{"id":"https://openalex.org/W2063104927","doi":"https://doi.org/10.1109/essderc.2014.6948812","title":"Compact model for parametric instability under arbitrary stress waveform","display_name":"Compact model for parametric instability under arbitrary stress waveform","publication_year":2014,"publication_date":"2014-09-01","ids":{"openalex":"https://openalex.org/W2063104927","doi":"https://doi.org/10.1109/essderc.2014.6948812","mag":"2063104927"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2014.6948812","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2014.6948812","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 44th European Solid State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5010128675","display_name":"Filippo Alagi","orcid":null},"institutions":[{"id":"https://openalex.org/I131827901","display_name":"STMicroelectronics (Switzerland)","ror":"https://ror.org/00wm3b005","country_code":"CH","type":"company","lineage":["https://openalex.org/I131827901"]},{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["CH","IT"],"is_corresponding":false,"raw_author_name":"Filippo Alagi","raw_affiliation_strings":["Emanuele Vigan\u00f2, STMicroelectronics, Cornaredo, MI, Italy","STMicroelectronics, Via Tolomeo, 1\u201320010 Cornaredo (MI), Italy#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Emanuele Vigan\u00f2, STMicroelectronics, Cornaredo, MI, Italy","institution_ids":["https://openalex.org/I4210154781"]},{"raw_affiliation_string":"STMicroelectronics, Via Tolomeo, 1\u201320010 Cornaredo (MI), Italy#TAB#","institution_ids":["https://openalex.org/I131827901"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5040987353","display_name":"Mattia Rossetti","orcid":"https://orcid.org/0000-0001-9280-5970"},"institutions":[{"id":"https://openalex.org/I131827901","display_name":"STMicroelectronics (Switzerland)","ror":"https://ror.org/00wm3b005","country_code":"CH","type":"company","lineage":["https://openalex.org/I131827901"]},{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["CH","IT"],"is_corresponding":false,"raw_author_name":"Mattia Rossetti","raw_affiliation_strings":["Emanuele Vigan\u00f2, STMicroelectronics, Cornaredo, MI, Italy","STMicroelectronics, Via Tolomeo, 1\u201320010 Cornaredo (MI), Italy#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Emanuele Vigan\u00f2, STMicroelectronics, Cornaredo, MI, Italy","institution_ids":["https://openalex.org/I4210154781"]},{"raw_affiliation_string":"STMicroelectronics, Via Tolomeo, 1\u201320010 Cornaredo (MI), Italy#TAB#","institution_ids":["https://openalex.org/I131827901"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109175761","display_name":"R. Stella","orcid":null},"institutions":[{"id":"https://openalex.org/I131827901","display_name":"STMicroelectronics (Switzerland)","ror":"https://ror.org/00wm3b005","country_code":"CH","type":"company","lineage":["https://openalex.org/I131827901"]},{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["CH","IT"],"is_corresponding":false,"raw_author_name":"Roberto Stella","raw_affiliation_strings":["Emanuele Vigan\u00f2, STMicroelectronics, Cornaredo, MI, Italy","STMicroelectronics, Via Tolomeo, 1\u201320010 Cornaredo (MI), Italy#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Emanuele Vigan\u00f2, STMicroelectronics, Cornaredo, MI, Italy","institution_ids":["https://openalex.org/I4210154781"]},{"raw_affiliation_string":"STMicroelectronics, Via Tolomeo, 1\u201320010 Cornaredo (MI), Italy#TAB#","institution_ids":["https://openalex.org/I131827901"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5105836928","display_name":"Emanuele Vigan\u00f2","orcid":"https://orcid.org/0000-0003-1892-102X"},"institutions":[{"id":"https://openalex.org/I131827901","display_name":"STMicroelectronics (Switzerland)","ror":"https://ror.org/00wm3b005","country_code":"CH","type":"company","lineage":["https://openalex.org/I131827901"]},{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["CH","IT"],"is_corresponding":false,"raw_author_name":"Emanuele Vigano","raw_affiliation_strings":["STMicroelectronics, Via Tolomeo, 1, 20010 Cornaredo, MI, Italy","STMicroelectronics, Via Tolomeo, 1\u201320010 Cornaredo (MI), Italy#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Via Tolomeo, 1, 20010 Cornaredo, MI, Italy","institution_ids":["https://openalex.org/I4210154781"]},{"raw_affiliation_string":"STMicroelectronics, Via Tolomeo, 1\u201320010 Cornaredo (MI), Italy#TAB#","institution_ids":["https://openalex.org/I131827901"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5034596100","display_name":"Philippe Raynaud","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Philippe Raynaud","raw_affiliation_strings":["Mentor Graphics Deep Sub-Micron Division, Montbonnot Saint Martin, France","Mentor Graphics, Deep Sub-Micron Division, Montbonnot Saint Martin, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Mentor