{"id":"https://openalex.org/W1976872120","doi":"https://doi.org/10.1109/essderc.2014.6948830","title":"Advanced TCAD for predictive FinFETs Vth mismatch using full 3D process/device simulation","display_name":"Advanced TCAD for predictive FinFETs Vth mismatch using full 3D process/device simulation","publication_year":2014,"publication_date":"2014-09-01","ids":{"openalex":"https://openalex.org/W1976872120","doi":"https://doi.org/10.1109/essderc.2014.6948830","mag":"1976872120"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2014.6948830","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2014.6948830","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 44th European Solid State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5046732300","display_name":"El Mehdi Bazizi","orcid":"https://orcid.org/0000-0002-2053-6270"},"institutions":[{"id":"https://openalex.org/I4210142027","display_name":"GlobalFoundries (Germany)","ror":"https://ror.org/045jad561","country_code":"DE","type":"company","lineage":["https://openalex.org/I35662394","https://openalex.org/I4210142027"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"E. M Bazizi","raw_affiliation_strings":["GLOBALFOUNDRIES, Dresden, Germany","GLOBALFOUNDRIES Dresden (Germany)"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Dresden, Germany","institution_ids":["https://openalex.org/I4210142027"]},{"raw_affiliation_string":"GLOBALFOUNDRIES Dresden (Germany)","institution_ids":["https://openalex.org/I4210142027"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080372556","display_name":"Alban Zaka","orcid":"https://orcid.org/0009-0006-6005-4475"},"institutions":[{"id":"https://openalex.org/I4210142027","display_name":"GlobalFoundries (Germany)","ror":"https://ror.org/045jad561","country_code":"DE","type":"company","lineage":["https://openalex.org/I35662394","https://openalex.org/I4210142027"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"A. Zaka","raw_affiliation_strings":["GLOBALFOUNDRIES, Dresden, Germany","GLOBALFOUNDRIES Dresden (Germany)"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Dresden, Germany","institution_ids":["https://openalex.org/I4210142027"]},{"raw_affiliation_string":"GLOBALFOUNDRIES Dresden (Germany)","institution_ids":["https://openalex.org/I4210142027"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101971570","display_name":"Thomas Herrmann","orcid":"https://orcid.org/0000-0001-8837-2199"},"institutions":[{"id":"https://openalex.org/I4210142027","display_name":"GlobalFoundries (Germany)","ror":"https://ror.org/045jad561","country_code":"DE","type":"company","lineage":["https://openalex.org/I35662394","https://openalex.org/I4210142027"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"T. Herrmann","raw_affiliation_strings":["GLOBALFOUNDRIES, Dresden, Germany","GLOBALFOUNDRIES Dresden (Germany)"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Dresden, Germany","institution_ids":["https://openalex.org/I4210142027"]},{"raw_affiliation_string":"GLOBALFOUNDRIES Dresden (Germany)","institution_ids":["https://openalex.org/I4210142027"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5024206043","display_name":"F. B\u00e9nistant","orcid":null},"institutions":[{"id":"https://openalex.org/I4210136567","display_name":"GlobalFoundries (Singapore)","ror":"https://ror.org/03whnfd14","country_code":"SG","type":"company","lineage":["https://openalex.org/I35662394","https://openalex.org/I4210136567"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"F. Benistant","raw_affiliation_strings":["GLOBALFOUNDRIES, Singapore"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Singapore","institution_ids":["https://openalex.org/I4210136567"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059850290","display_name":"J. H. M. Tin","orcid":null},"institutions":[{"id":"https://openalex.org/I4210136567","display_name":"GlobalFoundries (Singapore)","ror":"https://ror.org/03whnfd14","country_code":"SG","type":"company","lineage":["https://openalex.org/I35662394","https://openalex.org/I4210136567"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"J. H. M. Tin","raw_affiliation_strings":["GLOBALFOUNDRIES, Singapore"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Singapore","institution_ids":["https://openalex.org/I4210136567"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069776526","display_name":"Jasper Goh","orcid":null},"institutions":[{"id":"https://openalex.org/I4210136567","display_name":"GlobalFoundries (Singapore)","ror":"https://ror.org/03whnfd14","country_code":"SG","type":"company","lineage":["https://openalex.org/I35662394","https://openalex.org/I4210136567"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"J. P. Goh","raw_affiliation_strings":["GLOBALFOUNDRIES, Singapore"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Singapore","institution_ids":["https://openalex.org/I4210136567"]}]},{"author_position":"middle","author":{"id":null,"display_name":"L. Jiang","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"L. Jiang","raw_affiliation_strings":["GLOBALFOUNDRIES, Malta, NY, USA","GLOBALFOUNDRIES, Malta, NY, 12020 USA"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Malta, NY, USA","institution_ids":["https://openalex.org/I35662394"]},{"raw_affiliation_string":"GLOBALFOUNDRIES, Malta, NY, 12020 USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039742567","display_name":"Manoj Joshi","orcid":"https://orcid.org/0000-0002-5974-0789"},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. Joshi","raw_affiliation_strings":["GLOBALFOUNDRIES, Malta, NY, USA","GLOBALFOUNDRIES, Malta, NY, 12020 USA"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Malta, NY, USA","institution_ids":["https://openalex.org/I35662394"]},{"raw_affiliation_string":"GLOBALFOUNDRIES, Malta, NY, 12020 USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028472685","display_name":"H. van Meer","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"H. van Meer","raw_affiliation_strings":["GLOBALFOUNDRIES, Malta, NY, USA","GLOBALFOUNDRIES, Malta, NY, 12020 USA"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Malta, NY, USA","institution_ids":["https://openalex.org/I35662394"]},{"raw_affiliation_string":"GLOBALFOUNDRIES, Malta, NY, 12020 USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5053772934","display_name":"K. Korablev","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"K. Korablev","raw_affiliation_strings":["GLOBALFOUNDRIES, Malta, NY, USA","GLOBALFOUNDRIES, Malta, NY, 12020 USA"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Malta, NY, USA","institution_ids":["https://openalex.org/I35662394"]},{"raw_affiliation_string":"GLOBALFOUNDRIES, Malta, NY, 12020 USA","institution_ids":["https://openalex.org/I35662394"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":10,"corresponding_author_ids":["https://openalex.org/A5046732300"],"corresponding_institution_ids":["https://openalex.org/I4210142027"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.04832906,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"341","last_page":"344"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/technology-cad","display_name":"Technology CAD","score":0.7305657267570496},{"id":"https://openalex.org/keywords/planar","display_name":"Planar","score":0.6066998839378357},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.5987668633460999},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5793269872665405},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5250489711761475},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.500133752822876},{"id":"https://openalex.org/keywords/dopant","display_name":"Dopant","score":0.4871968626976013},{"id":"https://openalex.org/keywords/fabrication","display_name":"Fabrication","score":0.4474744498729706},{"id":"https://openalex.org/keywords/process","display_name":"Process (computing)","score":0.44732049107551575},{"id":"https://openalex.org/keywords/diffusion","display_name":"Diffusion","score":0.44702979922294617},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4346766471862793},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3798069357872009},{"id":"https://openalex.org/keywords/doping","display_name":"Doping","score":0.36508941650390625},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.2365816831588745},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.1952396035194397},{"id":"https://openalex.org/keywords/cad","display_name":"CAD","score":0.15512996912002563},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1269378960132599},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.09392505884170532}],"concepts":[{"id":"https://openalex.org/C34929307","wikidata":"https://www.wikidata.org/wiki/Q845636","display_name":"Technology