{"id":"https://openalex.org/W2761012367","doi":"https://doi.org/10.1109/essderc.2017.8066597","title":"Buried multi-gate InAs-nanowire FETs","display_name":"Buried multi-gate InAs-nanowire FETs","publication_year":2017,"publication_date":"2017-09-01","ids":{"openalex":"https://openalex.org/W2761012367","doi":"https://doi.org/10.1109/essderc.2017.8066597","mag":"2761012367"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2017.8066597","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2017.8066597","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 47th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5017605811","display_name":"Thomas Grap","orcid":null},"institutions":[{"id":"https://openalex.org/I887968799","display_name":"RWTH Aachen University","ror":"https://ror.org/04xfq0f34","country_code":"DE","type":"education","lineage":["https://openalex.org/I887968799"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"Thomas Grap","raw_affiliation_strings":["Institute of Semiconductor Electronics, RWTH Aachen University, Aachen, Germany"],"affiliations":[{"raw_affiliation_string":"Institute of Semiconductor Electronics, RWTH Aachen University, Aachen, Germany","institution_ids":["https://openalex.org/I887968799"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036682828","display_name":"Felix Riederer","orcid":null},"institutions":[{"id":"https://openalex.org/I887968799","display_name":"RWTH Aachen University","ror":"https://ror.org/04xfq0f34","country_code":"DE","type":"education","lineage":["https://openalex.org/I887968799"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"F. Riederer","raw_affiliation_strings":["Institute of Semiconductor Electronics, RWTH Aachen University, Aachen, Germany"],"affiliations":[{"raw_affiliation_string":"Institute of Semiconductor Electronics, RWTH Aachen University, Aachen, Germany","institution_ids":["https://openalex.org/I887968799"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080544721","display_name":"Charu Gupta","orcid":"https://orcid.org/0000-0002-8115-3548"},"institutions":[{"id":"https://openalex.org/I887968799","display_name":"RWTH Aachen University","ror":"https://ror.org/04xfq0f34","country_code":"DE","type":"education","lineage":["https://openalex.org/I887968799"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"C. Gupta","raw_affiliation_strings":["Institute of Semiconductor Electronics, RWTH Aachen University, Aachen, Germany"],"affiliations":[{"raw_affiliation_string":"Institute of Semiconductor Electronics, RWTH Aachen University, Aachen, Germany","institution_ids":["https://openalex.org/I887968799"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5040572145","display_name":"Joachim Knoch","orcid":"https://orcid.org/0000-0001-5136-9287"},"institutions":[{"id":"https://openalex.org/I887968799","display_name":"RWTH Aachen University","ror":"https://ror.org/04xfq0f34","country_code":"DE","type":"education","lineage":["https://openalex.org/I887968799"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"J. Knoch","raw_affiliation_strings":["Institute of Semiconductor Electronics, RWTH Aachen University, Aachen, Germany"],"affiliations":[{"raw_affiliation_string":"Institute of Semiconductor Electronics, RWTH Aachen University, Aachen, Germany","institution_ids":["https://openalex.org/I887968799"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5017605811"],"corresponding_institution_ids":["https://openalex.org/I887968799"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.129445,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"82","last_page":"85"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nanowire","display_name":"Nanowire","score":0.9042441248893738},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6971330642700195},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.6678577661514282},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6400494575500488},{"id":"https://openalex.org/keywords/nanoscopic-scale","display_name":"Nanoscopic scale","score":0.6073595881462097},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.593016505241394},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5558633208274841},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.4964445233345032},{"id":"https://openalex.org/keywords/gallium-arsenide","display_name":"Gallium