{"id":"https://openalex.org/W2984072424","doi":"https://doi.org/10.1109/essderc.2019.8901760","title":"Comparison of modeling approaches for transistor degradation: model card adaptations vs subcircuits","display_name":"Comparison of modeling approaches for transistor degradation: model card adaptations vs subcircuits","publication_year":2019,"publication_date":"2019-09-01","ids":{"openalex":"https://openalex.org/W2984072424","doi":"https://doi.org/10.1109/essderc.2019.8901760","mag":"2984072424"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2019.8901760","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2019.8901760","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"http://publica.fraunhofer.de/documents/N-561809.html","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5043471671","display_name":"Andr\u00e9 Lange","orcid":"https://orcid.org/0000-0003-2073-6624"},"institutions":[{"id":"https://openalex.org/I4210095661","display_name":"Fraunhofer Institute for Integrated Circuits IIS, Division Engineering of Adaptive Systems EAS","ror":"https://ror.org/00s5yp124","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210095661","https://openalex.org/I4210124274","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"Andr\u00e9 Lange","raw_affiliation_strings":["Fraunhofer Institute for Integrated Circuits IIS,Division Engineering of Adaptive Systems EAS,Dresden,Germany","Division Engineering of Adaptive Systems EAS, Fraunhofer Institute for Integrated Circuits IIS, Dresden, Germany"],"affiliations":[{"raw_affiliation_string":"Fraunhofer Institute for Integrated Circuits IIS,Division Engineering of Adaptive Systems EAS,Dresden,Germany","institution_ids":["https://openalex.org/I4210095661"]},{"raw_affiliation_string":"Division Engineering of Adaptive Systems EAS, Fraunhofer Institute for Integrated Circuits IIS, Dresden, Germany","institution_ids":["https://openalex.org/I4210095661"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022912102","display_name":"Fabio A. Velarde Gonzalez","orcid":"https://orcid.org/0000-0001-6401-5461"},"institutions":[{"id":"https://openalex.org/I4210095661","display_name":"Fraunhofer Institute for Integrated Circuits IIS, Division Engineering of Adaptive Systems EAS","ror":"https://ror.org/00s5yp124","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210095661","https://openalex.org/I4210124274","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Fabio A. Velarde Gonzalez","raw_affiliation_strings":["Fraunhofer Institute for Integrated Circuits IIS,Division Engineering of Adaptive Systems EAS,Dresden,Germany","Division Engineering of Adaptive Systems EAS, Fraunhofer Institute for Integrated Circuits IIS, Dresden, Germany"],"affiliations":[{"raw_affiliation_string":"Fraunhofer Institute for Integrated Circuits IIS,Division Engineering of Adaptive Systems EAS,Dresden,Germany","institution_ids":["https://openalex.org/I4210095661"]},{"raw_affiliation_string":"Division Engineering of Adaptive Systems EAS, Fraunhofer Institute for Integrated Circuits IIS, Dresden, Germany","institution_ids":["https://openalex.org/I4210095661"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071919355","display_name":"Insaf Lahbib","orcid":null},"institutions":[{"id":"https://openalex.org/I4210113338","display_name":"Centre Hospitalier Sud Francilien","ror":"https://ror.org/0246mbd04","country_code":"FR","type":"healthcare","lineage":["https://openalex.org/I4210113338"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Insaf Lahbib","raw_affiliation_strings":["X-FAB France SAS,Corbeil-Essonnes Cedex,France","X-FAB France SAS, Corbeil-Essonnes Cedex, France"],"affiliations":[{"raw_affiliation_string":"X-FAB France SAS,Corbeil-Essonnes Cedex,France","institution_ids":["https://openalex.org/I4210113338"]},{"raw_affiliation_string":"X-FAB France SAS, Corbeil-Essonnes Cedex, France","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5052132162","display_name":"Sonja Crocoll","orcid":null},"institutions":[{"id":"https://openalex.org/I2799978770","display_name":"X-Fab (Germany)","ror":"https://ror.org/030bh9196","country_code":"DE","type":"company","lineage":["https://openalex.org/I2799978770"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Sonja Crocoll","raw_affiliation_strings":["X-FAB Dresden GmbH & Co. KG,Dresden,Germany","X-FAB Dresden GmbH & Co. KG, Dresden, Germany"],"affiliations":[{"raw_affiliation_string":"X-FAB Dresden GmbH & Co. KG,Dresden,Germany","institution_ids":["https://openalex.org/I2799978770"]},{"raw_affiliation_string":"X-FAB Dresden GmbH & Co. KG, Dresden, Germany","institution_ids":["https://openalex.org/I2799978770"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5043471671"],"corresponding_institution_ids":["https://openalex.org/I4210095661"],"apc_list":null,"apc_paid":null,"fwci":0.484,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.66554008,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"186","last_page":"189"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9976999759674072,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.7079355716705322},{"id":"https://openalex.org/keywords/bottleneck","display_name":"Bottleneck","score":0.6626399755477905},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6513069868087769},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5930019617080688},{"id":"https://openalex.org/keywords/electronic-design-automation","display_name":"Electronic design automation","score":0.5617187023162842},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.5337548851966858},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.5201519131660461},{"id":"https://openalex.org/keywords/circuit-reliability","display_name":"Circuit reliability","score":0.4771035313606262},{"id":"https://openalex.org/keywords/transient","display_name":"Transient (computer