{"id":"https://openalex.org/W2538856466","doi":"https://doi.org/10.1109/essderc.2016.7599661","title":"Supersteep retrograde doping in ferroelectric MOSFETs for sub-60mV/dec subthreshold swing","display_name":"Supersteep retrograde doping in ferroelectric MOSFETs for sub-60mV/dec subthreshold swing","publication_year":2016,"publication_date":"2016-09-01","ids":{"openalex":"https://openalex.org/W2538856466","doi":"https://doi.org/10.1109/essderc.2016.7599661","mag":"2538856466"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2016.7599661","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2016.7599661","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 46th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5038281784","display_name":"Tommaso Rollo","orcid":"https://orcid.org/0000-0002-9831-9639"},"institutions":[{"id":"https://openalex.org/I129043915","display_name":"University of Udine","ror":"https://ror.org/05ht0mh31","country_code":"IT","type":"education","lineage":["https://openalex.org/I129043915"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Tommaso Rollo","raw_affiliation_strings":["DPIA, University of Udine, Udine"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DPIA, University of Udine, Udine","institution_ids":["https://openalex.org/I129043915"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5022109981","display_name":"David Esseni","orcid":"https://orcid.org/0000-0002-3468-5197"},"institutions":[{"id":"https://openalex.org/I129043915","display_name":"University of Udine","ror":"https://ror.org/05ht0mh31","country_code":"IT","type":"education","lineage":["https://openalex.org/I129043915"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"David Esseni","raw_affiliation_strings":["DPIA, University of Udine, Udine"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DPIA, University of Udine, Udine","institution_ids":["https://openalex.org/I129043915"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.3021,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.82960481,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"360","last_page":"363"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.8319015502929688},{"id":"https://openalex.org/keywords/subthreshold-swing","display_name":"Subthreshold swing","score":0.7443833351135254},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5581877827644348},{"id":"https://openalex.org/keywords/swing","display_name":"Swing","score":0.5538861155509949},{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.5474843978881836},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.5184771418571472},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5134895443916321},{"id":"https://openalex.org/keywords/doping","display_name":"Doping","score":0.5052075982093811},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5008707046508789},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.490940123796463},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.48414215445518494},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4519875943660736},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3577248454093933},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17551571130752563}],"concepts":[{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.8319015502929688},{"id":"https://openalex.org/C2982823382","wikidata":"https://www.wikidata.org/wiki/Q7632226","display_name":"Subthreshold swing","level":5,"score":0.7443833351135254},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5581877827644348},{"id":"https://openalex.org/C65655974","wikidata":"https://www.wikidata.org/wiki/Q14867674","display_name":"Swing","level":2,"score":0.5538861155509949},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.5474843978881836},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.5184771418571472},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5134895443916321},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5052075982093811},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5008707046508789},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.490940123796463},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.48414215445518494},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4519875943660736},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3577248454093933},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17551571130752563},{"id":"https://openalex.org/C24890656","wikidata":"https://www.wikidata.org/wiki/Q82811","display_name":"Acoustics","level":1,"score":0.0},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/essderc.2016.7599661","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2016.7599661","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 46th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},{"id":"pmh:oai:air.uniud.it:11390/1090631","is_oa":false,"landing_page_url":"http://hdl.handle.net/11390/1090631","pdf_url":null,"source":{"id":"https://openalex.org/S4306401163","display_name":"Institutional Research Information System (University of Udine)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I129043915","host_organization_name":"University of Udine","host_organization_lineage":["https://openalex.org/I129043915"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"info:eu-repo/semantics/conferenceObject"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.49000000953674316,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W1134015832","https://openalex.org/W1522583081","https://openalex.org/W1625170149","https://openalex.org/W1661368752","https://openalex.org/W1965518133","https://openalex.org/W1985427548","https://openalex.org/W2012512650","https://openalex.org/W2016106189","https://openalex.org/W2016820881","https://openalex.org/W2047404464","https://openalex.org/W2060612942","https://openalex.org/W4238618429"],"related_works":["https://openalex.org/W2095374523","https://openalex.org/W2545133822","https://openalex.org/W2791897932","https://openalex.org/W2010066109","https://openalex.org/W2009852498","https://openalex.org/W2545707786","https://openalex.org/W2340131852","https://openalex.org/W2470478960","https://openalex.org/W2286143580","https://openalex.org/W2532553827"],"abstract_inverted_index":{"We":[0],"present":[1],"a":[2,19,27,70],"simulation":[3],"study":[4],"addressing":[5],"the":[6,49,54,79],"physics":[7],"and":[8,52],"design":[9],"of":[10,64],"ferroelectric":[11,37],"MOSFETs":[12,38],"and,":[13],"in":[14],"particular,":[15],"we":[16],"argue":[17],"that":[18,36],"retrograde":[20],"channel":[21],"doping":[22],"profile":[23],"may":[24],"help":[25],"obtain":[26],"subthreshold":[28],"swing":[29,72],"well":[30],"below":[31],"60mV/dec.":[32],"Our":[33],"analysis":[34],"suggests":[35],"should":[39],"be":[40],"operated":[41],"at":[42],"gate":[43],"voltages":[44],"smaller":[45],"than":[46],"those":[47],"triggering":[48],"hysteretic":[50],"behavior,":[51],"have":[53],"potential":[55],"to":[56,60],"realize":[57],"on":[58],"current":[59,62],"off":[61],"ratios":[63],"10":[65],"<sup":[66],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[67],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">6</sup>":[68],"with":[69],"voltage":[71],"as":[73,75],"small":[74,83],"0.2V,":[76],"which":[77],"is":[78],"ultimate":[80],"goal":[81],"for":[82],"slope":[84],"transistors.":[85]},"counts_by_year":[{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":3},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":2}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}