{"id":"https://openalex.org/W2760845165","doi":"https://doi.org/10.1109/essderc.2017.8066583","title":"SPICE modeling of light induced current in silicon with \u2018Generalized\u2019 lumped devices","display_name":"SPICE modeling of light induced current in silicon with \u2018Generalized\u2019 lumped devices","publication_year":2017,"publication_date":"2017-09-01","ids":{"openalex":"https://openalex.org/W2760845165","doi":"https://doi.org/10.1109/essderc.2017.8066583","mag":"2760845165"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2017.8066583","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2017.8066583","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 47th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5086254279","display_name":"Chiara Rossi","orcid":"https://orcid.org/0000-0001-6976-7486"},"institutions":[{"id":"https://openalex.org/I5124864","display_name":"\u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne","ror":"https://ror.org/02s376052","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I5124864"]}],"countries":["CH"],"is_corresponding":true,"raw_author_name":"Chiara Rossi","raw_affiliation_strings":["Ecole Polytechnique Federale de Lausanne (EPFL), Lausanne, Switzerland"],"affiliations":[{"raw_affiliation_string":"Ecole Polytechnique Federale de Lausanne (EPFL), Lausanne, Switzerland","institution_ids":["https://openalex.org/I5124864"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051189947","display_name":"Pietro Buccella","orcid":null},"institutions":[{"id":"https://openalex.org/I5124864","display_name":"\u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne","ror":"https://ror.org/02s376052","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I5124864"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Pietro Buccella","raw_affiliation_strings":["Ecole Polytechnique Federale de Lausanne (EPFL), Lausanne, Switzerland"],"affiliations":[{"raw_affiliation_string":"Ecole Polytechnique Federale de Lausanne (EPFL), Lausanne, Switzerland","institution_ids":["https://openalex.org/I5124864"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5072997946","display_name":"Camillo Stefanucci","orcid":null},"institutions":[{"id":"https://openalex.org/I154481106","display_name":"AMS (Austria)","ror":"https://ror.org/03vz6gs79","country_code":"AT","type":"company","lineage":["https://openalex.org/I154481106"]}],"countries":["AT"],"is_corresponding":false,"raw_author_name":"Camillo Stefanucci","raw_affiliation_strings":["AMS AG, Schloss Premstaetten, Austria"],"affiliations":[{"raw_affiliation_string":"AMS AG, Schloss Premstaetten, Austria","institution_ids":["https://openalex.org/I154481106"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5060693851","display_name":"Jean-Michel Sall\u00e8se","orcid":"https://orcid.org/0000-0003-2109-909X"},"institutions":[{"id":"https://openalex.org/I5124864","display_name":"\u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne","ror":"https://ror.org/02s376052","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I5124864"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Jean-Michel Sallese","raw_affiliation_strings":["Ecole Polytechnique Federale de Lausanne (EPFL), Lausanne, Switzerland"],"affiliations":[{"raw_affiliation_string":"Ecole Polytechnique Federale de Lausanne (EPFL), Lausanne, Switzerland","institution_ids":["https://openalex.org/I5124864"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5086254279"],"corresponding_institution_ids":["https://openalex.org/I5124864"],"apc_list":null,"apc_paid":null,"fwci":0.2867,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.59928132,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"57","issue":null,"first_page":"26","last_page":"29"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.8945738077163696},{"id":"https://openalex.org/keywords/current","display_name":"Current (fluid)","score":0.6385297775268555},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.614249587059021},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.6069892644882202},{"id":"https://openalex.org/keywords/carrier-lifetime","display_name":"Carrier lifetime","score":0.5409887433052063},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5396774411201477},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.518483579158783},{"id":"https://openalex.org/keywords/equivalent-circuit","display_name":"Equivalent circuit","score":0.4789081811904907},{"id":"https://openalex.org/keywords/semiconductor-device-modeling","display_name":"Semiconductor device modeling","score":0.42797842621803284},{"id":"https://openalex.org/keywords/computational-physics","display_name":"Computational physics","score":0.4166489839553833},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4020511507987976},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.34160012006759644},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.282328724861145},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.23930540680885315}],"concepts":[{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.8945738077163696},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.6385297775268555},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.614249587059021},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.6069892644882202},{"id":"https://openalex.org/C198865614","wikidata":"https://www.wikidata.org/wiki/Q5046374","display_name":"Carrier lifetime","level":3,"score":0.5409887433052063},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5396774411201477},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.518483579158783},{"id":"https://openalex.org/C23572009","wikidata":"https://www.wikidata.org/wiki/Q964981","display_name":"Equivalent circuit","level":3,"score":0.4789081811904907},{"id":"https://openalex.org/C4775677","wikidata":"https://www.wikidata.org/wiki/Q7449393","display_name":"Semiconductor device modeling","level":3,"score":0.42797842621803284},{"id":"https://openalex.org/C30475298","wikidata":"https://www.wikidata.org/wiki/Q909554","display_name":"Computational physics","level":1,"score":0.4166489839553833},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4020511507987976},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.34160012006759644},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.282328724861145},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.23930540680885315},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc.2017.8066583","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2017.8066583","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 47th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.6600000262260437,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320320924","display_name":"Schweizerischer Nationalfonds zur F\u00f6rderung der Wissenschaftlichen Forschung","ror":"https://ror.org/00yjd3n13"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W1971040783","https://openalex.org/W2014434130","https://openalex.org/W2105326829","https://openalex.org/W2132097812","https://openalex.org/W2344824436","https://openalex.org/W3147289055","https://openalex.org/W3148267186"],"related_works":["https://openalex.org/W2945285759","https://openalex.org/W4399527091","https://openalex.org/W2798321569","https://openalex.org/W4396689053","https://openalex.org/W2057436168","https://openalex.org/W2615278662","https://openalex.org/W1989032443","https://openalex.org/W2228479887","https://openalex.org/W3017875478","https://openalex.org/W3099527205"],"abstract_inverted_index":{"SPlCE-compatible":[0],"modeling":[1],"with":[2,18,73],"generalized":[3],"lumped":[4],"devices":[5],"is":[6,48,65],"used":[7,27],"to":[8],"simulate":[9],"the":[10],"spatial":[11],"and":[12,24,35,59,71],"time":[13],"dependence":[14],"of":[15,30,52,61],"photogenerated":[16],"carriers":[17,64],"standard":[19],"circuit":[20],"simulators.":[21],"Equivalent":[22],"voltages":[23],"currents":[25,38],"are":[26],"in":[28,46],"place":[29],"minority":[31,36,63],"carrier":[32,37,44],"excess":[33,43],"concentrations":[34],"respectively.":[39],"The":[40],"initial":[41],"light-induced":[42],"concentration":[45],"silicon":[47],"accounted":[49],"by":[50],"means":[51],"distributed":[53],"external":[54],"voltage":[55],"sources.":[56],"Generation,":[57],"propagation":[58],"collection":[60],"these":[62],"analyzed":[66],"for":[67],"three":[68],"pertinent":[69],"structures":[70],"compared":[72],"TCAD":[74],"numerical":[75],"simulations.":[76]},"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2018,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}