programming)","score":0.45328524708747864},{"id":"https://openalex.org/keywords/automation","display_name":"Automation","score":0.41995713114738464},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3551860451698303},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.3538007438182831},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.3533632755279541},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.22496935725212097},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.22130009531974792},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.18014511466026306},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.11519253253936768}],"concepts":[{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.7079355716705322},{"id":"https://openalex.org/C2780513914","wikidata":"https://www.wikidata.org/wiki/Q18210350","display_name":"Bottleneck","level":2,"score":0.6626399755477905},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6513069868087769},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5930019617080688},{"id":"https://openalex.org/C64260653","wikidata":"https://www.wikidata.org/wiki/Q1194864","display_name":"Electronic design automation","level":2,"score":0.5617187023162842},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.5337548851966858},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.5201519131660461},{"id":"https://openalex.org/C2778309119","wikidata":"https://www.wikidata.org/wiki/Q5121614","display_name":"Circuit reliability","level":4,"score":0.4771035313606262},{"id":"https://openalex.org/C2780799671","wikidata":"https://www.wikidata.org/wiki/Q17087362","display_name":"Transient (computer programming)","level":2,"score":0.45328524708747864},{"id":"https://openalex.org/C115901376","wikidata":"https://www.wikidata.org/wiki/Q184199","display_name":"Automation","level":2,"score":0.41995713114738464},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3551860451698303},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.3538007438182831},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.3533632755279541},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.22496935725212097},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.22130009531974792},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.18014511466026306},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.11519253253936768},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C78519656","wikidata":"https://www.wikidata.org/wiki/Q101333","display_name":"Mechanical engineering","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/essderc.2019.8901760","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2019.8901760","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},{"id":"pmh:oai:fraunhofer.de:N-561809","is_oa":true,"landing_page_url":"http://publica.fraunhofer.de/documents/N-561809.html","pdf_url":null,"source":{"id":"https://openalex.org/S4306400801","display_name":"Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I4923324","host_organization_name":"Fraunhofer-Gesellschaft","host_organization_lineage":["https://openalex.org/I4923324"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Fraunhofer EAS","raw_type":"conferenceObject"}],"best_oa_location":{"id":"pmh:oai:fraunhofer.de:N-561809","is_oa":true,"landing_page_url":"http://publica.fraunhofer.de/documents/N-561809.html","pdf_url":null,"source":{"id":"https://openalex.org/S4306400801","display_name":"Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I4923324","host_organization_name":"Fraunhofer-Gesellschaft","host_organization_lineage":["https://openalex.org/I4923324"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Fraunhofer EAS","raw_type":"conferenceObject"},"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1988922865","https://openalex.org/W2009945983","https://openalex.org/W2086022517","https://openalex.org/W2107079616","https://openalex.org/W2157180100","https://openalex.org/W2171540755","https://openalex.org/W3209728344","https://openalex.org/W4237018314","https://openalex.org/W6803006264","https://openalex.org/W6945453912"],"related_works":["https://openalex.org/W2595172197","https://openalex.org/W2204879205","https://openalex.org/W2096437374","https://openalex.org/W2084856301","https://openalex.org/W2127970246","https://openalex.org/W1943174035","https://openalex.org/W3214257365","https://openalex.org/W2057436168","https://openalex.org/W4396689053","https://openalex.org/W2945057316"],"abstract_inverted_index":{"The":[0],"degradation":[1,56,104,125],"of":[2,48,54,63],"integrated":[3,25],"field":[4],"effect":[5,12],"transistors":[6],"(FETs)":[7],"is":[8,51],"an":[9],"increasingly":[10],"critical":[11],"for":[13,67,152],"electronic":[14,31],"systems":[15],"and":[16,73,107,117],"their":[17,85],"product":[18],"lifetimes.":[19],"To":[20,101],"allow":[21],"reliability":[22],"investigations":[23],"during":[24],"circuit":[26,156],"(IC)":[27],"design":[28,32],"already,":[29],"multiple":[30,94],"automation":[33],"(EDA)":[34],"vendors":[35],"offer":[36],"aging":[37,49],"simulation":[38,134,144],"capabilities":[39],"based":[40],"on":[41],"SPICE":[42],"simulations.":[43],"So":[44],"far,":[45],"the":[46,52,60,150,154],"bottleneck":[47],"simulations":[50],"availability":[53],"corresponding":[55],"models":[57,82,126],"that":[58,83],"mimick":[59],"long-term":[61],"behavior":[62],"FETs":[64],"due":[65],"to,":[66],"instance,":[68],"Hot":[69],"Carrier":[70],"Injection":[71],"(HCI)":[72],"Bias":[74],"Temperature":[75],"Instability":[76],"(BTI).":[77],"IC":[78],"designers":[79],"need":[80,90],"reasonable":[81],"support":[84,93],"particular":[86],"EDA":[87,95],"environment;":[88],"foundries":[89],"to":[91,97,162],"equally":[92],"environments":[96],"satisfy":[98],"different":[99],"customers.":[100],"define":[102],"FET":[103],"models,":[105,149],"subcircuits":[106],"model":[108,163],"card":[109,164],"adaptations":[110,165],"are":[111],"feasible":[112],"approaches":[113,122],"with":[114,127,136],"individual":[115],"pros":[116],"cons.":[118],"We":[119],"compare":[120],"these":[121],"at":[123,166],"example":[124],"identical":[128],"direct":[129],"current":[130],"(DC)":[131],"behavior.":[132],"A":[133],"study":[135],"ring":[137],"oscillators":[138],"(ROs)":[139],"shows":[140],"differences":[141],"in":[142],"transient":[143],"results.":[145],"By":[146],"applying":[147],"subcircuit":[148],"runtime":[151],"simulating":[153],"aged":[155],"worsens":[157],"by":[158],"28":[159],"%":[160],"compared":[161],"a":[167],"1000-transistor":[168],"circuit.":[169]},"counts_by_year":[{"year":2024,"cited_by_count":2},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":1}],"updated_date":"2026-04-04T16:13:02.066488","created_date":"2025-10-10T00:00:00"}