{"id":"https://openalex.org/W2535447078","doi":"https://doi.org/10.1109/essderc.2016.7599670","title":"Advances in steep-slope tunnel FETs","display_name":"Advances in steep-slope tunnel FETs","publication_year":2016,"publication_date":"2016-09-01","ids":{"openalex":"https://openalex.org/W2535447078","doi":"https://doi.org/10.1109/essderc.2016.7599670","mag":"2535447078"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2016.7599670","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2016.7599670","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 46th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/64541/1/ESSDERC2016%20-%20TOMIOKA.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5011010994","display_name":"Katsuhiro Tomioka","orcid":"https://orcid.org/0000-0003-3482-2371"},"institutions":[{"id":"https://openalex.org/I104234503","display_name":"Hokkaido University of Science","ror":"https://ror.org/05gqsa340","country_code":"JP","type":"education","lineage":["https://openalex.org/I104234503"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Katsuhiro Tomioka","raw_affiliation_strings":["Hokkaido Daigaku, Sapporo, Hokkaido, JP"],"affiliations":[{"raw_affiliation_string":"Hokkaido Daigaku, Sapporo, Hokkaido, JP","institution_ids":["https://openalex.org/I104234503"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062570951","display_name":"Junichi Motohisa","orcid":"https://orcid.org/0000-0001-9529-4299"},"institutions":[{"id":"https://openalex.org/I205349734","display_name":"Hokkaido University","ror":"https://ror.org/02e16g702","country_code":"JP","type":"education","lineage":["https://openalex.org/I205349734"]},{"id":"https://openalex.org/I159165171","display_name":"Hokkaido Information University","ror":"https://ror.org/00nyxpe17","country_code":"JP","type":"education","lineage":["https://openalex.org/I159165171"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Junichi Motohisa","raw_affiliation_strings":["Graduate School of Information Science and Technology, Hokkaido University, Hokkaido, Japan"],"affiliations":[{"raw_affiliation_string":"Graduate School of Information Science and Technology, Hokkaido University, Hokkaido, Japan","institution_ids":["https://openalex.org/I159165171","https://openalex.org/I205349734"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5113503598","display_name":"Takashi Fukui","orcid":null},"institutions":[{"id":"https://openalex.org/I205349734","display_name":"Hokkaido University","ror":"https://ror.org/02e16g702","country_code":"JP","type":"education","lineage":["https://openalex.org/I205349734"]},{"id":"https://openalex.org/I159165171","display_name":"Hokkaido Information University","ror":"https://ror.org/00nyxpe17","country_code":"JP","type":"education","lineage":["https://openalex.org/I159165171"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takashi Fukui","raw_affiliation_strings":["Graduate School of Information Science and Technology, Hokkaido University, Hokkaido, Japan"],"affiliations":[{"raw_affiliation_string":"Graduate School of Information Science and Technology, Hokkaido University, Hokkaido, Japan","institution_ids":["https://openalex.org/I159165171","https://openalex.org/I205349734"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5011010994"],"corresponding_institution_ids":["https://openalex.org/I104234503"],"apc_list":null,"apc_paid":null,"fwci":0.3719,"has_fulltext":true,"cited_by_count":2,"citation_normalized_percentile":{"value":0.67006094,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":"102","issue":null,"first_page":"397","last_page":"402"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/heterojunction","display_name":"Heterojunction","score":0.8602080345153809},{"id":"https://openalex.org/keywords/subthreshold-slope","display_name":"Subthreshold slope","score":0.7705953121185303},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6025328636169434},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5946797728538513},{"id":"https://openalex.org/keywords/nanowire","display_name":"Nanowire","score":0.5145115852355957},{"id":"https://openalex.org/keywords/doping","display_name":"Doping","score":0.5048085451126099},{"id":"https://openalex.org/keywords/quantum-tunnelling","display_name":"Quantum tunnelling","score":0.4823172092437744},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.46942904591560364},{"id":"https://openalex.org/keywords/band-offset","display_name":"Band offset","score":0.4418301284313202},{"id":"https://openalex.org/keywords/tunnel-junction","display_name":"Tunnel junction","score":0.4287712574005127},{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.41180646419525146},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3995812237262726},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.3678564429283142},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.36432555317878723},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3320609927177429},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.20813414454460144},{"id":"https://openalex.org/keywords/valence-band","display_name":"Valence band","score":0.18333902955055237},{"id":"https://openalex.org/keywords/band-gap","display_name":"Band gap","score":0.09581533074378967}],"concepts":[{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.8602080345153809},{"id":"https://openalex.org/C103566474","wikidata":"https://www.wikidata.org/wiki/Q7632226","display_name":"Subthreshold slope","level":5,"score":0.7705953121185303},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6025328636169434},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5946797728538513},{"id":"https://openalex.org/C74214498","wikidata":"https://www.wikidata.org/wiki/Q631739","display_name":"Nanowire","level":2,"score":0.5145115852355957},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5048085451126099},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.4823172092437744},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.46942904591560364},{"id":"https://openalex.org/C47592295","wikidata":"https://www.wikidata.org/wiki/Q4854276","display_name":"Band offset","level":4,"score":0.4418301284313202},{"id":"https://openalex.org/C83408046","wikidata":"https://www.wikidata.org/wiki/Q3183536","display_name":"Tunnel