https://openalex.org/W2080971545","https://openalex.org/W2132718114","https://openalex.org/W2139424966","https://openalex.org/W2168415276","https://openalex.org/W2443047320","https://openalex.org/W2610029903","https://openalex.org/W2799885141","https://openalex.org/W2919109642","https://openalex.org/W2931892613","https://openalex.org/W2963866763","https://openalex.org/W3100661376","https://openalex.org/W3101733717","https://openalex.org/W3102949213"],"related_works":["https://openalex.org/W1945007365","https://openalex.org/W2065712954","https://openalex.org/W2890990472","https://openalex.org/W2019146574","https://openalex.org/W2231034508","https://openalex.org/W2607423769","https://openalex.org/W2948149186","https://openalex.org/W2808795347","https://openalex.org/W2902469268","https://openalex.org/W1994557753"],"abstract_inverted_index":{"We":[0],"demonstrated":[1],"Si-based":[2],"bottom-gate-type":[3],"spin":[4,19,49,113,148,161,185,196],"metal-oxide-semiconductor":[5],"field-effect":[6],"transistors":[7],"(spin":[8],"MOSFETs)":[9],"with":[10,29,76,198],"an":[11,199],"electron":[12,83,124,200],"inversion":[13,128,201],"channel":[14,40],"at":[15],"room":[16],"temperature.":[17],"Our":[18],"MOSFETs":[20,197],"were":[21,51,88,102],"fabricated":[22],"on":[23,131],"a":[24,30,62],"(001)-oriented":[25],"silicon-on-insulator":[26],"(SOI)":[27],"substrate":[28],"p-type":[31],"ultrathin":[32],"(8":[33],"nm)":[34],"Si":[35],"layer,":[36],"in":[37,126,175,195],"which":[38],"the":[39,48,70,92,99,111,117,123,127,139,142,159,173,176,184],"length":[41,115,150,163],"was":[42,67,181],"0.4,":[43],"0.7,":[44],"and":[45,61,81],"1.5":[46],"\u03bcm,":[47],"injector/detector":[50],"ferromagnetic":[52],"multilayer":[53],"(from":[54],"top":[55],"to":[56,104,122,172,190],"bottom)":[57],"Fe(4nm)/Mg(1nm)/MgO(1nm)":[58],"tunnel":[59],"junctions,":[60],"200-nm-thick":[63],"buried":[64],"oxide":[65],"layer":[66],"used":[68],"for":[69,90],"gate":[71,78],"dielectric.":[72],"In":[73],"magnetoresistance":[74],"measurements":[75],"various":[77],"electric":[79,119,144,178],"fields":[80],"source-drain":[82],"currents,":[84],"clear":[85],"spin-valve":[86,100,193],"signals":[87,101,194],"obtained":[89],"all":[91,98],"bias":[93],"conditions.":[94],"The":[95,146],"change":[96],"of":[97,141],"analyzed":[103],"reveal":[105],"\"spin":[106],"drift\"":[107],"that":[108,135,183],"can":[109],"enhance":[110],"effective":[112,147],"diffusion":[114,149,162],"by":[116,153],"lateral":[118,143,177],"field":[120],"parallel":[121],"transport":[125],"channel,":[129],"based":[130],"our":[132],"original":[133],"formula":[134],"takes":[136],"into":[137],"account":[138],"distribution":[140],"field.":[145,179],"becomes":[151],"larger":[152,192],"3":[154],"-":[155],"4":[156],"times":[157],"than":[158],"intrinsic":[160],"\u03bb":[164],"<inf":[165],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[166],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">S</inf>":[167],"=":[168],"0.41":[169],"\u03bcm":[170],"owing":[171],"increase":[174],"It":[180],"confirmed":[182],"drift":[186],"is":[187],"very":[188],"useful":[189],"achieve":[191],"channel.":[202]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}