{"id":"https://openalex.org/W2895799512","doi":"https://doi.org/10.1109/essderc.2018.8486878","title":"Gated Four-Probe Method to Evaluate the Impact of SAM Gate Dielectric on Mobility in MoS2 FET","display_name":"Gated Four-Probe Method to Evaluate the Impact of SAM Gate Dielectric on Mobility in MoS2 FET","publication_year":2018,"publication_date":"2018-09-01","ids":{"openalex":"https://openalex.org/W2895799512","doi":"https://doi.org/10.1109/essderc.2018.8486878","mag":"2895799512"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2018.8486878","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2018.8486878","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 48th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5049888413","display_name":"Takamasa Kawanago","orcid":"https://orcid.org/0000-0001-5323-7085"},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Takamasa Kawanago","raw_affiliation_strings":["Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Tokyo, Japan"],"affiliations":[{"raw_affiliation_string":"Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Tokyo, Japan","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5053637024","display_name":"Tomoaki Oba","orcid":null},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tomoaki Oba","raw_affiliation_strings":["Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Tokyo, Japan"],"affiliations":[{"raw_affiliation_string":"Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Tokyo, Japan","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021711491","display_name":"Ryo Ikoma","orcid":null},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Ryo Ikoma","raw_affiliation_strings":["Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Tokyo, Japan"],"affiliations":[{"raw_affiliation_string":"Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Tokyo, Japan","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004971760","display_name":"Hiroyuki Takagi","orcid":"https://orcid.org/0000-0002-4999-905X"},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hiroyuki Takagi","raw_affiliation_strings":["Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Tokyo, Japan"],"affiliations":[{"raw_affiliation_string":"Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Tokyo, Japan","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5088090749","display_name":"Shunri Oda","orcid":"https://orcid.org/0000-0002-8009-2077"},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shunri Oda","raw_affiliation_strings":["Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Tokyo, Japan"],"affiliations":[{"raw_affiliation_string":"Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Tokyo, Japan","institution_ids":["https://openalex.org/I114531698"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5049888413"],"corresponding_institution_ids":["https://openalex.org/I114531698"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.09925462,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"118","last_page":"121"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.609358012676239},{"id":"https://openalex.org/keywords/molybdenum-disulfide","display_name":"Molybdenum disulfide","score":0.6087878346443176},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.5108718276023865},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.49333062767982483},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.47719821333885193},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4531058669090271},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.4497409760951996},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3733774423599243},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3355749249458313},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.3200879693031311},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.30840909481048584},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16809943318367004},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.15283989906311035}],"concepts":[{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.609358012676239},{"id":"https://openalex.org/C2780423959","wikidata":"https://www.wikidata.org/wiki/Q424257","display_name":"Molybdenum disulfide","level":2,"score":0.6087878346443176},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.5108718276023865},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.49333062767982483},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.47719821333885193},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4531058669090271},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.4497409760951996},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3733774423599243},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3355749249458313},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3200879693031311},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.30840909481048584},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16809943318367004},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.15283989906311035},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc.2018.8486878","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2018.8486878","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 48th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1661368752","https://openalex.org/W2004728577","https://openalex.org/W2021994802","https://openalex.org/W2046704339","https://openalex.org/W2086103622","https://openalex.org/W2330750820","https://openalex.org/W2490765418","https://openalex.org/W2499844158","https://openalex.org/W3147289055","https://openalex.org/W4210341450"],"related_works":["https://openalex.org/W2283712504","https://openalex.org/W2807687265","https://openalex.org/W2895652696","https://openalex.org/W3161397677","https://openalex.org/W4327744209","https://openalex.org/W2072424359","https://openalex.org/W2061674058","https://openalex.org/W2750055590","https://openalex.org/W1990516236","https://openalex.org/W1976012112"],"abstract_inverted_index":{"This":[0,87],"study":[1,88],"reports":[2],"the":[3,38,56,73,99],"impact":[4],"of":[5,10,40,48,58,93,103],"interfacial":[6,75],"engineering":[7,95],"by":[8],"means":[9],"SAM":[11,49],"(Self-assembled":[12],"monolayer)-based":[13],"gate":[14],"dielectric":[15],"on":[16,43],"channel":[17,44,59],"mobility":[18,60],"in":[19,55,70,80,98],"molybdenum":[20],"disulfide":[21],"(MoS":[22],"<sub":[23,82],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[24,67,83],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sub>":[25,84],")":[26],"field-effect":[27],"transistors":[28],"(FETs).":[29],"A":[30],"gated":[31],"four-probe":[32],"method":[33],"was":[34],"implemented":[35],"to":[36],"eliminate":[37],"effect":[39],"contact":[41],"resistance":[42],"mobility.":[45],"The":[46],"formation":[47],"significantly":[50],"plays":[51],"an":[52],"important":[53],"role":[54],"improvement":[57],"as":[61,63],"high":[62],"19":[64],"cm":[65],"<sup":[66],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[68],"/Vs":[69],"Mos2FETs":[71],"because":[72],"superior":[74],"properties":[76],"can":[77],"be":[78],"realized":[79],"MoS":[81],"/SAM":[85],"structure.":[86],"opens":[89],"up":[90],"interesting":[91],"direction":[92],"interface":[94],"for":[96],"research":[97],"applications":[100],"and":[101],"developments":[102],"2-dimensional":[104],"materials-based":[105],"thin":[106],"film":[107],"devices.":[108]},"counts_by_year":[{"year":2025,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}