{"id":"https://openalex.org/W2763161444","doi":"https://doi.org/10.1109/essderc.2017.8066624","title":"Modeling of dynamic trap density increase for aging simulation of any MOSFET circuits","display_name":"Modeling of dynamic trap density increase for aging simulation of any MOSFET circuits","publication_year":2017,"publication_date":"2017-09-01","ids":{"openalex":"https://openalex.org/W2763161444","doi":"https://doi.org/10.1109/essderc.2017.8066624","mag":"2763161444"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2017.8066624","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2017.8066624","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 47th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5075171408","display_name":"M. Miura\u2013Mattausch","orcid":"https://orcid.org/0000-0002-9244-9539"},"institutions":[{"id":"https://openalex.org/I113306721","display_name":"Hiroshima University","ror":"https://ror.org/03t78wx29","country_code":"JP","type":"education","lineage":["https://openalex.org/I113306721"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"M. Miura-Mattausch","raw_affiliation_strings":["Hiroshima University, Higashi-Hiroshima, Japan"],"affiliations":[{"raw_affiliation_string":"Hiroshima University, Higashi-Hiroshima, Japan","institution_ids":["https://openalex.org/I113306721"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5034105663","display_name":"H. Miyamoto","orcid":null},"institutions":[{"id":"https://openalex.org/I113306721","display_name":"Hiroshima University","ror":"https://ror.org/03t78wx29","country_code":"JP","type":"education","lineage":["https://openalex.org/I113306721"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. Miyamoto","raw_affiliation_strings":["Hiroshima University, Higashi-Hiroshima, Japan"],"affiliations":[{"raw_affiliation_string":"Hiroshima University, Higashi-Hiroshima, Japan","institution_ids":["https://openalex.org/I113306721"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018746171","display_name":"Hideyuki Kikuchihara","orcid":null},"institutions":[{"id":"https://openalex.org/I113306721","display_name":"Hiroshima University","ror":"https://ror.org/03t78wx29","country_code":"JP","type":"education","lineage":["https://openalex.org/I113306721"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. Kikuchihara","raw_affiliation_strings":["Hiroshima University, Higashi-Hiroshima, Japan"],"affiliations":[{"raw_affiliation_string":"Hiroshima University, Higashi-Hiroshima, Japan","institution_ids":["https://openalex.org/I113306721"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077533238","display_name":"D. Navarro","orcid":"https://orcid.org/0000-0001-6167-9617"},"institutions":[{"id":"https://openalex.org/I113306721","display_name":"Hiroshima University","ror":"https://ror.org/03t78wx29","country_code":"JP","type":"education","lineage":["https://openalex.org/I113306721"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"D. Navarro","raw_affiliation_strings":["Hiroshima University, Higashi-Hiroshima, Japan"],"affiliations":[{"raw_affiliation_string":"Hiroshima University, Higashi-Hiroshima, Japan","institution_ids":["https://openalex.org/I113306721"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060683731","display_name":"T. K. Maiti","orcid":"https://orcid.org/0000-0001-7034-4296"},"institutions":[{"id":"https://openalex.org/I113306721","display_name":"Hiroshima University","ror":"https://ror.org/03t78wx29","country_code":"JP","type":"education","lineage":["https://openalex.org/I113306721"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. K. Maiti","raw_affiliation_strings":["Hiroshima University, Higashi-Hiroshima, Japan"],"affiliations":[{"raw_affiliation_string":"Hiroshima University, Higashi-Hiroshima, Japan","institution_ids":["https://openalex.org/I113306721"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049074782","display_name":"Nezam Rohbani","orcid":"https://orcid.org/0000-0002-1935-7830"},"institutions":[{"id":"https://openalex.org/I133529467","display_name":"Sharif University of Technology","ror":"https://ror.org/024c2fq17","country_code":"IR","type":"education","lineage":["https://openalex.org/I133529467"]}],"countries":["IR"],"is_corresponding":false,"raw_author_name":"N. Rohbani","raw_affiliation_strings":["Sharif University of Technology, Tehran, Iran"],"affiliations":[{"raw_affiliation_string":"Sharif University of Technology, Tehran, Iran","institution_ids":["https://openalex.org/I133529467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108596245","display_name":"C. Ma","orcid":null},"institutions":[{"id":"https://openalex.org/I146617529","display_name":"Applied Science and Technology Research Institute","ror":"https://ror.org/03xmkea05","country_code":"CN","type":"facility","lineage":["https://openalex.org/I146617529"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"C. Ma","raw_affiliation_strings":["ASTRI, Hong Kong"],"affiliations":[{"raw_affiliation_string":"ASTRI, Hong Kong","institution_ids":["https://openalex.org/I146617529"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086404781","display_name":"Hans J\u00fcrgen Mattausch","orcid":"https://orcid.org/0000-0001-5712-1020"},"institutions":[{"id":"https://openalex.org/I113306721","display_name":"Hiroshima University","ror":"https://ror.org/03t78wx29","country_code":"JP","type":"education","lineage":["https://openalex.org/I113306721"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. J. Mattausch","raw_affiliation_strings":["Hiroshima University, Higashi-Hiroshima, Japan"],"affiliations":[{"raw_affiliation_string":"Hiroshima University, Higashi-Hiroshima, Japan","institution_ids":["https://openalex.org/I113306721"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5068544411","display_name":"Alexander Schiffmann","orcid":"https://orcid.org/0000-0003-0763-7760"},"institutions":[{"id":"https://openalex.org/I154481106","display_name":"AMS (Austria)","ror":"https://ror.org/03vz6gs79","country_code":"AT","type":"company","lineage":["https://openalex.org/I154481106"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"A. Schiffmann","raw_affiliation_strings":["ams AG, Graz, Austria"],"affiliations":[{"raw_affiliation_string":"ams AG, Graz, Austria","institution_ids":["https://openalex.org/I154481106"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030421090","display_name":"Alexander