{"id":"https://openalex.org/W2986734171","doi":"https://doi.org/10.1109/essderc.2019.8901784","title":"GaN based HEMT technology for Power and RF applications","display_name":"GaN based HEMT technology for Power and RF applications","publication_year":2019,"publication_date":"2019-09-01","ids":{"openalex":"https://openalex.org/W2986734171","doi":"https://doi.org/10.1109/essderc.2019.8901784","mag":"2986734171"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2019.8901784","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2019.8901784","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5022414227","display_name":"M. Heuken","orcid":"https://orcid.org/0000-0001-9739-9692"},"institutions":[{"id":"https://openalex.org/I2801287017","display_name":"Aixtron (Germany)","ror":"https://ror.org/02adgag39","country_code":"DE","type":"company","lineage":["https://openalex.org/I2801287017"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"Michael Heuken","raw_affiliation_strings":["AIXTRON SE,Corporate Research & Development,Herzogenrath,Germany","Corporate Research & Development, AIXTRON SE, Herzogenrath, Germany"],"affiliations":[{"raw_affiliation_string":"AIXTRON SE,Corporate Research & Development,Herzogenrath,Germany","institution_ids":["https://openalex.org/I2801287017"]},{"raw_affiliation_string":"Corporate Research & Development, AIXTRON SE, Herzogenrath, Germany","institution_ids":["https://openalex.org/I2801287017"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5022414227"],"corresponding_institution_ids":["https://openalex.org/I2801287017"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.13174167,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"17","last_page":"20"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9973999857902527,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9961000084877014,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/wafer","display_name":"Wafer","score":0.71375572681427},{"id":"https://openalex.org/keywords/automation","display_name":"Automation","score":0.5468133091926575},{"id":"https://openalex.org/keywords/process-control","display_name":"Process control","score":0.5375634431838989},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.5233539938926697},{"id":"https://openalex.org/keywords/semiconductor-device-fabrication","display_name":"Semiconductor device fabrication","score":0.5219599604606628},{"id":"https://openalex.org/keywords/robustness","display_name":"Robustness (evolution)","score":0.5189363956451416},{"id":"https://openalex.org/keywords/throughput","display_name":"Throughput","score":0.5053766369819641},{"id":"https://openalex.org/keywords/process-engineering","display_name":"Process engineering","score":0.49706390500068665},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4232124090194702},{"id":"https://openalex.org/keywords/wafer-level-packaging","display_name":"Wafer-level packaging","score":0.41763049364089966},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4060330390930176},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3944396674633026},{"id":"https://openalex.org/keywords/process","display_name":"Process (computing)","score":0.34210947155952454},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.31342101097106934},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2834663391113281},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2702982723712921},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.2366740107536316},{"id":"https://openalex.org/keywords/mechanical-engineering","display_name":"Mechanical engineering","score":0.18268296122550964},{"id":"https://openalex.org/keywords/wireless","display_name":"Wireless","score":0.13979315757751465},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.08740150928497314}],"concepts":[{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.71375572681427},{"id":"https://openalex.org/C115901376","wikidata":"https://www.wikidata.org/wiki/Q184199","display_name":"Automation","level":2,"score":0.5468133091926575},{"id":"https://openalex.org/C155386361","wikidata":"https://www.wikidata.org/wiki/Q1649571","display_name":"Process control","level":3,"score":0.5375634431838989},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.5233539938926697},{"id":"https://openalex.org/C66018809","wikidata":"https://www.wikidata.org/wiki/Q1570432","display_name":"Semiconductor device fabrication","level":3,"score":0.5219599604606628},{"id":"https://openalex.org/C63479239","wikidata":"https://www.wikidata.org/wiki/Q7353546","display_name":"Robustness (evolution)","level":3,"score":0.5189363956451416},{"id":"https://openalex.org/C157764524","wikidata":"https://www.wikidata.org/wiki/Q1383412","display_name":"Throughput","level":3,"score":0.5053766369819641},{"id":"https://openalex.org/C21880701","wikidata":"https://www.wikidata.org/wiki/Q2144042","display_name":"Process engineering","level":1,"score":0.49706390500068665},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4232124090194702},{"id":"https://openalex.org/C2780288131","wikidata":"https://www.wikidata.org/wiki/Q4017648","display_name":"Wafer-level packaging","level":3,"score":0.41763049364089966},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4060330390930176},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3944396674633026},{"id":"https://openalex.org/C98045186","wikidata":"https://www.wikidata.org/wiki/Q205663","display_name":"Process (computing)","level":2,"score":0.34210947155952454},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.31342101097106934},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2834663391113281},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2702982723712921},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2366740107536316},{"id":"https://openalex.org/C78519656","wikidata":"https://www.wikidata.org/wiki/Q101333","display_name":"Mechanical engineering","level":1,"score":0.18268296122550964},{"id":"https://openalex.org/C555944384","wikidata":"https://www.wikidata.org/wiki/Q249","display_name":"Wireless","level":2,"score":0.13979315757751465},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.08740150928497314},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C104317684","wikidata":"https://www.wikidata.org/wiki/Q7187","display_name":"Gene","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc.2019.8901784","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2019.8901784","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.6100000143051147,"id":"https://metadata.un.org/sdg/9","display_name":"Industry, innovation and infrastructure"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1973292552","https://openalex.org/W2021143693","https://openalex.org/W2082022477","https://openalex.org/W2090925905","https://openalex.org/W2092221929","https://openalex.org/W2159764454","https://openalex.org/W2292091225","https://openalex.org/W2857951008","https://openalex.org/W2889558601","https://openalex.org/W6683447417","https://openalex.org/W6697211726"],"related_works":["https://openalex.org/W2146366317","https://openalex.org/W2070188681","https://openalex.org/W2992897358","https://openalex.org/W2041316527","https://openalex.org/W2631724279","https://openalex.org/W2970498257","https://openalex.org/W3066247946","https://openalex.org/W2164231539","https://openalex.org/W2036313051","https://openalex.org/W1988012197"],"abstract_inverted_index":{"The":[0],"paper":[1],"reports":[2],"on":[3,30,80],"basic":[4],"principles":[5],"and":[6,23,41,56,63,82,92],"the":[7,11,50,53,72],"recent":[8],"progress":[9],"of":[10,17,44,52],"MOCVD":[12],"production":[13,61],"technology":[14,36],"for":[15,37,68],"manufacturing":[16,54,65],"wide":[18],"bandgap":[19],"semiconductor":[20],"power":[21],"device":[22],"RF":[24],"stacks.":[25],"High":[26],"throughput":[27],"processing":[28],"built":[29],"wafer":[31,90],"level":[32],"automation,":[33],"chamber":[34,39],"cleaning":[35],"reliable":[38],"resetting":[40],"in-situ":[42],"control":[43],"key":[45],"process":[46,55],"parameters":[47],"are":[48],"improving":[49],"robustness":[51],"ultimately":[57],"lead":[58],"to":[59],"higher":[60],"yield":[62],"lower":[64],"cost.":[66],"Basis":[67],"this":[69],"development":[70],"is":[71],"Planetary":[73],"Reactor\u00ae":[74],"allowing":[75],"cost-effective":[76],"multiwafer":[77],"batch":[78],"processes":[79],"150":[81],"200":[83],"mm":[84],"large":[85],"area":[86],"substrates":[87],"with":[88],"single":[89],"precision":[91],"uniformity.":[93]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}