{"id":"https://openalex.org/W2896991087","doi":"https://doi.org/10.1109/essderc.2018.8486881","title":"First and Second Order Piezoresistive Characteristics of CMOS FETs: Weak through Strong Inversion","display_name":"First and Second Order Piezoresistive Characteristics of CMOS FETs: Weak through Strong Inversion","publication_year":2018,"publication_date":"2018-09-01","ids":{"openalex":"https://openalex.org/W2896991087","doi":"https://doi.org/10.1109/essderc.2018.8486881","mag":"2896991087"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2018.8486881","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2018.8486881","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 48th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5053942504","display_name":"R.C. Jaeger","orcid":"https://orcid.org/0000-0003-1555-8894"},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Richard C. Jaeger","raw_affiliation_strings":["Electrical and Computer Engineering"],"affiliations":[{"raw_affiliation_string":"Electrical and Computer Engineering","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5036335857","display_name":"Jeffrey C. Suhling","orcid":"https://orcid.org/0000-0002-1117-6939"},"institutions":[{"id":"https://openalex.org/I82497590","display_name":"Auburn University","ror":"https://ror.org/02v80fc35","country_code":"US","type":"education","lineage":["https://openalex.org/I82497590"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jeffrey C. Suhling","raw_affiliation_strings":["Mechanical Engineering Departments, Auburn University, Alabama"],"affiliations":[{"raw_affiliation_string":"Mechanical Engineering Departments, Auburn University, Alabama","institution_ids":["https://openalex.org/I82497590"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5053942504"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.515,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.68012983,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"126","last_page":"129"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10369","display_name":"Advanced MEMS and NEMS Technologies","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/piezoresistive-effect","display_name":"Piezoresistive effect","score":0.833814263343811},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6919583678245544},{"id":"https://openalex.org/keywords/inversion","display_name":"Inversion (geology)","score":0.5788906216621399},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5093733072280884},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.47315868735313416},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.456542044878006},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4486338496208191},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3449992537498474},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.263021856546402},{"id":"https://openalex.org/keywords/geology","display_name":"Geology","score":0.19775262475013733},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.10744190216064453}],"concepts":[{"id":"https://openalex.org/C198490522","wikidata":"https://www.wikidata.org/wiki/Q1932915","display_name":"Piezoresistive effect","level":2,"score":0.833814263343811},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6919583678245544},{"id":"https://openalex.org/C1893757","wikidata":"https://www.wikidata.org/wiki/Q3653001","display_name":"Inversion (geology)","level":3,"score":0.5788906216621399},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5093733072280884},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.47315868735313416},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.456542044878006},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4486338496208191},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3449992537498474},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.263021856546402},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.19775262475013733},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.10744190216064453},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0},{"id":"https://openalex.org/C109007969","wikidata":"https://www.wikidata.org/wiki/Q749565","display_name":"Structural basin","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc.2018.8486881","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2018.8486881","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 48th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1505123860","https://openalex.org/W1506545258","https://openalex.org/W1533614470","https://openalex.org/W1968073960","https://openalex.org/W2002257666","https://openalex.org/W2035753318","https://openalex.org/W2038798773","https://openalex.org/W2061821008","https://openalex.org/W2070768625","https://openalex.org/W2081859728","https://openalex.org/W2089906032","https://openalex.org/W2094200756","https://openalex.org/W2115475919","https://openalex.org/W2130318514","https://openalex.org/W2138986421","https://openalex.org/W2171197391"],"related_works":["https://openalex.org/W2084250491","https://openalex.org/W2375562665","https://openalex.org/W2184008233","https://openalex.org/W3130958947","https://openalex.org/W1985482365","https://openalex.org/W2025294681","https://openalex.org/W2550172429","https://openalex.org/W2133784985","https://openalex.org/W2119335613","https://openalex.org/W2109445684"],"abstract_inverted_index":{"Experimental":[0],"results":[1],"validate":[2],"a":[3],"continuous":[4],"model":[5,19],"describing":[6],"the":[7,21,35,70,74],"stress":[8,36,76],"dependencies":[9],"of":[10,24,41,62,73],"CMOS":[11],"FETs":[12],"from":[13],"weak":[14],"through":[15],"strong":[16],"inversion.":[17],"The":[18],"incorporates":[20],"significant":[22],"impact":[23],"threshold":[25],"voltage":[26],"changes":[27],"(through":[28],"ni":[29],"<sup":[30],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[31],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[32],")":[33],"on":[34],"responses":[37],"in":[38],"all":[39],"regions":[40],"operation":[42],"and":[43,47,50,56],"describes":[44],"both":[45],"first-":[46],"second-order":[48],"longitudinal":[49],"traverse":[51],"piezoresistive":[52],"coefficients":[53],"for":[54],"PMOS":[55],"NMOS":[57],"devices.":[58],"Orthogonal":[59],"differential":[60],"pairs":[61],"MOSFETs":[63],"can":[64],"be":[65],"utilized":[66],"to":[67],"directly":[68],"measure":[69],"mobility":[71],"component":[72],"overall":[75],"response.":[77]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":3}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}