{"id":"https://openalex.org/W2537509442","doi":"https://doi.org/10.1109/essderc.2016.7599671","title":"Complementary III\u2013V heterostructure tunnel FETs","display_name":"Complementary III\u2013V heterostructure tunnel FETs","publication_year":2016,"publication_date":"2016-09-01","ids":{"openalex":"https://openalex.org/W2537509442","doi":"https://doi.org/10.1109/essderc.2016.7599671","mag":"2537509442"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2016.7599671","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2016.7599671","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 46th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5060027388","display_name":"Kirsten E. Moselund","orcid":"https://orcid.org/0000-0003-4713-2046"},"institutions":[{"id":"https://openalex.org/I4210126328","display_name":"IBM Research - Zurich","ror":"https://ror.org/02js37d36","country_code":"CH","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210126328"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"K. E. Moselund","raw_affiliation_strings":["Materials Integration and Nanoscale Devices Group, IBM Research Zurich, R\u00fcschlikon, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Materials Integration and Nanoscale Devices Group, IBM Research Zurich, R\u00fcschlikon, Switzerland","institution_ids":["https://openalex.org/I4210126328"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008642211","display_name":"Davide Cutaia","orcid":null},"institutions":[{"id":"https://openalex.org/I4210126328","display_name":"IBM Research - Zurich","ror":"https://ror.org/02js37d36","country_code":"CH","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210126328"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"D. Cutaia","raw_affiliation_strings":["Materials Integration and Nanoscale Devices Group, IBM Research Zurich, R\u00fcschlikon, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Materials Integration and Nanoscale Devices Group, IBM Research Zurich, R\u00fcschlikon, Switzerland","institution_ids":["https://openalex.org/I4210126328"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5058879084","display_name":"Heinz Schmid","orcid":"https://orcid.org/0000-0002-0228-4268"},"institutions":[{"id":"https://openalex.org/I4210126328","display_name":"IBM Research - Zurich","ror":"https://ror.org/02js37d36","country_code":"CH","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210126328"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"H. Schmid","raw_affiliation_strings":["Materials Integration and Nanoscale Devices Group, IBM Research Zurich, R\u00fcschlikon, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Materials Integration and Nanoscale Devices Group, IBM Research Zurich, R\u00fcschlikon, Switzerland","institution_ids":["https://openalex.org/I4210126328"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062674895","display_name":"Heike Riel","orcid":"https://orcid.org/0000-0003-4762-7815"},"institutions":[{"id":"https://openalex.org/I4210126328","display_name":"IBM Research - Zurich","ror":"https://ror.org/02js37d36","country_code":"CH","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210126328"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"H. Riel","raw_affiliation_strings":["Materials Integration and Nanoscale Devices Group, IBM Research Zurich, R\u00fcschlikon, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Materials Integration and Nanoscale Devices Group, IBM Research Zurich, R\u00fcschlikon, Switzerland","institution_ids":["https://openalex.org/I4210126328"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066401572","display_name":"Saurabh Sant","orcid":"https://orcid.org/0000-0001-7861-1985"},"institutions":[{"id":"https://openalex.org/I35440088","display_name":"ETH Zurich","ror":"https://ror.org/05a28rw58","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I35440088"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"S. Sant","raw_affiliation_strings":["Integrated Systems Laboratory ETH Z\u00fcrich, Z\u00fcrich, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Integrated Systems Laboratory ETH Z\u00fcrich, Z\u00fcrich, Switzerland","institution_ids":["https://openalex.org/I35440088"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5082626987","display_name":"Andreas Schenk","orcid":"https://orcid.org/0000-0002-0260-7282"},"institutions":[{"id":"https://openalex.org/I35440088","display_name":"ETH Zurich","ror":"https://ror.org/05a28rw58","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I35440088"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"A. Schenk","raw_affiliation_strings":["Integrated Systems Laboratory ETH Z\u00fcrich, Z\u00fcrich, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Integrated Systems Laboratory ETH