{"id":"https://openalex.org/W2987239531","doi":"https://doi.org/10.1109/essderc.2019.8901810","title":"Back-end-of-line CMOS-compatible diode fabrication with pure boron deposition down to 50 \u00b0C","display_name":"Back-end-of-line CMOS-compatible diode fabrication with pure boron deposition down to 50 \u00b0C","publication_year":2019,"publication_date":"2019-09-01","ids":{"openalex":"https://openalex.org/W2987239531","doi":"https://doi.org/10.1109/essderc.2019.8901810","mag":"2987239531"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2019.8901810","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2019.8901810","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5054100871","display_name":"Tihomir Kne\u017eevi\u0107","orcid":"https://orcid.org/0000-0002-5759-1118"},"institutions":[{"id":"https://openalex.org/I181343428","display_name":"University of Zagreb","ror":"https://ror.org/00mv6sv71","country_code":"HR","type":"education","lineage":["https://openalex.org/I181343428"]}],"countries":["HR"],"is_corresponding":true,"raw_author_name":"Tihomir Kne\u017eevi\u0107","raw_affiliation_strings":["University of Zagreb,Faculty of Electrical Engineering and Computing,Zagreb,Croatia","Faculty of Electrical Engineering and Computing, University of Zagreb, Zagreb, Croatia"],"affiliations":[{"raw_affiliation_string":"University of Zagreb,Faculty of Electrical Engineering and Computing,Zagreb,Croatia","institution_ids":["https://openalex.org/I181343428"]},{"raw_affiliation_string":"Faculty of Electrical Engineering and Computing, University of Zagreb, Zagreb, Croatia","institution_ids":["https://openalex.org/I181343428"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061642935","display_name":"Tomislav Suligoj","orcid":null},"institutions":[{"id":"https://openalex.org/I181343428","display_name":"University of Zagreb","ror":"https://ror.org/00mv6sv71","country_code":"HR","type":"education","lineage":["https://openalex.org/I181343428"]}],"countries":["HR"],"is_corresponding":false,"raw_author_name":"Tomislav Suligoj","raw_affiliation_strings":["University of Zagreb,Faculty of Electrical Engineering and Computing,Zagreb,Croatia","Faculty of Electrical Engineering and Computing, University of Zagreb, Zagreb, Croatia"],"affiliations":[{"raw_affiliation_string":"University of Zagreb,Faculty of Electrical Engineering and Computing,Zagreb,Croatia","institution_ids":["https://openalex.org/I181343428"]},{"raw_affiliation_string":"Faculty of Electrical Engineering and Computing, University of Zagreb, Zagreb, Croatia","institution_ids":["https://openalex.org/I181343428"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101587936","display_name":"Xingyu Liu","orcid":"https://orcid.org/0000-0002-9722-6844"},"institutions":[{"id":"https://openalex.org/I94624287","display_name":"University of Twente","ror":"https://ror.org/006hf6230","country_code":"NL","type":"education","lineage":["https://openalex.org/I94624287"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"Xingyu Liu","raw_affiliation_strings":["University of Twente,Faculty of Electrical Engineering Mathematics &#x0026; Computer Science,Enschede,The Netherlands","Faculty of Electrical Engineering Mathematics & Computer Science, University of Twente, Enschede, The Netherlands"],"affiliations":[{"raw_affiliation_string":"University of Twente,Faculty of Electrical Engineering Mathematics &#x0026; Computer Science,Enschede,The Netherlands","institution_ids":["https://openalex.org/I94624287"]},{"raw_affiliation_string":"Faculty of Electrical Engineering Mathematics & Computer Science, University of Twente, Enschede, The Netherlands","institution_ids":["https://openalex.org/I94624287"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023605915","display_name":"Lis K. Nanver","orcid":"https://orcid.org/0000-0003-3667-4077"},"institutions":[{"id":"https://openalex.org/I94624287","display_name":"University of Twente","ror":"https://ror.org/006hf6230","country_code":"NL","type":"education","lineage":["https://openalex.org/I94624287"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"Lis