arsenide","score":0.48898065090179443},{"id":"https://openalex.org/keywords/nanoelectronics","display_name":"Nanoelectronics","score":0.4626169502735138},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.2443799078464508},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.19560399651527405},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.08913683891296387},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.052341073751449585}],"concepts":[{"id":"https://openalex.org/C74214498","wikidata":"https://www.wikidata.org/wiki/Q631739","display_name":"Nanowire","level":2,"score":0.9042441248893738},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6971330642700195},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.6678577661514282},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6400494575500488},{"id":"https://openalex.org/C45206210","wikidata":"https://www.wikidata.org/wiki/Q2415817","display_name":"Nanoscopic scale","level":2,"score":0.6073595881462097},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.593016505241394},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5558633208274841},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.4964445233345032},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.48898065090179443},{"id":"https://openalex.org/C141400236","wikidata":"https://www.wikidata.org/wiki/Q1479544","display_name":"Nanoelectronics","level":2,"score":0.4626169502735138},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.2443799078464508},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.19560399651527405},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.08913683891296387},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.052341073751449585}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/essderc.2017.8066597","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2017.8066597","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 47th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},{"id":"pmh:oai:publications.rwth-aachen.de:717854","is_oa":false,"landing_page_url":"https://publications.rwth-aachen.de/record/717854","pdf_url":null,"source":{"id":"https://openalex.org/S4306401033","display_name":"RWTH Publications (RWTH Aachen)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I887968799","host_organization_name":"RWTH Aachen University","host_organization_lineage":["https://openalex.org/I887968799"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"[Piscataway, NJ] : IEEE 82-85 (2017). doi:10.1109/ESSDERC.2017.8066597","raw_type":"info:eu-repo/semantics/conferenceObject"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Sustainable cities and communities","id":"https://metadata.un.org/sdg/11","score":0.6000000238418579}],"awards":[],"funders":[{"id":"https://openalex.org/F4320320879","display_name":"Deutsche Forschungsgemeinschaft","ror":"https://ror.org/018mejw64"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":17,"referenced_works":["https://openalex.org/W1975749609","https://openalex.org/W1981591284","https://openalex.org/W1986410144","https://openalex.org/W2002776622","https://openalex.org/W2052529242","https://openalex.org/W2060934579","https://openalex.org/W2111852168","https://openalex.org/W2113164608","https://openalex.org/W2246050564","https://openalex.org/W2300150447","https://openalex.org/W2312503676","https://openalex.org/W2325906659","https://openalex.org/W2552899943","https://openalex.org/W2574807302","https://openalex.org/W2584058250","https://openalex.org/W3099504964","https://openalex.org/W3105482759"],"related_works":["https://openalex.org/W2385877031","https://openalex.org/W2381853949","https://openalex.org/W2375445966","https://openalex.org/W4240755120","https://openalex.org/W1530968337","https://openalex.org/W2010017773","https://openalex.org/W2910085732","https://openalex.org/W2010155603","https://openalex.org/W2322326361","https://openalex.org/W1664355441"],"abstract_inverted_index":{"We":[0],"present":[1],"a":[2,23,31,56],"study":[3],"on":[4,17],"multi-gate":[5,66],"field-effect":[6],"transistors":[7],"that":[8,28,37,58],"allow":[9],"adjusting":[10],"the":[11,18,65],"potential":[12,53],"landscape":[13],"in":[14],"semiconducting":[15],"nanowires/tubes":[16],"nanoscale.":[19],"To":[20],"this":[21],"end,":[22],"damascenelike":[24],"process":[25],"is":[26,68],"employed":[27],"allows":[29],"fabricating":[30],"large":[32],"number":[33],"of":[34,64],"gate":[35],"structures":[36,67],"are":[38],"contacted":[39],"individually":[40],"and":[41,44],"exhibit":[42],"lengths":[43],"inter-gate":[45],"distances":[46],"well":[47],"below":[48],"10nm":[49],"enabling":[50],"to":[51],"realize":[52],"landscapes":[54],"within":[55],"device":[57],"exploit":[59],"quantum":[60],"effects.":[61],"The":[62],"functionality":[63],"shown":[69],"experimentally":[70],"with":[71],"InAs":[72],"nanowire":[73],"FETs.":[74]},"counts_by_year":[{"year":2023,"cited_by_count":1}],"updated_date":"2026-04-04T16:13:02.066488","created_date":"2025-10-10T00:00:00"}