junction","level":3,"score":0.4287712574005127},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.41180646419525146},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3995812237262726},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.3678564429283142},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.36432555317878723},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3320609927177429},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.20813414454460144},{"id":"https://openalex.org/C103272658","wikidata":"https://www.wikidata.org/wiki/Q528769","display_name":"Valence band","level":3,"score":0.18333902955055237},{"id":"https://openalex.org/C181966813","wikidata":"https://www.wikidata.org/wiki/Q806352","display_name":"Band gap","level":2,"score":0.09581533074378967}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1109/essderc.2016.7599670","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2016.7599670","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 46th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},{"id":"pmh:oai:eprints.lib.hokudai.ac.jp:2115/64541","is_oa":true,"landing_page_url":"http://hdl.handle.net/2115/64541","pdf_url":"https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/64541/1/ESSDERC2016%20-%20TOMIOKA.pdf","source":{"id":"https://openalex.org/S4306400549","display_name":"Hokkaido University Collection of Scholarly and Academic Papers (Hokkaido University)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I205349734","host_organization_name":"Hokkaido University","host_organization_lineage":["https://openalex.org/I205349734"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"proceedings (author version)"},{"id":"pmh:oai:irdb.nii.ac.jp:01364:0007180575","is_oa":true,"landing_page_url":"https://hdl.handle.net/2115/64541","pdf_url":null,"source":{"id":"https://openalex.org/S7407056385","display_name":"Institutional Repositories DataBase (IRDB)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I184597095","host_organization_name":"National Institute of Informatics","host_organization_lineage":["https://openalex.org/I184597095"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"conference paper"}],"best_oa_location":{"id":"pmh:oai:eprints.lib.hokudai.ac.jp:2115/64541","is_oa":true,"landing_page_url":"http://hdl.handle.net/2115/64541","pdf_url":"https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/64541/1/ESSDERC2016%20-%20TOMIOKA.pdf","source":{"id":"https://openalex.org/S4306400549","display_name":"Hokkaido University Collection of Scholarly and Academic Papers (Hokkaido University)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I205349734","host_organization_name":"Hokkaido University","host_organization_lineage":["https://openalex.org/I205349734"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"proceedings (author version)"},"sustainable_development_goals":[{"score":0.6399999856948853,"id":"https://metadata.un.org/sdg/11","display_name":"Sustainable cities and communities"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320338111","display_name":"Precursory Research for Embryonic Science and Technology","ror":null}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2535447078.pdf","grobid_xml":"https://content.openalex.org/works/W2535447078.grobid-xml"},"referenced_works_count":19,"referenced_works":["https://openalex.org/W1968666095","https://openalex.org/W1970587745","https://openalex.org/W1984772856","https://openalex.org/W1995184712","https://openalex.org/W2006405770","https://openalex.org/W2009624223","https://openalex.org/W2013311995","https://openalex.org/W2038842933","https://openalex.org/W2051119617","https://openalex.org/W2079292622","https://openalex.org/W2089087993","https://openalex.org/W2112762390","https://openalex.org/W2125637232","https://openalex.org/W2151708372","https://openalex.org/W2154322241","https://openalex.org/W2192681950","https://openalex.org/W2319746059","https://openalex.org/W2334393496","https://openalex.org/W2432448026"],"related_works":["https://openalex.org/W1186362247","https://openalex.org/W1995720339","https://openalex.org/W2545890115","https://openalex.org/W2483800719","https://openalex.org/W2905928227","https://openalex.org/W4235745934","https://openalex.org/W2062469423","https://openalex.org/W2095078040","https://openalex.org/W2040326261","https://openalex.org/W1776035293"],"abstract_inverted_index":{"Tunnel":[0],"FETs":[1],"(TFETs)":[2],"with":[3,101,130],"steep":[4,56],"subthreshold":[5,57],"slope":[6,58],"have":[7],"been":[8],"attracting":[9],"much":[10],"attention":[11],"as":[12],"building":[13],"blocks":[14],"for":[15,54,107],"future":[16],"low-power":[17],"integrated":[18],"circuits":[19],"and":[20,84,86,133,137],"CMOS":[21],"technology":[22],"devices.":[23],"Here":[24,115],"we":[25,116],"report":[26],"on":[27,48,118],"recent":[28,119],"advances":[29,120],"in":[30,121],"vertical":[31,123],"TFETs":[32,124],"using":[33,125],"III\u2013V/Si":[34,61],"heterojunctions.":[35],"These":[36],"heterojunctions,":[37],"which":[38],"are":[39,50],"formed":[40],"by":[41,78,92],"direct":[42],"integration":[43],"of":[44,68,82,109],"III\u2013V":[45,83,94,127],"nanowires":[46],"(NWs)":[47],"Si,":[49,85],"promising":[51],"tunnel":[52,110],"junction":[53],"achieving":[55],"(SS).":[59],"The":[60],"heterojunction":[62,129],"inherently":[63],"forms":[64],"abrupt":[65],"junctions":[66],"regardless":[67],"precise":[69],"doping":[70],"technique":[71],"because":[72],"the":[73,80,93,122,126],"band":[74],"discontinuity":[75],"is":[76],"determined":[77],"only":[79],"offset":[81],"depletion":[87],"region":[88],"can":[89,112],"be":[90,113],"controlled":[91],"MOS":[95],"structure.":[96],"Thus,":[97],"good":[98],"gate-electrostatic":[99],"control":[100],"a":[102],"large":[103],"internal":[104],"electrical":[105],"field":[106],"modulation":[108],"transport":[111],"achieved.":[114],"repot":[117],"NW/Si":[128],"surrounding-gate":[131],"architecture":[132],"demonstrate":[134],"steep-SS":[135],"behavior":[136],"very":[138],"low":[139],"parasitic":[140],"leakage":[141],"current.":[142]},"counts_by_year":[{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1}],"updated_date":"2026-04-21T08:09:41.155169","created_date":"2025-10-10T00:00:00"}