{"id":"https://openalex.org/W2763234660","doi":"https://doi.org/10.1109/essderc.2017.8066652","title":"In-depth electrical characterization of carrier transport in ambipolar Si-NW Schottky-barrier FETs","display_name":"In-depth electrical characterization of carrier transport in ambipolar Si-NW Schottky-barrier FETs","publication_year":2017,"publication_date":"2017-09-01","ids":{"openalex":"https://openalex.org/W2763234660","doi":"https://doi.org/10.1109/essderc.2017.8066652","mag":"2763234660"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2017.8066652","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2017.8066652","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 47th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5069631852","display_name":"Dae\u2010Young Jeon","orcid":"https://orcid.org/0000-0002-3781-8514"},"institutions":[{"id":"https://openalex.org/I78650965","display_name":"Technische Universit\u00e4t Dresden","ror":"https://ror.org/042aqky30","country_code":"DE","type":"education","lineage":["https://openalex.org/I78650965"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"Dae-Young Jeon","raw_affiliation_strings":["Technische Universitat Dresden, Dresden, Sachsen, DE"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Technische Universitat Dresden, Dresden, Sachsen, DE","institution_ids":["https://openalex.org/I78650965"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087145042","display_name":"Tim Baldau","orcid":null},"institutions":[{"id":"https://openalex.org/I4210165059","display_name":"Hochschule f\u00fcr Technik und Wirtschaft Dresden \u2013 University of Applied Sciences","ror":"https://ror.org/05q5pk319","country_code":"DE","type":"education","lineage":["https://openalex.org/I4210165059"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Tim Baldau","raw_affiliation_strings":["University of Applied Sciences Dresden, Friedrich-List-Platz 1, 01069 Dresden, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Applied Sciences Dresden, Friedrich-List-Platz 1, 01069 Dresden, Germany","institution_ids":["https://openalex.org/I4210165059"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101647024","display_name":"So Jeong Park","orcid":"https://orcid.org/0000-0002-5431-7690"},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]},{"id":"https://openalex.org/I78650965","display_name":"Technische Universit\u00e4t Dresden","ror":"https://ror.org/042aqky30","country_code":"DE","type":"education","lineage":["https://openalex.org/I78650965"]}],"countries":["DE","KR"],"is_corresponding":false,"raw_author_name":"So Jeong Park","raw_affiliation_strings":["Center for Advancing Electronics Dresden (CfAED), Dresden, Germany","Chair of Nanoelectronic Materials, TU Dresden, Dresden, Germany","School of Electrical Engineering, Korea University, Seoul, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Advancing Electronics Dresden (CfAED), Dresden, Germany","institution_ids":[]},{"raw_affiliation_string":"Chair of Nanoelectronic Materials, TU Dresden, Dresden, Germany","institution_ids":["https://openalex.org/I78650965"]},{"raw_affiliation_string":"School of Electrical Engineering, Korea University, Seoul, Korea","institution_ids":["https://openalex.org/I197347611"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005120468","display_name":"Sebastian Pregi","orcid":null},"institutions":[{"id":"https://openalex.org/I4210122489","display_name":"NaMLab (Germany)","ror":"https://ror.org/028070c57","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210122489","https://openalex.org/I78650965"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Sebastian Pregi","raw_affiliation_strings":["Namlab gGmbH, Noethnitzer Strasse 64, 01187 Dresden, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Namlab gGmbH, Noethnitzer Strasse 64, 01187 Dresden, Germany","institution_ids":["https://openalex.org/I4210122489"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067493852","display_name":"Larysa Baraban","orcid":"https://orcid.org/0000-0003-1010-2791"},"institutions":[{"id":"https://openalex.org/I4210107560","display_name":"Max Bergmann Zentrum f\u00fcr Biomaterialien","ror":"https://ror.org/01t4pzq33","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210107560"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Larysa Baraban","raw_affiliation_strings":["Institute for Materials Science and Max Bergmann Center of Biomaterials, Dresden, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Materials Science and Max Bergmann Center of Biomaterials, Dresden, Germany","institution_ids":["https://openalex.org/I4210107560"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018823387","display_name":"Gianaurelio