{"id":"https://openalex.org/W2535142047","doi":"https://doi.org/10.1109/essderc.2016.7599631","title":"CVD graphene-FET based cascode circuits: A design exploration and fabrication towards intrinsic gain enhancement","display_name":"CVD graphene-FET based cascode circuits: A design exploration and fabrication towards intrinsic gain enhancement","publication_year":2016,"publication_date":"2016-09-01","ids":{"openalex":"https://openalex.org/W2535142047","doi":"https://doi.org/10.1109/essderc.2016.7599631","mag":"2535142047"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2016.7599631","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2016.7599631","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 46th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://hdl.handle.net/2117/96408","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5085125471","display_name":"Mario Iannazzo","orcid":null},"institutions":[{"id":"https://openalex.org/I9617848","display_name":"Universitat Polit\u00e8cnica de Catalunya","ror":"https://ror.org/03mb6wj31","country_code":"ES","type":"education","lineage":["https://openalex.org/I9617848"]}],"countries":["ES"],"is_corresponding":true,"raw_author_name":"M. Iannazzo","raw_affiliation_strings":["Dep. of Electronics Engineering UPC BarcelonaTech., N3CAT Lab, Spain"],"affiliations":[{"raw_affiliation_string":"Dep. of Electronics Engineering UPC BarcelonaTech., N3CAT Lab, Spain","institution_ids":["https://openalex.org/I9617848"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033267870","display_name":"Eduard Alarc\u00f3n","orcid":"https://orcid.org/0000-0001-7663-7153"},"institutions":[{"id":"https://openalex.org/I9617848","display_name":"Universitat Polit\u00e8cnica de Catalunya","ror":"https://ror.org/03mb6wj31","country_code":"ES","type":"education","lineage":["https://openalex.org/I9617848"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"E. Alarcon","raw_affiliation_strings":["Dep. of Electronics Engineering UPC BarcelonaTech., N3CAT Lab, Spain"],"affiliations":[{"raw_affiliation_string":"Dep. of Electronics Engineering UPC BarcelonaTech., N3CAT Lab, Spain","institution_ids":["https://openalex.org/I9617848"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035746651","display_name":"Himadri Pandey","orcid":"https://orcid.org/0000-0002-7598-3668"},"institutions":[{"id":"https://openalex.org/I206895457","display_name":"University of Siegen","ror":"https://ror.org/02azyry73","country_code":"DE","type":"education","lineage":["https://openalex.org/I206895457"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"H. Pandey","raw_affiliation_strings":["Dep. of Electrical Engineering, University of Siegen, Germany"],"affiliations":[{"raw_affiliation_string":"Dep. of Electrical Engineering, University of Siegen, Germany","institution_ids":["https://openalex.org/I206895457"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039994134","display_name":"Vikram Passi","orcid":"https://orcid.org/0000-0003-0314-5734"},"institutions":[{"id":"https://openalex.org/I206895457","display_name":"University of Siegen","ror":"https://ror.org/02azyry73","country_code":"DE","type":"education","lineage":["https://openalex.org/I206895457"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"V. Passi","raw_affiliation_strings":["Dep. of Electrical Engineering, University of Siegen, Germany"],"affiliations":[{"raw_affiliation_string":"Dep. of Electrical Engineering, University of Siegen, Germany","institution_ids":["https://openalex.org/I206895457"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5087833312","display_name":"Max C. Lemme","orcid":"https://orcid.org/0000-0003-4552-2411"},"institutions":[{"id":"https://openalex.org/I206895457","display_name":"University of Siegen","ror":"https://ror.org/02azyry73","country_code":"DE","type":"education","lineage":["https://openalex.org/I206895457"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"M.C. Lemme","raw_affiliation_strings":["Dep. of Electrical Engineering, University of Siegen, Germany"],"affiliations":[{"raw_affiliation_string":"Dep. of Electrical Engineering, University of Siegen, Germany","institution_ids":["https://openalex.org/I206895457"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5085125471"],"corresponding_institution_ids":["https://openalex.org/I9617848"],"apc_list":null,"apc_paid":null,"fwci":0.3176,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.61610405,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"244","last_page":"247"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10382","display_name":"Quantum and electron transport