{"id":"https://openalex.org/W2072463899","doi":"https://doi.org/10.1109/essderc.2015.7324773","title":"Contact resistance extraction methods for CNTFETs","display_name":"Contact resistance extraction methods for CNTFETs","publication_year":2015,"publication_date":"2015-09-01","ids":{"openalex":"https://openalex.org/W2072463899","doi":"https://doi.org/10.1109/essderc.2015.7324773","mag":"2072463899"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2015.7324773","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2015.7324773","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 45th European Solid State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5050593788","display_name":"An\u00edbal Pacheco-S\u00e1nchez","orcid":"https://orcid.org/0000-0002-0897-0605"},"institutions":[{"id":"https://openalex.org/I78650965","display_name":"TU Dresden","ror":"https://ror.org/042aqky30","country_code":"DE","type":"education","lineage":["https://openalex.org/I78650965"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"Anibal Pacheco-Sanchez","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Technische Universit\u00e4t Dresden, Germany"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Technische Universit\u00e4t Dresden, Germany","institution_ids":["https://openalex.org/I78650965"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074918759","display_name":"Sven Mothes","orcid":"https://orcid.org/0000-0002-7621-4967"},"institutions":[{"id":"https://openalex.org/I78650965","display_name":"TU Dresden","ror":"https://ror.org/042aqky30","country_code":"DE","type":"education","lineage":["https://openalex.org/I78650965"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Sven Mothes","raw_affiliation_strings":["Center for Advancing Electronics Dresden, Technische Universit\u00e4t Dresden, Germany"],"affiliations":[{"raw_affiliation_string":"Center for Advancing Electronics Dresden, Technische Universit\u00e4t Dresden, Germany","institution_ids":["https://openalex.org/I78650965"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084366087","display_name":"Martin Claus","orcid":"https://orcid.org/0000-0001-8009-8463"},"institutions":[{"id":"https://openalex.org/I78650965","display_name":"TU Dresden","ror":"https://ror.org/042aqky30","country_code":"DE","type":"education","lineage":["https://openalex.org/I78650965"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Martin Claus","raw_affiliation_strings":["Center for Advancing Electronics Dresden, Technische Universit\u00e4t Dresden, Germany"],"affiliations":[{"raw_affiliation_string":"Center for Advancing Electronics Dresden, Technische Universit\u00e4t Dresden, Germany","institution_ids":["https://openalex.org/I78650965"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5035970449","display_name":"M. Schr\u00f6ter","orcid":"https://orcid.org/0000-0002-5432-716X"},"institutions":[{"id":"https://openalex.org/I36258959","display_name":"University of California, San Diego","ror":"https://ror.org/0168r3w48","country_code":"US","type":"education","lineage":["https://openalex.org/I36258959"]},{"id":"https://openalex.org/I78650965","display_name":"TU Dresden","ror":"https://ror.org/042aqky30","country_code":"DE","type":"education","lineage":["https://openalex.org/I78650965"]}],"countries":["DE","US"],"is_corresponding":false,"raw_author_name":"Michael SchrOter","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Technische Universit\u00e4t Dresden, Germany","Department of Electronics and Communication Engineering, University of California at San Diego, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Technische Universit\u00e4t Dresden, Germany","institution_ids":["https://openalex.org/I78650965"]},{"raw_affiliation_string":"Department of Electronics and Communication Engineering, University of California at San Diego, USA","institution_ids":["https://openalex.org/I36258959"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5050593788"],"corresponding_institution_ids":["https://openalex.org/I78650965"],"apc_list":null,"apc_paid":null,"fwci":0.3946,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.66855659,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"298","last_page":"301"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/contact-resistance","display_name":"Contact resistance","score":0.8288208246231079},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5880653262138367},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5773096680641174},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5437875390052795},{"id":"https://openalex.org/keywords/electrical-contacts","display_name":"Electrical contacts","score":0.48765861988067627},{"id":"https://openalex.org/keywords/carbon-nanotube-field-effect-transistor","display_name":"Carbon nanotube field-effect transistor","score":0.45815929770469666},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.43359896540641785},{"id":"https://openalex.org/keywords/function","display_name":"Function (biology)","score":0.4240257740020752},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.2911176383495331},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.280988484621048},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2601615786552429},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.25886213779449463},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2506569027900696},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.1636737585067749},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.13863512873649597}],"concepts":[{"id":"https://openalex.org/C123671423","wikidata":"https://www.wikidata.org/wiki/Q332329","display_name":"Contact resistance","level":3,"score":0.8288208246231079},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5880653262138367},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5773096680641174},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5437875390052795},{"id":"https://openalex.org/C132235601","wikidata":"https://www.wikidata.org/wiki/Q394001","display_name":"Electrical contacts","level":2,"score":0.48765861988067627},{"id":"https://openalex.org/C58916441","wikidata":"https://www.wikidata.org/wiki/Q1778563","display_name":"Carbon nanotube field-effect transistor","level":5,"score":0.45815929770469666},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.43359896540641785},{"id":"https://openalex.org/C14036430","wikidata":"https://www.wikidata.org/wiki/Q3736076","display_name":"Function (biology)","level":2,"score":0.4240257740020752},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.2911176383495331},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.280988484621048},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2601615786552429},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.25886213779449463},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2506569027900696},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.1636737585067749},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.13863512873649597},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C78458016","wikidata":"https://www.wikidata.org/wiki/Q840400","display_name":"Evolutionary biology","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc.2015.7324773","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2015.7324773","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 45th European Solid State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.5099999904632568}],"awards":[],"funders":[{"id":"https://openalex.org/F4320306076","display_name":"National Science Foundation","ror":"https://ror.org/021nxhr62"},{"id":"https://openalex.org/F4320320879","display_name":"Deutsche Forschungsgemeinschaft","ror":"https://ror.org/018mejw64"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W1997711570","https://openalex.org/W2003810056","https://openalex.org/W2020330572","https://openalex.org/W2039040364","https://openalex.org/W2064535872","https://openalex.org/W2086103622","https://openalex.org/W2135466786","https://openalex.org/W2165644842","https://openalex.org/W2313734303","https://openalex.org/W2313897397","https://openalex.org/W2318902229","https://openalex.org/W2499844158","https://openalex.org/W2513589482","https://openalex.org/W3022917606"],"related_works":["https://openalex.org/W2772065593","https://openalex.org/W2041759291","https://openalex.org/W2098002914","https://openalex.org/W2533086543","https://openalex.org/W2996426699","https://openalex.org/W4200261033","https://openalex.org/W2735298218","https://openalex.org/W4301184902","https://openalex.org/W2994951653","https://openalex.org/W2555149966"],"abstract_inverted_index":{"Three":[0],"different":[1],"methods":[2,62,113],"for":[3,43,57,108],"the":[4,7,13,23,37,58,78,85,99,109],"extraction":[5],"of":[6,22,34,91,111],"contact":[8,87,100],"resistance":[9,88,96],"based":[10,114],"on":[11,115],"both":[12],"well-known":[14],"transfer":[15],"length":[16],"method":[17,25,81],"(TLM)":[18],"and":[19,31,36,70],"two":[20],"variants":[21],"Y-function":[24,59,80],"have":[26,39,63],"been":[27,40,64],"applied":[28,65],"to":[29,66,83,98,120],"simulation":[30],"experimental":[32],"data":[33],"CNTFETs":[35,67],"results":[38],"compared.":[41],"While":[42],"TLM":[44],"special":[45],"CNT":[46],"test":[47],"structures":[48],"are":[49,55],"mandatory,":[50],"standard":[51,79],"electrical":[52],"device":[53],"characteristics":[54],"sufficient":[56],"methods.":[60],"The":[61],"with":[68],"low":[69],"high":[71,94],"channel":[72,95],"resistance.":[73],"It":[74],"turned":[75],"out":[76],"that":[77],"fails":[82],"deliver":[84],"correct":[86],"in":[89],"case":[90],"a":[92],"relatively":[93],"compared":[97],"resistances.":[101],"A":[102],"physical":[103],"validation":[104],"is":[105],"also":[106],"given":[107],"application":[110],"these":[112],"traditional":[116],"Si":[117],"MOSFET":[118],"theory":[119],"quasi-ballistic":[121],"CNTFETs.":[122]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2016,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}