{"id":"https://openalex.org/W2985187170","doi":"https://doi.org/10.1109/essderc.2019.8901687","title":"A Novel 4H-SiC UV Photo-transistor based on a Shallow Mesa Structure","display_name":"A Novel 4H-SiC UV Photo-transistor based on a Shallow Mesa Structure","publication_year":2019,"publication_date":"2019-09-01","ids":{"openalex":"https://openalex.org/W2985187170","doi":"https://doi.org/10.1109/essderc.2019.8901687","mag":"2985187170"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2019.8901687","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2019.8901687","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5026535044","display_name":"Luigi Di Benedetto","orcid":"https://orcid.org/0000-0001-5588-0621"},"institutions":[{"id":"https://openalex.org/I131729948","display_name":"University of Salerno","ror":"https://ror.org/0192m2k53","country_code":"IT","type":"education","lineage":["https://openalex.org/I131729948"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Luigi Di Benedetto","raw_affiliation_strings":["University of Salerno,Dept. of industrial Engineering,Fisciano,Italy","Dept. of industrial Engineering, University of Salerno, Fisciano, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Salerno,Dept. of industrial Engineering,Fisciano,Italy","institution_ids":["https://openalex.org/I131729948"]},{"raw_affiliation_string":"Dept. of industrial Engineering, University of Salerno, Fisciano, Italy","institution_ids":["https://openalex.org/I131729948"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030070417","display_name":"Gian Domenico Licciardo","orcid":"https://orcid.org/0000-0002-1913-4928"},"institutions":[{"id":"https://openalex.org/I131729948","display_name":"University of Salerno","ror":"https://ror.org/0192m2k53","country_code":"IT","type":"education","lineage":["https://openalex.org/I131729948"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Gian Domenico Licciardo","raw_affiliation_strings":["University of Salerno,Dept. of industrial Engineering,Fisciano,Italy","Dept. of industrial Engineering, University of Salerno, Fisciano, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Salerno,Dept. of industrial Engineering,Fisciano,Italy","institution_ids":["https://openalex.org/I131729948"]},{"raw_affiliation_string":"Dept. of industrial Engineering, University of Salerno, Fisciano, Italy","institution_ids":["https://openalex.org/I131729948"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5044628138","display_name":"Alfredo Rubino","orcid":"https://orcid.org/0000-0002-5690-9040"},"institutions":[{"id":"https://openalex.org/I131729948","display_name":"University of Salerno","ror":"https://ror.org/0192m2k53","country_code":"IT","type":"education","lineage":["https://openalex.org/I131729948"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Alfredo Rubino","raw_affiliation_strings":["University of Salerno,Dept. of industrial Engineering,Fisciano,Italy","Dept. of industrial Engineering, University of Salerno, Fisciano, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Salerno,Dept. of industrial Engineering,Fisciano,Italy","institution_ids":["https://openalex.org/I131729948"]},{"raw_affiliation_string":"Dept. of industrial Engineering, University of Salerno, Fisciano, Italy","institution_ids":["https://openalex.org/I131729948"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I131729948"],"apc_list":null,"apc_paid":null,"fwci":1.1947,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.76051528,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"246","last_page":"249"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6842957735061646},{"id":"https://openalex.org/keywords/dark-current","display_name":"Dark current","score":0.6656650304794312},{"id":"https://openalex.org/keywords/photodiode","display_name":"Photodiode","score":0.6601864695549011},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6247814893722534},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4853031039237976},{"id":"https://openalex.org/keywords/ultraviolet","display_name":"Ultraviolet","score":0.4847249984741211},{"id":"https://openalex.org/keywords/wafer","display_name":"Wafer","score":0.4677078127861023},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.4673374593257904},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.4517849385738373},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3968474566936493},{"id":"https://openalex.org/keywords/photodetector","display_name":"Photodetector","score":0.30473390221595764},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.24946671724319458}],"concepts":[{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6842957735061646},{"id":"https://openalex.org/C180651308","wikidata":"https://www.wikidata.org/wiki/Q1265973","display_name":"Dark