{"id":"https://openalex.org/W2026049779","doi":"https://doi.org/10.1109/essderc.2014.6948809","title":"3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETs","display_name":"3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETs","publication_year":2014,"publication_date":"2014-09-01","ids":{"openalex":"https://openalex.org/W2026049779","doi":"https://doi.org/10.1109/essderc.2014.6948809","mag":"2026049779"},"language":"en","primary_location":{"id":"doi:10.1109/essderc.2014.6948809","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2014.6948809","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 44th European Solid State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5064073094","display_name":"Thomas Holtij","orcid":null},"institutions":[{"id":"https://openalex.org/I45155027","display_name":"Technische Hochschule Mittelhessen","ror":"https://ror.org/02qdc9985","country_code":"DE","type":"education","lineage":["https://openalex.org/I45155027"]},{"id":"https://openalex.org/I4210088955","display_name":"Institut Catal\u00e0 d'Investigaci\u00f3 Qu\u00edmica","ror":"https://ror.org/013j2zh96","country_code":"ES","type":"facility","lineage":["https://openalex.org/I4210088955","https://openalex.org/I4210132884","https://openalex.org/I4387153040"]}],"countries":["DE","ES"],"is_corresponding":true,"raw_author_name":"Thomas Holtij","raw_affiliation_strings":["Department d'Enginyeria Electronica, Avda. Pa\u00efson Catalans 26, Tarragona, Spain","Technische Hochschule Mittelhessen, Competence Centre for Nanotechnology and Photonics, Wiesenstrasse 14, Giessen 35390, Germany"],"affiliations":[{"raw_affiliation_string":"Department d'Enginyeria Electronica, Avda. Pa\u00efson Catalans 26, Tarragona, Spain","institution_ids":["https://openalex.org/I4210088955"]},{"raw_affiliation_string":"Technische Hochschule Mittelhessen, Competence Centre for Nanotechnology and Photonics, Wiesenstrasse 14, Giessen 35390, Germany","institution_ids":["https://openalex.org/I45155027"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110486124","display_name":"Michael Graef","orcid":null},"institutions":[{"id":"https://openalex.org/I4210088955","display_name":"Institut Catal\u00e0 d'Investigaci\u00f3 Qu\u00edmica","ror":"https://ror.org/013j2zh96","country_code":"ES","type":"facility","lineage":["https://openalex.org/I4210088955","https://openalex.org/I4210132884","https://openalex.org/I4387153040"]},{"id":"https://openalex.org/I45155027","display_name":"Technische Hochschule Mittelhessen","ror":"https://ror.org/02qdc9985","country_code":"DE","type":"education","lineage":["https://openalex.org/I45155027"]}],"countries":["DE","ES"],"is_corresponding":false,"raw_author_name":"Michael Graef","raw_affiliation_strings":["Department d'Enginyeria Electronica, Avda. Pa\u00efson Catalans 26, Tarragona, Spain","Technische Hochschule Mittelhessen, Competence Centre for Nanotechnology and Photonics, Wiesenstrasse 14, Giessen 35390, Germany"],"affiliations":[{"raw_affiliation_string":"Department d'Enginyeria Electronica, Avda. Pa\u00efson Catalans 26, Tarragona, Spain","institution_ids":["https://openalex.org/I4210088955"]},{"raw_affiliation_string":"Technische Hochschule Mittelhessen, Competence Centre for Nanotechnology and Photonics, Wiesenstrasse 14, Giessen 35390, Germany","institution_ids":["https://openalex.org/I45155027"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025487651","display_name":"Alexander Kloes","orcid":"https://orcid.org/0000-0002-6485-1512"},"institutions":[{"id":"https://openalex.org/I45155027","display_name":"Technische Hochschule Mittelhessen","ror":"https://ror.org/02qdc9985","country_code":"DE","type":"education","lineage":["https://openalex.org/I45155027"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Alexander Kloes","raw_affiliation_strings":["Technische Hochschule Mittelhessen, Competence Centre for Nanotechnology and Photonics, Giessen, Germany","Technische Hochschule Mittelhessen, Competence Centre for Nanotechnology and Photonics, Wiesenstrasse 14, Giessen 35390, Germany"],"affiliations":[{"raw_affiliation_string":"Technische Hochschule Mittelhessen, Competence Centre for Nanotechnology and Photonics, Giessen, Germany","institution_ids":["https://openalex.org/I45155027"]},{"raw_affiliation_string":"Technische Hochschule Mittelhessen, Competence Centre for Nanotechnology and Photonics, Wiesenstrasse 14, Giessen 35390, Germany","institution_ids":["https://openalex.org/I45155027"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5030860440","display_name":"Benjam\u0131\u0301n I\u00f1\u0131\u0301guez","orcid":"https://orcid.org/0000-0002-6504-7980"},"institutions":[{"id":"https://openalex.org/I55952717","display_name":"Universidad