{"id":"https://openalex.org/W2761861423","doi":"https://doi.org/10.1109/essderc.2017.8066637","title":"Hybrid InGaAs/SiGe CMOS circuits with 2D and 3D monolithic integration","display_name":"Hybrid InGaAs/SiGe CMOS circuits with 2D and 3D monolithic integration","publication_year":2017,"publication_date":"2017-09-01","ids":{"openalex":"https://openalex.org/W2761861423","doi":"https://doi.org/10.1109/essderc.2017.8066637","mag":"2761861423"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2017.8066637","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2017.8066637","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 47th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5060135252","display_name":"Veeresh Deshpande","orcid":"https://orcid.org/0000-0002-0349-4857"},"institutions":[{"id":"https://openalex.org/I4210126328","display_name":"IBM Research - Zurich","ror":"https://ror.org/02js37d36","country_code":"CH","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210126328"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"V. Deshpande","raw_affiliation_strings":["IBM Zurich Research Laboratory, Rueschlikon, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Zurich Research Laboratory, Rueschlikon, Switzerland","institution_ids":["https://openalex.org/I4210126328"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049639179","display_name":"H. Hahn","orcid":"https://orcid.org/0000-0003-4680-0153"},"institutions":[{"id":"https://openalex.org/I4210126328","display_name":"IBM Research - Zurich","ror":"https://ror.org/02js37d36","country_code":"CH","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210126328"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"H. Hahn","raw_affiliation_strings":["IBM Zurich Research Laboratory, Rueschlikon, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Zurich Research Laboratory, Rueschlikon, Switzerland","institution_ids":["https://openalex.org/I4210126328"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5091246814","display_name":"Vladimir Djara","orcid":"https://orcid.org/0000-0003-0023-6171"},"institutions":[{"id":"https://openalex.org/I4210126328","display_name":"IBM Research - Zurich","ror":"https://ror.org/02js37d36","country_code":"CH","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210126328"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"V. Djara","raw_affiliation_strings":["IBM Zurich Research Laboratory, Rueschlikon, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Zurich Research Laboratory, Rueschlikon, Switzerland","institution_ids":["https://openalex.org/I4210126328"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046879777","display_name":"Eileen O\u2019Connor","orcid":"https://orcid.org/0009-0006-6699-8733"},"institutions":[{"id":"https://openalex.org/I4210126328","display_name":"IBM Research - Zurich","ror":"https://ror.org/02js37d36","country_code":"CH","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210126328"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"E. O'Connor","raw_affiliation_strings":["IBM Zurich Research Laboratory, Zurich, Z\u00c3\u00bcrich, CH","IBM Zurich Research Laboratory, Zurich, Z\u00fcrich, CH"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Zurich Research Laboratory, Zurich, Z\u00c3\u00bcrich, CH","institution_ids":["https://openalex.org/I4210126328"]},{"raw_affiliation_string":"IBM Zurich Research Laboratory, Zurich, Z\u00fcrich, CH","institution_ids":["https://openalex.org/I4210126328"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067104396","display_name":"Daniele Caimi","orcid":null},"institutions":[{"id":"https://openalex.org/I4210126328","display_name":"IBM Research - Zurich","ror":"https://ror.org/02js37d36","country_code":"CH","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210126328"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"D. Caimi","raw_affiliation_strings":["IBM Zurich Research Laboratory, Rueschlikon, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Zurich Research Laboratory, Rueschlikon, Switzerland","institution_ids":["https://openalex.org/I4210126328"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082878452","display_name":"M. Sousa","orcid":"https://orcid.org/0000-0001-8480-2841"},"institutions":[{"id":"https://openalex.org/I4210126328","display_name":"IBM Research - Zurich","ror":"https://ror.org/02js37d36","country_code":"CH","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210126328"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"M. Sousa","raw_affiliation_strings":["IBM Zurich Research Laboratory, Rueschlikon, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Zurich Research Laboratory, Rueschlikon, Switzerland","institution_ids":["https://openalex.org/I4210126328"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074033253","display_name":"J. Fompeyrine","orcid":"https://orcid.org/0000-0002-3528-4758"},"institutions":[{"id":"https://openalex.org/I4210126328","display_name":"IBM Research - Zurich","ror":"https://ror.org/02js37d36","country_code":"CH","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210126328"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"J. Fompeyrine","raw_affiliation_strings":["IBM Zurich Research Laboratory, Rueschlikon, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Zurich Research Laboratory, Rueschlikon, Switzerland","institution_ids":["https://openalex.org/I4210126328"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5078239385","display_name":"Lukas Czornomaz","orcid":"https://orcid.org/0000-0002-2239-6961"},"institutions":[{"id":"https://openalex.org/I4210126328","display_name":"IBM