{"id":"https://openalex.org/W1986207933","doi":"https://doi.org/10.1109/essderc.2015.7324704","title":"Ge/III-V MOS device technologies for low power integrated systems","display_name":"Ge/III-V MOS device technologies for low power integrated systems","publication_year":2015,"publication_date":"2015-09-01","ids":{"openalex":"https://openalex.org/W1986207933","doi":"https://doi.org/10.1109/essderc.2015.7324704","mag":"1986207933"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2015.7324704","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2015.7324704","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 45th European Solid State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5042410367","display_name":"Shinichi Takagi","orcid":"https://orcid.org/0000-0002-5601-2604"},"institutions":[{"id":"https://openalex.org/I74801974","display_name":"The University of Tokyo","ror":"https://ror.org/057zh3y96","country_code":"JP","type":"education","lineage":["https://openalex.org/I74801974"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shinichi Takagi","raw_affiliation_strings":["The University of Tokyo","The University of Tokyo, Department of Electrical Engineering and Information, Systems, School of Engineering, JST-CREST Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The University of Tokyo","institution_ids":["https://openalex.org/I74801974"]},{"raw_affiliation_string":"The University of Tokyo, Department of Electrical Engineering and Information, Systems, School of Engineering, JST-CREST Tokyo, Japan","institution_ids":["https://openalex.org/I74801974"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5025650947","display_name":"Mitsuru Takenaka","orcid":"https://orcid.org/0000-0002-9852-1474"},"institutions":[{"id":"https://openalex.org/I74801974","display_name":"The University of Tokyo","ror":"https://ror.org/057zh3y96","country_code":"JP","type":"education","lineage":["https://openalex.org/I74801974"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Mitsuru Takenaka","raw_affiliation_strings":["The University of Tokyo","The University of Tokyo, Department of Electrical Engineering and Information, Systems, School of Engineering, JST-CREST Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The University of Tokyo","institution_ids":["https://openalex.org/I74801974"]},{"raw_affiliation_string":"The University of Tokyo, Department of Electrical Engineering and Information, Systems, School of Engineering, JST-CREST Tokyo, Japan","institution_ids":["https://openalex.org/I74801974"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.6025,"has_fulltext":false,"cited_by_count":10,"citation_normalized_percentile":{"value":0.72386265,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":95},"biblio":{"volume":"61","issue":null,"first_page":"20","last_page":"25"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5367333889007568},{"id":"https://openalex.org/keywords/low-power-electronics","display_name":"Low-power electronics","score":0.45434093475341797},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4456711411476135},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.41328752040863037},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.40643537044525146},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3782733678817749},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3658367395401001},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.29737311601638794},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.18656235933303833},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.14373520016670227}],"concepts":[{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5367333889007568},{"id":"https://openalex.org/C117551214","wikidata":"https://www.wikidata.org/wiki/Q6692774","display_name":"Low-power electronics","level":4,"score":0.45434093475341797},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4456711411476135},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.41328752040863037},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.40643537044525146},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3782733678817749},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3658367395401001},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.29737311601638794},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.18656235933303833},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.14373520016670227},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc.2015.7324704","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2015.7324704","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 45th European Solid State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.550000011920929,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":28,"referenced_works":["https://openalex.org/W1185093170","https://openalex.org/W1933196443","https://openalex.org/W1974789415","https://openalex.org/W1978194704","https://openalex.org/W1981175552","https://openalex.org/W1986222701","https://openalex.org/W1995488194","https://openalex.org/W2000828913","https://openalex.org/W2002849752","https://openalex.org/W2018191826","https://openalex.org/W2021423303","https://openalex.org/W2022395165","https://openalex.org/W2031580556","https://openalex.org/W2047553858","https://openalex.org/W2059764807","https://openalex.org/W2060612942","https://openalex.org/W2066102721","https://openalex.org/W2077314792","https://openalex.org/W2091212147","https://openalex.org/W2091881833","https://openalex.org/W2108485420","https://openalex.org/W2122768200","https://openalex.org/W2122875263","https://openalex.org/W2126812525","https://openalex.org/W2131120970","https://openalex.org/W2148100901","https://openalex.org/W2159130787","https://openalex.org/W2243909498"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W2899084033","https://openalex.org/W2292675962","https://openalex.org/W2330747830","https://openalex.org/W3127524829","https://openalex.org/W4296250578","https://openalex.org/W2121524308","https://openalex.org/W1993889649","https://openalex.org/W2387122420","https://openalex.org/W2119507945"],"abstract_inverted_index":{"CMOS":[0,79],"utilizing":[1],"high":[2,19,135,172],"mobility":[3],"Ge/III-V":[4,43,72],"channels":[5],"on":[6,76,139],"Si":[7,78,140],"substrates":[8],"is":[9,110,168],"expected":[10],"to":[11,102],"be":[12],"one":[13,48],"of":[14,32,49,71,123],"the":[15,27,33,50,57,66,77,95],"promising":[16],"devices":[17,55],"for":[18,56,93,116,171],"performance":[20,136,173],"and":[21,68,74,87,151],"low":[22],"power":[23,59],"integrated":[24],"systems":[25],"in":[26],"future":[28],"technology":[29,115],"nodes,":[30],"because":[31],"enhanced":[34],"carrier":[35],"transport":[36],"properties.":[37],"In":[38,61],"addition,":[39],"Tunneling-FETs":[40],"(TFETs)":[41],"using":[42],"materials":[44],"are":[45,91],"regarded":[46],"as":[47],"most":[51],"important":[52],"steep":[53,165],"slope":[54],"ultra-low":[58],"applications.":[60],"this":[62],"paper,":[63],"we":[64],"address":[65],"device":[67,96],"process":[69],"technologies":[70],"MOSFETs":[73],"TFETs":[75],"platform.":[80],"The":[81,98,154],"channel":[82],"formation,":[83],"source/drain":[84],"(S/D)":[85],"formation":[86,163],"gate":[88,113],"stack":[89,114],"engineering":[90],"introduced":[92],"satisfying":[94],"requirements.":[97],"plasma":[99],"post":[100],"oxidation":[101],"form":[103],"GeO":[104],"<sub":[105],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[106,158],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">x</sub>":[107],"interfacial":[108],"layers":[109],"a":[111,169],"key":[112,170],"Ge":[117],"CMOS.":[118],"Also,":[119],"direct":[120],"wafer":[121],"bonding":[122],"ultrathin":[124],"body":[125],"quantum":[126],"well":[127],"III-V-OI":[128],"channels,":[129],"combined":[130],"with":[131,141,164],"Tri-gate":[132],"structures,":[133],"realizes":[134],"III-V":[137],"nMOSFETs":[138],"threshold":[142],"voltage":[143],"tunability.":[144],"We":[145],"also":[146],"demonstrate":[147],"planar-type":[148],"Ge/strained":[149],"SOI":[150],"InGaAs":[152],"TFETs.":[153],"defect-less":[155],"p":[156],"<sup":[157],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">+</sup>":[159],"/n":[160],"source":[161],"junction":[162],"impurity":[166],"profiles":[167],"TFET":[174],"operation.":[175]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}