{"id":"https://openalex.org/W2536716676","doi":"https://doi.org/10.1109/essderc.2016.7599635","title":"Comprehensive study of random telegraph noise in base and collector of advanced SiGe HBT: Bias, geometry and trap locations","display_name":"Comprehensive study of random telegraph noise in base and collector of advanced SiGe HBT: Bias, geometry and trap locations","publication_year":2016,"publication_date":"2016-09-01","ids":{"openalex":"https://openalex.org/W2536716676","doi":"https://doi.org/10.1109/essderc.2016.7599635","mag":"2536716676"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2016.7599635","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2016.7599635","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 46th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"preprint","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5046300816","display_name":"C. Mukherjee","orcid":"https://orcid.org/0000-0002-8206-2779"},"institutions":[{"id":"https://openalex.org/I15057530","display_name":"Universit\u00e9 de Bordeaux","ror":"https://ror.org/057qpr032","country_code":"FR","type":"education","lineage":["https://openalex.org/I15057530"]},{"id":"https://openalex.org/I4210157089","display_name":"Laboratoire de l'Int\u00e9gration du Mat\u00e9riau au Syst\u00e8me","ror":"https://ror.org/04nabhy78","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I1294671590","https://openalex.org/I15057530","https://openalex.org/I4210091158","https://openalex.org/I4210095849","https://openalex.org/I4210157089","https://openalex.org/I4210160189"]},{"id":"https://openalex.org/I4210160189","display_name":"Institut Polytechnique de Bordeaux","ror":"https://ror.org/054qv7y42","country_code":"FR","type":"education","lineage":["https://openalex.org/I4210160189"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"C. Mukherjee","raw_affiliation_strings":["IMS Laboratory, University of Bordeaux, Talence, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMS Laboratory, University of Bordeaux, Talence, France","institution_ids":["https://openalex.org/I4210157089","https://openalex.org/I4210160189","https://openalex.org/I15057530"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037017001","display_name":"Thomas Jacquet","orcid":"https://orcid.org/0000-0002-1993-6744"},"institutions":[{"id":"https://openalex.org/I15057530","display_name":"Universit\u00e9 de Bordeaux","ror":"https://ror.org/057qpr032","country_code":"FR","type":"education","lineage":["https://openalex.org/I15057530"]},{"id":"https://openalex.org/I4210157089","display_name":"Laboratoire de l'Int\u00e9gration du Mat\u00e9riau au Syst\u00e8me","ror":"https://ror.org/04nabhy78","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I1294671590","https://openalex.org/I15057530","https://openalex.org/I4210091158","https://openalex.org/I4210095849","https://openalex.org/I4210157089","https://openalex.org/I4210160189"]},{"id":"https://openalex.org/I4210160189","display_name":"Institut Polytechnique de Bordeaux","ror":"https://ror.org/054qv7y42","country_code":"FR","type":"education","lineage":["https://openalex.org/I4210160189"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"T. Jacquet","raw_affiliation_strings":["IMS Laboratory, University of Bordeaux, Talence, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMS Laboratory, University of Bordeaux, Talence, France","institution_ids":["https://openalex.org/I4210157089","https://openalex.org/I4210160189","https://openalex.org/I15057530"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008160362","display_name":"Thomas Zimmer","orcid":"https://orcid.org/0000-0002-4311-0969"},"institutions":[{"id":"https://openalex.org/I15057530","display_name":"Universit\u00e9 de Bordeaux","ror":"https://ror.org/057qpr032","country_code":"FR","type":"education","lineage":["https://openalex.org/I15057530"]},{"id":"https://openalex.org/I4210157089","display_name":"Laboratoire de l'Int\u00e9gration du Mat\u00e9riau au Syst\u00e8me","ror":"https://ror.org/04nabhy78","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I1294671590","https://openalex.org/I15057530","https://openalex.org/I4210091158","https://openalex.org/I4210095849","https://openalex.org/I4210157089","https://openalex.org/I4210160189"]},{"id":"https://openalex.org/I4210160189","display_name":"Institut Polytechnique de Bordeaux","ror":"https://ror.org/054qv7y42","country_code":"FR","type":"education","lineage":["https://openalex.org/I4210160189"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"T. Zimmer","raw_affiliation_strings":["IMS Laboratory, University of Bordeaux, Talence, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMS Laboratory, University of Bordeaux, Talence, France","institution_ids":["https://openalex.org/I4210157089","https://openalex.org/I4210160189","https://openalex.org/I15057530"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088672720","display_name":"Cristell Maneux","orcid":"https://orcid.org/0000-0001-9125-5372"},"institutions":[{"id":"https://openalex.org/I15057530","display_name":"Universit\u00e9 de Bordeaux","ror":"https://ror.org/057qpr032","country_code":"FR","type":"education","lineage":["https://openalex.org/I15057530"]},{"id":"https://openalex.org/I4210157089","display_name":"Laboratoire de l'Int\u00e9gration du Mat\u00e9riau au