{"id":"https://openalex.org/W2985873902","doi":"https://doi.org/10.1109/essderc.2019.8901737","title":"The Synergy SPICE \u2013 Compact Models","display_name":"The Synergy SPICE \u2013 Compact Models","publication_year":2019,"publication_date":"2019-09-01","ids":{"openalex":"https://openalex.org/W2985873902","doi":"https://doi.org/10.1109/essderc.2019.8901737","mag":"2985873902"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2019.8901737","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2019.8901737","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5053190499","display_name":"Andrei Vladimirescu","orcid":null},"institutions":[{"id":"https://openalex.org/I95457486","display_name":"University of California, Berkeley","ror":"https://ror.org/01an7q238","country_code":"US","type":"education","lineage":["https://openalex.org/I95457486"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Andrei Vladimirescu","raw_affiliation_strings":["University of California,Berkeley,CA,USA","University of California, Berkeley, CA, USA"],"affiliations":[{"raw_affiliation_string":"University of California,Berkeley,CA,USA","institution_ids":["https://openalex.org/I95457486"]},{"raw_affiliation_string":"University of California, Berkeley, CA, USA","institution_ids":["https://openalex.org/I95457486"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5053190499"],"corresponding_institution_ids":["https://openalex.org/I95457486"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.11857413,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":95,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"182","last_page":"185"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.8352608680725098},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6804331541061401},{"id":"https://openalex.org/keywords/robustness","display_name":"Robustness (evolution)","score":0.6466875076293945},{"id":"https://openalex.org/keywords/transistor-model","display_name":"Transistor model","score":0.5392069220542908},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5078747868537903},{"id":"https://openalex.org/keywords/semiconductor-device-modeling","display_name":"Semiconductor device modeling","score":0.48119860887527466},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.468205988407135},{"id":"https://openalex.org/keywords/software","display_name":"Software","score":0.45929569005966187},{"id":"https://openalex.org/keywords/equivalent-circuit","display_name":"Equivalent circuit","score":0.41515955328941345},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.39063724875450134},{"id":"https://openalex.org/keywords/computer-engineering","display_name":"Computer engineering","score":0.3833608329296112},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.23145559430122375},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.19304737448692322},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.17204248905181885},{"id":"https://openalex.org/keywords/programming-language","display_name":"Programming language","score":0.09250041842460632}],"concepts":[{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.8352608680725098},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6804331541061401},{"id":"https://openalex.org/C63479239","wikidata":"https://www.wikidata.org/wiki/Q7353546","display_name":"Robustness (evolution)","level":3,"score":0.6466875076293945},{"id":"https://openalex.org/C150169584","wikidata":"https://www.wikidata.org/wiki/Q7834319","display_name":"Transistor model","level":4,"score":0.5392069220542908},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5078747868537903},{"id":"https://openalex.org/C4775677","wikidata":"https://www.wikidata.org/wiki/Q7449393","display_name":"Semiconductor device modeling","level":3,"score":0.48119860887527466},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.468205988407135},{"id":"https://openalex.org/C2777904410","wikidata":"https://www.wikidata.org/wiki/Q7397","display_name":"Software","level":2,"score":0.45929569005966187},{"id":"https://openalex.org/C23572009","wikidata":"https://www.wikidata.org/wiki/Q964981","display_name":"Equivalent circuit","level":3,"score":0.41515955328941345},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.39063724875450134},{"id":"https://openalex.org/C113775141","wikidata":"https://www.wikidata.org/wiki/Q428691","display_name":"Computer engineering","level":1,"score":0.3833608329296112},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.23145559430122375},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19304737448692322},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.17204248905181885},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.09250041842460632},{"id":"https://openalex.org/C104317684","wikidata":"https://www.wikidata.org/wiki/Q7187","display_name":"Gene","level":2,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc.2019.8901737","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2019.8901737","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Industry, innovation and infrastructure","id":"https://metadata.un.org/sdg/9","score":0.5699999928474426}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":2,"referenced_works":["https://openalex.org/W136812135","https://openalex.org/W2131947274"],"related_works":["https://openalex.org/W2797744477","https://openalex.org/W2018560541","https://openalex.org/W4234364140","https://openalex.org/W2118902095","https://openalex.org/W2945285759","https://openalex.org/W1972185800","https://openalex.org/W1968332896","https://openalex.org/W4399527091","https://openalex.org/W2228479887","https://openalex.org/W1670079182"],"abstract_inverted_index":{"SPICE":[0,64],"became":[1],"the":[2,25,28,32,41,63,68,98,141,145,150],"de":[3],"facto":[4],"standard":[5],"Integrated":[6],"Circuit":[7],"(IC)":[8],"design":[9],"tool":[10],"due":[11],"in":[12,44,88,103,135,140],"part":[13,143],"to":[14,56],"being":[15],"an":[16,95],"open-source":[17],"software":[18],"program":[19],"and":[20,52,72,84,111,129,132],"incorporating":[21],"mathematical":[22],"models":[23,46,102],"for":[24,49],"behavior":[26],"of":[27,34,40,62,97,100,116,144,152],"semiconductor":[29,106],"devices":[30],"at":[31],"core":[33],"ICs.":[35],"The":[36,60],"chosen":[37],"detail":[38],"level":[39],"device":[42,73,85],"equations":[43],"these":[45],"is":[47],"appropriate":[48],"circuit":[50,136],"simulation":[51,137],"they":[53],"are":[54,138],"referred":[55],"as":[57,123],"Compact":[58],"Models.":[59],"robustness":[61],"solution":[65,82],"relies":[66],"on":[67,78],"interdependency":[69],"between":[70,81],"algorithm":[71,83],"model;":[74],"first-working":[75],"silicon":[76],"depends":[77],"this":[79,156],"synergy":[80],"model":[86],"integrated":[87],"a":[89],"single":[90],"tool.":[91],"This":[92],"paper":[93],"sketches":[94],"overview":[96],"evolution":[99],"transistor":[101],"step":[104],"with":[105,109],"technology":[107],"starting":[108],"bipolar":[110],"continuing":[112],"over":[113],"several":[114],"generations":[115],"MOS":[117],"processes.":[118],"Alternate":[119],"modeling":[120,154],"approaches":[121],"such":[122],"Analog":[124],"Hardware":[125],"Description":[126],"Languages":[127],"(AHDL)":[128],"table":[130],"models,":[131],"their":[133],"role":[134],"described":[139],"latter":[142],"paper.":[146,157],"A":[147],"glance":[148],"into":[149],"future":[151],"compact":[153],"concludes":[155]},"counts_by_year":[{"year":2025,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}
