{"id":"https://openalex.org/W2535172286","doi":"https://doi.org/10.1109/essderc.2016.7599644","title":"Floating gate memory based on MoS&lt;inf&gt;2&lt;/inf&gt; channel and iCVD polymer tunneling dielectric","display_name":"Floating gate memory based on MoS&lt;inf&gt;2&lt;/inf&gt; channel and iCVD polymer tunneling dielectric","publication_year":2016,"publication_date":"2016-09-01","ids":{"openalex":"https://openalex.org/W2535172286","doi":"https://doi.org/10.1109/essderc.2016.7599644","mag":"2535172286"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2016.7599644","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2016.7599644","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 46th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5058886938","display_name":"Myung Hun Woo","orcid":null},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Myung Hun Woo","raw_affiliation_strings":["School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Korea"],"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Korea","institution_ids":["https://openalex.org/I157485424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015276364","display_name":"Byung Chul Jang","orcid":"https://orcid.org/0000-0002-2254-7918"},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Byung Chul Jang","raw_affiliation_strings":["School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Korea"],"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Korea","institution_ids":["https://openalex.org/I157485424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039992525","display_name":"Junhwan Choi","orcid":"https://orcid.org/0000-0002-9052-4267"},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Junhwan Choi","raw_affiliation_strings":["Departmemt of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Korea"],"affiliations":[{"raw_affiliation_string":"Departmemt of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Korea","institution_ids":["https://openalex.org/I157485424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5024880418","display_name":"Gwang Hyuk Shin","orcid":null},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Gwang Hyuk Shin","raw_affiliation_strings":["School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Korea"],"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Korea","institution_ids":["https://openalex.org/I157485424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5038955440","display_name":"Hyejeong Seong","orcid":"https://orcid.org/0000-0002-9877-296X"},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyejeong Seong","raw_affiliation_strings":["Departmemt of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Korea"],"affiliations":[{"raw_affiliation_string":"Departmemt of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Korea","institution_ids":["https://openalex.org/I157485424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014240047","display_name":"Sung Gap Im","orcid":"https://orcid.org/0000-0002-2802-6398"},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sung Gap Im","raw_affiliation_strings":["Departmemt of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Korea"],"affiliations":[{"raw_affiliation_string":"Departmemt of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Korea","institution_ids":["https://openalex.org/I157485424"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5040506769","display_name":"Sung\u2010Yool Choi","orcid":"https://orcid.org/0000-0002-0960-7146"},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sung-Yool Choi","raw_affiliation_strings":["School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Korea"],"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Korea","institution_ids":["https://openalex.org/I157485424"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5058886938"],"corresponding_institution_ids":["https://openalex.org/I157485424"],"apc_list":null,"apc_paid":null,"fwci":0.1549,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.55052353,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"60","issue":null,"first_page":"295","last_page":"298"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/quantum-tunnelling","display_name":"Quantum tunnelling","score":0.5657128095626831},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.5573295950889587},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5438348650932312},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.4984879493713379},{"id":"https://openalex.org/keywords/high-\u03ba-dielectric","display_name":"High-\u03ba dielectric","score":0.4967730641365051},{"id":"https://openalex.org/keywords/metal-gate","display_name":"Metal gate","score":0.4503558576107025},{"id":"https://openalex.org/keywords/nanoparticle","display_name":"Nanoparticle","score":0.4476088583469391},{"id":"https://openalex.org/keywords/atomic-layer-deposition","display_name":"Atomic layer deposition","score":0.4410717487335205},{"id":"https://openalex.org/keywords/polymer","display_name":"Polymer","score":0.4305768311023712},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.40804457664489746},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.40435469150543213},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.3447258472442627},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3424130380153656},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.34120747447013855},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.3343160152435303},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.231163889169693},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.15884384512901306},{"id":"https://openalex.org/keywords/organic-chemistry","display_name":"Organic