Z\u00fcrich, Z\u00fcrich, Switzerland","institution_ids":["https://openalex.org/I35440088"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.1161,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.81041913,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"403","last_page":"407"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/heterojunction","display_name":"Heterojunction","score":0.5766753554344177},{"id":"https://openalex.org/keywords/quantum-tunnelling","display_name":"Quantum tunnelling","score":0.5665926337242126},{"id":"https://openalex.org/keywords/stack","display_name":"Stack (abstract data type)","score":0.5068500638008118},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.38209664821624756},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3666267395019531},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.35560792684555054},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.35291755199432373},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3149976134300232},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2724381685256958},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.12557068467140198}],"concepts":[{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.5766753554344177},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.5665926337242126},{"id":"https://openalex.org/C9395851","wikidata":"https://www.wikidata.org/wiki/Q177929","display_name":"Stack (abstract data type)","level":2,"score":0.5068500638008118},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.38209664821624756},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3666267395019531},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.35560792684555054},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.35291755199432373},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3149976134300232},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2724381685256958},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.12557068467140198},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc.2016.7599671","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2016.7599671","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 46th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W1482125208","https://openalex.org/W1556957619","https://openalex.org/W1600507069","https://openalex.org/W1860306208","https://openalex.org/W1986222701","https://openalex.org/W2032197740","https://openalex.org/W2038555408","https://openalex.org/W2058145070","https://openalex.org/W2075586275","https://openalex.org/W2079292622","https://openalex.org/W2082517399","https://openalex.org/W2288698494","https://openalex.org/W2290170312","https://openalex.org/W2291256907","https://openalex.org/W2313717030","https://openalex.org/W2327176307","https://openalex.org/W2332379034","https://openalex.org/W2525977156","https://openalex.org/W2527996149"],"related_works":["https://openalex.org/W1515161531","https://openalex.org/W4379114818","https://openalex.org/W2921865011","https://openalex.org/W1631058538","https://openalex.org/W2380576232","https://openalex.org/W2021859258","https://openalex.org/W4323658053","https://openalex.org/W2012959172","https://openalex.org/W2013924061","https://openalex.org/W2937054111"],"abstract_inverted_index":{"In":[0],"the":[1,14,30,33,101,118,122,130],"present":[2],"work":[3],"we":[4],"will":[5,128],"show":[6,29,83,114],"our":[7,112,138],"complementary":[8],"TFET":[9],"technology,":[10],"which":[11],"allows":[12],"for":[13],"co-planar":[15],"integration":[16],"of":[17,27,32,53,56,77,87,111,132],"InAs/Si":[18],"p-TFETs":[19,44],"and":[20,39,105,136],"InAs/GaSb":[21],"n-TFETs.":[22],"We":[23,127],"demonstrate":[24],"both":[25],"types":[26],"devices,":[28],"results":[31,139],"electrical":[34],"characterization":[35],"at":[36,117],"room":[37],"temperature":[38],"down":[40],"to":[41,120],"125K.":[42],"The":[43,79],"exhibit":[45],"excellent":[46],"performance":[47],"with":[48,72,140],"I":[49,90],"<sub":[50,59,65,91],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[51,60,66,92],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">on</sub>":[52,93],"a":[54],"couple":[55],"\u03bcA/\u03bcm":[57],"(|V":[58],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">GS</sub>":[61],"|":[62,68],"=":[63,69],"|V":[64],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">DS</sub>":[67],"0.5V)":[70],"combined":[71],"average":[73],"subthreshold":[74],"swing,":[75],"SS,":[76],"70-80mV/dec.":[78],"all":[80],"III-V":[81],"n-TFETs":[82],"about":[84],"an":[85],"order":[86],"magnitude":[88],"higher":[89],",":[94],"but":[95],"their":[96],"SS":[97],"is":[98],"limited":[99],"by":[100],"non-optimized":[102],"gate":[103],"stack":[104],"doping":[106],"profiles.":[107],"Thorough":[108],"simulation":[109],"studies":[110],"devices":[113],"trap-assisted":[115],"tunneling":[116],"heterojunction":[119],"be":[121],"main":[123],"limitation":[124],"on":[125],"SS.":[126],"discuss":[129],"impact":[131],"different":[133],"trap":[134],"mechanisms":[135],"compare":[137],"other":[141],"experimental":[142],"data.":[143]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2019,"cited_by_count":3},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":2}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}