{"id":"https://openalex.org/W2538846327","doi":"https://doi.org/10.1109/essderc.2016.7599621","title":"600 V, low-leakage AlGaN/GaN MIS-HEMT on bulk GaN substrates","display_name":"600 V, low-leakage AlGaN/GaN MIS-HEMT on bulk GaN substrates","publication_year":2016,"publication_date":"2016-09-01","ids":{"openalex":"https://openalex.org/W2538846327","doi":"https://doi.org/10.1109/essderc.2016.7599621","mag":"2538846327"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2016.7599621","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2016.7599621","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 46th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5053612346","display_name":"Muhammad Alshahed","orcid":"https://orcid.org/0000-0003-3485-9764"},"institutions":[{"id":"https://openalex.org/I4210164948","display_name":"Institut f\u00fcr Mikroelektronik Stuttgart","ror":"https://ror.org/05kw00716","country_code":"DE","type":"nonprofit","lineage":["https://openalex.org/I4210164948"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"M. Alshahed","raw_affiliation_strings":["Institut f\u00fcr Mikroelektronik Stuttgart, Stuttgart, Germany"],"affiliations":[{"raw_affiliation_string":"Institut f\u00fcr Mikroelektronik Stuttgart, Stuttgart, Germany","institution_ids":["https://openalex.org/I4210164948"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018469351","display_name":"M. Alomari","orcid":"https://orcid.org/0000-0001-6489-2923"},"institutions":[{"id":"https://openalex.org/I4210164948","display_name":"Institut f\u00fcr Mikroelektronik Stuttgart","ror":"https://ror.org/05kw00716","country_code":"DE","type":"nonprofit","lineage":["https://openalex.org/I4210164948"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"M. Alomari","raw_affiliation_strings":["Institut f\u00fcr Mikroelektronik Stuttgart, Stuttgart, Germany"],"affiliations":[{"raw_affiliation_string":"Institut f\u00fcr Mikroelektronik Stuttgart, Stuttgart, Germany","institution_ids":["https://openalex.org/I4210164948"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057256675","display_name":"Christine Harendt","orcid":null},"institutions":[{"id":"https://openalex.org/I4210164948","display_name":"Institut f\u00fcr Mikroelektronik Stuttgart","ror":"https://ror.org/05kw00716","country_code":"DE","type":"nonprofit","lineage":["https://openalex.org/I4210164948"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"C. Harendt","raw_affiliation_strings":["Institut f\u00fcr Mikroelektronik Stuttgart, Stuttgart, Germany"],"affiliations":[{"raw_affiliation_string":"Institut f\u00fcr Mikroelektronik Stuttgart, Stuttgart, Germany","institution_ids":["https://openalex.org/I4210164948"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074267030","display_name":"Joachim N. Burghartz","orcid":"https://orcid.org/0000-0002-6013-6677"},"institutions":[{"id":"https://openalex.org/I4210164948","display_name":"Institut f\u00fcr Mikroelektronik Stuttgart","ror":"https://ror.org/05kw00716","country_code":"DE","type":"nonprofit","lineage":["https://openalex.org/I4210164948"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"J. N. Burghartz","raw_affiliation_strings":["Institut f\u00fcr Mikroelektronik Stuttgart, Stuttgart, Germany"],"affiliations":[{"raw_affiliation_string":"Institut f\u00fcr Mikroelektronik Stuttgart, Stuttgart, Germany","institution_ids":["https://openalex.org/I4210164948"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080904696","display_name":"Clemens W\u00e4chter","orcid":null},"institutions":[{"id":"https://openalex.org/I4210099255","display_name":"Azur Space Solar Power","ror":"https://ror.org/010x76r82","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210099255"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"C. Wachter","raw_affiliation_strings":["AZUR SPACE Solar Power GmbH, Technology epitaxial materials, Heilbronn, Germany"],"affiliations":[{"raw_affiliation_string":"AZUR SPACE Solar Power GmbH, Technology epitaxial materials, Heilbronn, Germany","institution_ids":["https://openalex.org/I4210099255"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047315570","display_name":"T. Bergunde","orcid":null},"institutions":[{"id":"https://openalex.org/I4210099255","display_name":"Azur Space Solar Power","ror":"https://ror.org/010x76r82","country_code":"DE","type":"company","lineage":["https://openalex.org/I4210099255"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"T. Bergunde","raw_affiliation_strings":["AZUR SPACE Solar Power GmbH, Technology epitaxial materials, Heilbronn, Germany"],"affiliations":[{"raw_affiliation_string":"AZUR SPACE Solar Power GmbH, Technology epitaxial materials, Heilbronn, Germany","institution_ids":["https://openalex.org/I4210099255"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111614385","display_name":"S. Lutgen","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"S. Lutgen","raw_affiliation_strings":["III-V Semiconductor Consulting, Dresden, Germany"],"affiliations":[{"raw_affiliation_string":"III-V Semiconductor