Syst\u00e8me","ror":"https://ror.org/04nabhy78","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I1294671590","https://openalex.org/I15057530","https://openalex.org/I4210091158","https://openalex.org/I4210095849","https://openalex.org/I4210157089","https://openalex.org/I4210160189"]},{"id":"https://openalex.org/I4210160189","display_name":"Institut Polytechnique de Bordeaux","ror":"https://ror.org/054qv7y42","country_code":"FR","type":"education","lineage":["https://openalex.org/I4210160189"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"C. Maneux","raw_affiliation_strings":["IMS Laboratory, University of Bordeaux, Talence, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMS Laboratory, University of Bordeaux, Talence, France","institution_ids":["https://openalex.org/I4210157089","https://openalex.org/I4210160189","https://openalex.org/I15057530"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5013987317","display_name":"Anjan Chakravorty","orcid":"https://orcid.org/0000-0002-5253-8975"},"institutions":[{"id":"https://openalex.org/I24676775","display_name":"Indian Institute of Technology Madras","ror":"https://ror.org/03v0r5n49","country_code":"IN","type":"education","lineage":["https://openalex.org/I24676775"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"A. Chakravorty","raw_affiliation_strings":["Dept. of Electrical Engineering, Indian Institute of Technology, Madras, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electrical Engineering, Indian Institute of Technology, Madras, India","institution_ids":["https://openalex.org/I24676775"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060150225","display_name":"Josef Boeck","orcid":null},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"J. Boeck","raw_affiliation_strings":["Infineon Technologies, Neubiberg, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Infineon Technologies, Neubiberg, Germany","institution_ids":["https://openalex.org/I137594350"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5060917100","display_name":"Klaus Aufinger","orcid":"https://orcid.org/0000-0002-7884-7987"},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"K. Aufinger","raw_affiliation_strings":["Infineon Technologies, Neubiberg, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Infineon Technologies, Neubiberg, Germany","institution_ids":["https://openalex.org/I137594350"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":7,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.5581,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.72065149,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"260","last_page":"263"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/heterojunction-bipolar-transistor","display_name":"Heterojunction bipolar transistor","score":0.8050422668457031},{"id":"https://openalex.org/keywords/noise","display_name":"Noise (video)","score":0.7668310403823853},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.6118357181549072},{"id":"https://openalex.org/keywords/trap","display_name":"Trap (plumbing)","score":0.5753412842750549},{"id":"https://openalex.org/keywords/time-domain","display_name":"Time domain","score":0.5502187013626099},{"id":"https://openalex.org/keywords/flicker-noise","display_name":"Flicker noise","score":0.5093523263931274},{"id":"https://openalex.org/keywords/amplitude","display_name":"Amplitude","score":0.4988362789154053},{"id":"https://openalex.org/keywords/burst-noise","display_name":"Burst noise","score":0.4787675440311432},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.44502919912338257},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.42488569021224976},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.41978710889816284},{"id":"https://openalex.org/keywords/time-constant","display_name":"Time constant","score":0.41404181718826294},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.40294861793518066},{"id":"https://openalex.org/keywords/noise-measurement","display_name":"Noise measurement","score":0.3482612371444702},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.32321321964263916},{"id":"https://openalex.org/keywords/noise-floor","display_name":"Noise floor","score":0.31193816661834717},{"id":"https://openalex.org/keywords/noise-figure","display_name":"Noise figure","score":0.21876731514930725},{"id":"https://openalex.org/keywords/noise-reduction","display_name":"Noise reduction","score":0.21218928694725037},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.20485776662826538},{"id":"https://openalex.org/keywords/acoustics","display_name":"Acoustics","score":0.18830940127372742},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.16779807209968567},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.14219090342521667},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.13849467039108276}],"concepts":[{"id":"https://openalex.org/C173408217","wikidata":"https://www.wikidata.org/wiki/Q1428898","display_name":"Heterojunction bipolar transistor","level":5,"score":0.8050422668457031},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.7668310403823853},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.6118357181549072},{"id":"https://openalex.org/C121099081","wikidata":"https://www.wikidata.org/wiki/Q665580","display_name":"Trap (plumbing)","level":2,"score":0.5753412842750549},{"id":"https://openalex.org/C103824480","wikidata":"https://www.wikidata.org/wiki/Q185889","display_name":"Time domain","level":2,"score":0.5502187013626099},{"id":"https://openalex.org/C113873419","wikidata":"https://www.wikidata.org/wiki/Q1410810","display_name":"Flicker noise","level":5,"score":0.5093523263931274},{"id":"https://openalex.org/C180205008","wikidata":"https://www.wikidata.org/wiki/Q159190","display_name":"Amplitude","level":2,"score":0.4988362789154053},{"id":"https://openalex.org/C142083831","wikidata":"https://www.wikidata.org/wiki/Q2926532","display_name":"Burst noise","level":5,"score":0.4787675440311432},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.44502919912338257},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.42488569021224976},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.41978710889816284},{"id":"https://openalex.org/C81370116","wikidata":"https://www.wikidata.org/wiki/Q1335249","display_name":"Time constant","level":2,"score":0.41404181718826294},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.40294861793518066},{"id":"https://openalex.org/C29265498","wikidata":"https://www.wikidata.org/wiki/Q7047719","display_name":"Noise measurement","level":3,"score":0.3482612371444702},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.32321321964263916},{"id":"https://openalex.org/C187612029","wikidata":"https://www.wikidata.org/wiki/Q17083130","display_name":"Noise floor","level":4,"score":0.31193816661834717},{"id":"https://openalex.org/C112806910","wikidata":"https://www.wikidata.org/wiki/Q746825","display_name":"Noise figure","level":4,"score":0.21876731514930725},{"id":"https://openalex.org/C163294075","wikidata":"https://www.wikidata.org/wiki/Q581861","display_name":"Noise reduction","level":2,"score":0.21218928694725037},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.20485776662826538},{"id":"https://openalex.org/C24890656","wikidata":"https://www.wikidata.org/wiki/Q82811","display_name":"Acoustics","level":1,"score":0.18830940127372742},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.16779807209968567},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.14219090342521667},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.13849467039108276},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.0},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.0},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0},{"id":"https://openalex.org/C31972630","wikidata":"https://www.wikidata.org/wiki/Q844240","display_name":"Computer vision","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/essderc.2016.7599635","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2016.7599635","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 46th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},{"id":"pmh:oai:HAL:hal-01695274v1","is_oa":false,"landing_page_url":"https://hal.science/hal-01695274","pdf_url":null,"source":{"id":"https://openalex.org/S4406922276","display_name":"INRIA a CCSD electronic archive server","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"ESSDERC 2016 - 46th European Solid-State Device Research Conference, Sep 2016, Lausanne, France. ⟨10.1109/ESSDERC.2016.7599635⟩","raw_type":"Conference papers"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W2072288553","https://openalex.org/W2104194413","https://openalex.org/W2114072267","https://openalex.org/W2146532902","https://openalex.org/W2158932417","https://openalex.org/W2172148796","https://openalex.org/W2188438365"],"related_works":["https://openalex.org/W2014396867","https://openalex.org/W3021392142","https://openalex.org/W4236509694","https://openalex.org/W286594222","https://openalex.org/W1040920172","https://openalex.org/W2134436426","https://openalex.org/W3150676548","https://openalex.org/W2063959925","https://openalex.org/W2537439561","https://openalex.org/W3103835317"],"abstract_inverted_index":{"In":[0,18,67],"this":[1],"paper,":[2],"we":[3],"present":[4],"extensive":[5],"random":[6],"telegraph":[7],"signal":[8],"(RTS)":[9],"noise":[10,45,79,98],"characterization":[11],"in":[12,21,35,47,64,88],"advanced":[13],"SiGe:C":[14],"heterojunction":[15],"bipolar":[16],"transistors.":[17],"frequency":[19],"domain,":[20],"addition":[22],"to":[23,61],"1/f":[24],"noise,":[25],"generation-recombination":[26],"(G-R)":[27],"mechanisms":[28],"are":[29,103],"observed":[30,81],"at":[31],"low":[32],"base":[33,37],"bias":[34,101],"the":[36,68,72,86,89,112],"noise.":[38],"Their":[39],"existence":[40],"is":[41,80],"confirmed":[42],"by":[43],"RTS":[44,51,78,97],"measurements":[46],"time":[48,94],"domain.":[49],"The":[50],"amplitude":[52],"evolves":[53],"rather":[54],"slowly":[55],"with":[56],"bias,":[57],"indicating":[58],"their":[59,100],"mechanism":[60],"have":[62],"originated":[63],"peripheral":[65],"locations.":[66],"collector":[69],"side,":[70],"on":[71],"onset":[73],"of":[74,93,108],"high-current":[75],"effects,":[76],"distinct":[77],"that":[82,105],"possibly":[83],"originates":[84],"from":[85,96],"traps":[87],"trench":[90],"regions.":[91],"Extraction":[92],"constants":[95],"and":[99],"dependence":[102],"presented":[104],"provides":[106],"estimation":[107],"trap":[109],"location":[110],"within":[111],"device":[113],"structure.":[114]},"counts_by_year":[{"year":2022,"cited_by_count":2},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}