{"id":"https://openalex.org/W2537922384","doi":"https://doi.org/10.1109/essderc.2016.7599688","title":"Replacing Si to SiC: Opportunities and challenges","display_name":"Replacing Si to SiC: Opportunities and challenges","publication_year":2016,"publication_date":"2016-09-01","ids":{"openalex":"https://openalex.org/W2537922384","doi":"https://doi.org/10.1109/essderc.2016.7599688","mag":"2537922384"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2016.7599688","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2016.7599688","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 46th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101618839","display_name":"Muhammad Nawaz","orcid":"https://orcid.org/0000-0002-8387-9000"},"institutions":[{"id":"https://openalex.org/I4210086503","display_name":"ABB (Sweden)","ror":"https://ror.org/0033n4009","country_code":"SE","type":"company","lineage":["https://openalex.org/I4210086503","https://openalex.org/I885143765"]}],"countries":["SE"],"is_corresponding":true,"raw_author_name":"Muhammad Nawaz","raw_affiliation_strings":["ABB Corporate Research, V\u00e4ster\u00e5s, Sweden"],"affiliations":[{"raw_affiliation_string":"ABB Corporate Research, V\u00e4ster\u00e5s, Sweden","institution_ids":["https://openalex.org/I4210086503"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5035159580","display_name":"Kalle Ilves","orcid":null},"institutions":[{"id":"https://openalex.org/I4210086503","display_name":"ABB (Sweden)","ror":"https://ror.org/0033n4009","country_code":"SE","type":"company","lineage":["https://openalex.org/I4210086503","https://openalex.org/I885143765"]}],"countries":["SE"],"is_corresponding":false,"raw_author_name":"Kalle Ilves","raw_affiliation_strings":["ABB Corporate Research Center Sweden, Vasteras, SE"],"affiliations":[{"raw_affiliation_string":"ABB Corporate Research Center Sweden, Vasteras, SE","institution_ids":["https://openalex.org/I4210086503"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5101618839"],"corresponding_institution_ids":["https://openalex.org/I4210086503"],"apc_list":null,"apc_paid":null,"fwci":1.1026,"has_fulltext":false,"cited_by_count":16,"citation_normalized_percentile":{"value":0.80755168,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"472","last_page":"475"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11102","display_name":"HVDC Systems and Fault Protection","score":0.9939000010490417,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9937999844551086,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.8867074847221375},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6471238136291504},{"id":"https://openalex.org/keywords/survivability","display_name":"Survivability","score":0.5929204821586609},{"id":"https://openalex.org/keywords/insulated-gate-bipolar-transistor","display_name":"Insulated-gate bipolar transistor","score":0.5645824074745178},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.531764566898346},{"id":"https://openalex.org/keywords/jfet","display_name":"JFET","score":0.5052865147590637},{"id":"https://openalex.org/keywords/connection","display_name":"Connection (principal bundle)","score":0.4978933334350586},{"id":"https://openalex.org/keywords/figure-of-merit","display_name":"Figure of merit","score":0.49685409665107727},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4956010580062866},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.4901936650276184},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.46356093883514404},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.45890966057777405},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.453000009059906},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4386118948459625},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.35102206468582153},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.32784798741340637},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.23369461297988892},{"id":"https://openalex.org/keywords/mechanical-engineering","display_name":"Mechanical engineering","score":0.20011693239212036},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.18299320340156555},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.16329970955848694},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.14335942268371582},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.08788704872131348}],"concepts":[{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.8867074847221375},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6471238136291504},{"id":"https://openalex.org/C2781133158","wikidata":"https://www.wikidata.org/wiki/Q1088669","display_name":"Survivability","level":2,"score":0.5929204821586609},{"id":"https://openalex.org/C28285623","wikidata":"https://www.wikidata.org/wiki/Q176110","display_name":"Insulated-gate