Research - Zurich","ror":"https://ror.org/02js37d36","country_code":"CH","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210126328"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"L. Czornomaz","raw_affiliation_strings":["IBM Zurich Research Laboratory, Rueschlikon, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Zurich Research Laboratory, Rueschlikon, Switzerland","institution_ids":["https://openalex.org/I4210126328"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4210126328"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.13507388,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"106","issue":null,"first_page":"244","last_page":"247"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7946279048919678},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6536027193069458},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5728524923324585},{"id":"https://openalex.org/keywords/scalability","display_name":"Scalability","score":0.5106831192970276},{"id":"https://openalex.org/keywords/indium-gallium-arsenide","display_name":"Indium gallium arsenide","score":0.4376636743545532},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.43601056933403015},{"id":"https://openalex.org/keywords/silicon-germanium","display_name":"Silicon-germanium","score":0.4203704595565796},{"id":"https://openalex.org/keywords/planar","display_name":"Planar","score":0.41917306184768677},{"id":"https://openalex.org/keywords/gallium-arsenide","display_name":"Gallium arsenide","score":0.39958328008651733},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3816869258880615},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3670646548271179},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.24060991406440735},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1968131959438324},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.19004222750663757}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7946279048919678},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6536027193069458},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5728524923324585},{"id":"https://openalex.org/C48044578","wikidata":"https://www.wikidata.org/wiki/Q727490","display_name":"Scalability","level":2,"score":0.5106831192970276},{"id":"https://openalex.org/C2779769603","wikidata":"https://www.wikidata.org/wiki/Q2618059","display_name":"Indium gallium arsenide","level":3,"score":0.4376636743545532},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.43601056933403015},{"id":"https://openalex.org/C2780389399","wikidata":"https://www.wikidata.org/wiki/Q367849","display_name":"Silicon-germanium","level":3,"score":0.4203704595565796},{"id":"https://openalex.org/C134786449","wikidata":"https://www.wikidata.org/wiki/Q3391255","display_name":"Planar","level":2,"score":0.41917306184768677},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.39958328008651733},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3816869258880615},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3670646548271179},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.24060991406440735},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1968131959438324},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.19004222750663757},{"id":"https://openalex.org/C77088390","wikidata":"https://www.wikidata.org/wiki/Q8513","display_name":"Database","level":1,"score":0.0},{"id":"https://openalex.org/C121684516","wikidata":"https://www.wikidata.org/wiki/Q7600677","display_name":"Computer graphics (images)","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc.2017.8066637","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2017.8066637","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 47th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":2,"referenced_works":["https://openalex.org/W1984772856","https://openalex.org/W2275945693"],"related_works":["https://openalex.org/W2314105963","https://openalex.org/W3138240700","https://openalex.org/W4401935158","https://openalex.org/W2899510081","https://openalex.org/W3023883798","https://openalex.org/W3169342982","https://openalex.org/W2474959077","https://openalex.org/W2077186442","https://openalex.org/W2038782838","https://openalex.org/W2491137723"],"abstract_inverted_index":{"Advanced":[0],"CMOS":[1,49,83,107],"nodes":[2],"target":[3],"high-performance":[4],"at":[5],"lower":[6],"supply":[7],"voltage.":[8],"High-mobility":[9],"III-V":[10,21],"channel":[11],"materials":[12,22,65],"have":[13],"the":[14],"potential":[15],"to":[16,61],"meet":[17],"this":[18,71],"target.":[19],"Although":[20],"such":[23],"as":[24],"InGaAs":[25],"are":[26,58],"beneficial":[27],"for":[28,42,54,91,106],"nFET":[29],"channels,":[30],"SiGe":[31],"(or":[32],"Ge)":[33],"provides":[34],"better":[35],"hole":[36],"mobility":[37],"and":[38,108],"is":[39,51],"more":[40],"suited":[41],"pFET":[43],"channels.":[44],"Therefore,":[45],"a":[46,67,86],"InGaAs/SiGe":[47,82],"hybrid":[48],"technology":[50],"being":[52],"pursued":[53],"scaled":[55],"nodes.":[56],"There":[57],"significant":[59],"challenges":[60],"cointegrate":[62],"these":[63],"two":[64],"in":[66,81,100],"scalable":[68],"process.":[69],"In":[70],"regard,":[72],"here,":[73],"we":[74],"present":[75,97],"some":[76],"of":[77,104],"our":[78,98],"recent":[79],"work":[80],"integration":[84,103],"through":[85],"novel":[87],"direct":[88],"epitaxy":[89],"process":[90],"co-planar":[92],"2D":[93],"integration.":[94],"We":[95],"also":[96],"efforts":[99],"3D":[101],"monolithic":[102],"InGaAs-on-SiGe":[105],"beyond.":[109]},"counts_by_year":[],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}