K. Nanver","raw_affiliation_strings":["University of Twente,Faculty of Electrical Engineering Mathematics &#x0026; Computer Science,Enschede,The Netherlands","Faculty of Electrical Engineering Mathematics & Computer Science, University of Twente, Enschede, The Netherlands"],"affiliations":[{"raw_affiliation_string":"University of Twente,Faculty of Electrical Engineering Mathematics &#x0026; Computer Science,Enschede,The Netherlands","institution_ids":["https://openalex.org/I94624287"]},{"raw_affiliation_string":"Faculty of Electrical Engineering Mathematics & Computer Science, University of Twente, Enschede, The Netherlands","institution_ids":["https://openalex.org/I94624287"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090647231","display_name":"Ahmed Elsayed","orcid":"https://orcid.org/0000-0002-9680-8527"},"institutions":[{"id":"https://openalex.org/I100066346","display_name":"University of Stuttgart","ror":"https://ror.org/04vnq7t77","country_code":"DE","type":"education","lineage":["https://openalex.org/I100066346"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Ahmed Elsayed","raw_affiliation_strings":["University of Stuttgart,Institute for Semiconductor Engineering,Stuttgart,Germany","Institute for Semiconductor Engineering, University of Stuttgart, Stuttgart, Germany"],"affiliations":[{"raw_affiliation_string":"University of Stuttgart,Institute for Semiconductor Engineering,Stuttgart,Germany","institution_ids":["https://openalex.org/I100066346"]},{"raw_affiliation_string":"Institute for Semiconductor Engineering, University of Stuttgart, Stuttgart, Germany","institution_ids":["https://openalex.org/I100066346"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085295062","display_name":"Jan F. Dick","orcid":null},"institutions":[{"id":"https://openalex.org/I100066346","display_name":"University of Stuttgart","ror":"https://ror.org/04vnq7t77","country_code":"DE","type":"education","lineage":["https://openalex.org/I100066346"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Jan F. Dick","raw_affiliation_strings":["University of Stuttgart,Institute for Semiconductor Engineering,Stuttgart,Germany","Institute for Semiconductor Engineering, University of Stuttgart, Stuttgart, Germany"],"affiliations":[{"raw_affiliation_string":"University of Stuttgart,Institute for Semiconductor Engineering,Stuttgart,Germany","institution_ids":["https://openalex.org/I100066346"]},{"raw_affiliation_string":"Institute for Semiconductor Engineering, University of Stuttgart, Stuttgart, Germany","institution_ids":["https://openalex.org/I100066346"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5080290215","display_name":"J\u00f6rg Schulze","orcid":"https://orcid.org/0000-0003-3621-7888"},"institutions":[{"id":"https://openalex.org/I100066346","display_name":"University of Stuttgart","ror":"https://ror.org/04vnq7t77","country_code":"DE","type":"education","lineage":["https://openalex.org/I100066346"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Joerg Schulze","raw_affiliation_strings":["University of Stuttgart,Institute for Semiconductor Engineering,Stuttgart,Germany","Institute for Semiconductor Engineering, University of Stuttgart, Stuttgart, Germany"],"affiliations":[{"raw_affiliation_string":"University of Stuttgart,Institute for Semiconductor Engineering,Stuttgart,Germany","institution_ids":["https://openalex.org/I100066346"]},{"raw_affiliation_string":"Institute for Semiconductor Engineering, University of Stuttgart, Stuttgart, Germany","institution_ids":["https://openalex.org/I100066346"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5054100871"],"corresponding_institution_ids":["https://openalex.org/I181343428"],"apc_list":null,"apc_paid":null,"fwci":0.2421,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.56943,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"242","last_page":"245"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/boron","display_name":"Boron","score":0.6202276945114136},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.550836980342865},{"id":"https://openalex.org/keywords/chemical-vapor-deposition","display_name":"Chemical