{"id":"https://openalex.org/W2536013149","doi":"https://doi.org/10.1109/essderc.2016.7599658","title":"Steep slope transistors: Tunnel FETs and beyond","display_name":"Steep slope transistors: Tunnel FETs and beyond","publication_year":2016,"publication_date":"2016-09-01","ids":{"openalex":"https://openalex.org/W2536013149","doi":"https://doi.org/10.1109/essderc.2016.7599658","mag":"2536013149"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2016.7599658","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2016.7599658","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 46th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5053232492","display_name":"Alan Seabaugh","orcid":"https://orcid.org/0000-0001-6907-4129"},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Alan Seabaugh","raw_affiliation_strings":["Department of Electrical Engineering, University of Notre Dame, Notre Dame, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, University of Notre Dame, Notre Dame, USA","institution_ids":["https://openalex.org/I107639228"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032419942","display_name":"Cristobal Alessandri","orcid":"https://orcid.org/0000-0002-2527-5292"},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Cristobal Alessandri","raw_affiliation_strings":["Department of Electrical Engineering, University of Notre Dame, Notre Dame, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, University of Notre Dame, Notre Dame, USA","institution_ids":["https://openalex.org/I107639228"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062127672","display_name":"Mina Asghari Heidarlou","orcid":"https://orcid.org/0000-0002-9841-6359"},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Mina Asghari Heidarlou","raw_affiliation_strings":["Department of Electrical Engineering, University of Notre Dame, Notre Dame, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, University of Notre Dame, Notre Dame, USA","institution_ids":["https://openalex.org/I107639228"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032652013","display_name":"Huamin Li","orcid":"https://orcid.org/0000-0001-7093-4835"},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Hua-Min Li","raw_affiliation_strings":["Department of Electrical Engineering, University of Notre Dame, Notre Dame, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, University of Notre Dame, Notre Dame, USA","institution_ids":["https://openalex.org/I107639228"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002640454","display_name":"Leitao Liu","orcid":null},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Leitao Liu","raw_affiliation_strings":["Department of Electrical Engineering, University of Notre Dame, Notre Dame, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, University of Notre Dame, Notre Dame, USA","institution_ids":["https://openalex.org/I107639228"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051447109","display_name":"Hao L\u00fc","orcid":"https://orcid.org/0000-0002-7338-2295"},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Hao Lu","raw_affiliation_strings":["Department of Electrical Engineering, University of Notre Dame, Notre Dame, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, University of Notre Dame, Notre Dame, USA","institution_ids":["https://openalex.org/I107639228"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085781139","display_name":"Sara Fathipour","orcid":null},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sara Fathipour","raw_affiliation_strings":["Department of Electrical Engineering, University of Notre Dame, Notre Dame, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, University of Notre Dame, Notre Dame, USA","institution_ids":["https://openalex.org/I107639228"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047596394","display_name":"Paolo Paletti","orcid":"https://orcid.org/0000-0002-8131-6538"},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Paolo Paletti","raw_affiliation_strings":["Department of Electrical Engineering, University of Notre Dame, Notre Dame, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, University of Notre Dame, Notre Dame, USA","institution_ids":["https://openalex.org/I107639228"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062654463","display_name":"Pratyush Pandey","orcid":"https://orcid.org/0000-0001-9368-3100"},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Pratyush Pandey","raw_affiliation_strings":["Department of Electrical Engineering, University of Notre Dame, Notre Dame, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, University of Notre Dame, Notre Dame, USA","institution_ids":["https://openalex.org/I107639228"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5055804223","display_name":"Trond Ytterdal","orcid":"https://orcid.org/0000-0002-2109-833X"},"institutions":[{"id":"https://openalex.org/I204778367","display_name":"Norwegian University of Science and Technology","ror":"https://ror.org/05xg72x27","country_code":"NO","type":"education","lineage":["https://openalex.org/I204778367"]}],"countries":["NO"],"is_corresponding":false,"raw_author_name":"Trond Ytterdal","raw_affiliation_strings":["Department