bipolar transistor","level":3,"score":0.5645824074745178},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.531764566898346},{"id":"https://openalex.org/C2778484494","wikidata":"https://www.wikidata.org/wiki/Q385520","display_name":"JFET","level":5,"score":0.5052865147590637},{"id":"https://openalex.org/C13355873","wikidata":"https://www.wikidata.org/wiki/Q2920850","display_name":"Connection (principal bundle)","level":2,"score":0.4978933334350586},{"id":"https://openalex.org/C130277099","wikidata":"https://www.wikidata.org/wiki/Q3676605","display_name":"Figure of merit","level":2,"score":0.49685409665107727},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4956010580062866},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.4901936650276184},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.46356093883514404},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.45890966057777405},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.453000009059906},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4386118948459625},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.35102206468582153},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.32784798741340637},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.23369461297988892},{"id":"https://openalex.org/C78519656","wikidata":"https://www.wikidata.org/wiki/Q101333","display_name":"Mechanical engineering","level":1,"score":0.20011693239212036},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.18299320340156555},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.16329970955848694},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.14335942268371582},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08788704872131348},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc.2016.7599688","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2016.7599688","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 46th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.5199999809265137}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W1925117859","https://openalex.org/W2047184375","https://openalex.org/W2063260928","https://openalex.org/W2063456099","https://openalex.org/W2073685840","https://openalex.org/W2152111451","https://openalex.org/W2242900195","https://openalex.org/W2315498405","https://openalex.org/W2324941450","https://openalex.org/W2397000503","https://openalex.org/W2406981988","https://openalex.org/W6712093167"],"related_works":["https://openalex.org/W1965671135","https://openalex.org/W2582132882","https://openalex.org/W2914685182","https://openalex.org/W2041060175","https://openalex.org/W1980580338","https://openalex.org/W2045810370","https://openalex.org/W3128422302","https://openalex.org/W2487669981","https://openalex.org/W2161804774","https://openalex.org/W2965790399"],"abstract_inverted_index":{"While":[0],"silicon":[1,16],"carbide":[2],"(SiC)":[3],"is":[4,75,87,116],"now":[5],"believed":[6],"to":[7,12,64,120,143],"be":[8],"a":[9,31,140],"potential":[10,141],"replacement":[11,142],"leading":[13],"horse":[14],"material":[15,29],"(Si)":[17],"on":[18],"many":[19],"power":[20,35,40,95],"fronts,":[21],"this":[22],"paper":[23],"addresses":[24],"the":[25,54,61],"merit":[26],"of":[27,34,57,82,100,110,132],"SiC":[28,39,79,149],"for":[30,78,90],"diverse":[32],"range":[33],"applications.":[36],"Several":[37],"commercial":[38],"modules":[41,96],"have":[42],"been":[43,137],"characterized":[44],"and":[45,51],"evaluated":[46,138],"under":[47],"various":[48],"test":[49],"conditions":[50],"hence":[52],"strengthening":[53],"confidence":[55],"level":[56],"their":[58,121],"usage":[59],"in":[60],"field.":[62],"Compared":[63],"Si":[65,146],"counterpart,":[66],"almost":[67,111],"70":[68],"\u2013":[69,84,92,102,113],"80":[70],"%":[71],"lower":[72],"switching":[73],"loss":[74],"generally":[76,88],"observed":[77],"devices.":[80],"On-resistance":[81],"4.0":[83],"8.0":[85],"m\u03a9":[86],"obtained":[89],"1.2":[91],"1.7":[93],"kV":[94],"with":[97,134],"current":[98],"rating":[99],"120":[101],"300":[103],"A.":[104],"A":[105,126],"short":[106],"circuit":[107],"survivability":[108],"time":[109],"3":[112],"4":[114],"\u00b5s":[115],"achieved":[117],"when":[118],"tested":[119],"nominal":[122],"supply":[123],"voltage":[124],"condition.":[125],"hybrid":[127],"concept":[128],"(i.e.,":[129],"parallel":[130],"connection":[131],"Si-IGBT":[133],"SiC-MOSFET)":[135],"has":[136],"as":[139],"either":[144],"full":[145,148],"or":[147],"solutions.":[150]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":4},{"year":2023,"cited_by_count":2},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":4},{"year":2018,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}