Rovira i Virgili","ror":"https://ror.org/00g5sqv46","country_code":"ES","type":"education","lineage":["https://openalex.org/I55952717"]},{"id":"https://openalex.org/I4210088955","display_name":"Institut Catal\u00e0 d'Investigaci\u00f3 Qu\u00edmica","ror":"https://ror.org/013j2zh96","country_code":"ES","type":"facility","lineage":["https://openalex.org/I4210088955","https://openalex.org/I4210132884","https://openalex.org/I4387153040"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Benjamin Iniguez","raw_affiliation_strings":["Department d'Enginyeria Electronica, Avda. Pa\u00efson Catalans 26, Tarragona, Spain","Universitat Rovira i Virgili, Department d'Enginyeria Electronica, Electrica i Autom\u00e0tica, Avda. Pa\u00efson Catalans 26, Campus Sescelades, Tarragona 43007, Spain"],"affiliations":[{"raw_affiliation_string":"Department d'Enginyeria Electronica, Avda. Pa\u00efson Catalans 26, Tarragona, Spain","institution_ids":["https://openalex.org/I4210088955"]},{"raw_affiliation_string":"Universitat Rovira i Virgili, Department d'Enginyeria Electronica, Electrica i Autom\u00e0tica, Avda. Pa\u00efson Catalans 26, Campus Sescelades, Tarragona 43007, Spain","institution_ids":["https://openalex.org/I55952717"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5064073094"],"corresponding_institution_ids":["https://openalex.org/I4210088955","https://openalex.org/I45155027"],"apc_list":null,"apc_paid":null,"fwci":0.2093,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.5836461,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"65 66","issue":null,"first_page":"258","last_page":"261"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nanowire","display_name":"Nanowire","score":0.7494466304779053},{"id":"https://openalex.org/keywords/subthreshold-slope","display_name":"Subthreshold slope","score":0.7245079874992371},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5989208221435547},{"id":"https://openalex.org/keywords/nanoscopic-scale","display_name":"Nanoscopic scale","score":0.5684724450111389},{"id":"https://openalex.org/keywords/poissons-equation","display_name":"Poisson's equation","score":0.5617330074310303},{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.5404624938964844},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.5393843650817871},{"id":"https://openalex.org/keywords/electrostatics","display_name":"Electrostatics","score":0.48269057273864746},{"id":"https://openalex.org/keywords/nanoelectronics","display_name":"Nanoelectronics","score":0.4435201585292816},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.44158151745796204},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4354689121246338},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.42158043384552},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.41780516505241394},{"id":"https://openalex.org/keywords/conformal-map","display_name":"Conformal map","score":0.4176502227783203},{"id":"https://openalex.org/keywords/metal-gate","display_name":"Metal gate","score":0.41740018129348755},{"id":"https://openalex.org/keywords/poisson-distribution","display_name":"Poisson distribution","score":0.41097235679626465},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3989798426628113},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.371902197599411},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3496255576610565},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.34294363856315613},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.28301483392715454},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.18002456426620483},{"id":"https://openalex.org/keywords/mathematical-analysis","display_name":"Mathematical analysis","score":0.10503655672073364},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.09362143278121948},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.09085142612457275}],"concepts":[{"id":"https://openalex.org/C74214498","wikidata":"https://www.wikidata.org/wiki/Q631739","display_name":"Nanowire","level":2,"score":0.7494466304779053},{"id":"https://openalex.org/C103566474","wikidata":"https://www.wikidata.org/wiki/Q7632226","display_name":"Subthreshold slope","level":5,"score":0.7245079874992371},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5989208221435547},{"id":"https://openalex.org/C45206210","wikidata":"https://www.wikidata.org/wiki/Q2415817","display_name":"Nanoscopic scale","level":2,"score":0.5684724450111389},{"id":"https://openalex.org/C96716743","wikidata":"https://www.wikidata.org/wiki/Q827688","display_name":"Poisson's