of Electronics and Telecommunications, Norwegian University of Science and Technology, Trondheim, Norway"],"affiliations":[{"raw_affiliation_string":"Department of Electronics and Telecommunications, Norwegian University of Science and Technology, Trondheim, Norway","institution_ids":["https://openalex.org/I204778367"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":10,"corresponding_author_ids":["https://openalex.org/A5053232492"],"corresponding_institution_ids":["https://openalex.org/I107639228"],"apc_list":null,"apc_paid":null,"fwci":1.8376,"has_fulltext":false,"cited_by_count":19,"citation_normalized_percentile":{"value":0.8691729,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"349","last_page":"351"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.7331302762031555},{"id":"https://openalex.org/keywords/subthreshold-slope","display_name":"Subthreshold slope","score":0.7034028172492981},{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.5803817510604858},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5321249961853027},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5047296285629272},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4579135775566101},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4533509612083435},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.3840488791465759},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.3503623604774475},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3242901563644409}],"concepts":[{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.7331302762031555},{"id":"https://openalex.org/C103566474","wikidata":"https://www.wikidata.org/wiki/Q7632226","display_name":"Subthreshold slope","level":5,"score":0.7034028172492981},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.5803817510604858},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5321249961853027},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5047296285629272},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4579135775566101},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4533509612083435},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.3840488791465759},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.3503623604774475},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3242901563644409}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc.2016.7599658","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2016.7599658","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 46th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/11","display_name":"Sustainable cities and communities","score":0.550000011920929}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":43,"referenced_works":["https://openalex.org/W1199176172","https://openalex.org/W1967588736","https://openalex.org/W1971211199","https://openalex.org/W1978905540","https://openalex.org/W1979721107","https://openalex.org/W1990987606","https://openalex.org/W2009624223","https://openalex.org/W2013311995","https://openalex.org/W2013468429","https://openalex.org/W2016106189","https://openalex.org/W2019063764","https://openalex.org/W2020600888","https://openalex.org/W2030898407","https://openalex.org/W2037187466","https://openalex.org/W2040475153","https://openalex.org/W2047268472","https://openalex.org/W2058145070","https://openalex.org/W2060612942","https://openalex.org/W2066041427","https://openalex.org/W2073518003","https://openalex.org/W2075586275","https://openalex.org/W2086880071","https://openalex.org/W2092440676","https://openalex.org/W2093950219","https://openalex.org/W2135827787","https://openalex.org/W2163114807","https://openalex.org/W2165877808","https://openalex.org/W2192681950","https://openalex.org/W2255958598","https://openalex.org/W2290702954","https://openalex.org/W2292558218","https://openalex.org/W2314534671","https://openalex.org/W2331604441","https://openalex.org/W2340265561","https://openalex.org/W2342750693","https://openalex.org/W2411008411","https://openalex.org/W2425800401","https://openalex.org/W2504958961","https://openalex.org/W2516368262","https://openalex.org/W2563993532","https://openalex.org/W3102102085","https://openalex.org/W3104750808","https://openalex.org/W6696711739"],"related_works":["https://openalex.org/W1186362247","https://openalex.org/W2000425643","https://openalex.org/W2062767191","https://openalex.org/W2105853365","https://openalex.org/W2117738807","https://openalex.org/W1978942334","https://openalex.org/W4231458110","https://openalex.org/W2786811717","https://openalex.org/W1980973127","https://openalex.org/W4220771873"],"abstract_inverted_index":{"Low":[0],"voltage":[1],"transistors":[2],"are":[3],"being":[4],"developed":[5],"to":[6],"achieve":[7],"steep,":[8],"less":[9],"than":[10],"60":[11],"mV/decade,":[12],"subthreshold":[13],"swings":[14],"at":[15],"room":[16],"temperature.":[17],"This":[18],"paper":[19],"outlines":[20],"progress,":[21],"technical":[22],"challenges,":[23],"and":[24],"applications":[25],"for":[26],"these":[27],"devices.":[28]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":5},{"year":2019,"cited_by_count":5},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":3}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}