vapor deposition","score":0.5362481474876404},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.5159829258918762},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.49256426095962524},{"id":"https://openalex.org/keywords/epitaxy","display_name":"Epitaxy","score":0.48677754402160645},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.46789729595184326},{"id":"https://openalex.org/keywords/deposition","display_name":"Deposition (geology)","score":0.4304059147834778},{"id":"https://openalex.org/keywords/molecular-beam-epitaxy","display_name":"Molecular beam epitaxy","score":0.4225099980831146},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.35506898164749146},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.28744715452194214},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.28524887561798096},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.27323150634765625},{"id":"https://openalex.org/keywords/organic-chemistry","display_name":"Organic chemistry","score":0.1403786838054657}],"concepts":[{"id":"https://openalex.org/C501308230","wikidata":"https://www.wikidata.org/wiki/Q618","display_name":"Boron","level":2,"score":0.6202276945114136},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.550836980342865},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.5362481474876404},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.5159829258918762},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.49256426095962524},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.48677754402160645},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.46789729595184326},{"id":"https://openalex.org/C64297162","wikidata":"https://www.wikidata.org/wiki/Q1987070","display_name":"Deposition (geology)","level":3,"score":0.4304059147834778},{"id":"https://openalex.org/C3792809","wikidata":"https://www.wikidata.org/wiki/Q898542","display_name":"Molecular beam epitaxy","level":4,"score":0.4225099980831146},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.35506898164749146},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.28744715452194214},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.28524887561798096},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.27323150634765625},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.1403786838054657},{"id":"https://openalex.org/C2816523","wikidata":"https://www.wikidata.org/wiki/Q180184","display_name":"Sediment","level":2,"score":0.0},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/essderc.2019.8901810","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2019.8901810","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},{"id":"pmh:oai:ris.utwente.nl:openaire_cris_publications/c01a23ee-ea59-4eff-ae0b-ab8419aca15c","is_oa":false,"landing_page_url":"https://research.utwente.nl/en/publications/c01a23ee-ea59-4eff-ae0b-ab8419aca15c","pdf_url":null,"source":{"id":"https://openalex.org/S4406922991","display_name":"University of Twente Research Information","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Kne\u017eevi\u0107, T, Suligoj, T, Liu, X, Nanver, L K, Elsayed, A, Dick, J F & Schulze, J 2019, Back-end-of-line CMOS-compatible diode fabrication with pure boron deposition down to 50 \u00b0C. in ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)., 8901810, European Solid-State Device Research Conference, vol. 2019-September, IEEE, pp. 242-245, 49th European Solid-State Device Research Conference, ESSDERC 2019, Cracow, Poland, 23/09/19. https://doi.org/10.1109/ESSDERC.2019.8901810","raw_type":"info:eu-repo/semantics/publishedVersion"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G4592856394","display_name":null,"funder_award_id":"IP-2018-01-5296","funder_id":"https://openalex.org/F4320322674","funder_display_name":"Hrvatska Zaklada za Znanost"},{"id":"https://openalex.org/G629491556","display_name":null,"funder_award_id":"(NWO)","funder_id":"https://openalex.org/F4320321800","funder_display_name":"Nederlandse Organisatie voor Wetenschappelijk