CAD","level":3,"score":0.7305657267570496},{"id":"https://openalex.org/C134786449","wikidata":"https://www.wikidata.org/wiki/Q3391255","display_name":"Planar","level":2,"score":0.6066998839378357},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.5987668633460999},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5793269872665405},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5250489711761475},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.500133752822876},{"id":"https://openalex.org/C191952053","wikidata":"https://www.wikidata.org/wiki/Q15119237","display_name":"Dopant","level":3,"score":0.4871968626976013},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.4474744498729706},{"id":"https://openalex.org/C98045186","wikidata":"https://www.wikidata.org/wiki/Q205663","display_name":"Process (computing)","level":2,"score":0.44732049107551575},{"id":"https://openalex.org/C69357855","wikidata":"https://www.wikidata.org/wiki/Q163214","display_name":"Diffusion","level":2,"score":0.44702979922294617},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4346766471862793},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3798069357872009},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.36508941650390625},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2365816831588745},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.1952396035194397},{"id":"https://openalex.org/C194789388","wikidata":"https://www.wikidata.org/wiki/Q17855283","display_name":"CAD","level":2,"score":0.15512996912002563},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1269378960132599},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.09392505884170532},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C121684516","wikidata":"https://www.wikidata.org/wiki/Q7600677","display_name":"Computer graphics (images)","level":1,"score":0.0},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0},{"id":"https://openalex.org/C199639397","wikidata":"https://www.wikidata.org/wiki/Q1788588","display_name":"Engineering drawing","level":1,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc.2014.6948830","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2014.6948830","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 44th European Solid State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/9","display_name":"Industry, innovation and infrastructure","score":0.550000011920929}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1967083796","https://openalex.org/W1973361253","https://openalex.org/W1989317059","https://openalex.org/W2053187981","https://openalex.org/W2060296114","https://openalex.org/W2126967076","https://openalex.org/W2132170989","https://openalex.org/W2135818056","https://openalex.org/W2330989850","https://openalex.org/W2541857965"],"related_works":["https://openalex.org/W4392590355","https://openalex.org/W1996561502","https://openalex.org/W3151633427","https://openalex.org/W2212894501","https://openalex.org/W2043309154","https://openalex.org/W2162306814","https://openalex.org/W2999656532","https://openalex.org/W3185914787","https://openalex.org/W2922843507","https://openalex.org/W2767286817"],"abstract_inverted_index":{"Predictive":[0],"TCAD":[1,29],"tool":[2],"is":[3,34,83],"crucial":[4],"for":[5],"several":[6],"reasons":[7],"such":[8],"as":[9],"to":[10,36,41,66,85,113],"provide":[11],"pre-silicon":[12],"data,":[13],"shorten":[14],"the":[15,21,43,48,51,87,109],"technology":[16],"development":[17],"cycle":[18],"and":[19,31,40,62,80,101,107],"reduce":[20],"fabrication":[22],"cost.":[23],"In":[24,72],"this":[25,73],"paper,":[26],"advanced":[27],"3D":[28,88],"process":[30,54],"device":[32],"simulations":[33],"used":[35,68,84,112],"gain":[37],"physical":[38],"understanding":[39],"optimize":[42],"performance/variability":[44],"of":[45,78,99],"bulk-FinFETs.":[46],"For":[47],"first":[49],"time,":[50],"full":[52],"FinFET":[53],"flow":[55],"simulation":[56,89,110],"was":[57,111],"performed":[58],"using":[59],"diffusion,":[60],"activation":[61],"segregation":[63],"models":[64],"identical":[65],"those":[67],"in":[69,97],"planar":[70],"nodes.":[71],"work":[74],"a":[75],"wide":[76],"range":[77],"implantation":[79],"anneal":[81],"splits":[82],"demonstrate":[86],"accuracy.":[90],"After":[91],"achieving":[92],"good":[93],"agreement":[94],"with":[95],"experiments":[96],"terms":[98],"Vth":[100],"Ion/Ioff,":[102],"considering":[103],"lateral":[104],"dopant":[105],"diffusion":[106],"activation,":[108],"investigate":[114],"SRAM":[115],"random":[116],"doping":[117],"fluctuation":[118],"RDF.":[119]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":2},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":2}],"updated_date":"2026-04-16T08:26:57.006410","created_date":"2025-10-10T00:00:00"}