Steinmair","orcid":null},"institutions":[{"id":"https://openalex.org/I154481106","display_name":"AMS (Austria)","ror":"https://ror.org/03vz6gs79","country_code":"AT","type":"company","lineage":["https://openalex.org/I154481106"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"A. Steinmair","raw_affiliation_strings":["ams AG, Graz, Austria"],"affiliations":[{"raw_affiliation_string":"ams AG, Graz, Austria","institution_ids":["https://openalex.org/I154481106"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5089654561","display_name":"E. Seebacher","orcid":null},"institutions":[{"id":"https://openalex.org/I154481106","display_name":"AMS (Austria)","ror":"https://ror.org/03vz6gs79","country_code":"AT","type":"company","lineage":["https://openalex.org/I154481106"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"E. Seebacher","raw_affiliation_strings":["ams AG, Graz, Austria"],"affiliations":[{"raw_affiliation_string":"ams AG, Graz, Austria","institution_ids":["https://openalex.org/I154481106"]}]}],"institutions":[],"countries_distinct_count":4,"institutions_distinct_count":11,"corresponding_author_ids":["https://openalex.org/A5075171408"],"corresponding_institution_ids":["https://openalex.org/I113306721"],"apc_list":null,"apc_paid":null,"fwci":0.2867,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.60074632,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"192","last_page":"195"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.8421796560287476},{"id":"https://openalex.org/keywords/trap","display_name":"Trap (plumbing)","score":0.541977047920227},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5262041687965393},{"id":"https://openalex.org/keywords/poissons-equation","display_name":"Poisson's equation","score":0.5113596320152283},{"id":"https://openalex.org/keywords/substrate","display_name":"Substrate (aquarium)","score":0.45151710510253906},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.4370790719985962},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4028366506099701},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4001144468784332},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.38101398944854736},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3518885374069214},{"id":"https://openalex.org/keywords/computational-physics","display_name":"Computational physics","score":0.3241835832595825},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.29044032096862793},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.23276489973068237},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.21536782383918762}],"concepts":[{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.8421796560287476},{"id":"https://openalex.org/C121099081","wikidata":"https://www.wikidata.org/wiki/Q665580","display_name":"Trap (plumbing)","level":2,"score":0.541977047920227},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5262041687965393},{"id":"https://openalex.org/C96716743","wikidata":"https://www.wikidata.org/wiki/Q827688","display_name":"Poisson's equation","level":2,"score":0.5113596320152283},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.45151710510253906},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.4370790719985962},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4028366506099701},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4001144468784332},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.38101398944854736},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3518885374069214},{"id":"https://openalex.org/C30475298","wikidata":"https://www.wikidata.org/wiki/Q909554","display_name":"Computational physics","level":1,"score":0.3241835832595825},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.29044032096862793},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.23276489973068237},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.21536782383918762},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc.2017.8066624","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2017.8066624","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 47th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1963446232","https://openalex.org/W1967165975","https://openalex.org/W2010906761","https://openalex.org/W2031718663","https://openalex.org/W2097749596","https://openalex.org/W2102668288","https://openalex.org/W2110870100","https://openalex.org/W2162448034","https://openalex.org/W2166999360","https://openalex.org/W2574090688"],"related_works":["https://openalex.org/W2199813689","https://openalex.org/W4252447916","https://openalex.org/W2369033613","https://openalex.org/W2511880725","https://openalex.org/W2390226751","https://openalex.org/W2904116937","https://openalex.org/W2592098988","https://openalex.org/W1849638103","https://openalex.org/W2765385569","https://openalex.org/W2017519076"],"abstract_inverted_index":{"A":[0,84],"compact":[1],"aging":[2,62],"model":[3,63,100],"for":[4,57,80,106],"circuit":[5],"simulation":[6],"has":[7],"been":[8],"developed":[9],"by":[10,28,89],"considering":[11],"all":[12],"possible":[13],"trapped":[14,43,48],"carriers":[15,47],"within":[16,49],"MOSFETs.":[17],"The":[18,61,99],"hot":[19],"carrier":[20],"effect":[21,25],"and":[22],"the":[23,30,36,42,46,50,65,92,96],"N(P)BTI":[24],"are":[26,55],"modeled":[27],"integrating":[29],"substrate":[31],"current":[32],"as":[33,35,69,114,116],"well":[34,115],"oxide":[37],"field":[38],"change":[39],"due":[40],"to":[41,103],"carriers.":[44],"Additionally,":[45],"highly":[51],"resistive":[52],"drift":[53],"region":[54],"included":[56],"high-voltage":[58],"(HV)-MOSFET":[59],"modeling.":[60],"considers":[64],"dynamic":[66],"trap-density":[67],"increase":[68],"a":[70],"function":[71],"of":[72,109],"circuit-operation":[73],"time":[74],"with":[75],"dynamically":[76],"varying":[77],"stress":[78],"conditions":[79],"each":[81],"individual":[82],"MOSFET.":[83],"self-consistent":[85],"solution":[86],"is":[87,101],"obtained":[88],"iteratively":[90],"solving":[91],"Poisson":[93],"equation":[94],"including":[95],"trap":[97],"density.":[98],"verified":[102],"be":[104],"applicable":[105],"any":[107],"type":[108],"MOSFETs":[110],"covering":[111],"advanced":[112],"technologies":[113],"HV-MOSFETs.":[117]},"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}