{"id":"https://openalex.org/W2898019831","doi":"https://doi.org/10.1109/essderc.2018.8486862","title":"InGaAs FinFETs 3D Sequentially Integrated on FDSOI Si CMOS with Record Perfomance","display_name":"InGaAs FinFETs 3D Sequentially Integrated on FDSOI Si CMOS with Record Perfomance","publication_year":2018,"publication_date":"2018-09-01","ids":{"openalex":"https://openalex.org/W2898019831","doi":"https://doi.org/10.1109/essderc.2018.8486862","mag":"2898019831"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2018.8486862","doi":"https://doi.org/10.1109/essderc.2018.8486862","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2018.8486862","pdf_url":null,"source":{"id":"https://openalex.org/S4306418380","display_name":"European Solid-State Device Research Conference","issn_l":"1930-8876","issn":["1930-8876","2378-6558"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["jufo-1","norway-1"],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 48th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5086429191","display_name":"Clarissa Convertino","orcid":"https://orcid.org/0000-0002-7842-6066","observed_orcids":["https://orcid.org/0000-0002-7842-6066"]},"institutions":[{"id":"https://openalex.org/I4210126328","display_name":"IBM Research - Zurich","ror":"https://ror.org/02js37d36","country_code":"CH","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210126328"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"C. Convertino","raw_affiliation_strings":["IBM Research Zurich, Ruschlikon, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Research Zurich, Ruschlikon, Switzerland","institution_ids":["https://openalex.org/I4210126328"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5058035943","display_name":"Cezar B. Zota","orcid":"https://orcid.org/0000-0001-6843-2131","observed_orcids":["https://orcid.org/0000-0001-6843-2131"]},"institutions":[{"id":"https://openalex.org/I4210126328","display_name":"IBM Research - Zurich","ror":"https://ror.org/02js37d36","country_code":"CH","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210126328"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"C. B. Zota","raw_affiliation_strings":["IBM Research Zurich, Ruschlikon, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Research Zurich, Ruschlikon, Switzerland","institution_ids":["https://openalex.org/I4210126328"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067104396","display_name":"Daniele Caimi","orcid":"https://orcid.org/0009-0001-4712-4735","observed_orcids":["https://orcid.org/0009-0001-4712-4735"]},"institutions":[{"id":"https://openalex.org/I4210126328","display_name":"IBM Research - Zurich","ror":"https://ror.org/02js37d36","country_code":"CH","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210126328"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"D. Caimi","raw_affiliation_strings":["IBM Research Zurich, Ruschlikon, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Research Zurich, Ruschlikon, Switzerland","institution_ids":["https://openalex.org/I4210126328"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082878452","display_name":"M. Sousa","orcid":"https://orcid.org/0000-0001-8480-2841","observed_orcids":["https://orcid.org/0000-0001-8480-2841"]},"institutions":[{"id":"https://openalex.org/I4210126328","display_name":"IBM Research - Zurich","ror":"https://ror.org/02js37d36","country_code":"CH","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210126328"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"M. Sousa","raw_affiliation_strings":["IBM Research Zurich, Ruschlikon, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Research Zurich, Ruschlikon, Switzerland","institution_ids":["https://openalex.org/I4210126328"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5078239385","display_name":"Lukas Czornomaz","orcid":"https://orcid.org/0000-0002-2239-6961","observed_orcids":["https://orcid.org/0000-0002-2239-6961"]},"institutions":[{"id":"https://openalex.org/I4210126328","display_name":"IBM Research - Zurich","ror":"https://ror.org/02js37d36","country_code":"CH","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210126328"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"L. Czornomaz","raw_affiliation_strings":["IBM Research Zurich, Ruschlikon, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Research Zurich, Ruschlikon, Switzerland","institution_ids":["https://openalex.org/I4210126328"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4210126328"],"apc_list":null,"apc_paid":null,"fwci":3.9882,"has_fulltext":false,"cited_by_count":12,"citation_normalized_percentile":{"value":0.95026891,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"162","last_page":"165"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9541000127792358,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9541000127792358,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":0.017400000244379044,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.015300000086426735,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/fully-depleted-silicon-on-insulator","display_name":"fully