{"id":"https://openalex.org/W2004627800","doi":"https://doi.org/10.1109/essderc.2014.6948841","title":"Study of surface weak spots on SiC Schottky Diodes under specific operating regimes by Infrared Lock-in sensing","display_name":"Study of surface weak spots on SiC Schottky Diodes under specific operating regimes by Infrared Lock-in sensing","publication_year":2014,"publication_date":"2014-09-01","ids":{"openalex":"https://openalex.org/W2004627800","doi":"https://doi.org/10.1109/essderc.2014.6948841","mag":"2004627800"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2014.6948841","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2014.6948841","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 44th European Solid State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5054884787","display_name":"Javier Le\u00f3n","orcid":"https://orcid.org/0000-0003-1119-451X"},"institutions":[{"id":"https://openalex.org/I4210147934","display_name":"Centro Nacional de Microelectr\u00f3nica","ror":"https://ror.org/03ycqrz18","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934"]},{"id":"https://openalex.org/I4210160312","display_name":"Institut de Microelectr\u00f2nica de Barcelona","ror":"https://ror.org/04pnym676","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934","https://openalex.org/I4210160312"]}],"countries":["ES"],"is_corresponding":true,"raw_author_name":"Javier Leon","raw_affiliation_strings":["Systems Integration Department, Centre Nacional de Microelcctronica (IMB-CNM-CSIC), Barcelona, Spain","Systems Integration Department, Centre Nacional de Microelectr\u00f2nica (IMB-CNM, CSIC) Campus UAB, 08193 Cerdanyola del Vall\u00e8s, Barcelona, Spain"],"affiliations":[{"raw_affiliation_string":"Systems Integration Department, Centre Nacional de Microelcctronica (IMB-CNM-CSIC), Barcelona, Spain","institution_ids":["https://openalex.org/I4210147934","https://openalex.org/I4210160312"]},{"raw_affiliation_string":"Systems Integration Department, Centre Nacional de Microelectr\u00f2nica (IMB-CNM, CSIC) Campus UAB, 08193 Cerdanyola del Vall\u00e8s, Barcelona, Spain","institution_ids":["https://openalex.org/I4210147934","https://openalex.org/I4210160312"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033106452","display_name":"X. Perpi\u00f1\u00e0","orcid":"https://orcid.org/0000-0001-5946-5580"},"institutions":[{"id":"https://openalex.org/I4210160312","display_name":"Institut de Microelectr\u00f2nica de Barcelona","ror":"https://ror.org/04pnym676","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934","https://openalex.org/I4210160312"]},{"id":"https://openalex.org/I4210147934","display_name":"Centro Nacional de Microelectr\u00f3nica","ror":"https://ror.org/03ycqrz18","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Xavier Perpina","raw_affiliation_strings":["Systems Integration Department, Centre Nacional de Microelcctronica (IMB-CNM-CSIC), Barcelona, Spain","Systems Integration Department, Centre Nacional de Microelectr\u00f2nica (IMB-CNM, CSIC) Campus UAB, 08193 Cerdanyola del Vall\u00e8s, Barcelona, Spain"],"affiliations":[{"raw_affiliation_string":"Systems Integration Department, Centre Nacional de Microelcctronica (IMB-CNM-CSIC), Barcelona, Spain","institution_ids":["https://openalex.org/I4210147934","https://openalex.org/I4210160312"]},{"raw_affiliation_string":"Systems Integration Department, Centre Nacional de Microelectr\u00f2nica (IMB-CNM, CSIC) Campus UAB, 08193 Cerdanyola del Vall\u00e8s, Barcelona, Spain","institution_ids":["https://openalex.org/I4210147934","https://openalex.org/I4210160312"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009741194","display_name":"M. Vellveh\u0131\u0301","orcid":"https://orcid.org/0000-0002-0127-4690"},"institutions":[{"id":"https://openalex.org/I4210147934","display_name":"Centro Nacional de Microelectr\u00f3nica","ror":"https://ror.org/03ycqrz18","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934"]},{"id":"https://openalex.org/I4210160312","display_name":"Institut de Microelectr\u00f2nica de Barcelona","ror":"https://ror.org/04pnym676","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934","https://openalex.org/I4210160312"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Miquel Vellvehi","raw_affiliation_strings":["Systems Integration Department, Centre Nacional de Microelcctronica (IMB-CNM-CSIC), Barcelona, Spain","Systems Integration Department, Centre Nacional de Microelectr\u00f2nica (IMB-CNM, CSIC) Campus UAB, 08193 Cerdanyola del Vall\u00e8s, Barcelona, Spain"],"affiliations":[{"raw_affiliation_string":"Systems Integration Department, Centre Nacional de Microelcctronica (IMB-CNM-CSIC), Barcelona, Spain","institution_ids":["https://openalex.org/I4210147934","https://openalex.org/I4210160312"]},{"raw_affiliation_string":"Systems