current","level":3,"score":0.6656650304794312},{"id":"https://openalex.org/C751236","wikidata":"https://www.wikidata.org/wiki/Q175943","display_name":"Photodiode","level":2,"score":0.6601864695549011},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6247814893722534},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4853031039237976},{"id":"https://openalex.org/C2776798109","wikidata":"https://www.wikidata.org/wiki/Q11391","display_name":"Ultraviolet","level":2,"score":0.4847249984741211},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.4677078127861023},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.4673374593257904},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.4517849385738373},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3968474566936493},{"id":"https://openalex.org/C23125352","wikidata":"https://www.wikidata.org/wiki/Q210765","display_name":"Photodetector","level":2,"score":0.30473390221595764},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.24946671724319458},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc.2019.8901687","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2019.8901687","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.41999998688697815,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":23,"referenced_works":["https://openalex.org/W602732352","https://openalex.org/W1980770847","https://openalex.org/W1997620770","https://openalex.org/W2000459404","https://openalex.org/W2021555028","https://openalex.org/W2023610622","https://openalex.org/W2026341741","https://openalex.org/W2038453119","https://openalex.org/W2056534164","https://openalex.org/W2063024648","https://openalex.org/W2067089489","https://openalex.org/W2084273054","https://openalex.org/W2105839733","https://openalex.org/W2301028451","https://openalex.org/W2314603403","https://openalex.org/W2331353102","https://openalex.org/W2339074097","https://openalex.org/W2490765418","https://openalex.org/W2577976329","https://openalex.org/W2798123073","https://openalex.org/W2895502601","https://openalex.org/W2903475324","https://openalex.org/W4245755231"],"related_works":["https://openalex.org/W4367676917","https://openalex.org/W2371692126","https://openalex.org/W2592416155","https://openalex.org/W2330272753","https://openalex.org/W3150347925","https://openalex.org/W2085640266","https://openalex.org/W2767137311","https://openalex.org/W4387019742","https://openalex.org/W2073711341","https://openalex.org/W2083301256"],"abstract_inverted_index":{"In":[0],"this":[1],"paper":[2],"we":[3],"report":[4],"the":[5,50,82,95,138,141,160,164,169],"first":[6],"experimental":[7],"results":[8],"of":[9,39,44,62,68,74,79,109,114,122,129,140,163],"a":[10,19,24,30,41,58,71,77,99,106,111],"novel":[11],"4H-polytype":[12],"Silicon":[13],"Carbide":[14],"Ultra-Violet":[15],"Photo-Transistor.":[16],"It":[17],"is":[18,117,135],"vertical":[20,86],"structure":[21],"based":[22],"on":[23],"shallow":[25],"n-type":[26],"mesa":[27],"surrounded":[28],"by":[29,159],"p-type":[31],"region.":[32],"The":[33,102,131],"device":[34],"has":[35],"an":[36,65,125],"optical":[37,66,132],"area":[38],"1.015\u202210-4cm2and":[40],"dark":[42,107],"current":[43,108],"10pA.":[45],"Under":[46],"UV":[47],"radiation":[48],"in":[49,91],"range":[51,61,113],"between":[52,145],"210nm":[53],"and":[54,64,76,124,147],"390nm,":[55],"it":[56],"shows":[57],"maximum":[59],"dynamic":[60,112],"108.5dB":[63],"gain":[67,133],"16365,":[69],"at":[70],"bias":[72],"voltage":[73],"0.5V":[75],"wavelength":[78],"310nm.":[80],"On":[81],"same":[83],"wafer,":[84],"p-i-n":[85,103],"photodiodes":[87],"are":[88,156],"also":[89],"fabricated":[90],"order":[92],"to":[93,137,151,168],"compare":[94],"photo-transistor":[96],"performances":[97],"with":[98],"reference":[100],"device.":[101],"photo-diode":[104],"showed":[105],"4pA,":[110],"42dB,":[115],"which":[116,155],"61%":[118],"lower":[119],"than":[120],"that":[121],"photo-transistor,":[123],"external":[126],"quantum":[127],"efficiency":[128],"51.3%.":[130],"mechanism":[134],"ascribed":[136],"variation":[139],"potential":[142],"barrier":[143],"height":[144],"Source":[146],"Drain":[148],"terminals":[149],"due":[150],"hole-electron":[152],"photo-generated":[153],"pairs,":[154],"efficiently":[157],"separated":[158],"electric":[161],"fields":[162],"p-n":[165],"junctions":[166],"close":[167],"lighted":[170],"surface.":[171]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}