Consulting, Dresden, Germany","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5053612346"],"corresponding_institution_ids":["https://openalex.org/I4210164948"],"apc_list":null,"apc_paid":null,"fwci":0.5315,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.69815657,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"71","issue":null,"first_page":"202","last_page":"205"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.8268557786941528},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.8185250759124756},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.731707751750946},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.6633135676383972},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.6108096837997437},{"id":"https://openalex.org/keywords/sapphire","display_name":"Sapphire","score":0.559727668762207},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.518817126750946},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.5161963105201721},{"id":"https://openalex.org/keywords/trapping","display_name":"Trapping","score":0.46149739623069763},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.45056644082069397},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.41698187589645386},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.38659539818763733},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.32941046357154846},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.32091522216796875},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2666581869125366},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.258015513420105},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.12433162331581116},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.07107529044151306},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.06578519940376282}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8268557786941528},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.8185250759124756},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.731707751750946},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.6633135676383972},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.6108096837997437},{"id":"https://openalex.org/C2780064504","wikidata":"https://www.wikidata.org/wiki/Q127583","display_name":"Sapphire","level":3,"score":0.559727668762207},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.518817126750946},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.5161963105201721},{"id":"https://openalex.org/C2777924906","wikidata":"https://www.wikidata.org/wiki/Q34168","display_name":"Trapping","level":2,"score":0.46149739623069763},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.45056644082069397},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.41698187589645386},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.38659539818763733},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.32941046357154846},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.32091522216796875},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2666581869125366},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.258015513420105},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.12433162331581116},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.07107529044151306},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.06578519940376282},{"id":"https://openalex.org/C18903297","wikidata":"https://www.wikidata.org/wiki/Q7150","display_name":"Ecology","level":1,"score":0.0},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc.2016.7599621","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2016.7599621","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 46th European Solid-State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.46000000834465027,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1989210356","https://openalex.org/W1998266613","https://openalex.org/W2011488820","https://openalex.org/W2040781908","https://openalex.org/W2047295367","https://openalex.org/W2063179918","https://openalex.org/W2067470011","https://openalex.org/W2106709050","https://openalex.org/W2111817772","https://openalex.org/W2139143467","https://openalex.org/W2156334786","https://openalex.org/W2169597935","https://openalex.org/W2197042504","https://openalex.org/W2322360575","https://openalex.org/W2532793419","https://openalex.org/W6729009128"],"related_works":["https://openalex.org/W2472160638","https://openalex.org/W3209950509","https://openalex.org/W2250343992","https://openalex.org/W3043337507","https://openalex.org/W2559825181","https://openalex.org/W4377089489","https://openalex.org/W1975307200","https://openalex.org/W4220740305","https://openalex.org/W1905863001","https://openalex.org/W2466508933"],"abstract_inverted_index":{"In":[0],"this":[1],"work":[2],"we":[3],"demonstrate,":[4],"for":[5,28],"the":[6,9,70],"first":[7],"time,":[8],"advantages":[10],"of":[11,33,55,69],"GaN":[12,16],"HEMTs":[13],"on":[14,22],"bulk":[15],"substrates":[17],"over":[18],"similarly":[19],"processed":[20],"devices":[21],"Sapphire":[23],"and":[24,35,46,58,73,77],"Silicon":[25],"substrates,":[26],"intended":[27],"power":[29],"applications,":[30],"in":[31,67],"terms":[32],"on-state":[34],"off-state":[36,44,59],"operation":[37],"as":[38,40],"well":[39],"reliability,":[41],"where":[42],"self-heating,":[43],"leakage,":[45],"trapping":[47],"effects":[48],"are":[49,65],"minimal.":[50],"MIS-HEMTs":[51],"with":[52],"breakdown":[53],"voltage":[54],"~670":[56],"V":[57],"leakage":[60],"current":[61],"below":[62],"1":[63],"\u03bcA/mm":[64],"obtained":[66],"spite":[68],"very":[71],"basic":[72],"simple":[74],"device":[75],"design":[76],"technology":[78],"used.":[79]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}