Cuniberti","orcid":"https://orcid.org/0000-0002-6574-7848"},"institutions":[{"id":"https://openalex.org/I4210107560","display_name":"Max Bergmann Zentrum f\u00fcr Biomaterialien","ror":"https://ror.org/01t4pzq33","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210107560"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Gianaurelio Cuniberti","raw_affiliation_strings":["Institute for Materials Science and Max Bergmann Center of Biomaterials, Dresden, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Materials Science and Max Bergmann Center of Biomaterials, Dresden, Germany","institution_ids":["https://openalex.org/I4210107560"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003850300","display_name":"Thomas Mikolajick","orcid":"https://orcid.org/0000-0003-3814-0378"},"institutions":[{"id":"https://openalex.org/I78650965","display_name":"Technische Universit\u00e4t Dresden","ror":"https://ror.org/042aqky30","country_code":"DE","type":"education","lineage":["https://openalex.org/I78650965"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Thomas Mikolajick","raw_affiliation_strings":["Center for Advancing Electronics Dresden (CfAED), Dresden, Germany","Chair of Nanoelectronic Materials, TU Dresden, Dresden, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Advancing Electronics Dresden (CfAED), Dresden, Germany","institution_ids":[]},{"raw_affiliation_string":"Chair of Nanoelectronic Materials, TU Dresden, Dresden, Germany","institution_ids":["https://openalex.org/I78650965"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101914544","display_name":"W. Weber","orcid":"https://orcid.org/0000-0001-9504-5671"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Walter M. Weber","raw_affiliation_strings":["Center for Advancing Electronics Dresden (CfAED), Dresden, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Advancing Electronics Dresden (CfAED), Dresden, Germany","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":8,"corresponding_author_ids":["https://openalex.org/A5069631852"],"corresponding_institution_ids":["https://openalex.org/I78650965"],"apc_list":null,"apc_paid":null,"fwci":0.1461,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.52619778,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"304","last_page":"307"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ambipolar-diffusion","display_name":"Ambipolar diffusion","score":0.9315428733825684},{"id":"https://openalex.org/keywords/thermionic-emission","display_name":"Thermionic emission","score":0.7733012437820435},{"id":"https://openalex.org/keywords/schottky-barrier","display_name":"Schottky barrier","score":0.6160718202590942},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5883589386940002},{"id":"https://openalex.org/keywords/schottky-diode","display_name":"Schottky diode","score":0.5532684326171875},{"id":"https://openalex.org/keywords/transconductance","display_name":"Transconductance","score":0.5255495309829712},{"id":"https://openalex.org/keywords/charge-carrier","display_name":"Charge carrier","score":0.520691990852356},{"id":"https://openalex.org/keywords/activation-energy","display_name":"Activation energy","score":0.48305660486221313},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.48290562629699707},{"id":"https://openalex.org/keywords/nanowire","display_name":"Nanowire","score":0.4494127035140991},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.35786181688308716},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2699686884880066},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.24497193098068237},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.24347397685050964},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.2236039936542511},{"id":"https://openalex.org/keywords/electron","display_name":"Electron","score":0.1956976354122162},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.16247773170471191},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.15796202421188354},{"id":"https://openalex.org/keywords/physical-chemistry","display_name":"Physical chemistry","score":0.09564602375030518}],"concepts":[{"id":"https://openalex.org/C25621703","wikidata":"https://www.wikidata.org/wiki/Q2658857","display_name":"Ambipolar diffusion","level":3,"score":0.9315428733825684},{"id":"https://openalex.org/C143979616","wikidata":"https://www.wikidata.org/wiki/Q215259","display_name":"Thermionic