Graphics Deep Sub-Micron Division, Montbonnot Saint Martin, France","institution_ids":[]},{"raw_affiliation_string":"Mentor Graphics, Deep Sub-Micron Division, Montbonnot Saint Martin, France","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.4259,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.68893043,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"270","last_page":"273"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/waveform","display_name":"Waveform","score":0.9234747886657715},{"id":"https://openalex.org/keywords/parametric-statistics","display_name":"Parametric statistics","score":0.7101569771766663},{"id":"https://openalex.org/keywords/instability","display_name":"Instability","score":0.6706638336181641},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.6331799030303955},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5676382184028625},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4948713183403015},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.47246479988098145},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4554353654384613},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.45437711477279663},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2966996431350708},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.29190391302108765},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.29134005308151245},{"id":"https://openalex.org/keywords/mechanics","display_name":"Mechanics","score":0.16986799240112305},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.12083721160888672},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.11275121569633484}],"concepts":[{"id":"https://openalex.org/C197424946","wikidata":"https://www.wikidata.org/wiki/Q1165717","display_name":"Waveform","level":3,"score":0.9234747886657715},{"id":"https://openalex.org/C117251300","wikidata":"https://www.wikidata.org/wiki/Q1849855","display_name":"Parametric statistics","level":2,"score":0.7101569771766663},{"id":"https://openalex.org/C207821765","wikidata":"https://www.wikidata.org/wiki/Q405372","display_name":"Instability","level":2,"score":0.6706638336181641},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.6331799030303955},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5676382184028625},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4948713183403015},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.47246479988098145},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4554353654384613},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.45437711477279663},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2966996431350708},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.29190391302108765},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.29134005308151245},{"id":"https://openalex.org/C57879066","wikidata":"https://www.wikidata.org/wiki/Q41217","display_name":"Mechanics","level":1,"score":0.16986799240112305},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.12083721160888672},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.11275121569633484},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C105795698","wikidata":"https://www.wikidata.org/wiki/Q12483","display_name":"Statistics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc.2014.6948812","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2014.6948812","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 44th European Solid State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W2036537371","https://openalex.org/W2082142229","https://openalex.org/W2083132324","https://openalex.org/W2114859176"],"related_works":["https://openalex.org/W2944990515","https://openalex.org/W2942040471","https://openalex.org/W2088008649","https://openalex.org/W2166033074","https://openalex.org/W2036808971","https://openalex.org/W2573726612","https://openalex.org/W2028220610","https://openalex.org/W1968460025","https://openalex.org/W2571059022","https://openalex.org/W1753471395"],"abstract_inverted_index":{"A":[0],"deterministic":[1],"compact":[2],"model":[3],"of":[4,9],"instability":[5],"is":[6,42,48],"presented,":[7],"capable":[8],"simulating":[10],"reversible":[11],"parametric":[12],"drift":[13],"under":[14],"any":[15],"periodic":[16],"stress":[17],"waveform":[18],"and":[19],"suitable":[20],"for":[21,50],"the":[22],"implementation":[23],"in":[24,44],"a":[25],"commercial":[26],"simulator":[27],"(Eldo":[28],"UDRM).":[29],"The":[30],"methodology":[31],"has":[32],"been":[33],"applied":[34],"to":[35],"NBTI-induced":[36],"threshold":[37],"voltage":[38],"drift;":[39],"an":[40],"example":[41],"shown,":[43],"which":[45],"recovery":[46],"simulation":[47],"crucial":[49],"circuit":[51],"design.":[52]},"counts_by_year":[{"year":2019,"cited_by_count":1},{"year":2016,"cited_by_count":2}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}