Integration Department, Centre Nacional de Microelectr\u00f2nica (IMB-CNM, CSIC) Campus UAB, 08193 Cerdanyola del Vall\u00e8s, Barcelona, Spain","institution_ids":["https://openalex.org/I4210147934","https://openalex.org/I4210160312"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035526543","display_name":"X. Jord\u00e0","orcid":"https://orcid.org/0000-0003-1967-610X"},"institutions":[{"id":"https://openalex.org/I4210147934","display_name":"Centro Nacional de Microelectr\u00f3nica","ror":"https://ror.org/03ycqrz18","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934"]},{"id":"https://openalex.org/I4210160312","display_name":"Institut de Microelectr\u00f2nica de Barcelona","ror":"https://ror.org/04pnym676","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934","https://openalex.org/I4210160312"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Xavier Jorda","raw_affiliation_strings":["Systems Integration Department, Centre Nacional de Microelcctronica (IMB-CNM-CSIC), Barcelona, Spain","Systems Integration Department, Centre Nacional de Microelectr\u00f2nica (IMB-CNM, CSIC) Campus UAB, 08193 Cerdanyola del Vall\u00e8s, Barcelona, Spain"],"affiliations":[{"raw_affiliation_string":"Systems Integration Department, Centre Nacional de Microelcctronica (IMB-CNM-CSIC), Barcelona, Spain","institution_ids":["https://openalex.org/I4210147934","https://openalex.org/I4210160312"]},{"raw_affiliation_string":"Systems Integration Department, Centre Nacional de Microelectr\u00f2nica (IMB-CNM, CSIC) Campus UAB, 08193 Cerdanyola del Vall\u00e8s, Barcelona, Spain","institution_ids":["https://openalex.org/I4210147934","https://openalex.org/I4210160312"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5012359906","display_name":"Philippe Godignon","orcid":"https://orcid.org/0000-0002-9273-9819"},"institutions":[{"id":"https://openalex.org/I4210160312","display_name":"Institut de Microelectr\u00f2nica de Barcelona","ror":"https://ror.org/04pnym676","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934","https://openalex.org/I4210160312"]},{"id":"https://openalex.org/I4210147934","display_name":"Centro Nacional de Microelectr\u00f3nica","ror":"https://ror.org/03ycqrz18","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Philippe Godignon","raw_affiliation_strings":["Systems Integration Department, Centre Nacional de Microelcctronica (IMB-CNM-CSIC), Barcelona, Spain","Systems Integration Department, Centre Nacional de Microelectr\u00f2nica (IMB-CNM, CSIC) Campus UAB, 08193 Cerdanyola del Vall\u00e8s, Barcelona, Spain"],"affiliations":[{"raw_affiliation_string":"Systems Integration Department, Centre Nacional de Microelcctronica (IMB-CNM-CSIC), Barcelona, Spain","institution_ids":["https://openalex.org/I4210147934","https://openalex.org/I4210160312"]},{"raw_affiliation_string":"Systems Integration Department, Centre Nacional de Microelectr\u00f2nica (IMB-CNM, CSIC) Campus UAB, 08193 Cerdanyola del Vall\u00e8s, Barcelona, Spain","institution_ids":["https://openalex.org/I4210147934","https://openalex.org/I4210160312"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5054884787"],"corresponding_institution_ids":["https://openalex.org/I4210147934","https://openalex.org/I4210160312"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.06711391,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"385","last_page":"388"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7675909996032715},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.7609429359436035},{"id":"https://openalex.org/keywords/thermography","display_name":"Thermography","score":0.6710060834884644},{"id":"https://openalex.org/keywords/infrared","display_name":"Infrared","score":0.6661185026168823},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6311956644058228},{"id":"https://openalex.org/keywords/schottky-diode","display_name":"Schottky diode","score":0.6176362633705139},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.6146330237388611},{"id":"https://openalex.org/keywords/schottky-barrier","display_name":"Schottky barrier","score":0.5380375385284424},{"id":"https://openalex.org/keywords/spots","display_name":"Spots","score":0.5365258455276489},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.4829351603984833},{"id":"https://openalex.org/keywords/enhanced-data-rates-for-gsm-evolution","display_name":"Enhanced Data Rates for GSM Evolution","score":0.4384315609931946},{"id":"https://openalex.org/keywords/temperature-cycling","display_name":"Temperature