emission","level":3,"score":0.7733012437820435},{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.6160718202590942},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5883589386940002},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.5532684326171875},{"id":"https://openalex.org/C2779283907","wikidata":"https://www.wikidata.org/wiki/Q1632964","display_name":"Transconductance","level":4,"score":0.5255495309829712},{"id":"https://openalex.org/C104232198","wikidata":"https://www.wikidata.org/wiki/Q865807","display_name":"Charge carrier","level":2,"score":0.520691990852356},{"id":"https://openalex.org/C95121573","wikidata":"https://www.wikidata.org/wiki/Q190474","display_name":"Activation energy","level":2,"score":0.48305660486221313},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.48290562629699707},{"id":"https://openalex.org/C74214498","wikidata":"https://www.wikidata.org/wiki/Q631739","display_name":"Nanowire","level":2,"score":0.4494127035140991},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.35786181688308716},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2699686884880066},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.24497193098068237},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.24347397685050964},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2236039936542511},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.1956976354122162},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.16247773170471191},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.15796202421188354},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.09564602375030518},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc.2017.8066652","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2017.8066652","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 47th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8799999952316284}],"awards":[],"funders":[{"id":"https://openalex.org/F4320320879","display_name":"Deutsche Forschungsgemeinschaft","ror":"https://ror.org/018mejw64"},{"id":"https://openalex.org/F4320322120","display_name":"National Research Foundation of Korea","ror":"https://ror.org/013aysd81"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":20,"referenced_works":["https://openalex.org/W109349899","https://openalex.org/W1937073818","https://openalex.org/W1970715657","https://openalex.org/W1983911515","https://openalex.org/W2011048979","https://openalex.org/W2042135950","https://openalex.org/W2055215434","https://openalex.org/W2106659230","https://openalex.org/W2155874961","https://openalex.org/W2239257735","https://openalex.org/W2312503676","https://openalex.org/W2322754293","https://openalex.org/W2460652912","https://openalex.org/W2490765418","https://openalex.org/W2563090476","https://openalex.org/W2563335932","https://openalex.org/W2571216142","https://openalex.org/W2585170447","https://openalex.org/W2587608034","https://openalex.org/W2604331928"],"related_works":["https://openalex.org/W2802925087","https://openalex.org/W2124225698","https://openalex.org/W3199429912","https://openalex.org/W4311808571","https://openalex.org/W2514525159","https://openalex.org/W1543523968","https://openalex.org/W2134483895","https://openalex.org/W1969486061","https://openalex.org/W2008865998","https://openalex.org/W1970758944"],"abstract_inverted_index":{"In":[0],"this":[1],"paper":[2],"the":[3,30,52,95],"operation":[4,97],"mechanism":[5,28,48],"of":[6,34,99],"ambipolar":[7,35,100],"Si-nanowire":[8],"(Si-NW)":[9],"Schottky-barrier":[10],"(SB)":[11],"FETs":[12],"is":[13,65],"discussed":[14],"in":[15,51],"detail":[16],"using":[17],"temperature":[18],"dependent":[19,73],"current-voltage":[20],"(I-V)":[21],"contour":[22],"maps.":[23],"Thermionic":[24],"and":[25,83],"field":[26],"emission":[27],"limited":[29],"overall":[31],"conduction":[32],"behavior":[33],"Si-NW":[36,101],"SB-FETs":[37],"with":[38,45,67],"considerable":[39],"SB-height.":[40],"However,":[41],"Si-channel":[42],"dominant":[43],"transports":[44],"phonon":[46],"scattering":[47],"occur":[49],"even":[50],"SB":[53],"based":[54],"device":[55],"at":[56],"a":[57,68],"specific":[58],"bias":[59],"condition,":[60],"where":[61],"charge":[62],"carrier":[63],"injection":[64],"saturated":[66],"very":[69],"thinned":[70],"SB.":[71],"Temperature":[72],"transconductance":[74],"(g":[75],"<sub":[76,88],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[77,89],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">m</sub>":[78],")":[79],"behavior,":[80],"TCAD":[81],"simulation":[82],"extracted":[84],"activation":[85],"energy":[86],"(E":[87],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">a</sub>":[90],"e)":[91],"maps":[92],"also":[93],"support":[94],"explained":[96],"principle":[98],"SB-FETs.":[102]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":2},{"year":2019,"cited_by_count":1}],"updated_date":"2026-05-07T13:39:58.223016","created_date":"2025-10-10T00:00:00"}