chemistry","score":0.12079337239265442},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.11614930629730225},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.11063158512115479}],"concepts":[{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.5657128095626831},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.5573295950889587},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5438348650932312},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.4984879493713379},{"id":"https://openalex.org/C16317505","wikidata":"https://www.wikidata.org/wiki/Q132013","display_name":"High-\u03ba dielectric","level":3,"score":0.4967730641365051},{"id":"https://openalex.org/C51140833","wikidata":"https://www.wikidata.org/wiki/Q6822740","display_name":"Metal gate","level":5,"score":0.4503558576107025},{"id":"https://openalex.org/C155672457","wikidata":"https://www.wikidata.org/wiki/Q61231","display_name":"Nanoparticle","level":2,"score":0.4476088583469391},{"id":"https://openalex.org/C69544855","wikidata":"https://www.wikidata.org/wiki/Q757625","display_name":"Atomic layer deposition","level":3,"score":0.4410717487335205},{"id":"https://openalex.org/C521977710","wikidata":"https://www.wikidata.org/wiki/Q81163","display_name":"Polymer","level":2,"score":0.4305768311023712},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.40804457664489746},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.40435469150543213},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3447258472442627},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3424130380153656},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.34120747447013855},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3343160152435303},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.231163889169693},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.15884384512901306},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.12079337239265442},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.11614930629730225},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.11063158512115479},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc.2016.7599644","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2016.7599644","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 46th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.5600000023841858}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1965193395","https://openalex.org/W1969314684","https://openalex.org/W2016850415","https://openalex.org/W2021994802","https://openalex.org/W2022063252","https://openalex.org/W2053491312","https://openalex.org/W2097467073","https://openalex.org/W2122246231","https://openalex.org/W2135933491","https://openalex.org/W2144088175","https://openalex.org/W2406213579"],"related_works":["https://openalex.org/W2796938634","https://openalex.org/W2071712090","https://openalex.org/W1973221791","https://openalex.org/W2287887285","https://openalex.org/W1716862708","https://openalex.org/W2013679759","https://openalex.org/W2167406464","https://openalex.org/W1589267155","https://openalex.org/W2617048030","https://openalex.org/W2167328579"],"abstract_inverted_index":{"We":[0],"investigated":[1],"the":[2,39,145],"floating":[3,41,103,148],"gate":[4,42,94,104,149],"memory":[5,43,105,109,150],"based":[6,151],"on":[7,152],"MoS":[8,153],"<sub":[9,75,79,132,154],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[10,76,80,133,155],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sub>":[11,77,156],"channel":[12],"with":[13,111,127],"metal":[14],"nanoparticle":[15],"charge":[16,60],"trapping":[17,61],"layer":[18,30,88],"and":[19,26,56,119],"polymer":[20,28],"tunneling":[21],"dielectric.":[22],"Here,":[23],"highly":[24],"conformal":[25],"stable":[27],"insulator":[29],"deposited":[31,85],"via":[32,68,86],"initiated":[33],"chemical":[34],"vapor":[35],"deposition":[36,89],"(iCVD)":[37],"facilitates":[38],"fabricated":[40,102],"to":[44,92],"endure":[45],"a":[46,53,112,128,141],"substantial":[47],"electrical":[48],"stress":[49],"significantly.":[50],"To":[51],"form":[52],"selective":[54],"density":[55],"controllable":[57],"distribution":[58],"of":[59,65,147],"layer,":[62],"different":[63],"thickness":[64],"gold":[66],"nanoparticles":[67],"thermal":[69],"evaporation":[70],"method":[71],"was":[72],"used.":[73],"Al":[74],"O":[78],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">3</sub>":[81],"blocking":[82],"dielectric":[83],"is":[84],"atomic":[87],"(ALD)":[90],"process":[91],"increase":[93],"coupling":[95],"ratio":[96,115],"for":[97,123,144],"low":[98],"power":[99],"operation.":[100],"The":[101],"device":[106],"exhibits":[107],"tunable":[108],"window":[110],"high":[113],"on/off":[114],"after":[116],"applied":[117],"programming":[118],"erasing":[120],"pulse,":[121],"allowing":[122],"multi-bit":[124],"data":[125],"storage":[126],"long":[129],"retention":[130],"I":[131],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">on/off</sub>":[134],"ratio.":[135],"All":[136],"these":[137],"results":[138],"will":[139],"be":[140],"foundation":[142],"stone":[143],"development":[146],".":[157]},"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2018,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}