cycling","score":0.41965213418006897},{"id":"https://openalex.org/keywords/thermal","display_name":"Thermal","score":0.388231098651886},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.28073498606681824},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.26256680488586426},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.07667523622512817}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7675909996032715},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.7609429359436035},{"id":"https://openalex.org/C2779222261","wikidata":"https://www.wikidata.org/wiki/Q624587","display_name":"Thermography","level":3,"score":0.6710060834884644},{"id":"https://openalex.org/C158355884","wikidata":"https://www.wikidata.org/wiki/Q11388","display_name":"Infrared","level":2,"score":0.6661185026168823},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6311956644058228},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.6176362633705139},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.6146330237388611},{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.5380375385284424},{"id":"https://openalex.org/C2781255879","wikidata":"https://www.wikidata.org/wiki/Q7580087","display_name":"Spots","level":2,"score":0.5365258455276489},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4829351603984833},{"id":"https://openalex.org/C162307627","wikidata":"https://www.wikidata.org/wiki/Q204833","display_name":"Enhanced Data Rates for GSM Evolution","level":2,"score":0.4384315609931946},{"id":"https://openalex.org/C177564732","wikidata":"https://www.wikidata.org/wiki/Q7698333","display_name":"Temperature cycling","level":3,"score":0.41965213418006897},{"id":"https://openalex.org/C204530211","wikidata":"https://www.wikidata.org/wiki/Q752823","display_name":"Thermal","level":2,"score":0.388231098651886},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.28073498606681824},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.26256680488586426},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.07667523622512817},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.0},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc.2014.6948841","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2014.6948841","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 44th European Solid State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.5299999713897705}],"awards":[],"funders":[{"id":"https://openalex.org/F4320320300","display_name":"European Commission","ror":"https://ror.org/00k4n6c32"},{"id":"https://openalex.org/F4320321837","display_name":"Ministerio de Econom\u00eda y Competitividad","ror":"https://ror.org/034900433"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W1979063260","https://openalex.org/W1984949885","https://openalex.org/W2002729176","https://openalex.org/W2025990136","https://openalex.org/W2038640238","https://openalex.org/W2041236102","https://openalex.org/W2063407695","https://openalex.org/W2077288686","https://openalex.org/W2091349626","https://openalex.org/W2094552237","https://openalex.org/W2109894155","https://openalex.org/W2124113535","https://openalex.org/W2134660036","https://openalex.org/W2134921159","https://openalex.org/W2161976724","https://openalex.org/W2470163211","https://openalex.org/W4243729171","https://openalex.org/W4245671988"],"related_works":["https://openalex.org/W2147656057","https://openalex.org/W1540585561","https://openalex.org/W1981646027","https://openalex.org/W2917180890","https://openalex.org/W2614156624","https://openalex.org/W2911343812","https://openalex.org/W2064836534","https://openalex.org/W2124971553","https://openalex.org/W1621683293","https://openalex.org/W2610840581"],"abstract_inverted_index":{"Several":[0],"Silicon":[1],"Carbide":[2],"Schottky":[3],"Barrier":[4],"Diodes":[5],"(SBDs)":[6],"were":[7],"inspected":[8],"by":[9,47],"Infrared":[10],"Lock-In":[11],"Thermography":[12],"to":[13,67,84],"study":[14],"and":[15,27,45,92],"determine":[16],"the":[17,89],"origin":[18],"of":[19,41],"structural":[20],"weak":[21,58],"spots":[22,32,59],"resulting":[23],"from":[24,63],"their":[25,42,48],"manufacturing":[26],"electro-thermal":[28],"stressing":[29],"tests.":[30],"These":[31],"are":[33],"frequency":[34],"modulated":[35],"following":[36],"three":[37],"different":[38],"approaches":[39],"representative":[40],"operating":[43],"conditions":[44],"detected":[46],"infrared":[49],"emission,":[50],"as":[51,54],"they":[52],"behave":[53],"hot":[55],"spots.":[56],"Such":[57],"could":[60],"have":[61],"originated":[62],"barrier":[64],"modification":[65],"due":[66,83],"wire-bonding":[68],"process,":[69],"non-uniform":[70],"active":[71],"area":[72],"resistance":[73],"for":[74],"bad":[75],"metallization":[76],"electrical":[77],"contact,":[78],"deep":[79],"level":[80],"traps":[81],"creation":[82],"high":[85],"energy":[86],"implantation":[87],"in":[88],"edge":[90],"termination,":[91],"internal":[93],"crack":[94],"propagation":[95],"during":[96],"thermal":[97],"cycling.":[98]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}