Onderzoek"},{"id":"https://openalex.org/G7802991578","display_name":null,"funder_award_id":"13535","funder_id":"https://openalex.org/F4320321800","funder_display_name":"Nederlandse Organisatie voor Wetenschappelijk Onderzoek"}],"funders":[{"id":"https://openalex.org/F4320320875","display_name":"Deutscher Akademischer Austauschdienst","ror":"https://ror.org/039djdh30"},{"id":"https://openalex.org/F4320321800","display_name":"Nederlandse Organisatie voor Wetenschappelijk Onderzoek","ror":"https://ror.org/04jsz6e67"},{"id":"https://openalex.org/F4320322674","display_name":"Hrvatska Zaklada za Znanost","ror":"https://ror.org/03n51vw80"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W1545945601","https://openalex.org/W1991898600","https://openalex.org/W2006506859","https://openalex.org/W2016127606","https://openalex.org/W2041055381","https://openalex.org/W2054025154","https://openalex.org/W2058758411","https://openalex.org/W2067347292","https://openalex.org/W2608203688","https://openalex.org/W2765257804","https://openalex.org/W2808613373","https://openalex.org/W2810193971","https://openalex.org/W2810588984","https://openalex.org/W2938573899","https://openalex.org/W2950117822","https://openalex.org/W2962564583","https://openalex.org/W4249556850","https://openalex.org/W7073889273"],"related_works":["https://openalex.org/W4248170858","https://openalex.org/W2391404245","https://openalex.org/W2154505035","https://openalex.org/W2071499028","https://openalex.org/W1985467192","https://openalex.org/W2366974299","https://openalex.org/W2282716039","https://openalex.org/W4253929477","https://openalex.org/W1973330524","https://openalex.org/W2858766114"],"abstract_inverted_index":{"Pure":[0],"boron":[1],"deposited":[2],"on":[3],"silicon":[4],"for":[5,17,85,103,181,188],"the":[6,39,43,57,66,70,74,104,126,136,143,157,159,166],"formation":[7],"of":[8,82,128,152,161],"p":[9,117],"<sup":[10,118,174,178],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[11,119,175,179],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">+</sup>":[12,120],"n-like":[13,121],"junctions":[14],"was":[15,30,131],"studied":[16],"deposition":[18,28,83,184],"temperatures":[19,86,106],"down":[20,87,107],"to":[21,32,38,79,88,108,149,164,171],"50":[22,109,182],"\u00b0C.":[23,90,110,190],"The":[24],"commonly":[25],"used":[26],"chemical-vapor":[27],"method":[29,84],"compared":[31],"molecular":[33,93],"beam":[34,94],"epitaxy":[35,95],"with":[36,92],"respect":[37],"electrical":[40,145],"characteristics":[41,168],"and":[42,52,69,185],"boron-layer":[44],"compactness":[45],"as":[46],"evaluated":[47],"by":[48],"etch":[49],"tests,":[50],"ellipsometry":[51],"atomic":[53],"force":[54],"microscopy.":[55],"Electrically,":[56],"important":[58],"parameters":[59],"are":[60],"minority":[61],"carrier":[62],"electron":[63,129],"injection":[64,130],"into":[65],"p-type":[67],"region":[68],"sheet":[71],"resistance":[72],"along":[73],"boron-to-silicon":[75],"interface":[76],"which":[77],"appear":[78],"be":[80,172],"independent":[81],"300":[89],"Only":[91],"did":[96],"we":[97],"succeed":[98],"in":[99],"producing":[100],"substantial":[101],"layers":[102],"lower":[105],"Also,":[111],"at":[112,135,156],"this":[113],"very":[114],"low":[115],"temperature,":[116],"diodes":[122],"were":[123],"formed,":[124],"but":[125],"suppression":[127],"less":[132],"efficient":[133],"than":[134],"higher":[137],"temperatures.":[138],"From":[139],"simulations,":[140],"assuming":[141],"that":[142],"attractive":[144],"behavior":[146],"is":[147,169],"due":[148],"a":[150],"monolayer":[151],"fixed":[153],"negative":[154],"charge":[155],"interface,":[158],"concentration":[160],"holes":[162],"needed":[163],"explain":[165],"I-V":[167],"estimated":[170],"1.4\u00d710":[173],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">11</sup>":[176],"cm":[177],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">-2</sup>":[180],"\u00b0C":[183],"1.1\u00d71013":[186],"cm-2":[187],"400":[189]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1}],"updated_date":"2026-04-21T08:09:41.155169","created_date":"2025-10-10T00:00:00"}