depleted silicon-on-insulator","score":0.7950000166893005},{"id":"https://openalex.org/keywords/iii-v-on-silicon","display_name":"III-V on silicon","score":0.7200000286102295},{"id":"https://openalex.org/keywords/low-thermal-budget","display_name":"low thermal budget","score":0.6510000228881836},{"id":"https://openalex.org/keywords/drive-current","display_name":"drive current","score":0.4300000071525574},{"id":"https://openalex.org/keywords/direct-wafer-bonding","display_name":"direct wafer bonding","score":0.8309999704360962},{"id":"https://openalex.org/keywords/cmos-compatible-fabrication","display_name":"CMOS-compatible fabrication","score":0.37700000405311584}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.707554280757904},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.5810210704803467},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.5745817422866821},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5336620807647705},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5249454975128174},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5175501704216003},{"id":"https://openalex.org/C51140833","wikidata":"https://www.wikidata.org/wiki/Q6822740","display_name":"Metal gate","level":5,"score":0.4657263159751892},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.42219170928001404},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3416535258293152},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3004642724990845},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1608593463897705},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.15967229008674622},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.1351967453956604},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.07290655374526978}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc.2018.8486862","doi":"https://doi.org/10.1109/essderc.2018.8486862","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2018.8486862","pdf_url":null,"source":{"id":"https://openalex.org/S4306418380","display_name":"European Solid-State Device Research Conference","issn_l":"1930-8876","issn":["1930-8876","2378-6558"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["jufo-1","norway-1"],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 48th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"sustainable_development_goals_aurora":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":20,"referenced_works":["https://openalex.org/W1528036291","https://openalex.org/W1560950418","https://openalex.org/W1792454508","https://openalex.org/W1989826997","https://openalex.org/W2026207815","https://openalex.org/W2163761774","https://openalex.org/W2275945693","https://openalex.org/W2288849952","https://openalex.org/W2525029816","https://openalex.org/W2743681819","https://openalex.org/W2745182898","https://openalex.org/W2765238279","https://openalex.org/W2785411521","https://openalex.org/W2785970204","https://openalex.org/W2786860980","https://openalex.org/W2787438330","https://openalex.org/W6747874253","https://openalex.org/W6747909744","https://openalex.org/W6748124179","https://openalex.org/W6748550047"],"related_works":["https://openalex.org/W2104300577","https://openalex.org/W4206445530","https://openalex.org/W2771786520","https://openalex.org/W2001476809","https://openalex.org/W2095990703","https://openalex.org/W1921407827","https://openalex.org/W2146341803","https://openalex.org/W2111229858","https://openalex.org/W2501578203","https://openalex.org/W2113108952"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"we":[3],"demonstrate":[4],"InGaAs":[5],"FinFETs":[6],"3D":[7],"sequentially":[8],"(3DS)":[9],"integrated":[10,71],"on":[11,74],"top":[12,44],"of":[13,42,51,58,82,97],"a":[14,25,79],"fully-depleted":[15],"silicon-on-insulator":[16],"CMOS.":[17],"Top":[18],"layer":[19,45],"III-V":[20,72],"FETs":[21,73],"are":[22],"fabricated":[23],"using":[24],"Si":[26],"CMOS":[27],"compatible":[28],"HKMG":[29],"replacement":[30],"gate":[31,102],"flow":[32],"and":[33,65],"self-aligned":[34],"raised":[35],"source-drain":[36],"regrowth.":[37],"The":[38,87],"low":[39],"thermal":[40],"budget":[41],"the":[43,52,95,101,109],"process":[46],"caused":[47],"no":[48],"performance":[49,90],"degradation":[50],"lower":[53],"level":[54],"FETs.":[55],"Record":[56],"ION":[57],"200":[59],"\u03bcA/\u03bcm":[60],"(at":[61],"IOFF=":[62],"100":[63],"nA/\u03bcm":[64],"VDD=":[66],"0.5":[67],"V)":[68],"for":[69],"3DS":[70],"silicon":[75],"is":[76],"demonstrated,":[77],"with":[78],"50%":[80],"reduction":[81],"RONcompared":[83],"to":[84,94],"previous":[85],"work.":[86],"achieved":[88],"improved":[89],"can":[91],"be":[92],"attributed":[93],"introduction":[96],"doped":[98],"extensions":[99],"underneath":[100],"region":[103],"as":[104,106],"well":[105],"improvements":[107],"in":[108],"direct":[110],"wafer":[111],"bonding":[112],"technique.":[113]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":6},{"year":2018,"cited_by_count":1}],"updated_date":"2026-10-06T10:28:23.643775","created_date":"2025-10-10T00:00:00"}