equation","level":2,"score":0.5617330074310303},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.5404624938964844},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.5393843650817871},{"id":"https://openalex.org/C117626034","wikidata":"https://www.wikidata.org/wiki/Q26336","display_name":"Electrostatics","level":2,"score":0.48269057273864746},{"id":"https://openalex.org/C141400236","wikidata":"https://www.wikidata.org/wiki/Q1479544","display_name":"Nanoelectronics","level":2,"score":0.4435201585292816},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.44158151745796204},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4354689121246338},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.42158043384552},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.41780516505241394},{"id":"https://openalex.org/C98214594","wikidata":"https://www.wikidata.org/wiki/Q850275","display_name":"Conformal map","level":2,"score":0.4176502227783203},{"id":"https://openalex.org/C51140833","wikidata":"https://www.wikidata.org/wiki/Q6822740","display_name":"Metal gate","level":5,"score":0.41740018129348755},{"id":"https://openalex.org/C100906024","wikidata":"https://www.wikidata.org/wiki/Q205692","display_name":"Poisson distribution","level":2,"score":0.41097235679626465},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3989798426628113},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.371902197599411},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3496255576610565},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.34294363856315613},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.28301483392715454},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.18002456426620483},{"id":"https://openalex.org/C134306372","wikidata":"https://www.wikidata.org/wiki/Q7754","display_name":"Mathematical analysis","level":1,"score":0.10503655672073364},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.09362143278121948},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.09085142612457275},{"id":"https://openalex.org/C105795698","wikidata":"https://www.wikidata.org/wiki/Q12483","display_name":"Statistics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/essderc.2014.6948809","is_oa":false,"landing_page_url":"https://doi.org/10.1109/essderc.2014.6948809","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 44th European Solid State Device Research Conference (ESSDERC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1967365383","https://openalex.org/W1983012598","https://openalex.org/W2011048979","https://openalex.org/W2011503759","https://openalex.org/W2040517088","https://openalex.org/W2073356430","https://openalex.org/W2077476819","https://openalex.org/W2103235572","https://openalex.org/W2119378720","https://openalex.org/W2155184842","https://openalex.org/W2321480796"],"related_works":["https://openalex.org/W1186362247","https://openalex.org/W1995720339","https://openalex.org/W2545890115","https://openalex.org/W2483800719","https://openalex.org/W2905928227","https://openalex.org/W4235745934","https://openalex.org/W2062469423","https://openalex.org/W2122589298","https://openalex.org/W2560113260","https://openalex.org/W2103893750"],"abstract_inverted_index":{"A":[0,37],"3-D":[1],"analytical":[2],"and":[3,22,51,68,104],"physics-based":[4],"compact":[5,28],"model":[6,63,78],"for":[7,30],"extremely":[8],"scaled":[9],"junctionless":[10],"(JL)":[11],"triple-gate":[12],"nanowire":[13],"(TG-NW)":[14],"MOSFETs":[15],"is":[16,33,40,43,64],"presented.":[17],"Based":[18],"on":[19],"Poisson's":[20],"equation":[21],"the":[23,31,56,76,81,85],"conformal":[24],"mapping":[25],"technique,":[26],"a":[27],"solution":[29],"electrostatics":[32],"derived":[34],"in":[35,45],"3-D.":[36],"current":[38],"expression":[39],"presented,":[41],"which":[42,52],"continuous":[44],"all":[46],"regions":[47],"of":[48,59,71],"device":[49],"operation,":[50],"takes":[53],"into":[54],"account":[55],"specific":[57],"behavior":[58],"JL":[60,72],"transistors.":[61],"The":[62],"compared":[65],"versus":[66],"measurement":[67],"simulated":[69],"data":[70],"TG-NW":[73],"MOSFETs,":[74],"whereby":[75],"structural":[77],"parameters":[79],"equal":[80],"values":[82],"given":[83],"by":[84],"fabricated":[86],"devices.":[87],"Important":[88],"electrical":[89],"parameters,":[90],"such":[91],"as":[92],"threshold":[93],"voltage":[94],"V":[95],"<sub":[96],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[97],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">T</sub>":[98],",":[99],"drain-induced":[100],"barrier":[101],"lowering":[102],"(DIBL)":[103],"subthreshold":[105],"slope":[106],"S":[107],"are":[108],"worked":[109],"out.":[110]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2015,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}