phenomena","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transconductance","display_name":"Transconductance","score":0.513988196849823},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.49463531374931335},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.42811688780784607},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.3494800329208374},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.33802592754364014},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.2610167860984802},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17208486795425415}],"concepts":[{"id":"https://openalex.org/C2779283907","wikidata":"https://www.wikidata.org/wiki/Q1632964","display_name":"Transconductance","level":4,"score":0.513988196849823},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.49463531374931335},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.42811688780784607},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3494800329208374},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.33802592754364014},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2610167860984802},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17208486795425415},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/essderc.2016.7599631","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2016.7599631","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 46th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},{"id":"pmh:oai:upcommons.upc.edu:2117/96408","is_oa":true,"landing_page_url":"https://hdl.handle.net/2117/96408","pdf_url":null,"source":{"id":"https://openalex.org/S4210207057","display_name":"QRU Quaderns de Recerca en Urbanisme","issn_l":"2014-9689","issn":["2014-9689","2385-6777"],"is_oa":true,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/P4310322448","host_organization_name":"Q71272178","host_organization_lineage":["https://openalex.org/P4310322448"],"host_organization_lineage_names":["Q71272178"],"type":"journal"},"license":null,"license_id":null,"version":"acceptedVersion","is_accepted":true,"is_published":false,"raw_source_name":null,"raw_type":"Conference report"}],"best_oa_location":{"id":"pmh:oai:upcommons.upc.edu:2117/96408","is_oa":true,"landing_page_url":"https://hdl.handle.net/2117/96408","pdf_url":null,"source":{"id":"https://openalex.org/S4210207057","display_name":"QRU Quaderns de Recerca en Urbanisme","issn_l":"2014-9689","issn":["2014-9689","2385-6777"],"is_oa":true,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/P4310322448","host_organization_name":"Q71272178","host_organization_lineage":["https://openalex.org/P4310322448"],"host_organization_lineage_names":["Q71272178"],"type":"journal"},"license":null,"license_id":null,"version":"acceptedVersion","is_accepted":true,"is_published":false,"raw_source_name":null,"raw_type":"Conference report"},"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320324039","display_name":"Politecnico di Milano","ror":"https://ror.org/01nffqt88"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W1165061335","https://openalex.org/W1512254341","https://openalex.org/W1622061294","https://openalex.org/W1893470832","https://openalex.org/W1938844849","https://openalex.org/W1964160952","https://openalex.org/W1966150059","https://openalex.org/W1979574390","https://openalex.org/W2063715451","https://openalex.org/W2121990892","https://openalex.org/W2121993650","https://openalex.org/W2122702527","https://openalex.org/W3143538867","https://openalex.org/W6666808202"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W2548900738","https://openalex.org/W2366149815","https://openalex.org/W2024541028","https://openalex.org/W2551134471","https://openalex.org/W2083133874","https://openalex.org/W4388044664","https://openalex.org/W1963878710","https://openalex.org/W2329220286","https://openalex.org/W2029313290"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"the":[3,15,38],"design":[4,72,76],"exploration":[5,73],"of":[6,22,40,92],"a":[7,23,41,71,113],"basic":[8],"cascode":[9],"circuit":[10],"(CAS)":[11],"targeted":[12],"to":[13,51,69],"increase":[14],"intrinsic":[16],"gain":[17],"A":[18,105],"<sub":[19,33,94,100,106],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[20,34,95,101,107],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">\u03bd</sub>":[21,108],"graphene":[24],"field-effect-transistor":[25],"(GFET)":[26],"by":[27,60],"decreasing":[28],"its":[29],"output":[30],"conductance":[31],"g":[32,93,99],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">o</sub>":[35,96],".":[36,109],"First,":[37],"parameters":[39],"large-signal":[42],"compact-model,":[43],"based":[44],"on":[45,54],"drift-diffusion":[46],"carrier":[47],"transport,":[48],"are":[49,67,81,88,124],"fit":[50],"measurements":[52],"carried":[53],"2":[55],"CVD":[56],"GFETs,":[57],"fabricated":[58,82],"independently":[59],"different":[61],"research":[62],"groups.":[63],"Second,":[64],"CAS":[65,79,117],"circuits":[66,80],"simulated":[68],"perform":[70],"and":[74,83,103,118,122],"provide":[75],"guidelines.":[77],"Third,":[78],"consequently":[84],"measured.":[85],"Performance":[86],"metrics":[87],"provided":[89],"in":[90],"terms":[91],",":[97],"transconductance":[98],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">m</sub>":[102],"hence":[104],"Against":[110],"these":[111],"metrics,":[112],"quantitative":[114],"comparison":[115],"between":[116],"GFET":[119],"is":[120],"performed":[121],"conclusions":[123],"derived.":[125]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1}],"updated_date":"2026-03-20T23:20:44.827607","created_date":"2016-10-28T00:00:00"}